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    Plasma processing apparatus and method
    1.
    发明授权
    Plasma processing apparatus and method 失效
    等离子体处理装置及方法

    公开(公告)号：US5578164A

    公开(公告)日：1996-11-26

    申请号：US363270

    申请日：1994-12-23

    申请人： Yoichi Kurono ,  Shigeki Tozawa ,  Shozo Hosoda

    发明人： Yoichi Kurono ,  Shigeki Tozawa ,  Shozo Hosoda

    IPC分类号： H01J37/32 ,  B44C1/22

    CPC分类号： H01J37/32623 ,  H01J37/32633

    摘要： An apparatus for subjecting a semiconductor wafer having an uncovered marginal portion, from which a photoresist film is removed, to an anisotropic etching. The apparatus comprises a process chamber which can be set to a vacuum. Upper and lower electrodes opposite to each other are provided in the process chamber. An etching gas is made into plasma between these electrodes. An electrostatic chuck is arranged on the lower electrode. A wafer is mounted on the electrostatic chuck. A ring made of dielectric material, movable upward and downward, is arranged between the electrodes. A central portion of the ring is formed as a hood having a recessed shape corresponding to the marginal portion of the wafer. During the etching, the hood covers the marginal portion of the wafer under a plasma sheath, so as to be out of contact with the wafer, thereby preventing the marginal portion of the wafer from being etched.

    摘要翻译： 一种用于对具有未被覆盖的边缘部分的半导体晶片（其中除去光致抗蚀剂膜）进行各向异性蚀刻的设备。 该装置包括可设置为真空的处理室。 在处理室中设置彼此相对的上下电极。 蚀刻气体在这些电极之间被制成等离子体。 下电极上设有静电吸盘。 将晶片安装在静电卡盘上。 由电介质材料制成的可上下移动的环设置在电极之间。 环的中心部分形成为具有对应于晶片的边缘部分的凹形的罩。 在蚀刻期间，罩覆盖等离子体护套下的晶片的边缘部分，以便与晶片脱离接触，从而防止晶片的边缘部分被蚀刻。

    Vacuum processing system and method of making
    2.
    发明申请
    Vacuum processing system and method of making 审中-公开
    真空处理系统及制作方法

    公开(公告)号：US20070218197A1

    公开(公告)日：2007-09-20

    申请号：US11376724

    申请日：2006-03-15

    申请人： Yoichi Kurono

    发明人： Yoichi Kurono

    IPC分类号： B05D7/22 ,  B05D1/36 ,  C23C16/00

    CPC分类号： B22D25/00 ,  H01J37/32458 ,  H01J2237/20

    摘要： A vacuum processing system configured for etch and deposition applications is described. The vacuum processing chamber comprises a monolithic, metal cast chamber having a substrate support pedestal positioned within the chamber by a plurality of pedestal support arms acting as utility conduits for the support pedestal.

    摘要翻译： 描述了配置用于蚀刻和沉积应用的真空处理系统。 真空处理室包括一个整体的金属铸造室，其具有位于腔室内的基板支撑台座，多个基座支撑臂用作支撑基座的实用导管。

    Plasma processing apparatus comprising means for generating rotating magnetic field
    3.
    发明授权
    Plasma processing apparatus comprising means for generating rotating magnetic field 失效
    一种等离子体处理装置，包括用于产生旋转磁场的装置

    公开(公告)号：US5440206A

    公开(公告)日：1995-08-08

    申请号：US81023

    申请日：1993-06-22

    申请人： Yoichi Kurono ,  Masami Kubota ,  Hiroyuki Yoshiki ,  Michio Taniguchi

    发明人： Yoichi Kurono ,  Masami Kubota ,  Hiroyuki Yoshiki ,  Michio Taniguchi

    IPC分类号： H01J37/32 ,  H01J7/24

    CPC分类号： H01J37/32623 ,  H01J37/3266

    摘要： In a plasma processing s including a processing chamber and plate-parallel electrodes, provided in the processing chamber, for generating a high-frequency electric field in response to a high-frequency voltage, a ring-shaped core is provided in the periphery of the processing chamber, and a toroidal coil includes a plurality of 2n split coils wound in all the periphery of the ring-shaped core so that each pair of split coils oppose to each other. An alternating-current power source for generating a plurality of n-phase alternating-current currents including a plurality of n currents having a phase difference of either .pi./n or 2.pi./n therebetween, is electrically connected with the plurality of split coils of the toroidal coil so that two magnetic fields generated by the each pair of split coils opposing to each other are directed in the same direction in parallel to each other in the processing chamber, and the plurality of currents are respectively flowed into the respective pairs of split coils opposing to each other, thereby generating a rotating magnetic field in parallel to surfaces of the plane-parallel electrodes.

    摘要翻译： 在包括处理室和平板电极的等离子体处理中，设置在处理室中，用于响应于高频电压产生高频电场，环形芯设置在 处理室和环形线圈包括缠绕在环形芯的所有周边中的多个2n个分离线圈，使得每对分裂线圈彼此相对。 一种用于产生多个n相交流电流的交流电源，该多个n相交流电流包括多个n电流，其间具有π/ n或2π/ n之间的相位差，并与多个分离线圈 环形线圈使得由对置的每对分裂线圈产生的两个磁场在处理室中彼此平行地指向相同的方向，并且多个电流分别流入相应的分离对 线圈彼此相对，由此产生与平面平行电极的表面平行的旋转磁场。

    Vertical type processing apparatus
    4.
    发明授权
    Vertical type processing apparatus 失效
    立式加工设备

    公开(公告)号：US5217560A

    公开(公告)日：1993-06-08

    申请号：US835754

    申请日：1992-02-13

    申请人： Yoichi Kurono ,  Shigeru Handa

    发明人： Yoichi Kurono ,  Shigeru Handa

    IPC分类号： H01L21/30 ,  H01J37/32 ,  H01L21/00 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

    CPC分类号： H01J37/3244 ,  H01L21/67069 ,  H01L21/67109 ,  H01J2237/3342 ,  Y10S156/912

    摘要： An ashing apparatus of the vertical type comprises a reaction tube erected in the vertical direction to house therein a plurality of semiconductor wafers, an inner tube arranged in the reaction tube to enclose the semiconductor wafers and having a plurality of holes through which activated radicals in plasma can be selectively passed, a reaction gas supply pipe for supplying reaction gases into a space between the reaction tube and the inner tube, and plasma generating electrode unit located outside the reactor tube to generate plasma of the reaction gases only in the space between the reaction tube and the inner tube.

    摘要翻译： 垂直型的灰化装置包括在垂直方向上竖立的反应管，以容纳多个半导体晶片，内管布置在反应管中以包围半导体晶片并具有多个孔，等离子体中的激活自由基 可以选择性地通过用于将反应气体供应到反应管和内管之间的空间的反应气体供应管，以及位于反应器管外部的等离子体产生电极单元，仅在反应器之间的空间中产生反应气体的等离子体 管和内管。

    Plasma processing apparatus
    6.
    发明授权
    Plasma processing apparatus 失效
    等离子体处理装置

    公开(公告)号：US5779803A

    公开(公告)日：1998-07-14

    申请号：US696224

    申请日：1996-08-13

    申请人： Yoichi Kurono ,  Shigeki Tozawa ,  Shozo Hosoda

    发明人： Yoichi Kurono ,  Shigeki Tozawa ,  Shozo Hosoda

    IPC分类号： H01J37/32 ,  C23C16/00

    CPC分类号： H01J37/32623 ,  H01J37/32633

    摘要： An apparatus for subjecting a semiconductor wafer having an uncovered marginal portion, from which a photoresist film is removed, to an anisotropic etching. The apparatus comprises a process chamber which can be set to a vacuum. Upper and lower electrodes opposite to each other are provided in the process chamber. An etching gas is made into plasma between these electrodes. An electrostatic chuck is arranged on the lower electrode. A wafer is mounted on the electrostatic chuck. A ring made of dielectric material, movable upward and downward, is arranged between the electrodes. A central portion of the ring is formed as a hood having a recessed shape corresponding to the marginal portion of the wafer. During the etching, the hood covers the marginal portion of the wafer under a plasma sheath, so as to be out of contact with the wafer, thereby preventing the marginal portion of the wafer from being etched.

    摘要翻译： 一种用于对具有未被覆盖的边缘部分的半导体晶片（其中除去光致抗蚀剂膜）进行各向异性蚀刻的设备。 该装置包括可设置为真空的处理室。 在处理室中设置彼此相对的上下电极。 蚀刻气体在这些电极之间被制成等离子体。 下电极上设有静电吸盘。 将晶片安装在静电卡盘上。 由电介质材料制成的可上下移动的环设置在电极之间。 环的中心部分形成为具有对应于晶片的边缘部分的凹形的罩。 在蚀刻期间，罩覆盖等离子体护套下的晶片的边缘部分，以便与晶片脱离接触，从而防止晶片的边缘部分被蚀刻。