摘要:
A base plate for power module, comprising an aluminum-silicon carbide composite and aluminum layers made of a metal containing aluminum as the main component formed on respective principal planes of the aluminum-silicon carbide composite, wherein the aluminum-silicon carbide composite is produced by forming or fabricating a flat plate-shaped silicon carbide porous body to have a thickness difference of at most 100 μm in the entire porous body and piling such porous bodies as they are each sandwiched between mold-releasing plates so that the fastening torque in the plane direction becomes from 1 to 20 Nm, and infiltrating a metal containing aluminum as the main component into the silicon carbide porous bodies,wherein the aluminum layers each has an average thickness of from 10 to 150 μm, the difference between the maximum thickness and the minimum thickness of the aluminum layer in each principal plane is at most 80 μm, and the difference between average thicknesses of the aluminum layers on the respective principal planes is at most 50 μm, and wherein the shape of the silicon carbide porous body is rectangle or a rectangle from which peripheral portions encompassing holes are removed.
摘要:
A base plate for power module, comprising an aluminum-silicon carbide composite and aluminum layers made of a metal containing aluminum as the main component formed on respective principal planes of the aluminum-silicon carbide composite, wherein the aluminum-silicon carbide composite is produced by forming or fabricating a flat plate-shaped silicon carbide porous body to have a thickness difference of at most 100 μm in the entire porous body and piling such porous bodies as they are each sandwiched between mold-releasing plates so that the fastening torque in the plane direction becomes from 1 to 20 Nm, and infiltrating a metal containing aluminum as the main component into the silicon carbide porous bodies,wherein the aluminum layers each has an average thickness of from 10 to 150 μm, the difference between the maximum thickness and the minimum thickness of the aluminum layer in each principal plane is at most 80 μm, and the difference between average thicknesses of the aluminum layers on the respective principal planes is at most 50 μm, and wherein the shape of the silicon carbide porous body is rectangle or a rectangle from which peripheral portions encompassing holes are removed.
摘要:
An aluminum-silicon carbide composite suitable for a base plate for power module, having an aluminum-silicon carbide composite, with a front and a rear surface plane, that is a flat plate-shaped silicon carbide porous body impregnated with a metal mainly containing aluminum, and an aluminum layer made of a metal mainly containing aluminum formed only on the front surface plane, wherein the rear surface plane of the composite is exposed to the outside, and the shape of the exposed aluminum-silicon carbide composite is rectangular, optionally having peripheral portions encompassing holes removed. Plating is imparted to the composite by providing an aluminum layer on the rear surface plane. Flatness of the composite is improved by grinding its rear surface so that the composite is exposed to the outside. Warpage after grinding the rear surface, is controlled by controlling the thickness of the aluminum layer.
摘要:
An aluminum-silicon carbide composite suitable for a base plate for power module is provided. A base plate for power module, comprising an aluminum-silicon carbide composite that is a flat plate-shaped silicon carbide porous body impregnated with a metal containing aluminum as the main component, and an aluminum layer made of a metal containing aluminum as the main component formed only on one of the principal planes of the composite, wherein a rear surface being the other one of principal planes of the aluminum-silicon carbide composite is exposed to the outside, and the shape of the exposed aluminum-silicon carbide composite is a rectangle or a rectangle from which portions encompassing holes in the peripheral portion are removed. Plating property is imparted to the composite by providing an aluminum layer on one principal plane of the composite, and the flatness of the composite was improved by grinding its rear surface so that the aluminum-silicon carbide composite is exposed to the outside, and further, the warpage shape after the rear surface is ground is controlled by controlling the thickness of the aluminum layer.
摘要:
A process for producing a substrate, which comprises processing an aluminum/graphite composite into plates having a thickness of 0.5-3 mm using a multi-wire saw under the following conditions (1) to (4): (1) the wires have abrasive grains bonded thereto which are one or more substances selected from diamond, C—BN, silicon carbide, and alumina and have an average particle diameter of 10-100 μm; (2) the wires have a diameter of 0.1-0.3 mm; (3) the wires are run at a rate of 100-700 m/min; and (4) the composite is cut at a rate of 0.1-2 mm/min. The aluminum/graphite composite has a surface roughness (Ra) of 0.1-3 μm, a thermal conductivity at 25° C. of 150-300 W/mK, a ratio of the maximum to the minimum value of thermal conductivity in three perpendicular directions of 1-1.3, a coefficient of thermal expansion at 25-150° C. of 4×106 to 7.5×10−6/K, a ratio of the maximum to the minimum value of coefficient of thermal expansion in three perpendicular directions of 1-1.3, and a three-point bending strength of 50-150 MPa.
摘要:
An aluminum/silicon carbide composite prepared by infiltrating a flat silicon carbide porous body with a metal containing aluminum as the main component, including an aluminum alloy layer made of a metal containing aluminum as the main component on both principal planes, and one principal plane is bonded to a circuit plate and the other principal plane is utilized as a radiation plane. The silicon carbide porous body is formed or machined into a convexly bowed shape, and after infiltration with the metal containing aluminum as the main component, the aluminum alloy layer on the radiation plane is further machined to form the bow shape. The aluminum/silicon carbide composite is suitable as a base plate for a ceramic circuit plate on which semiconductor components are mounted, for which high reliability is required.
摘要:
An aluminum/silicon carbide composite prepared by infiltrating a flat silicon carbide porous body with a metal containing aluminum as the main component, including an aluminum alloy layer made of a metal containing aluminum as the main component on both principal planes, and one principal plane is bonded to a circuit plate and the other principal plane is utilized as a radiation plane. The silicon carbide porous body is formed or machined into a convexly bowed shape, and after infiltration with the metal containing aluminum as the main component, the aluminum alloy layer on the radiation plane is further machined to form the bow shape. The aluminum/silicon carbide composite is suitable as a base plate for a ceramic circuit plate on which semiconductor components are mounted, for which high reliability is required.
摘要:
An aluminum-silicon carbide composite suitable as e.g. a base plate for power module is provided.An aluminum-silicon carbide composite comprising a flat plate-shaped silicon carbide porous body infiltrated with a metal containing aluminum as the main component, aluminum layers made of a material containing aluminum as the main component formed on both principal planes of the porous body, wherein the aluminum-silicon carbide composite has side faces formed by abrasive jet fabrication and the side faces do not have the aluminum layers made of a metal containing aluminum as the main component.
摘要:
Provided is a highly reliable LED package with significantly improved heat radiating properties, manufacturing method of the LED package, and an LED chip assembly used in the LED package. The LED package is characterized in that the LED chip assembly (10) is bonded to a circuit board (11) created by forming metal circuitry (3) on a metal substrate (5) with an insulation layer (4) therebetween, whereas an LED chip (1) of the LED chip assembly and the metal circuitry (3) of the circuit board are connected via an electrical connection member (9), and at least the LED chip assembly and the electrical connection member are encapsulated with resin encapsulant (8) including fluorescent material.
摘要:
Provided is a highly reliable LED package with significantly improved heat radiating properties, manufacturing method of the LED package, and an LED chip assembly used in the LED package. The LED package is characterized in that the LED chip assembly (10) is bonded to a circuit board (11) created by forming metal circuitry (3) on a metal substrate (5) with an insulation layer (4) therebetween, whereas an LED chip (1) of the LED chip assembly and the metal circuitry (3) of the circuit board are connected via an electrical connection member (9), and at least the LED chip assembly and the electrical connection member are encapsulated with resin encapsulant (8) including fluorescent material.