公开(公告)号：US07064446B2

公开(公告)日：2006-06-20

申请号：US10812464

申请日：2004-03-29

申请人： John P. Barnak ,  Gerald B. Feldewerth ,  Ming Fang ,  Kevin J. Lee ,  Tzuen-Luh Huang ,  Harry Y. Liang ,  Seshu V. Sattiraju ,  Margherita Chang ,  Andrew W. H. Yeoh

发明人： John P. Barnak ,  Gerald B. Feldewerth ,  Ming Fang ,  Kevin J. Lee ,  Tzuen-Luh Huang ,  Harry Y. Liang ,  Seshu V. Sattiraju ,  Margherita Chang ,  Andrew W. H. Yeoh

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05572 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2924/00

摘要： Apparatus and methods of fabricating an under bump metallization structure including an adhesion layer abutting a conductive pad, a molybdenum-containing barrier layer abutting the adhesion layer, a wetting layer abutting the molybdenum-containing barrier layer, and high tin content solder material abutting the wetting layer. The wetting layer may be substantially subsumed in the high content solder forming an intermetallic compound layer. The molybdenum-containing barrier layer prevents the movement of tin in the high tin content solder material from migrating to dielectric layers abutting the conductive pad and potentially causing delamination and/or attacking any underlying structures, particularly copper structures, which may be present.

摘要翻译： 制造凸起下金属化结构的装置和方法包括邻接导电垫的粘附层，邻接粘合层的含钼阻挡层，邻接含钼阻挡层的润湿层和邻接润湿剂的高锡含量焊料 层。 润湿层可以基本上包含在形成金属间化合物层的高含量焊料中。 含钼阻挡层防止高锡含量焊料材料中的锡的移动不会迁移到邻接导电焊盘的电介质层，并可能导致分层和/或攻击可能存在的任何下面的结构，特别是铜结构。

公开(公告)号：US07442634B2

公开(公告)日：2008-10-28

申请号：US11019857

申请日：2004-12-21

申请人： Valery M. Dubin ,  Tzuen-Luh Huang ,  Ming Fang ,  Kevin J. Lee ,  Yuehai Liang ,  Margherita Chang

发明人： Valery M. Dubin ,  Tzuen-Luh Huang ,  Ming Fang ,  Kevin J. Lee ,  Yuehai Liang ,  Margherita Chang

IPC分类号： H01L21/44

CPC分类号： H01L21/2885 ,  C25D3/02 ,  C25D3/38 ,  C25D5/10 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01011 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2924/0496

摘要： According to one aspect of the invention, a method for forming contact formations is provided. A substrate may be placed in an electrolytic solution. The substrate may have an exposed conductive portion and the electrolytic solution may include a plurality of metallic ions and an accelerator. The accelerator may include at least one of bis-(sodium sulfopropyl)-disulfide and 3-mercapto-1-propanesulfonic acid-sodium salt. A voltage may be applied across the electrolytic solution and the conductive portion of the substrate to cause the metallic ions to be changed into metallic particles and deposited on the conductive portion. The electrolytic solution may also include a protonated organic additive. The electrolytic solution may also include an acid and a surfactant. The acid may include at least one of sulfuric acid, methane sulfonic acid, benzene sulfonic acid, and picryl sulfonic acid. The surfactant may include at least one of polyethylene glycol and polypropylene glycol.

摘要翻译： 根据本发明的一个方面，提供了形成接触层的方法。 衬底可以放置在电解溶液中。 基板可以具有暴露的导电部分，电解液可以包括多个金属离子和加速器。 促进剂可以包括双 - （磺基磺基丙基） - 二硫化物和3-巯基-1-丙磺酸钠盐中的至少一种。 可以在电解液和基板的导电部分之间施加电压，以使金属离子变成金属颗粒并沉积在导电部分上。 电解液还可以包括质子化的有机添加剂。 电解液还可以包含酸和表面活性剂。 酸可以包括硫酸，甲磺酸，苯磺酸和苦基磺酸中的至少一种。 表面活性剂可以包括聚乙二醇和聚丙二醇中的至少一种。

公开(公告)号：US20130256910A1

公开(公告)日：2013-10-03

申请号：US13994668

申请日：2011-10-28

申请人： Kevin J. Lee ,  Mark T. Bohr ,  Andrew W. Yeoh ,  Christopher M. Pelto ,  Hiten Kothari ,  Seshu V. Sattiraju ,  Hang-Shing Ma

发明人： Kevin J. Lee ,  Mark T. Bohr ,  Andrew W. Yeoh ,  Christopher M. Pelto ,  Hiten Kothari ,  Seshu V. Sattiraju ,  Hang-Shing Ma

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L23/5226 ,  H01L21/76802 ,  H01L21/76898 ,  H01L23/291 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02372 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06131 ,  H01L2224/06181 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13582 ,  H01L2224/13583 ,  H01L2224/13611 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/0105 ,  H01L2924/01015 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00 ,  H01L2224/05552

摘要： A 3D interconnect structure and method of manufacture are described in which metal redistribution layers (RDLs) are integrated with through-silicon vias (TSVs) and using a single damascene type process flow. A silicon nitride or silicon carbide passivation layer may be provided between the thinned device wafer back side and the RDLs to provide a hermetic barrier and polish stop layer during the process flow.

摘要翻译： 描述了三维互连结构和制造方法，其中金属再分配层（RDL）与硅通孔（TSV）集成并且使用单个镶嵌型工艺流程。 氮化硅或碳化硅钝化层可以设置在薄化的器件晶片背面和RDL之间，以在工艺流程期间提供密封屏障和抛光停止层。

公开(公告)号：US20130285257A1

公开(公告)日：2013-10-31

申请号：US13994666

申请日：2011-10-28

申请人： Kevin J. Lee ,  Mark T. Bohr ,  Andrew W. Yeoh ,  Christopher M. Pelto ,  Hiten Kothari ,  Seshu V. Sattiraju ,  Hang-Shing Ma

发明人： Kevin J. Lee ,  Mark T. Bohr ,  Andrew W. Yeoh ,  Christopher M. Pelto ,  Hiten Kothari ,  Seshu V. Sattiraju ,  Hang-Shing Ma

IPC分类号： H01L23/538

CPC分类号： H01L23/5384 ,  H01L21/6835 ,  H01L21/76807 ,  H01L21/76898 ,  H01L23/291 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/522 ,  H01L23/5286 ,  H01L23/5386 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/13 ,  H01L24/17 ,  H01L2221/6835 ,  H01L2224/0235 ,  H01L2224/02372 ,  H01L2224/02375 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/11002 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17106 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/186 ,  H01L2924/381 ,  H01L2924/01015 ,  H01L2924/01074 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/00 ,  H01L2224/05552

摘要： A 3D interconnect structure and method of manufacture are described in which a through-silicon vias (TSVs) and metal redistribution layers (RDLs) are formed using a dual damascene type process flow. A silicon nitride or silicon carbide passivation layer may be provided between the thinned device wafer back side and the RDLs to provide a hermetic barrier and etch stop layer during the process flow.

公开(公告)号：US09449913B2

公开(公告)日：2016-09-20

申请号：US13994668

申请日：2011-10-28

申请人： Kevin J. Lee ,  Mark T. Bohr ,  Andrew W. Yeoh ,  Christopher M. Pelto ,  Hiten Kothari ,  Seshu V. Sattiraju ,  Hang-Shing Ma

发明人： Kevin J. Lee ,  Mark T. Bohr ,  Andrew W. Yeoh ,  Christopher M. Pelto ,  Hiten Kothari ,  Seshu V. Sattiraju ,  Hang-Shing Ma

IPC分类号： H01L23/48 ,  H01L23/522 ,  H01L21/768 ,  H01L23/29 ,  H01L23/00

CPC分类号： H01L23/5226 ,  H01L21/76802 ,  H01L21/76898 ,  H01L23/291 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02372 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06131 ,  H01L2224/06181 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13582 ,  H01L2224/13583 ,  H01L2224/13611 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/0105 ,  H01L2924/01015 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00 ,  H01L2224/05552

摘要： A 3D interconnect structure and method of manufacture are described in which metal redistribution layers (RDLs) are integrated with through-silicon vias (TSVs) and using a single damascene type process flow. A silicon nitride or silicon carbide passivation layer may be provided between the thinned device wafer back side and the RDLs to provide a hermetic barrier and polish stop layer during the process flow.

摘要翻译： 描述了三维互连结构和制造方法，其中金属再分配层（RDL）与硅通孔（TSV）集成并且使用单个镶嵌型工艺流程。 氮化硅或碳化硅钝化层可以设置在薄化的器件晶片背面和RDL之间，以在工艺流程期间提供密封屏障和抛光停止层。

公开(公告)号：US09142510B2

公开(公告)日：2015-09-22

申请号：US13994666

申请日：2011-10-28

申请人： Kevin J. Lee ,  Mark T. Bohr ,  Andrew W. Yeoh ,  Christopher M. Pelto ,  Hiten Kothari ,  Seshu V. Sattiraju ,  Hang-Shing Ma

发明人： Kevin J. Lee ,  Mark T. Bohr ,  Andrew W. Yeoh ,  Christopher M. Pelto ,  Hiten Kothari ,  Seshu V. Sattiraju ,  Hang-Shing Ma

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L23/538 ,  H01L21/768 ,  H01L23/00 ,  H01L23/522 ,  H01L21/683

CPC分类号： H01L23/5384 ,  H01L21/6835 ,  H01L21/76807 ,  H01L21/76898 ,  H01L23/291 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/522 ,  H01L23/5286 ,  H01L23/5386 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/13 ,  H01L24/17 ,  H01L2221/6835 ,  H01L2224/0235 ,  H01L2224/02372 ,  H01L2224/02375 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/11002 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17106 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/186 ,  H01L2924/381 ,  H01L2924/01015 ,  H01L2924/01074 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/00 ,  H01L2224/05552

摘要： A 3D interconnect structure and method of manufacture are described in which a through-silicon vias (TSVs) and metal redistribution layers (RDLs) are formed using a dual damascene type process flow. A silicon nitride or silicon carbide passivation layer may be provided between the thinned device wafer back side and the RDLs to provide a hermetic barrier and etch stop layer during the process flow.

摘要翻译： 描述了3D互连结构和制造方法，其中使用双镶嵌型工艺流程形成穿硅通孔（TSV）和金属再分布层（RDL）。 氮化硅或碳化硅钝化层可以设置在减薄的器件晶片背面和RDL之间，以在工艺流程期间提供气密屏障和蚀刻停止层。

公开(公告)号：US20080079166A1

公开(公告)日：2008-04-03

申请号：US11540200

申请日：2006-09-29

申请人： Kevin J. Lee ,  Subhash Joshi ,  Angelo Kandas ,  Everett Branderhorst ,  Rohit Grover ,  Tzuen-Luh Huang

发明人： Kevin J. Lee ,  Subhash Joshi ,  Angelo Kandas ,  Everett Branderhorst ,  Rohit Grover ,  Tzuen-Luh Huang

IPC分类号： H01L23/48

CPC分类号： H01L23/3192 ,  H01L23/3114 ,  H01L24/10 ,  H01L2224/0554 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/3511 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Embodiments of semiconductor devices and methods of making such devices are presented herein.

摘要翻译： 半导体器件的实施例和制造这种器件的方法在本文中给出。

公开(公告)号：US07391112B2

公开(公告)日：2008-06-24

申请号：US11142971

申请日：2005-06-01

申请人： Jianxing Li ,  Ming Fang ,  Ting Zhong ,  Fay Hua ,  Kevin J. Lee

发明人： Jianxing Li ,  Ming Fang ,  Ting Zhong ,  Fay Hua ,  Kevin J. Lee

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/81 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1316 ,  H01L2224/13164 ,  H01L2224/13609 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/01028 ,  H01L2224/13099 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A structure including a substrate, a copper bump formed over the substrate, and a barrier layer comprising an alloy of at least one of iron and nickel, formed over the copper bump, and methods to make such a structure.

摘要翻译： 包括衬底，形成在衬底上的铜凸块，以及包含在铜凸块上形成的铁和镍中的至少一种的合金的阻挡层的结构以及制造这种结构的方法。

公开(公告)号：US09489354B1

公开(公告)日：2016-11-08

申请号：US13535164

申请日：2012-06-27

申请人： Kevin J. Lee ,  Michael W. Nail ,  Homan Lee

发明人： Kevin J. Lee ,  Michael W. Nail ,  Homan Lee

IPC分类号： G06F17/22 ,  G06F17/24 ,  H04L9/32 ,  G06F17/21

CPC分类号： G06F17/2247 ,  G06F17/211 ,  G06F17/212 ,  G06F17/218 ,  G06F17/24 ,  G06F21/6245 ,  G06F2221/032

摘要： A method and apparatus for masking and unmasking content. A system configured to practice the example method embodiment parses a markup language document to identify a location of a section of the markup language document to mask and selects, based on a content type for content within the section, replacement content for the section. Then the system saves a copy of the section in a storage external to the markup language document. The system inserts the replacement content in the markup language document at the location in place of the section to mask the section while preserving formatting and layout of the markup language document. Upon receiving an indication to restore the section, the system inserts the copy of the section in the markup language document at the location in place of the replacement content.

摘要翻译： 一种用于屏蔽和揭示内容的方法和装置。 被配置为练习示例性方法实施例的系统解析标记语言文档以识别标记语言文档的一部分的位置，以基于该部分内的内容的内容类型来屏蔽和选择该部分的替换内容。 然后系统将该部分的副本保存在标记语言文档外部的存储器中。 该系统将标记语言文档中的替换内容插入到该部分的位置以掩盖该部分，同时保留标记语言文档的格式和布局。 在接收到恢复该部分的指示之后，系统将标记语言文档的副本在替换内容的位置处插入。

公开(公告)号：US08910927B2

公开(公告)日：2014-12-16

申请号：US13621262

申请日：2012-09-16

申请人： Kevin J. Lee ,  Tony James Berry

发明人： Kevin J. Lee ,  Tony James Berry

IPC分类号： B25B1/22 ,  B25B1/20 ,  F16M11/02

CPC分类号： B25B5/003 ,  B25B5/006 ,  B25B5/14

摘要： An archery bow holding device that is preferably mounted to a ball joint assembly for attachment to a table top, bench or like surface, and provides a movable mount for the archery bow holding device that holds an archery bow for performing work thereon. The preferred ball joint assembly includes a cylindrical housing that is slotted on opposite sides thereof from a center opening in the housing top and contains a ball that mounts a stem that the archery bow holding device is secured to, with the stem fitted through a slot through the housing top, to tilt between the slots and pivot when the ball in unlocked and, with the ball locked, provides a rigid mount to the archery bow holding device that includes a main beam that is bent to provide a rest for an archery bow limb positioned and clamped there against for an operator to work on.

摘要翻译： 一种射箭弓保持装置，其优选地安装到球接头组件以附接到桌面，台座或类似表面，并且为用于在其上执行作业的弓箭弓保持装置提供用于射箭弓保持装置的可移动支架。 优选的球窝接头组件包括一个圆柱形壳体，该圆柱形壳体与壳体顶部的中心开口的相对侧开槽，并且包含一个球体，该球体安装一个杆，该球体固定在射箭弓保持装置上，杆体通过狭槽穿过 壳体顶部在槽之间倾斜并且当球解锁时枢转并且随着球锁定，向弓箭头保持装置提供刚性安装件，其包括被弯曲以提供弓箭弓的休息的主梁 定位和夹紧在那里，以供操作员工作。