-
公开(公告)号：US20070248829A1
公开(公告)日：2007-10-25
申请号：US11575262
申请日：2005-09-07
申请人： Goh Iwamoto , Hideki Hirotsuru , Kazunori Hirahara
发明人： Goh Iwamoto , Hideki Hirotsuru , Kazunori Hirahara
IPC分类号： B32B9/00
CPC分类号： H05K1/05 , C04B41/009 , C04B41/5155 , C04B41/88 , C04B2111/00844 , H01L23/13 , H01L23/142 , H01L23/15 , H01L23/3733 , H01L2924/0002 , H05K1/0284 , H05K1/0306 , H05K2201/0116 , H05K2201/09018 , Y10T428/12007 , Y10T428/249957 , Y10T428/249971 , Y10T428/249974 , Y10T428/249986 , Y10T428/249987 , Y10T428/24999 , Y10T428/26 , C04B35/565 , C04B38/00 , C04B41/4521 , C04B41/4523 , H01L2924/00
摘要： An aluminum/silicon carbide composite prepared by infiltrating a flat silicon carbide porous body with a metal containing aluminum as the main component, including an aluminum alloy layer made of a metal containing aluminum as the main component on both principal planes, and one principal plane is bonded to a circuit plate and the other principal plane is utilized as a radiation plane. The silicon carbide porous body is formed or machined into a convexly bowed shape, and after infiltration with the metal containing aluminum as the main component, the aluminum alloy layer on the radiation plane is further machined to form the bow shape. The aluminum/silicon carbide composite is suitable as a base plate for a ceramic circuit plate on which semiconductor components are mounted, for which high reliability is required.
摘要翻译： 通过以包含铝作为主要成分的金属浸渍扁平碳化硅多孔体制备的铝/碳化硅复合体，包括由铝构成的金属作为主要成分在两个主平面上的铝合金层和一个主平面， 结合到电路板，另一个主平面用作辐射平面。 碳化硅多孔体形成或加工成凸形状，并且在以含有铝的金属为主要成分的渗透后，辐射面上的铝合金层进一步加工成弓形。 铝/碳化硅复合材料适合作为安装半导体元件的陶瓷电路板的基板，需要高可靠性。
-
2.发明授权Aluminum-silicon carbide composite and heat dissipation device employing the same 有权铝 - 碳化硅复合材料和采用其的散热装置公开(公告)号：US08025962B2
公开(公告)日：2011-09-27
申请号：US12095005
申请日：2006-11-13
申请人： Hideki Hirotsuru , Goh Iwamoto , Hideo Tsukamoto , Akira Miyai , Yoshio Sasaki
发明人： Hideki Hirotsuru , Goh Iwamoto , Hideo Tsukamoto , Akira Miyai , Yoshio Sasaki
CPC分类号： H01L23/13 , C04B35/565 , C04B35/71 , C04B41/009 , C04B41/5155 , C04B41/88 , C04B2111/00844 , C04B2235/3217 , C04B2235/3418 , C04B2235/402 , C04B2235/5436 , C04B2235/5472 , C04B2235/77 , C04B2235/9607 , C22C1/0475 , C22C1/051 , C22C29/065 , H01L23/15 , H01L23/3731 , H01L23/3733 , H01L23/3735 , H01L2924/0002 , Y10T428/12361 , Y10T428/12389 , Y10T428/12479 , Y10T428/12736 , Y10T428/12993 , Y10T428/2495 , Y10T428/24975 , Y10T428/249957 , Y10T428/249969 , Y10T428/249974 , C04B41/4521 , C04B41/4523 , C04B38/00 , H01L2924/00
摘要： An aluminum-silicon carbide composite suitable for a base plate for power module, having an aluminum-silicon carbide composite, with a front and a rear surface plane, that is a flat plate-shaped silicon carbide porous body impregnated with a metal mainly containing aluminum, and an aluminum layer made of a metal mainly containing aluminum formed only on the front surface plane, wherein the rear surface plane of the composite is exposed to the outside, and the shape of the exposed aluminum-silicon carbide composite is rectangular, optionally having peripheral portions encompassing holes removed. Plating is imparted to the composite by providing an aluminum layer on the rear surface plane. Flatness of the composite is improved by grinding its rear surface so that the composite is exposed to the outside. Warpage after grinding the rear surface, is controlled by controlling the thickness of the aluminum layer.
摘要翻译： 一种适用于功率模块用基板的铝 - 碳化硅复合体，具有铝 - 碳化硅复合材料，前表面和后表面是浸渍有主要含有铝的金属的平板状碳化硅多孔体 ，并且由主要含有铝的金属制成的铝层仅形成在前表面上，其中复合材料的后表面平面暴露于外部，并且暴露的铝 - 碳化硅复合材料的形状为矩形，可选地具有 包围孔的周边部分被去除。 通过在背面平面上设置铝层来赋予复合材料电镀。 复合材料的平整度通过研磨其后表面而提高，使得复合材料暴露于外部。 研磨后表面后的翘曲是通过控制铝层的厚度来控制的。
-
3.发明授权公开(公告)号：US07993728B2
公开(公告)日：2011-08-09
申请号：US12298598
申请日：2007-04-23
IPC分类号： B32B3/26
CPC分类号： H01L23/3733 , C04B41/009 , C04B41/5155 , C04B41/52 , C04B41/88 , C04B41/90 , C04B2111/00844 , C22C1/1036 , C22C29/065 , C22C32/0063 , C22C2001/1073 , H01L23/13 , H01L23/15 , H01L23/3731 , H01L23/3735 , H01L2924/0002 , Y10T428/12479 , Y10T428/24496 , Y10T428/24999 , C04B41/4521 , C04B41/4523 , C04B41/5096 , C04B41/515 , C04B14/4631 , C04B41/4541 , C04B41/5144 , C04B35/565 , C04B38/00 , H01L2924/00
摘要： A base plate for power module, comprising an aluminum-silicon carbide composite and aluminum layers made of a metal containing aluminum as the main component formed on respective principal planes of the aluminum-silicon carbide composite, wherein the aluminum-silicon carbide composite is produced by forming or fabricating a flat plate-shaped silicon carbide porous body to have a thickness difference of at most 100 μm in the entire porous body and piling such porous bodies as they are each sandwiched between mold-releasing plates so that the fastening torque in the plane direction becomes from 1 to 20 Nm, and infiltrating a metal containing aluminum as the main component into the silicon carbide porous bodies,wherein the aluminum layers each has an average thickness of from 10 to 150 μm, the difference between the maximum thickness and the minimum thickness of the aluminum layer in each principal plane is at most 80 μm, and the difference between average thicknesses of the aluminum layers on the respective principal planes is at most 50 μm, and wherein the shape of the silicon carbide porous body is rectangle or a rectangle from which peripheral portions encompassing holes are removed.
摘要翻译： 一种用于功率模块的基板，包括铝 - 碳化硅复合材料和由在铝 - 碳化硅复合材料的相应主平面上形成的以铝为主要成分的金属制成的铝层，其中铝 - 碳化硅复合材料由 在整个多孔体中形成或制造平板状碳化硅多孔体至多具有100μm的厚度差，并将这些多孔体堆叠在各自夹在脱模板之间，使得在平面中的紧固扭矩 方向为1〜20Nm，将含有铝的金属作为主要成分浸渍到碳化硅多孔体中，其中，铝层的平均厚度为10〜150μm，最大厚度与最小值之间的差 每个主平面中铝层的厚度至多为80μm，铝的平均厚度之差 各个主面上的层为50μm以下，碳化硅多孔体的形状为矩形或长方形，除去周边部分。
-
4.发明申请ALUMINUM/SILICON CARBIDE COMPOSITE AND HEAT RADIATION PART MAKING USE OF THE SAME 有权铝/碳化硅复合材料和热辐射部分使用它们公开(公告)号：US20090280351A1
公开(公告)日：2009-11-12
申请号：US12095005
申请日：2006-11-13
申请人： Hideki Hirotsuru , Goh Iwamoto , Hideo Tsukamoto , Akira Miyai , Yoshio Sasaki
发明人： Hideki Hirotsuru , Goh Iwamoto , Hideo Tsukamoto , Akira Miyai , Yoshio Sasaki
IPC分类号： B32B5/18
CPC分类号： H01L23/13 , C04B35/565 , C04B35/71 , C04B41/009 , C04B41/5155 , C04B41/88 , C04B2111/00844 , C04B2235/3217 , C04B2235/3418 , C04B2235/402 , C04B2235/5436 , C04B2235/5472 , C04B2235/77 , C04B2235/9607 , C22C1/0475 , C22C1/051 , C22C29/065 , H01L23/15 , H01L23/3731 , H01L23/3733 , H01L23/3735 , H01L2924/0002 , Y10T428/12361 , Y10T428/12389 , Y10T428/12479 , Y10T428/12736 , Y10T428/12993 , Y10T428/2495 , Y10T428/24975 , Y10T428/249957 , Y10T428/249969 , Y10T428/249974 , C04B41/4521 , C04B41/4523 , C04B38/00 , H01L2924/00
摘要： An aluminum-silicon carbide composite suitable for a base plate for power module is provided. A base plate for power module, comprising an aluminum-silicon carbide composite that is a flat plate-shaped silicon carbide porous body impregnated with a metal containing aluminum as the main component, and an aluminum layer made of a metal containing aluminum as the main component formed only on one of the principal planes of the composite, wherein a rear surface being the other one of principal planes of the aluminum-silicon carbide composite is exposed to the outside, and the shape of the exposed aluminum-silicon carbide composite is a rectangle or a rectangle from which portions encompassing holes in the peripheral portion are removed. Plating property is imparted to the composite by providing an aluminum layer on one principal plane of the composite, and the flatness of the composite was improved by grinding its rear surface so that the aluminum-silicon carbide composite is exposed to the outside, and further, the warpage shape after the rear surface is ground is controlled by controlling the thickness of the aluminum layer.
摘要翻译： 提供一种适用于功率模块底板的铝 - 碳化硅复合材料。 一种用于功率模块的基板，包括铝 - 碳化硅复合体，其为浸有含有铝作为主要成分的金属的平板状碳化硅多孔体，以及由以铝为主要成分的金属制成的铝层 仅形成在复合材料的一个主平面上，其中作为铝 - 碳化硅复合材料的另一个主平面的后表面暴露于外部，并且暴露的铝 - 碳化硅复合材料的形状是矩形 或从外围部分中包围孔的部分移除的矩形。 通过在复合材料的一个主平面上设置铝层，赋予复合材料的电镀特性，并通过研磨其后表面改善复合材料的平整度，使得铝 - 碳化硅复合材料暴露于外部， 通过控制铝层的厚度来控制后表面被研磨后的翘曲形状。
-
公开(公告)号：US07838107B2
公开(公告)日：2010-11-23
申请号：US11575262
申请日：2005-09-07
申请人： Goh Iwamoto , Hideki Hirotsuru , Kazunori Hirahara
发明人： Goh Iwamoto , Hideki Hirotsuru , Kazunori Hirahara
CPC分类号： H05K1/05 , C04B41/009 , C04B41/5155 , C04B41/88 , C04B2111/00844 , H01L23/13 , H01L23/142 , H01L23/15 , H01L23/3733 , H01L2924/0002 , H05K1/0284 , H05K1/0306 , H05K2201/0116 , H05K2201/09018 , Y10T428/12007 , Y10T428/249957 , Y10T428/249971 , Y10T428/249974 , Y10T428/249986 , Y10T428/249987 , Y10T428/24999 , Y10T428/26 , C04B35/565 , C04B38/00 , C04B41/4521 , C04B41/4523 , H01L2924/00
摘要： An aluminum/silicon carbide composite prepared by infiltrating a flat silicon carbide porous body with a metal containing aluminum as the main component, including an aluminum alloy layer made of a metal containing aluminum as the main component on both principal planes, and one principal plane is bonded to a circuit plate and the other principal plane is utilized as a radiation plane. The silicon carbide porous body is formed or machined into a convexly bowed shape, and after infiltration with the metal containing aluminum as the main component, the aluminum alloy layer on the radiation plane is further machined to form the bow shape. The aluminum/silicon carbide composite is suitable as a base plate for a ceramic circuit plate on which semiconductor components are mounted, for which high reliability is required.
摘要翻译： 通过以包含铝作为主要成分的金属浸渍扁平碳化硅多孔体制备的铝/碳化硅复合体，包括由铝构成的金属作为主要成分在两个主平面上的铝合金层和一个主平面， 结合到电路板，另一个主平面用作辐射平面。 碳化硅多孔体形成或加工成凸形状，并且在以含有铝的金属为主要成分的渗透后，辐射面上的铝合金层进一步加工成弓形。 铝/碳化硅复合材料适合作为安装半导体元件的陶瓷电路板的基板，需要高可靠性。
-
6.发明申请公开(公告)号：US20090092793A1
公开(公告)日：2009-04-09
申请号：US12298598
申请日：2007-04-23
IPC分类号： B32B3/26
CPC分类号： H01L23/3733 , C04B41/009 , C04B41/5155 , C04B41/52 , C04B41/88 , C04B41/90 , C04B2111/00844 , C22C1/1036 , C22C29/065 , C22C32/0063 , C22C2001/1073 , H01L23/13 , H01L23/15 , H01L23/3731 , H01L23/3735 , H01L2924/0002 , Y10T428/12479 , Y10T428/24496 , Y10T428/24999 , C04B41/4521 , C04B41/4523 , C04B41/5096 , C04B41/515 , C04B14/4631 , C04B41/4541 , C04B41/5144 , C04B35/565 , C04B38/00 , H01L2924/00
摘要： A base plate for power module, comprising an aluminum-silicon carbide composite and aluminum layers made of a metal containing aluminum as the main component formed on respective principal planes of the aluminum-silicon carbide composite, wherein the aluminum-silicon carbide composite is produced by forming or fabricating a flat plate-shaped silicon carbide porous body to have a thickness difference of at most 100 μm in the entire porous body and piling such porous bodies as they are each sandwiched between mold-releasing plates so that the fastening torque in the plane direction becomes from 1 to 20 Nm, and infiltrating a metal containing aluminum as the main component into the silicon carbide porous bodies,wherein the aluminum layers each has an average thickness of from 10 to 150 μm, the difference between the maximum thickness and the minimum thickness of the aluminum layer in each principal plane is at most 80 μm, and the difference between average thicknesses of the aluminum layers on the respective principal planes is at most 50 μm, and wherein the shape of the silicon carbide porous body is rectangle or a rectangle from which peripheral portions encompassing holes are removed.
摘要翻译： 一种用于功率模块的基板，包括铝 - 碳化硅复合材料和由在铝 - 碳化硅复合材料的相应主平面上形成的以铝为主要成分的金属制成的铝层，其中铝 - 碳化硅复合材料由 在整个多孔体中形成或制造平板状的碳化硅多孔体至少具有100微米的厚度差异，并将这些多孔体堆叠在各自夹在脱模板之间，使得在平面中的紧固扭矩 方向为1〜20Nm，将含有铝的金属作为主要成分浸渍到碳化硅多孔体中，其中，铝层的平均厚度为10〜150μm，最大厚度与最小值之差 每个主平面中铝层的厚度至多为80μm，铝的平均厚度之差 各个主面上的层为50μm以下，碳化硅多孔体的形状为长方形或长方形，除去周边部分。
-
7.发明申请公开(公告)号：US20090075056A1
公开(公告)日：2009-03-19
申请号：US12299143
申请日：2007-05-08
申请人： Goh Iwamoto , Hideki Hirotsuru
发明人： Goh Iwamoto , Hideki Hirotsuru
CPC分类号： C04B41/88 , B22D19/14 , B24C1/045 , B26F3/004 , C04B35/565 , C04B35/6316 , C04B41/009 , C04B41/5155 , C04B2111/00844 , C04B2235/3418 , C04B2235/3826 , C04B2235/5436 , C04B2235/5481 , C04B2235/6583 , C22C29/065 , H01L21/4878 , H01L23/147 , H01L23/3733 , H01L23/3735 , H01L23/4922 , H01L2924/0002 , Y10T428/24999 , C04B41/4521 , C04B41/4523 , C04B41/4572 , C04B41/5096 , C04B41/515 , C04B41/53 , C04B38/00 , H01L2924/00
摘要： An aluminum-silicon carbide composite suitable as e.g. a base plate for power module is provided.An aluminum-silicon carbide composite comprising a flat plate-shaped silicon carbide porous body infiltrated with a metal containing aluminum as the main component, aluminum layers made of a material containing aluminum as the main component formed on both principal planes of the porous body, wherein the aluminum-silicon carbide composite has side faces formed by abrasive jet fabrication and the side faces do not have the aluminum layers made of a metal containing aluminum as the main component.
摘要翻译： 适用于例如铝的碳化硅铝复合材料。 提供了功率模块的基板。 一种铝 - 碳化硅复合体，包括以铝为主要成分浸渍的平板状碳化硅多孔体，在多孔体的两个主面上形成由以铝为主要成分的材料制成的铝层，其中， 铝 - 碳化硅复合材料具有通过研磨射流制造形成的侧面，并且侧面不具有由以铝为主要成分的金属制成的铝层。
-
-
-
-
-
-
搜索结果
7 条记录 (耗时 0.014 秒)
