公开(公告)号：US08883564B2

公开(公告)日：2014-11-11

申请号：US13148977

申请日：2010-02-08

申请人： Hideki Hirotsuru ,  Satoshi Higuma ,  Shinya Narita ,  Yoshihiko Tsujimura

发明人： Hideki Hirotsuru ,  Satoshi Higuma ,  Shinya Narita ,  Yoshihiko Tsujimura

IPC分类号： H01L33/64 ,  C04B41/88 ,  H05K1/05 ,  C04B41/51 ,  H01L23/373 ,  H01L23/14 ,  C04B41/00 ,  B22F3/26 ,  C04B111/00

CPC分类号： C04B41/88 ,  B22F3/26 ,  B23D57/0023 ,  B23D61/185 ,  B28D5/045 ,  C04B41/009 ,  C04B41/5155 ,  C04B2111/00844 ,  H01L23/142 ,  H01L23/373 ,  H01L23/3735 ,  H01L33/641 ,  H01L2924/0002 ,  H05K1/05 ,  H05K2201/0323 ,  Y10T83/04 ,  Y10T428/24273 ,  Y10T428/24909 ,  Y10T428/24917 ,  C04B41/4519 ,  C04B41/4521 ,  C04B41/4523 ,  C04B41/5096 ,  C04B35/522 ,  C04B38/00 ,  H01L2924/00

摘要： A process for producing a substrate, which comprises processing an aluminum/graphite composite into plates having a thickness of 0.5-3 mm using a multi-wire saw under the following conditions (1) to (4): (1) the wires have abrasive grains bonded thereto which are one or more substances selected from diamond, C—BN, silicon carbide, and alumina and have an average particle diameter of 10-100 μm; (2) the wires have a diameter of 0.1-0.3 mm; (3) the wires are run at a rate of 100-700 m/min; and (4) the composite is cut at a rate of 0.1-2 mm/min. The aluminum/graphite composite has a surface roughness (Ra) of 0.1-3 μm, a thermal conductivity at 25° C. of 150-300 W/mK, a ratio of the maximum to the minimum value of thermal conductivity in three perpendicular directions of 1-1.3, a coefficient of thermal expansion at 25-150° C. of 4×106 to 7.5×10−6/K, a ratio of the maximum to the minimum value of coefficient of thermal expansion in three perpendicular directions of 1-1.3, and a three-point bending strength of 50-150 MPa.

摘要翻译： 一种生产基材的方法，其包括在下列条件（1）至（4）中使用多线锯将铝/石墨复合材料加工成厚度为0.5-3mm的板：（1）所述金属丝具有磨料 作为选自金刚石，C-BN，碳化硅，氧化铝中的一种或多种物质的平均粒径为10〜100μm的颗粒; （2）电线的直径为0.1-0.3mm; （3）电线以100-700m / min的速度运行; 和（4）以0.1-2mm / min的速率切割复合材料。 铝/石墨复合体的表面粗糙度（Ra）为0.1-3μm，25℃下的热导率为150-300W / mK，三个垂直方向的最大值与最小导热率之比 为1-1.3，25-150℃的热膨胀系数为4×10 6〜7.5×10 -6 / K，三个垂直方向的最大热膨胀系数与最小值之比为1 -1.3，三点弯曲强度为50-150MPa。

公开(公告)号：US09299888B2

公开(公告)日：2016-03-29

申请号：US14344196

申请日：2012-09-05

申请人： Yosuke Ishihara ,  Hideki Hirotsuru ,  Hideo Tsukamoto

发明人： Yosuke Ishihara ,  Hideki Hirotsuru ,  Hideo Tsukamoto

IPC分类号： H01L33/12 ,  H01L33/00 ,  H01L33/30 ,  H01L33/48 ,  H01L33/64

CPC分类号： H01L33/12 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/30 ,  H01L33/48 ,  H01L33/641 ,  H01L2933/0025 ,  H01L2933/0075

摘要： Disclosed is a clad material for an LED light-emitting element holding substrate in which a plurality of layers composed of different materials are stacked and bonded via a metal layer to a III-V group semiconductor crystal surface, the linear expansion coefficient being 14×10−6/K or less and the thermal conductivity at a temperature of 25° C. being 200 W/mK or greater. The clad material is composed of three alternately stacked layers: two copper layers and a molybdenum layer, the molybdenum layer being 10 to 60 vol % and the difference in thickness between the copper layers being 5% or less; or a clad material composed of three copper layers alternately stacked with molybdenum layers to make five layers, the molybdenum layers being 20 to 70 vol % and the difference in thickness between the top and bottom two copper layers and the molybdenum layers being 5% or less.

摘要翻译： 公开了一种用于LED发光元件保持基板的包覆材料，其中由不同材料组成的多个层通过金属层堆叠并结合到III-V族半导体晶体表面，线性膨胀系数为14×10 -6 / K以下，温度25℃时的导热率为200W / mK以上。 包层材料由三个交替堆叠的层组成：两个铜层和钼层，钼层为10至60体积％，铜层之间的厚度差为5％或更小; 或由三层交替层叠钼层构成五层的包层材料，钼层为20〜70体积％，顶部和底部两个铜层和钼层之间的厚度差为5％以下 。

公开(公告)号：US09017824B2

公开(公告)日：2015-04-28

申请号：US13054342

申请日：2009-07-08

申请人： Hideki Hirotsuru ,  Hideo Tsukamoto

发明人： Hideki Hirotsuru ,  Hideo Tsukamoto

IPC分类号： B32B3/10 ,  B32B27/32 ,  G11B11/105 ,  C03C27/00 ,  B32B15/01 ,  B23P9/00 ,  B32B9/00 ,  B22C3/00 ,  B22D19/14 ,  B22D19/00 ,  C22C26/00 ,  B22F3/26 ,  B22F7/04 ,  H01L23/373 ,  H01L21/48

CPC分类号： C22C26/00 ,  B22F3/26 ,  B22F7/04 ,  B22F2998/00 ,  B22F2998/10 ,  C22C2204/00 ,  H01L21/4882 ,  H01L23/3732 ,  H01L23/3735 ,  H01L2924/0002 ,  H01S5/02484 ,  Y10T428/12361 ,  Y10T428/12625 ,  Y10T428/12736 ,  Y10T428/12993 ,  Y10T428/24322 ,  Y10T428/24355 ,  Y10T428/26 ,  C22C1/10 ,  B22F3/11 ,  B22F3/20 ,  H01L2924/00

摘要： Disclosed is an aluminum-diamond composite having both high thermal conductivity and thermal expansion coefficient close to those of semiconductor elements, which is improved in platability in the surface and surface roughness so that the composite becomes suitable for use as a heat sink of a semiconductor element of the like. Specifically disclosed is a plate-like aluminum-diamond composite containing diamond particles and a metal mainly composed of aluminum. The aluminum-diamond composite is composed of a composite part and surface layers formed on both sides of the composite part, and the surface layers are composed of a material containing a metal mainly composed of aluminum. The diamond particle content is 40-70% by volume of the entire aluminum-diamond composite.

摘要翻译： 公开了一种铝 - 金刚石复合材料，其具有接近于半导体元件的高导热性和热膨胀系数，其在表面的镀覆性和表面粗糙度方面得到改善，使得该复合材料适合用作半导体元件的散热片 的样子。 具体公开的是含有金刚石颗粒和主要由铝组成的金属的板状铝 - 金刚石复合材料。 铝 - 金刚石复合材料由复合部件和形成在复合部件两侧的表面层组成，表面层由主要由铝构成的金属的材料构成。 整个铝 - 金刚石复合材料的金刚石颗粒含量为40-70％（体积）。

公开(公告)号：US20120112236A1

公开(公告)日：2012-05-10

申请号：US13384479

申请日：2010-07-16

申请人： Satoshi Higuma ,  Hideki Hirotsuru ,  Shinya Narita

发明人： Satoshi Higuma ,  Hideki Hirotsuru ,  Shinya Narita

IPC分类号： H01L33/50 ,  H01L33/62

CPC分类号： H01L33/641 ,  H01L23/142 ,  H01L24/73 ,  H01L25/0753 ,  H01L33/647 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Provided is a highly reliable LED package with significantly improved heat radiating properties, manufacturing method of the LED package, and an LED chip assembly used in the LED package. The LED package is characterized in that the LED chip assembly (10) is bonded to a circuit board (11) created by forming metal circuitry (3) on a metal substrate (5) with an insulation layer (4) therebetween, whereas an LED chip (1) of the LED chip assembly and the metal circuitry (3) of the circuit board are connected via an electrical connection member (9), and at least the LED chip assembly and the electrical connection member are encapsulated with resin encapsulant (8) including fluorescent material.

摘要翻译： 提供了一种高度可靠的LED封装，其具有显着改善的散热性能，LED封装的制造方法以及在LED封装中使用的LED芯片组件。 LED封装的特征在于，LED芯片组件（10）被结合到通过在其间具有绝缘层（4）的金属基板（5）上形成金属电路（3）而形成的电路板（11），而LED LED芯片组件的芯片（1）和电路板的金属电路（3）经由电连接构件（9）连接，并且至少LED芯片组件和电连接构件用树脂密封剂（8 ）包括荧光材料。

公开(公告)号：US08025962B2

公开(公告)日：2011-09-27

申请号：US12095005

申请日：2006-11-13

申请人： Hideki Hirotsuru ,  Goh Iwamoto ,  Hideo Tsukamoto ,  Akira Miyai ,  Yoshio Sasaki

发明人： Hideki Hirotsuru ,  Goh Iwamoto ,  Hideo Tsukamoto ,  Akira Miyai ,  Yoshio Sasaki

IPC分类号： B32B3/26 ,  B32B15/00

CPC分类号： H01L23/13 ,  C04B35/565 ,  C04B35/71 ,  C04B41/009 ,  C04B41/5155 ,  C04B41/88 ,  C04B2111/00844 ,  C04B2235/3217 ,  C04B2235/3418 ,  C04B2235/402 ,  C04B2235/5436 ,  C04B2235/5472 ,  C04B2235/77 ,  C04B2235/9607 ,  C22C1/0475 ,  C22C1/051 ,  C22C29/065 ,  H01L23/15 ,  H01L23/3731 ,  H01L23/3733 ,  H01L23/3735 ,  H01L2924/0002 ,  Y10T428/12361 ,  Y10T428/12389 ,  Y10T428/12479 ,  Y10T428/12736 ,  Y10T428/12993 ,  Y10T428/2495 ,  Y10T428/24975 ,  Y10T428/249957 ,  Y10T428/249969 ,  Y10T428/249974 ,  C04B41/4521 ,  C04B41/4523 ,  C04B38/00 ,  H01L2924/00

摘要： An aluminum-silicon carbide composite suitable for a base plate for power module, having an aluminum-silicon carbide composite, with a front and a rear surface plane, that is a flat plate-shaped silicon carbide porous body impregnated with a metal mainly containing aluminum, and an aluminum layer made of a metal mainly containing aluminum formed only on the front surface plane, wherein the rear surface plane of the composite is exposed to the outside, and the shape of the exposed aluminum-silicon carbide composite is rectangular, optionally having peripheral portions encompassing holes removed. Plating is imparted to the composite by providing an aluminum layer on the rear surface plane. Flatness of the composite is improved by grinding its rear surface so that the composite is exposed to the outside. Warpage after grinding the rear surface, is controlled by controlling the thickness of the aluminum layer.

摘要翻译： 一种适用于功率模块用基板的铝 - 碳化硅复合体，具有铝 - 碳化硅复合材料，前表面和后表面是浸渍有主要含有铝的金属的平板状碳化硅多孔体 ，并且由主要含有铝的金属制成的铝层仅形成在前表面上，其中复合材料的后表面平面暴露于外部，并且暴露的铝 - 碳化硅复合材料的形状为矩形，可选地具有 包围孔的周边部分被去除。 通过在背面平面上设置铝层来赋予复合材料电镀。 复合材料的平整度通过研磨其后表面而提高，使得复合材料暴露于外部。 研磨后表面后的翘曲是通过控制铝层的厚度来控制的。

公开(公告)号：US07993728B2

公开(公告)日：2011-08-09

申请号：US12298598

申请日：2007-04-23

申请人： Hideki Hirotsuru ,  Goh Iwamoto ,  Hideo Tsukamoto ,  Satoshi Higuma ,  Nobuyuki Hashimoto

发明人： Hideki Hirotsuru ,  Goh Iwamoto ,  Hideo Tsukamoto ,  Satoshi Higuma ,  Nobuyuki Hashimoto

IPC分类号： B32B3/26

CPC分类号： H01L23/3733 ,  C04B41/009 ,  C04B41/5155 ,  C04B41/52 ,  C04B41/88 ,  C04B41/90 ,  C04B2111/00844 ,  C22C1/1036 ,  C22C29/065 ,  C22C32/0063 ,  C22C2001/1073 ,  H01L23/13 ,  H01L23/15 ,  H01L23/3731 ,  H01L23/3735 ,  H01L2924/0002 ,  Y10T428/12479 ,  Y10T428/24496 ,  Y10T428/24999 ,  C04B41/4521 ,  C04B41/4523 ,  C04B41/5096 ,  C04B41/515 ,  C04B14/4631 ,  C04B41/4541 ,  C04B41/5144 ,  C04B35/565 ,  C04B38/00 ,  H01L2924/00

摘要： A base plate for power module, comprising an aluminum-silicon carbide composite and aluminum layers made of a metal containing aluminum as the main component formed on respective principal planes of the aluminum-silicon carbide composite, wherein the aluminum-silicon carbide composite is produced by forming or fabricating a flat plate-shaped silicon carbide porous body to have a thickness difference of at most 100 μm in the entire porous body and piling such porous bodies as they are each sandwiched between mold-releasing plates so that the fastening torque in the plane direction becomes from 1 to 20 Nm, and infiltrating a metal containing aluminum as the main component into the silicon carbide porous bodies,wherein the aluminum layers each has an average thickness of from 10 to 150 μm, the difference between the maximum thickness and the minimum thickness of the aluminum layer in each principal plane is at most 80 μm, and the difference between average thicknesses of the aluminum layers on the respective principal planes is at most 50 μm, and wherein the shape of the silicon carbide porous body is rectangle or a rectangle from which peripheral portions encompassing holes are removed.

摘要翻译： 一种用于功率模块的基板，包括铝 - 碳化硅复合材料和由在铝 - 碳化硅复合材料的相应主平面上形成的以铝为主要成分的金属制成的铝层，其中铝 - 碳化硅复合材料由 在整个多孔体中形成或制造平板状碳化硅多孔体至多具有100μm的厚度差，并将这些多孔体堆叠在各自夹在脱模板之间，使得在平面中的紧固扭矩 方向为1〜20Nm，将含有铝的金属作为主要成分浸渍到碳化硅多孔体中，其中，铝层的平均厚度为10〜150μm，最大厚度与最小值之间的差 每个主平面中铝层的厚度至多为80μm，铝的平均厚度之差 各个主面上的层为50μm以下，碳化硅多孔体的形状为矩形或长方形，除去周边部分。

公开(公告)号：US20090280351A1

公开(公告)日：2009-11-12

申请号：US12095005

申请日：2006-11-13

申请人： Hideki Hirotsuru ,  Goh Iwamoto ,  Hideo Tsukamoto ,  Akira Miyai ,  Yoshio Sasaki

发明人： Hideki Hirotsuru ,  Goh Iwamoto ,  Hideo Tsukamoto ,  Akira Miyai ,  Yoshio Sasaki

IPC分类号： B32B5/18

CPC分类号： H01L23/13 ,  C04B35/565 ,  C04B35/71 ,  C04B41/009 ,  C04B41/5155 ,  C04B41/88 ,  C04B2111/00844 ,  C04B2235/3217 ,  C04B2235/3418 ,  C04B2235/402 ,  C04B2235/5436 ,  C04B2235/5472 ,  C04B2235/77 ,  C04B2235/9607 ,  C22C1/0475 ,  C22C1/051 ,  C22C29/065 ,  H01L23/15 ,  H01L23/3731 ,  H01L23/3733 ,  H01L23/3735 ,  H01L2924/0002 ,  Y10T428/12361 ,  Y10T428/12389 ,  Y10T428/12479 ,  Y10T428/12736 ,  Y10T428/12993 ,  Y10T428/2495 ,  Y10T428/24975 ,  Y10T428/249957 ,  Y10T428/249969 ,  Y10T428/249974 ,  C04B41/4521 ,  C04B41/4523 ,  C04B38/00 ,  H01L2924/00

摘要： An aluminum-silicon carbide composite suitable for a base plate for power module is provided. A base plate for power module, comprising an aluminum-silicon carbide composite that is a flat plate-shaped silicon carbide porous body impregnated with a metal containing aluminum as the main component, and an aluminum layer made of a metal containing aluminum as the main component formed only on one of the principal planes of the composite, wherein a rear surface being the other one of principal planes of the aluminum-silicon carbide composite is exposed to the outside, and the shape of the exposed aluminum-silicon carbide composite is a rectangle or a rectangle from which portions encompassing holes in the peripheral portion are removed. Plating property is imparted to the composite by providing an aluminum layer on one principal plane of the composite, and the flatness of the composite was improved by grinding its rear surface so that the aluminum-silicon carbide composite is exposed to the outside, and further, the warpage shape after the rear surface is ground is controlled by controlling the thickness of the aluminum layer.

摘要翻译： 提供一种适用于功率模块底板的铝 - 碳化硅复合材料。 一种用于功率模块的基板，包括铝 - 碳化硅复合体，其为浸有含有铝作为主要成分的金属的平板状碳化硅多孔体，以及由以铝为主要成分的金属制成的铝层 仅形成在复合材料的一个主平面上，其中作为铝 - 碳化硅复合材料的另一个主平面的后表面暴露于外部，并且暴露的铝 - 碳化硅复合材料的形状是矩形 或从外围部分中包围孔的部分移除的矩形。 通过在复合材料的一个主平面上设置铝层，赋予复合材料的电镀特性，并通过研磨其后表面改善复合材料的平整度，使得铝 - 碳化硅复合材料暴露于外部， 通过控制铝层的厚度来控制后表面被研磨后的翘曲形状。

公开(公告)号：US06447894B1

公开(公告)日：2002-09-10

申请号：US09432568

申请日：1999-11-12

申请人： Hideki Hirotsuru ,  Kenji Nomura ,  Ryuichi Terasaki ,  Mitsuaki Saito ,  Kazuyuki Hiruta ,  Akira Miyai

发明人： Hideki Hirotsuru ,  Kenji Nomura ,  Ryuichi Terasaki ,  Mitsuaki Saito ,  Kazuyuki Hiruta ,  Akira Miyai

IPC分类号： B32B326

CPC分类号： C04B41/009 ,  C04B41/5155 ,  C04B41/88 ,  C04B2111/00844 ,  C22C32/0063 ,  H01L23/3733 ,  H01L2924/0002 ,  Y10T428/12007 ,  Y10T428/249957 ,  Y10T428/249971 ,  Y10T428/249974 ,  Y10T428/24998 ,  Y10T428/249986 ,  Y10T428/249987 ,  Y10T428/24999 ,  C04B41/4521 ,  C04B41/4523 ,  C04B35/565 ,  C04B38/00 ,  H01L2924/00

摘要： A silicon carbide composite which is a flat composite comprising a porous preform of silicon carbide and a metal containing aluminum as the main component, infiltrated into the porous preform, said composite having a warpage of at most 250 &mgr;m per 10 cm of the principal plane length of the composite.

摘要翻译： 一种碳化硅复合材料，其是包含碳化硅的多孔预制件和以铝为主要成分的金属作为主要成分的平坦复合材料，其渗透到多孔预型体中，所述复合材料的翘曲最大为250mum / 10cm的主平面长度 的复合材料。

公开(公告)号：US20140339596A1

公开(公告)日：2014-11-20

申请号：US14344196

申请日：2012-09-05

申请人： Yosuke Ishihara ,  Hideki Hirotsuru ,  Hideo Tsukamoto

发明人： Yosuke Ishihara ,  Hideki Hirotsuru ,  Hideo Tsukamoto

IPC分类号： H01L33/12 ,  H01L33/00 ,  H01L33/30 ,  H01L33/48

CPC分类号： H01L33/12 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/30 ,  H01L33/48 ,  H01L33/641 ,  H01L2933/0025 ,  H01L2933/0075

摘要： Disclosed is a clad material for an LED light-emitting element holding substrate in which a plurality of layers composed of different materials are stacked and bonded via a metal layer to a III-V group semiconductor crystal surface, the linear expansion coefficient being 14×10−6/K or less and the thermal conductivity at a temperature of 25° C. being 200 W/mK or greater. The clad material is composed of three alternately stacked layers: two copper layers and a molybdenum layer, the molybdenum layer being 10 to 60 vol % and the difference in thickness between the copper layers being 5% or less; or a clad material composed of three copper layers alternately stacked with molybdenum layers to make five layers, the molybdenum layers being 20 to 70 vol % and the difference in thickness between the top and bottom two copper layers and the molybdenum layers being 5% or less.

摘要翻译： 公开了一种用于LED发光元件保持基板的包覆材料，其中由不同材料组成的多个层通过金属层堆叠并结合到III-V族半导体晶体表面，线性膨胀系数为14×10 -6 / K以下，温度25℃时的导热率为200W / mK以上。 包层材料由三个交替堆叠的层组成：两个铜层和钼层，钼层为10至60体积％，铜层之间的厚度差为5％或更小; 或由三层交替层叠钼层构成五层的包层材料，钼层为20〜70体积％，顶部和底部两个铜层和钼层之间的厚度差为5％以下 。

公开(公告)号：US08546842B2

公开(公告)日：2013-10-01

申请号：US13384479

申请日：2010-07-16

申请人： Satoshi Higuma ,  Hideki Hirotsuru ,  Shinya Narita

发明人： Satoshi Higuma ,  Hideki Hirotsuru ,  Shinya Narita

IPC分类号： H01L33/00

CPC分类号： H01L33/641 ,  H01L23/142 ,  H01L24/73 ,  H01L25/0753 ,  H01L33/647 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Provided is a highly reliable LED package with significantly improved heat radiating properties, manufacturing method of the LED package, and an LED chip assembly used in the LED package. The LED package is characterized in that the LED chip assembly (10) is bonded to a circuit board (11) created by forming metal circuitry (3) on a metal substrate (5) with an insulation layer (4) therebetween, whereas an LED chip (1) of the LED chip assembly and the metal circuitry (3) of the circuit board are connected via an electrical connection member (9), and at least the LED chip assembly and the electrical connection member are encapsulated with resin encapsulant (8) including fluorescent material.

摘要翻译： 提供了一种高度可靠的LED封装，其具有显着改善的散热性能，LED封装的制造方法以及在LED封装中使用的LED芯片组件。 LED封装的特征在于，LED芯片组件（10）被结合到通过在其间具有绝缘层（4）的金属基板（5）上形成金属电路（3）而形成的电路板（11），而LED LED芯片组件的芯片（1）和电路板的金属电路（3）经由电连接构件（9）连接，并且至少LED芯片组件和电连接构件用树脂密封剂（8 ）包括荧光材料。