公开(公告)号：US5513834A

公开(公告)日：1996-05-07

申请号：US339453

申请日：1994-11-14

申请人： Gerald B. Feldewerth ,  Alan B. I. Bollong ,  David C. Bunnell

发明人： Gerald B. Feldewerth ,  Alan B. I. Bollong ,  David C. Bunnell

IPC分类号： B01D3/00 ,  C01B19/02 ,  C22B9/02 ,  C22C7/00 ,  C22C18/00 ,  C22C20/00 ,  C22C28/00 ,  C30B13/00 ,  C21D11/00

CPC分类号： C01B19/02 ,  C01P2002/89 ,  C01P2006/80

摘要： Described is in situ refining high purity elements in Groups IIA and VIB of the Periodic Table in a hermetically sealed apparatus by distilling, condensing and zone refining material within the apparatus.

摘要翻译： 描述的是通过在设备内蒸馏，冷凝和分离精制材料，在气密密封的设备中原位精炼周期表IIA和VIB族中的高纯度元素。

公开(公告)号：US6030514A

公开(公告)日：2000-02-29

申请号：US850707

申请日：1997-05-02

申请人： John A. Dunlop ,  Michael Goldstein ,  Gerald B. Feldewerth ,  Cari Shim ,  Stephan Schittny

发明人： John A. Dunlop ,  Michael Goldstein ,  Gerald B. Feldewerth ,  Cari Shim ,  Stephan Schittny

IPC分类号： C23C14/34 ,  B65B31/00

CPC分类号： C23C14/3414

摘要： A target for sputtering is subjected to a surface treatment process and special packaging after target manufacture for improved sputtering performance and process and yield by reducing particulates. The sputtering target is first surface treated to remove oxides, impurities and contaminants. The surface treated target is then covered with a metallic enclosure and, optionally, a passivating barrier layer. The metallic enclosure protects the target surface from direct contact with subsequently employed packaging material such as plastic bags, thereby eliminating sources of organic materials during sputtering operations. The surface treatment of the target removes deformed material, smearing, twins, or burrs and the like from the target surface, reducing "burn-in" or sputter conditioning time prior to production sputtering of thin films.

摘要翻译： 在目标制造之后对溅射靶进行表面处理和特殊包装，以改善溅射性能和工艺，并通过减少微粒产生收率。 首先对溅射靶进行表面处理以除去氧化物，杂质和污染物。 然后用金属外壳和任选的钝化阻挡层覆盖表面处理的靶。 金属外壳保护目标表面免受与随后使用的包装材料如塑料袋的直接接触，从而在溅射操作期间消除有机材料的来源。 靶的表面处理从目标表面去除变形的材料，涂抹，双胞胎或毛刺等，在薄膜的生产溅射之前减少“老化”或溅射调理时间。

公开(公告)号：US07064446B2

公开(公告)日：2006-06-20

申请号：US10812464

申请日：2004-03-29

申请人： John P. Barnak ,  Gerald B. Feldewerth ,  Ming Fang ,  Kevin J. Lee ,  Tzuen-Luh Huang ,  Harry Y. Liang ,  Seshu V. Sattiraju ,  Margherita Chang ,  Andrew W. H. Yeoh

发明人： John P. Barnak ,  Gerald B. Feldewerth ,  Ming Fang ,  Kevin J. Lee ,  Tzuen-Luh Huang ,  Harry Y. Liang ,  Seshu V. Sattiraju ,  Margherita Chang ,  Andrew W. H. Yeoh

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05572 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2924/00

摘要： Apparatus and methods of fabricating an under bump metallization structure including an adhesion layer abutting a conductive pad, a molybdenum-containing barrier layer abutting the adhesion layer, a wetting layer abutting the molybdenum-containing barrier layer, and high tin content solder material abutting the wetting layer. The wetting layer may be substantially subsumed in the high content solder forming an intermetallic compound layer. The molybdenum-containing barrier layer prevents the movement of tin in the high tin content solder material from migrating to dielectric layers abutting the conductive pad and potentially causing delamination and/or attacking any underlying structures, particularly copper structures, which may be present.

摘要翻译： 制造凸起下金属化结构的装置和方法包括邻接导电垫的粘附层，邻接粘合层的含钼阻挡层，邻接含钼阻挡层的润湿层和邻接润湿剂的高锡含量焊料 层。 润湿层可以基本上包含在形成金属间化合物层的高含量焊料中。 含钼阻挡层防止高锡含量焊料材料中的锡的移动不会迁移到邻接导电焊盘的电介质层，并可能导致分层和/或攻击可能存在的任何下面的结构，特别是铜结构。