PROCESS FOR PRODUCING ELECTROLYTIC CAPACITORS HAVING A LOW LEAKAGE CURRENT
    1.
    发明申请
    PROCESS FOR PRODUCING ELECTROLYTIC CAPACITORS HAVING A LOW LEAKAGE CURRENT 审中-公开
    用于生产具有低漏电流的电解电容器的方法

    公开(公告)号:US20110128676A1

    公开(公告)日:2011-06-02

    申请号:US12995467

    申请日:2009-05-13

    Abstract: Process for producing a capacitor anode based on at least one of a valve metal and a compound having properties comparable to a valve metal includes providing a pressing or cutting tool which is at least one of made of and coated with a pressing or cutting tool material comprising at least one of a metal carbide, an oxide, a boride, a nitride, a silicide, a carbonitride or alloys thereof, a ceramic material, a hardened steel, an alloy steel, and a capacitor anode material. Particles of the at least one of a valve metal and a compound having properties comparable to a valve metal are pressed or cut with the pressing or cutting tool so as to produce a porous electrode body and form the capacitor anode.

    Abstract translation: 基于阀金属和具有与阀金属相当的性质的化合物中的至少一种制造电容器阳极的方法包括提供压制或切割工具,所述压制或切削工具是由压制或切削工具材料制成并涂覆的至少一种,包括 金属碳化物,氧化物,硼化物,氮化物,硅化物,碳氮化物或其合金中的至少一种,陶瓷材料,硬化钢,合金钢和电容器负极材料中的至少一种。 使用压制或切割工具对具有与阀金属相当的性能的阀金属和化合物中的至少一种的颗粒进行压制或切割,以便产生多孔电极体并形成电容器阳极。

    PROCESS FOR SEPARATING ZIRCONIUM AND HAFNIUM
    2.
    发明申请
    PROCESS FOR SEPARATING ZIRCONIUM AND HAFNIUM 失效
    分离ZIRCONIUM和HAFNIUM的方法

    公开(公告)号:US20070283536A1

    公开(公告)日:2007-12-13

    申请号:US11743175

    申请日:2007-05-02

    CPC classification number: B01D9/004 C07F7/003

    Abstract: The present invention provides a new process for separating zirconium and hafnium compounds, in particular to remove traces of zirconium compounds from hafnium compounds, using fractional crystallisation, as well as hafnium compounds obtainable in accordance with this process.

    Abstract translation: 本发明提供了一种用于分离锆和铪化合物的新方法,特别是使用分级结晶从铪化合物中除去痕量的锆化合物,以及根据该方法可获得的铪化合物。

    Method of polishing metal and metal/dielectric structures
    3.
    发明申请
    Method of polishing metal and metal/dielectric structures 审中-公开
    抛光金属和金属/电介质结构的方法

    公开(公告)号:US20050026205A1

    公开(公告)日:2005-02-03

    申请号:US10929227

    申请日:2004-08-30

    CPC classification number: C09G1/02 H01L21/3212

    Abstract: A composition for the chemical-mechanical polishing of metal and metal/dielectric structures, containing 7 to 100% by volume of a cationically stablilized silica sol which contains 30% by weight of SiO2 and the SiO2 particles of which have a mean particle size of less than 300 nm, with a pH of from 4 to 10, is distinguished by a TaN removal rate of ≧40 nm per min and an improved barrier layer:metal selectivity of at least 2:1 or greater and a barrier layer:dielectric selectivity of at least 2:1 or above.

    Abstract translation: 用于金属和金属/电介质结构的化学机械抛光的组合物,其包含7至100体积%的阳离子稳定的硅溶胶,其含有30重量%的SiO 2,SiO 2颗粒的平均粒度较小 超过300nm,pH为4至10,其特征在于每分钟≥40nm的TaN去除速率和改进的阻挡层:至少2:1或更大的金属选择性和阻挡层:介电选择性 至少2:1或以上。

    Process for separating zirconium and hafnium
    5.
    发明授权
    Process for separating zirconium and hafnium 失效
    锆和铪分离方法

    公开(公告)号:US07635396B2

    公开(公告)日:2009-12-22

    申请号:US11743175

    申请日:2007-05-02

    CPC classification number: B01D9/004 C07F7/003

    Abstract: The present invention provides a new process for separating zirconium and hafnium compounds, in particular to remove traces of zirconium compounds from hafnium compounds, using fractional crystallisation, as well as hafnium compounds obtainable in accordance with this process.

    Abstract translation: 本发明提供了一种用于分离锆和铪化合物的新方法,特别是使用分级结晶从铪化合物中除去痕量的锆化合物,以及根据该方法可获得的铪化合物。

    Process for producing thin hafnium or zirconium nitride coatings
    6.
    发明申请
    Process for producing thin hafnium or zirconium nitride coatings 审中-公开
    生产薄铪或氮化锆涂层的方法

    公开(公告)号:US20070042224A1

    公开(公告)日:2007-02-22

    申请号:US11482385

    申请日:2006-07-07

    Abstract: A process for producing hafnium(III) nitride (HfN) or zirconium nitride coatings by means of the CVD method (chemical vapour deposition) from a reactive gas on a substrate surface, the HfN coating or ZrN coating and their use are described. In the process, a hafnium or zirconium tetrakis(dialkylamide) having the general formula Hf(NR1R2)4 or Zr(NR1R2)4 wherein R1 and R2 denote identical or different, straight-chain or branched C1 to C4 alkyl radicals, is used as the Hf precursor or Zr precursor and a hydrazine derivative having the general formula H2N—NR3R4 wherein R3 denotes a straight-chain or branched C1 to C4 alkyl radical and R4 independently denotes a C1 to C4 alkyl radical or H, is used as the reactive gas.

    Abstract translation: 描述了通过CVD法(化学气相沉积)从衬底表面上的反应气体,HfN涂层或ZrN涂层及其用途制造氮化铪(III)(HfN)或氮化锆涂层的方法。 在该方法中,具有通式<βin-line-formula description =“In-line Formulas”的四(二烷基酰胺)铪或锆,其末端=“铅”→Hf(NR 1) 4/3或3/4或3/4或3/4 -line-formula description =“In-line Formulas”end =“tail”?>其中R 1和R 2表示相同或不同的直链或支链C 使用1〜4个C 4烷基作为Hf前体或Zr前体,通式为“π-in-line-formula”的肼衍生物=“In- 线公式“end =”lead“?> H N-NR 3 在线公式描述=”In 其中R 3表示直链或支链C 1至C 4烷基,并且其中R 3表示直链或支链C 1至C 4烷基, R 4独立地表示C 1至C 4烷基或H,被用作反应气体。

    SUPPORT PLATE FOR SPUTTER TARGETS
    9.
    发明申请
    SUPPORT PLATE FOR SPUTTER TARGETS 审中-公开
    支持飞利浦目标板

    公开(公告)号:US20070205102A1

    公开(公告)日:2007-09-06

    申请号:US11568218

    申请日:2005-04-09

    CPC classification number: C23C14/3407 C22C27/00

    Abstract: Backing plate for sputter targets made of a composite material which comprises 5 to 99 wt. % of at least one refractory metal from the group consisting of Mo, W, Re and Ta and 95 to 1 wt. % of at least one fuirther metallic component from the group consisting of Cu, Ag and Au, process for the production thereof and unit which comprises the backing plate and a sputter target.

    Abstract translation: 由复合材料制成的溅射靶的背板,其包含5至99wt。 至少一种由Mo,W,Re和Ta组成的组中的至少一种难熔金属的%和95至1wt。 至少一种由Cu,Ag和Au组成的组的至少一种金属组分的%,其制备方法以及包含背板和溅射靶的单元。

    Nanoparticulate, redispersible zinc oxide gels
    10.
    发明授权
    Nanoparticulate, redispersible zinc oxide gels 失效
    纳米微粒,可再分散的氧化锌凝胶

    公开(公告)号:US06710091B1

    公开(公告)日:2004-03-23

    申请号:US09913990

    申请日:2001-08-21

    CPC classification number: B82Y5/00 C01G9/02 C08K3/22 C08K2003/2296

    Abstract: A method for the preparation of nano size zinc oxide particles having an average primary particle diameter of less than or equal to 15 nm, which are redispersible in organic solvents and/or water, by basic hydrolysis of at least one zinc compound in alcohol or an alcohol/water mixture. The hydrolysis is carried out with substoichiometric amounts of base, based on the zinc compound. The precipitate which originally forms during hydrolysis is left to mature until the zinc oxide has completely flocculated. This precipitate is then thickened to give a gel and separated off from the supernatant phase.

    Abstract translation: 一种制备平均初级粒径小于或等于15nm的纳米尺寸氧化锌颗粒的方法,其通过在醇或其中的至少一种锌化合物的碱性水解而可再分散于有机溶剂和/或水中 酒精/水混合物。 基于锌化合物,以亚化学计量的碱进行水解。 最初在水解过程中形成的沉淀物成熟直到氧化锌完全絮凝。 然后将该沉淀物增稠以得到凝胶并从上清液相分离。

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