公开(公告)号：US07294583B1

公开(公告)日：2007-11-13

申请号：US11021558

申请日：2004-12-23

申请人： Ron Rulkens ,  George D. Papasouliotis ,  Dennis M. Hausmann ,  Raihan M. Tarafdar ,  Bunsen Nie ,  Adrianne K. Tipton ,  Jeff Tobin

发明人： Ron Rulkens ,  George D. Papasouliotis ,  Dennis M. Hausmann ,  Raihan M. Tarafdar ,  Bunsen Nie ,  Adrianne K. Tipton ,  Jeff Tobin

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3141 ,  C23C16/401 ,  H01L21/02129 ,  H01L21/02145 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/31612

摘要： A method for depositing conformal dielectric films uses alkoxy silanol or silanediol precursors and oxidizing and/or hydrolyzing agents. The method produces a material with liquid-like flow properties capable of achieving improved high aspect ratio gap fill more efficiently than previous methods using alkoxysilanes since fewer oxidation reactions are required. In addition, the dielectric can be formed with or without a metal-containing catalyst/nucleation layer, so that metal content in the dielectric film can be avoided, if desired. Seams and voids are therefore avoided in gaps filled more efficiently with higher quality dielectric. In addition, the films as dense as deposited, reducing or eliminating the need for post-deposition processing (e.g., annealing).

摘要翻译： 沉积保形介电膜的方法使用烷氧基硅烷醇或硅烷二醇前体和氧化和/或水解试剂。 该方法产生具有液体流动特性的材料，其能够比使用烷氧基硅烷的先前方法更有效地实现改进的高纵横比间隙填充，因为需要更少的氧化反应。 此外，如果需要，可以在含或不含金属的催化剂/成核层的情况下形成电介质，从而可以避免电介质膜中的金属含量。 因此，在更高质量的电介质中更有效地填充的间隙中避免接缝和空隙。 此外，这些薄膜像沉积一样密实，减少或消除了对沉积后处理（例如退火）的需要。

公开(公告)号：US07271112B1

公开(公告)日：2007-09-18

申请号：US11026284

申请日：2004-12-30

申请人： George D. Papasouliotis ,  Raihan M. Tarafdar ,  Adrianne K. Tipton ,  Ron Rulkens ,  Dennis M. Hausmann ,  Jeff Tobin

发明人： George D. Papasouliotis ,  Raihan M. Tarafdar ,  Adrianne K. Tipton ,  Ron Rulkens ,  Dennis M. Hausmann ,  Jeff Tobin

IPC分类号： H01L21/31

CPC分类号： H01L21/3141 ,  C23C16/045 ,  C23C16/45525 ,  C23C16/45529 ,  H01L21/02145 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/0228 ,  H01L21/31612

摘要： Methods of forming conformal films with increased density are described. The methods may be used to improve gap fill in semiconductor device manufacturing by eliminating seams and voids. The methods involve operating at high reactant partial pressure. Additionally, film properties may be further enhanced by optimizing the temperature of the substrate during exposure to the metal-containing and/or silicon-containing precursor gases commonly used in conformal film deposition techniques such as ALD and PDL.

摘要翻译： 描述了形成密度增加的保形膜的方法。 该方法可用于通过消除接缝和空隙来改善半导体器件制造中的间隙填充。 该方法涉及在高反应物分压下操作。 此外，通过在通常用于保形膜沉积技术（例如ALD和PDL）中的含金属和/或含硅前体气体曝光期间优化衬底的温度，可以进一步提高膜性能。

公开(公告)号：US07223707B1

公开(公告)日：2007-05-29

申请号：US11027480

申请日：2004-12-30

申请人： George D. Papasouliotis ,  Jeff Tobin ,  Ron Rulkens ,  Dennis M. Hausmann ,  Adrianne K. Tipton ,  Raihan M. Tarafdar ,  Bunsen Nie

发明人： George D. Papasouliotis ,  Jeff Tobin ,  Ron Rulkens ,  Dennis M. Hausmann ,  Adrianne K. Tipton ,  Raihan M. Tarafdar ,  Bunsen Nie

IPC分类号： H01L21/00

CPC分类号： C23C16/45534 ,  C23C16/402 ,  C23C16/45529 ,  H01L21/02145 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/0228 ,  H01L21/3142 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/76837

摘要： A method for using ALD and RVD techniques in semiconductor manufacturing to produce a smooth nanolaminate dielectric film, in particular for filling structures with doped or undoped silica glass, uses dynamic process conditions. A dynamic process using variable substrate (e.g., wafer) temperature, reactor pressure and/or reactant partial pressure, as opposed to static process conditions through various cycles, can be used to minimize film roughness and improve gap fill performance and film properties via the elimination or reduction of seam occurrence. Overall film roughness can be reduced by operating the initial growth cycle under conditions which optimize film smoothness, and then switching to conditions that will enhance conformality, gap fill and film properties for the subsequent process cycles. Film deposition characteristics can be changed by modulating one or more of a number of process parameters including wafer temperature, reactor pressure, reactant partial pressure and combinations of these.

摘要翻译： 在半导体制造中使用ALD和RVD技术来生产光滑的纳米层状电介质膜的方法，特别是用掺杂或未掺杂的石英玻璃填充结构的方法，使用动态工艺条件。 可以使用与通过各种循环的静态工艺条件相反的使用可变衬底（例如，晶片）温度，反应器压力和/或反应物分压的动态过程来最小化膜粗糙度，并通过消除来改善间隙填充性能和膜性质 或减少接缝发生。 通过在优化膜平滑性的条件下操作初始生长周期，然后转换到将增强后续工艺循环的共形性，间隙填充和膜性能的条件，可以降低总膜的粗糙度。 可以通过调制包括晶片温度，反应器压力，反应物分压以及它们的组合在内的多个工艺参数中的一个或多个来改变膜沉积特性。

公开(公告)号：US07297608B1

公开(公告)日：2007-11-20

申请号：US10874696

申请日：2004-06-22

申请人： George D. Papasouliotis ,  Raihan M. Tarafdar ,  Ron Rulkens ,  Dennis M. Hausmann ,  Jeff Tobin ,  Adrianne K. Tipton ,  Bunsen Nie

发明人： George D. Papasouliotis ,  Raihan M. Tarafdar ,  Ron Rulkens ,  Dennis M. Hausmann ,  Jeff Tobin ,  Adrianne K. Tipton ,  Bunsen Nie

IPC分类号： H01L21/76

CPC分类号： H01L21/76224 ,  H01L21/3141

摘要： A method employing atomic layer deposition rapid vapor deposition (RVD) conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is then annealed using a high density plasma (HDP) at a temperature under 500° C. in an oxidizing environment. The method includes the following three principal operations: exposing a substrate surface to an aluminum-containing precursor gas to form a substantially saturated layer of aluminum-containing precursor on the substrate surface; exposing the substrate surface to a silicon-containing precursor gas to form the dielectric film; and annealing the dielectric film in a low temperature oxygen-containing high density plasma. The resulting film has improved mechanical properties, including minimized seams, improved WERR, and low intrinsic stress, comparable to a high temperature annealing process (˜800° C.), but without exceeding the thermal budget limitations of advanced devices.

摘要翻译： 使用原子层沉积快速气相沉积（RVD）的方法将介电材料共形沉积在基底表面的小特征上。 然后使用高密度等离子体（HDP）在氧化环境中在500℃以下的温度下对所得介电膜进行退火。 该方法包括以下三个主要操作：将衬底表面暴露于含铝前体气体，以在衬底表面上形成基本饱和的含铝前体层; 将衬底表面暴露于含硅前体气体以形成电介质膜; 并在低温含氧高密度等离子体中退火电介质膜。 所得膜具有改善的机械性能，包括最小化的接缝，改进的WERR和低的本征应力，与高温退火工艺（〜800℃）相当，但不超过先进设备的热预算限制。

公开(公告)号：US07202185B1

公开(公告)日：2007-04-10

申请号：US10875158

申请日：2004-06-22

申请人： Dennis M. Hausmann ,  Jeff Tobin ,  George D. Papasouliotis ,  Ron Rulkens ,  Raihan M. Tarafdar ,  Adrianne K. Tipton ,  Bunsen Nie

发明人： Dennis M. Hausmann ,  Jeff Tobin ,  George D. Papasouliotis ,  Ron Rulkens ,  Raihan M. Tarafdar ,  Adrianne K. Tipton ,  Bunsen Nie

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3141 ,  C23C16/0272 ,  C23C16/402 ,  C23C16/45525 ,  C23C16/45534 ,  H01L21/02145 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/31612

摘要： An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant and a high degree of surface smoothness. The method includes the following three principal operations: exposing a substrate surface to an aluminum-containing precursor gas to form a saturated layer of aluminum-containing precursor on the substrate surface; exposing the substrate surface to an oxygen-containing gas to oxidize the layer of aluminum-containing precursor; and exposing the substrate surface to a silicon-containing precursor gas to form the dielectric film. Generally an inert gas purge is employed between the introduction of reactant gases to remove byproducts and unused reactants. These operations can be repeated to deposit multiple layers of dielectric material until a desired dielectric thickness is achieved.

摘要翻译： 使用原子层沉积（ALD）和快速气相沉积（RVD）技术的方法在基片表面的小特征上共同沉积介电材料。 所得的电介质膜具有低的介电常数和高的表面平滑度。 该方法包括以下三个主要操作：将衬底表面暴露于含铝前体气体，以在衬底表面上形成饱和的含铝前体的层; 将衬底表面暴露于含氧气体以氧化含铝前体层; 并将基板表面暴露于含硅前体气体以形成电介质膜。 通常，在引入反应气体以除去副产物和未使用的反应物之间采用惰性气体吹扫。 可以重复这些操作以沉积多层介电材料，直到达到所需的介电厚度。

公开(公告)号：US07790633B1

公开(公告)日：2010-09-07

申请号：US11519445

申请日：2006-09-11

申请人： Raihan M. Tarafdar ,  George D. Papasouliotis ,  Ron Rulkens ,  Dennis M. Hausmann ,  Jeff Tobin ,  Adrianne K. Tipton ,  Bunsen Nie

发明人： Raihan M. Tarafdar ,  George D. Papasouliotis ,  Ron Rulkens ,  Dennis M. Hausmann ,  Jeff Tobin ,  Adrianne K. Tipton ,  Bunsen Nie

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02351 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/02345 ,  H01L21/02348 ,  H01L21/02354 ,  H01L21/76224

摘要： A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The dielectric layer is then annealed, ideally at a moderate temperature, to remove water and thereby fully densify the film. The deposition and anneal processes are then repeated until a desired dielectric film thickness is achieved.

摘要翻译： 通过顺序沉积/退火技术在基板表面上形成二氧化硅基介电层。 沉积层厚度不足以防止退火处理剂基本上完全渗透到层中并将水从层中迁移出来。 然后将电介质层退火，理想地在中等温度下去除水，从而使膜完全致密化。 然后重复沉积和退火处理，直到达到所需的电介质膜厚度。

公开(公告)号：US07148155B1

公开(公告)日：2006-12-12

申请号：US10975028

申请日：2004-10-26

申请人： Raihan M. Tarafdar ,  George D. Papasouliotis ,  Ron Rulkens ,  Dennis M. Hausmann ,  Jeff Tobin ,  Adrianne K. Tipton ,  Bunsen Nie

发明人： Raihan M. Tarafdar ,  George D. Papasouliotis ,  Ron Rulkens ,  Dennis M. Hausmann ,  Jeff Tobin ,  Adrianne K. Tipton ,  Bunsen Nie

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31612 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/76224

摘要： A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The dielectric layer is then annealed, ideally at a moderate temperature, to remove water and thereby fully densify the film. The deposition and anneal processes are then repeated until a desired dielectric film thickness is achieved.

摘要翻译： 通过顺序沉积/退火技术在基板表面上形成二氧化硅基介电层。 沉积层厚度不足以防止退火处理剂基本上完全渗透到层中并将水从层中迁移出来。 然后将电介质层退火，理想地在中等温度下去除水，从而使膜完全致密化。 然后重复沉积和退火处理，直到达到所需的电介质膜厚度。

公开(公告)号：US07097878B1

公开(公告)日：2006-08-29

申请号：US10874814

申请日：2004-06-22

申请人： Ron Rulkens ,  Dennis M. Hausmann ,  Raihan M. Tarafdar ,  George D. Papasouliotis ,  Bunsen Nie ,  Adrianne K. Tipton ,  Jeff Tobin

发明人： Ron Rulkens ,  Dennis M. Hausmann ,  Raihan M. Tarafdar ,  George D. Papasouliotis ,  Bunsen Nie ,  Adrianne K. Tipton ,  Jeff Tobin

IPC分类号： C23C16/40 ,  C23C16/56

CPC分类号： C23C16/045 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45534 ,  C23C16/45553

摘要： A method employing rapid vapor deposition (RVD) deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is thicker, faster growing, shows better gap fill performance and has improved film properties compared to films resulting from silicon precursors with identical alkoxy substituents on silicon. The method includes the following two principal operations: exposing a substrate surface to a metal-containing precursor gas to form a substantially saturated layer of metal-containing precursor on the substrate surface; and exposing the substrate surface to a mixed alkoxy-substituted silicon-containing precursor gas to form the dielectric film.

摘要翻译： 使用快速蒸镀（RVD）的方法将介电材料沉积在衬底表面的小特征上。 所得到的介电膜较厚，生长速度更快，显示出更好的间隙填充性能，并且与硅上具有相同烷氧基取代基的硅前体产生的膜相比具有改进的膜性能。 该方法包括以下两个主要操作：将衬底表面暴露于含金属前体气体，以在衬底表面上形成基本饱和的含金属前体层; 并将衬底表面暴露于混合的烷氧基取代的含硅前体气体以形成电介质膜。

公开(公告)号：US07129189B1

公开(公告)日：2006-10-31

申请号：US10874808

申请日：2004-06-22

申请人： Dennis M. Hausmann ,  Adrianne K. Tipton ,  Bunsen Nie ,  George D. Papasouliotis ,  Ron Rulkens ,  Raihan M. Tarafdar

发明人： Dennis M. Hausmann ,  Adrianne K. Tipton ,  Bunsen Nie ,  George D. Papasouliotis ,  Ron Rulkens ,  Raihan M. Tarafdar

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/45553 ,  C23C16/40 ,  C23C16/45531 ,  C23C16/45534 ,  H01L21/314 ,  H01L21/3142 ,  H01L21/31608

摘要： An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film applies a phosphate-doped silicate film using atomic layer deposition (ALD) and rapid surface catalyzed vapor deposition (RVD). The method includes the following four principal operations: exposing a substrate surface to an aluminum-containing precursor gas to form a substantially saturated layer of aluminum-containing precursor on the substrate surface; exposing the substrate surface to a phosphate-containing precursor gas to form aluminum phosphate on the substrate surface; exposing the substrate surface to an aluminum-containing precursor gas to form a second substantially saturated layer of aluminum-containing precursor on the substrate surface; and exposing the substrate surface to a silicon-containing precursor gas to form the dielectric film. Generally an inert gas purge is employed between the introduction of reactant gases to remove byproducts and unused reactants. These operations can be repeated to deposit multiple layers of dielectric material until a desired dielectric thickness is achieved.

摘要翻译： 使用原子层沉积（ALD）和快速气相沉积（RVD）技术的方法在基片表面的小特征上共同沉积介电材料。 所得到的电介质膜使用原子层沉积（ALD）和快速表面催化气相沉积（RVD）来施加磷酸盐掺杂的硅酸盐膜。 该方法包括以下四个主要操作：将衬底表面暴露于含铝前体气体，以在衬底表面上形成基本上饱和的含铝前体层; 将衬底表面暴露于含磷酸盐的前体气体以在衬底表面上形成磷酸铝; 将衬底表面暴露于含铝前体气体，以在衬底表面上形成第二基本饱和的含铝前体层; 并将衬底表面暴露于含硅前体气体以形成电介质膜。 通常，在引入反应气体以除去副产物和未使用的反应物之间采用惰性气体吹扫。 可以重复这些操作以沉积多层介电材料，直到达到所需的介电厚度。

公开(公告)号：US07482247B1

公开(公告)日：2009-01-27

申请号：US11524502

申请日：2006-09-19

申请人： George D. Papasouliotis ,  Raihan M. Tarafdar ,  Ron Rulkins ,  Dennis M. Hausmann ,  Jeff Tobin ,  Adrianne K. Tipton ,  Bunsen Nie ,  Wai-Fan Yau ,  Brian G. Lu ,  Timothy M. Archer ,  Sasson Roger Somekh

发明人： George D. Papasouliotis ,  Raihan M. Tarafdar ,  Ron Rulkins ,  Dennis M. Hausmann ,  Jeff Tobin ,  Adrianne K. Tipton ,  Bunsen Nie ,  Wai-Fan Yau ,  Brian G. Lu ,  Timothy M. Archer ,  Sasson Roger Somekh

IPC分类号： H01L21/311

CPC分类号： H01L21/3141 ,  C23C16/045 ,  C23C16/44 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31608 ,  H01L21/76224 ,  H01L21/76837

摘要： Conformal nanolaminate dielectric deposition and etch back processes that can fill high aspect ratio (typically at least 5:1, for example 6:1), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps with significantly reduced incidence of voids or weak spots involve the use of any suitable confirmal dielectric deposition technique and a dry etch back. The etch back part of the process involves a single step or an integrated multi-step (for example, two-step) procedure including an anisotropic dry etch followed by an isotropic dry etch. The all dry deposition and etch back process in a single tool increases throughput and reduces handling of wafers resulting in more efficient and higher quality nanolaminate dielectric gap fill operations.

摘要翻译： 可以满足高纵横比（通常至少5:1，例如6:1），窄宽度（通常为0.13微米，例如0.1微米或更小）的间隙的保形纳米酸盐电介质沉积和回蚀工艺，显着降低 空隙或弱点涉及使用任何合适的确认电介质沉积技术和干法回蚀。 该方法的回蚀部分涉及包括各向异性干法蚀刻以及各向同性干蚀刻的单步骤或集成多步骤（例如两步）程序。 在单个工具中的全部干沉积和回蚀工艺增加了生产量并减少了晶片的处理，从而产生了更有效和更高质量的纳米层间介质间隙填充操作。