利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

12 条记录 (耗时 0.022 秒)

    SUPPORT PLATE FOR SPUTTER TARGETS
    1.
    发明申请
    SUPPORT PLATE FOR SPUTTER TARGETS 审中-公开
    支持飞利浦目标板

    公开(公告)号：US20070205102A1

    公开(公告)日：2007-09-06

    申请号：US11568218

    申请日：2005-04-09

    申请人： Roland Scholl ,  Bernd Meyer ,  Gerd Passing ,  Gerhard Wotting

    发明人： Roland Scholl ,  Bernd Meyer ,  Gerd Passing ,  Gerhard Wotting

    IPC分类号： C23C14/00

    CPC分类号： C23C14/3407 ,  C22C27/00

    摘要： Backing plate for sputter targets made of a composite material which comprises 5 to 99 wt. % of at least one refractory metal from the group consisting of Mo, W, Re and Ta and 95 to 1 wt. % of at least one fuirther metallic component from the group consisting of Cu, Ag and Au, process for the production thereof and unit which comprises the backing plate and a sputter target.

    摘要翻译： 由复合材料制成的溅射靶的背板，其包含5至99wt。 至少一种由Mo，W，Re和Ta组成的组中的至少一种难熔金属的％和95至1wt。 至少一种由Cu，Ag和Au组成的组的至少一种金属组分的％，其制备方法以及包含背板和溅射靶的单元。

    Sintered material based on Si.sub.3 N.sub.4 and processes for its production
    8.
    发明授权
    Sintered material based on Si.sub.3 N.sub.4 and processes for its production 失效
    基于Si3N4的烧结材料及其生产工艺

    公开(公告)号：US5362691A

    公开(公告)日：1994-11-08

    申请号：US995328

    申请日：1992-12-23

    申请人： Gerhard Wotting ,  Gerhard Leimer ,  Lutz Frassek

    发明人： Gerhard Wotting ,  Gerhard Leimer ,  Lutz Frassek

    IPC分类号： C04B35/626 ,  C04B35/584 ,  C04B35/58

    CPC分类号： C04B35/584 ,  Y10S264/64

    摘要： Si.sub.3 N.sub.4 -based sintered compositions containing MgO and optionally other sintering additives, which after sintering, has a flexural strength level at room temperatures of .gtoreq.800 MPa, measured by the four-point bending method, and a Weibull modulus of >15, is produced by mixing MgO, any additional sintering additives and Si.sub.3 N.sub.4 powder to form a mixture, calcining the mixture in an oxygen-free atmosphere to obtain a pre-synthesis mixture, and adding the pre-synthesis mixture to uncalcined Si.sub.3 N.sub.4 powder which is then sintered.

    摘要翻译： 含有MgO和任选的其它烧结添加剂的Si 3 N 4基烧结组合物，其在烧结后具有通过四点弯曲法测量的> / = 800MPa的室温下的挠曲强度水平，并且威布尔模量> 15。 通过混合MgO，任何另外的烧结添加剂和Si 3 N 4粉末形成混合物，在无氧气氛中煅烧混合物以获得预合成混合物，并将预合成混合物加入到未煅烧的Si 3 N 4粉末中，然后烧结。

    Method of making MoO2 powders, products made from MoO2 powders, deposition of MoO2 thin films, and methods of using such materials
    9.
    发明申请
    Method of making MoO2 powders, products made from MoO2 powders, deposition of MoO2 thin films, and methods of using such materials 有权
    制备MoO2粉末的方法，由MoO 2粉末制成的产品，MoO 2薄膜的沉积以及使用这种材料的方法

    公开(公告)号：US20060165572A1

    公开(公告)日：2006-07-27

    申请号：US11334140

    申请日：2006-01-18

    申请人： Lawrence McHugh ,  Prabhat Kumar ,  David Meendering ,  Richard Wu ,  Gerhard Wotting ,  Richard Nicholson

    发明人： Lawrence McHugh ,  Prabhat Kumar ,  David Meendering ,  Richard Wu ,  Gerhard Wotting ,  Richard Nicholson

    IPC分类号： C01G39/00

    CPC分类号： C01G39/02 ,  C01P2006/10 ,  C01P2006/12 ,  C01P2006/40 ,  H01L51/5206

    摘要： The invention relates to high purity MoO2 powder by reduction of ammonium molybdate or molybdenum trioxide using hydrogen as the reducing agent in a rotary or boat furnace. Consolidation of the powder by press/sintering, hot pressing, and/or HIP is used to make discs, slabs, or plates, which are used as sputtering targets. The MoO2 disc, slab, or plate form is sputtered on a substrate using a suitable sputtering method or other physical means to provide a thin film having a desired film thickness. The thin films have properties such as electrical, optical, surface roughness, and uniformity comparable or superior to those of indium-tin oxide (ITO) and zinc-doped ITO in terms of transparency, conductivity, work function, uniformity, and surface roughness. The MoO2 and MoO2 containing thin films can be used in organic light-emitting diodes (OLED), liquid crystal display (LCD), plasma display panel (PDP), field emission display (FED), thin film solar cell, low resistivity ohmic contacts, and other electronic and semiconductor devices.

    摘要翻译： 本发明涉及通过在旋转或船式炉中使用氢作为还原剂还原钼酸铵或三氧化钼来制备高纯度MoO 2 N 2粉末。 使用通过压制/烧结，热压和/或HIP将粉末固结制成用作溅射靶的盘，板或板。 使用合适的溅射法或其他物理方法将MoO 2/2/2盘，板或板形式溅射在基板上，以提供具有所需膜厚度的薄膜。 在透明性，导电性，功函数，均匀性和表面粗糙度方面，薄膜具有与铟锡氧化物（ITO）和掺杂锌的ITO相当或优于电，光学，表面粗糙度和均匀性的性质。 含有MoO 2和MoO 2的薄膜可以用于有机发光二极管（OLED），液晶显示器（LCD），等离子体显示面板（PDP） 场致发射显示器（FED），薄膜太阳能电池，低电阻率欧姆接触器等电子和半导体器件。