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14 条记录 (耗时 0.024 秒)

    Resist removing composition and resist removing method using the same
    1.
    发明授权
    Resist removing composition and resist removing method using the same 失效
    使用该抗蚀剂除去组合物和抗蚀剂除去方法

    公开(公告)号：US06508887B1

    公开(公告)日：2003-01-21

    申请号：US09716469

    申请日：2000-11-21

    申请人： Dong-jin Park ,  June-ing Gil ,  Je-eung Park ,  Sang-mun Chon

    发明人： Dong-jin Park ,  June-ing Gil ,  Je-eung Park ,  Sang-mun Chon

    IPC分类号： B08B304

    CPC分类号： C11D7/10 ,  C11D3/32 ,  C11D3/3942 ,  C11D7/06 ,  C11D7/08 ,  C11D7/261 ,  C11D7/3218 ,  C11D7/3263 ,  C11D11/0047 ,  G03F7/425 ,  H01L21/31133

    摘要： A resist removing composition has an excellent capability for removing a resist, polymer, organometallic polymer and metal oxide and which does not attack underlying layers, and a resist removing method using the same. The resist removing composition includes alkoxy N-hydroxyalkyl alkanamide, at least one selected from the group consisting of alkanolamine, a polar material having a dipole moment of 3 or greater and an attack inhibitor, and hydrogen peroxide or at least one of a fluoride-based reducing agent and a hydroxide-based reducing agent.

    摘要翻译： 抗蚀剂去除组合物具有优异的去除抗蚀剂，聚合物，有机金属聚合物和金属氧化物并且不会侵蚀下面的层的能力，以及使用其的抗蚀剂去除方法。 抗蚀剂去除组合物包括烷氧基N-羟烷基烷酰胺，选自链烷醇胺，偶极矩为3以上的极性物质和防发生剂的至少一种，以及过氧化氢或氟化物系中的至少一种 还原剂和氢氧化物还原剂。

    Use of alkoxy N-hydroxyalkyl alkanamide as resist removing agent, composition for removing resist, method for preparing the same and resist removing method using the same
    3.
    发明授权
    Use of alkoxy N-hydroxyalkyl alkanamide as resist removing agent, composition for removing resist, method for preparing the same and resist removing method using the same 失效
    使用烷氧基N-羟烷基烷酰胺作为抗蚀剂除去剂，除去抗蚀剂的组合物，其制备方法和使用其的抗蚀剂除去方法

    公开(公告)号：US06398874B2

    公开(公告)日：2002-06-04

    申请号：US09884992

    申请日：2001-06-21

    申请人： Dong-jin Park ,  Jin-ho Hwang ,  June-ing Gil ,  Je-eung Park ,  Sang-mun Chon

    发明人： Dong-jin Park ,  Jin-ho Hwang ,  June-ing Gil ,  Je-eung Park ,  Sang-mun Chon

    IPC分类号： B08B304

    CPC分类号： G03F7/425

    摘要： A resist removing agent and a resist removing composition, having an excellent capability for removing a resist and polymer and which does not attack underlying layers, a method for preparing the same and a resist removing method using the same. The resist removing agent includes alkoxy N-hydroxyalkyl alkanamide. The resist removing composition includes alkoxy N-hydroxyalkyl alkanamide, and at least one compound selected from a group consisting of a polar material having a dipole moment of 3 or greater, an attack inhibitor and alkanolamine. A substrate having the resist thereon is brought into contact with the resist removing agent or resist removing composition to remove the resist.

    摘要翻译： 抗蚀剂除去剂和抗蚀剂除去组合物，具有优异的去除抗蚀剂和聚合物的能力，不会侵蚀下层，其制备方法和使用其的抗蚀剂除去方法。 抗蚀剂去除剂包括烷氧基N-羟烷基烷酰胺。 抗蚀剂除去组合物包括烷氧基N-羟基烷基烷酰胺和至少一种选自偶极矩为3或更大的极性材料，攻击抑制剂和链烷醇胺的化合物。 使其上具有抗蚀剂的基板与抗蚀剂去除剂或抗蚀剂去除组合物接触以除去抗蚀剂。

    Chemical refining method and reuse system for semiconductor device manufacturing
    4.
    发明授权
    Chemical refining method and reuse system for semiconductor device manufacturing 失效
    半导体器件制造的化学精炼方法和再利用系统

    公开(公告)号：US6137018A

    公开(公告)日：2000-10-24

    申请号：US115827

    申请日：1998-07-15

    申请人： Yong-kyun Ko ,  June-ing Gil ,  Sang-mun Chon

    发明人： Yong-kyun Ko ,  June-ing Gil ,  Sang-mun Chon

    IPC分类号： B01D15/04 ,  B01D12/00 ,  C07B63/00 ,  C07B63/02 ,  C07C29/76 ,  H01L21/304 ,  C07C29/74

    CPC分类号： C07C29/76

    摘要： A chemical refining and reuse method and apparatus efficiently remove water from a waste chemical used in a semiconductor device fabrication process. The method is superior to conventional refining methods, in that water is removed at the end of the refining process, followed only by particle removal, so that water is not reintroduced into the waste chemical during metallic impurity removal. Therefore, the refined waste chemical has a percentage of water therein which is equal to that of the chemical in an initial raw state. The method includes: a) removing ionic impurities contained in the waste chemical; b) removing metallic impurities contained in the waste chemical after removing the ionic impurities; c) removing water contained in the waste chemical after removing the metallic impurities; and d) removing particles contained in the waste chemical after removing the water.

    摘要翻译： 化学精炼和再利用方法和设备有效地从用于半导体器件制造过程的废化学品中除去水。 该方法优于常规精炼方法，因为在精炼过程结束时除去水，其后仅通过除去颗粒，使得在金属杂质去除期间水不再被引入废化学品中。 因此，精炼废弃化学品中的水的百分比等于初始原始状态下的化学物质。 该方法包括：a）除去废化学物中所含的离子杂质; b）去除离子杂质后除去废化学物中所含的金属杂质; c）除去金属杂质后，除去废物中含有的水; 以及d）去除水后除去废化学物中所含的颗粒。

    Semiconductor substrate cleaning solutions, methods of forming the same, and methods using the same
    5.
    发明授权
    Semiconductor substrate cleaning solutions, methods of forming the same, and methods using the same 失效
    半导体衬底清洁溶液，其形成方法和使用其的方法

    公开(公告)号：US5846921A

    公开(公告)日：1998-12-08

    申请号：US805210

    申请日：1997-02-27

    申请人： June-ing Gil ,  Seok-ho Yi ,  Sang-mun Chon ,  Ho-kyoon Chung

    发明人： June-ing Gil ,  Seok-ho Yi ,  Sang-mun Chon ,  Ho-kyoon Chung

    IPC分类号： H01L21/304 ,  C11D3/39 ,  C11D7/08 ,  C11D7/26 ,  C11D11/00 ,  C11D7/54 ,  B08B3/08 ,  C11D7/28

    CPC分类号： C11D7/08 ,  C11D11/0047 ,  C11D3/3947 ,  C11D7/261

    摘要： Cleaning solutions for application to semiconductor substrates comprise hydrofluoric acid, hydrogen peroxide, isopropyl alcohol, and water. Methods of cleaning semiconductor substrates comprise contacting the semiconductor substrates having contaminants contained thereon with cleaning solutions comprising hydrofluoric acid, hydrogen peroxide, isopropyl alcohol, and water; contacting the semiconductor substrates with first baths of water to remove the cleaning solutions contained on the semiconductor substrates; contacting the semiconductor substrates with second baths containing water to remove the contaminants contained on the semiconductor substrates; and rotating the semiconductor substrates to remove water remaining thereon to clean the semiconductor substrates.

    摘要翻译： 用于半导体衬底的清洁溶液包括氢氟酸，过氧化氢，异丙醇和水。 清洗半导体衬底的方法包括将其上含有污染物的半导体衬底与包含氢氟酸，过氧化氢，异丙醇和水的清洁溶液接触; 使半导体衬底与第一浴水接触，以除去包含在半导体衬底上的清洁溶液; 使半导体衬底与含有水的第二浴接触以除去包含在半导体衬底上的污染物; 并旋转半导体衬底以去除残留在其上的水以清洁半导体衬底。

    System and method for drying semiconductor substrate
    9.
    发明授权
    System and method for drying semiconductor substrate 失效
    干燥半导体衬底的系统和方法

    公开(公告)号：US06655042B2

    公开(公告)日：2003-12-02

    申请号：US10060021

    申请日：2002-01-29

    申请人： Hun-jung Yi ,  Ki-seok Lee ,  Bo-yong Lee ,  Sang-oh Park ,  Pil-kwon Jun ,  Sang-mun Chon ,  Kyung-dae Kim

    发明人： Hun-jung Yi ,  Ki-seok Lee ,  Bo-yong Lee ,  Sang-oh Park ,  Pil-kwon Jun ,  Sang-mun Chon ,  Kyung-dae Kim

    IPC分类号： F26B300

    CPC分类号： H01L21/67034

    摘要： A drying system for drying a semiconductor substrate is provided. The drying system includes: a chamber for housing a vapor distributor and a fluid bath, said fluid bath being disposed in a lower portion of the chamber and said distributor being disposed in an upper portion of the chamber for distributing vapor for drying the substrate; and a fluid flow system for supplying fluid flow into said fluid bath for cleaning and drying the substrate and for draining said fluid from the fluid bath, wherein the chamber includes a plurality of exhaust vents disposed at the upper portion for venting the vapor.

    摘要翻译： 提供了用于干燥半导体衬底的干燥系统。 所述干燥系统包括：用于容纳蒸汽分配器和流体浴的室，所述流体浴设置在所述室的下部，所述分配器设置在所述室的上部，用于分配用于干燥所述基板的蒸气; 以及流体流动系统，用于将流体流供应到所述流体浴中，以清洁和干燥所述基底并从所述流体浴排出所述流体，其中所述腔室包括设置在所述上​​部的多个排气口，用于排出蒸气。

    Methods of monitoring rinsing solutions and related systems and reagents
    10.
    发明申请
    Methods of monitoring rinsing solutions and related systems and reagents 审中-公开
    监测冲洗液及相关系统和试剂的方法

    公开(公告)号：US20050227363A1

    公开(公告)日：2005-10-13

    申请号：US10952510

    申请日：2004-09-28

    申请人： Dong-won Hwang ,  Pil-kwon Jun ,  Sung-jae Lee ,  Jae-seok Lee ,  Sang-mun Chon ,  In-hoi Doh

    发明人： Dong-won Hwang ,  Pil-kwon Jun ,  Sung-jae Lee ,  Jae-seok Lee ,  Sang-mun Chon ,  In-hoi Doh

    IPC分类号： H01L21/302 ,  G01N33/00

    CPC分类号： H01L21/02057

    摘要： Monitoring metal contamination of a rinsing solution may include providing a sample of the rinsing solution, and mixing the sample of the rinsing solution with a monitoring reagent to provide a monitoring mixture. A property of the monitoring mixture that is dependent on a concentration of a metal in the rinsing solution may then be measured. More particularly, the property of the monitoring mixture may be an absorbency of the monitoring mixture with respect to electromagnetic radiation transmitted through the monitoring mixture. Related systems and reagents are also discussed.

    摘要翻译： 监测冲洗溶液的金属污染可以包括提供冲洗溶液的样品，并将漂洗溶液的样品与监测试剂混合以提供监测混合物。 然后可以测量依赖于冲洗溶液中的金属浓度的监测混合物的性质。 更具体地，监测混合物的性质可以是监测混合物相对于透过监测混合物的电磁辐射的吸收性。 还讨论了相关系统和试剂。