公开(公告)号：US5030056A

公开(公告)日：1991-07-09

申请号：US555645

申请日：1990-07-23

申请人： Hirofumi Kitayama ,  Mitsuo Kato ,  Eiichiro Takanabe ,  Masaru Kobayashi

发明人： Hirofumi Kitayama ,  Mitsuo Kato ,  Eiichiro Takanabe ,  Masaru Kobayashi

IPC分类号： H01L21/677 ,  B65G49/07 ,  H01L21/687

CPC分类号： H01L21/68707 ,  Y10S414/135

摘要： A substrate transfer device containing an arm support member for supporting plural substrate support arms at one ends thereof, said arms having substrate housing areas at the other ends thereof, a structure arranged on a base to freely move in the longitudinal direction of the substrate support arms while holding the arm support member, another arm support member for holding a substrate support arm at the other side of the first arm support member, a structure arranged on the base to freely move in the longitudinal direction of the one substrate support arm while holding the arm support member for one substrate, a structure for moving the base up and down, and a structure for moving the base in a direction perpendicular to the substrate support arms on a plane parallel to the plane in which the substrate support arms are included.

摘要翻译： 一种基板传送装置，包括用于在其一端处支撑多个基板支撑臂的臂支撑构件，所述臂在其另一端处具有基板容纳区域，布置在基部上以在基板支撑臂的纵向方向上自由移动的结构 同时保持臂支撑构件，另一个臂支撑构件用于将基板支撑臂保持在第一臂支撑构件的另一侧，布置在基座上以在保持第一臂支撑构件的一个基板支撑臂的纵向方向上自由移动的结构 用于一个基板的支撑构件，用于上下移动基座的结构，以及用于在垂直于基板支撑臂的方向上平行于包括基板支撑臂的平面的平面移动基座的结构。

公开(公告)号：USD378823S

公开(公告)日：1997-04-15

申请号：US47277

申请日：1995-11-30

申请人： Shingo Watanabe ,  Hirofumi Kitayama

设计人： Shingo Watanabe ,  Hirofumi Kitayama

公开(公告)号：US4989540A

公开(公告)日：1991-02-05

申请号：US392597

申请日：1989-08-11

申请人： Noboru Fuse ,  Hirofumi Kitayama

发明人： Noboru Fuse ,  Hirofumi Kitayama

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/205 ,  H01L21/22 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/31

CPC分类号： C23C16/455 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/45578 ,  C23C16/4558 ,  H01J37/3244 ,  Y10S156/912 ,  Y10S156/916 ,  Y10S438/935

摘要： A treatment apparatus used in manufacturing processes for semiconductor devices and the like, in which substrates are treated by means of a reaction gas. An inner tube, which is coaxially disposed in a reaction tube, defines a reaction region surrounding the substrates to be treated. The inner tube has a number of perforations in its wall, by means of which the inside and outside of the reaction region communicate with each other. During reaction treatment, the reaction gas is supplied to the reaction region, while a cleaning gas is supplied to the region outside the reaction region. Both these gases are discharged through a common exhaust pipe. The flows of the reaction gas and the cleaning gas are controlled so that the pressure inside the reaction region is higher than the pressure outside the region. As the cleaning gas is supplied, production and adhesion of reaction compound particles on the inner surface of the reaction tube is prevented.

摘要翻译： 在半导体器件等的制造工艺中使用的处理装置，其中基板通过反应气体进行处理。 同轴地设置在反应管中的内管限定围绕待处理基板的反应区域。 内管在其壁上具有多个穿孔，通过该穿孔，反应区域的内部和外部彼此连通。 在反应处理期间，将反应气体供给到反应区域，同时向反应区域外的区域供给清洁气体。 这两种气体都通过一个普通的排气管排出。 控制反应气体和清洁气体的流动，使得反应区域内的压力高于区域外的压力。 当提供清洁气体时，防止反应混合物颗粒在反应管的内表面上的生成和粘附。

公开(公告)号：US6095806A

公开(公告)日：2000-08-01

申请号：US337402

申请日：1999-06-22

申请人： Shizuo Suzuki ,  Hisashi Kitamiya ,  Hirofumi Kitayama

发明人： Shizuo Suzuki ,  Hisashi Kitamiya ,  Hirofumi Kitayama

IPC分类号： H01L21/683 ,  C23C16/458 ,  C30B25/12 ,  C30B31/14 ,  H01L21/22 ,  H01L21/68 ,  F27D5/00

CPC分类号： C30B25/12 ,  C23C16/4583 ,  C30B31/14 ,  Y10S414/138

摘要： A boat for semiconductor wafers includes first, second and third support rods arranged between and connected to top and bottom plates. The first, second and third support rods include a plurality of first racks, a plurality of second racks, and a plurality of third racks, respectively, such that the racks of each rods are vertically arrayed with gaps therebetween. The first, second and third racks serving to define a plurality of horizontal wafer supporting levels. Each wafer supporting level is defined by only combination of the first, second and third racks of the corresponding height. In each wafer supporting level, the first and second racks are arranged substantially in symmetry with respect to an axis passing through the center of a wafer transfer port, and the third rack is arranged deviant from the axis by a certain distance corresponding to 5% to 48% of the diameter of the wafer.

摘要翻译： 用于半导体晶片的船包括布置在顶板和底板之间并连接到顶板和底板的第一，第二和第三支撑杆。 第一，第二和第三支撑杆分别包括多个第一机架，多个第二机架和多个第三机架，使得每个杆的齿条在其间具有间隙而垂直排列。 第一，第二和第三机架用于限定多个水平晶片支撑水平。 每个晶片支撑水平仅由对应高度的第一，第二和第三机架的组合限定。 在每个晶片支撑水平中，第一和第二机架相对于通过晶片传送端口的中心的轴线基本上对称布置，并且第三机架布置在与轴线偏离一定距离，对应于5％至 晶圆直径的48％。

公开(公告)号：US5445521A

公开(公告)日：1995-08-29

申请号：US250379

申请日：1994-05-27

申请人： Eiji Yamaguchi ,  Kaoru Fujihara ,  Takenobu Matsuo ,  Hirofumi Kitayama

发明人： Eiji Yamaguchi ,  Kaoru Fujihara ,  Takenobu Matsuo ,  Hirofumi Kitayama

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  C30B25/14 ,  F27D19/00 ,  F27D5/00

CPC分类号： C23C16/45557 ,  C23C16/4401 ,  C23C16/52 ,  C30B25/14 ,  F27D19/00 ,  F27D2019/0009 ,  F27D2019/0068

摘要： A heat treating device including a pressure detecting unit for outputting an output signal when a pressure in a heat processing furnace becomes a set value, an air release pipe having a first valve and a check valve, a differential pressure gauge shut off by a second valve in terms of pressure from the interior of the heat processing furnace, and an air feed pipe having a third valve. One ends of each of the air release pipe and the air feed pipe is connected respectively to the heat processing furnace and the other ends opened in air. In such arrangement, after processing gases are evacuated from the heat processing furnace, an inert gas is fed. Then when an internal pressure of the furnace becomes near an air pressure, the first valve is opened in response to the output signal of the pressure detecting unit to make the internal pressure of the heat processing furnace a little higher than the air pressure. When a differential pressure value of the differential pressure gauge is below a set value, the third value is opened to communicate the interior of the heat processing furnace with air through the air feed pipe. Then the cap closing the opening of the heat processing furnace is opened.

摘要翻译： 一种热处理装置，包括：当热处理炉中的压力变为设定值时输出输出信号的压力检测单元;具有第一阀和止回阀的排气管，由第二阀关闭的差压表 在来自热处理炉的内部的压力和具有第三阀的进气管。 每个排气管和供气管的一端分别连接到热处理炉，另一端在空气中敞开。 在这样的布置中，在处理气体从热处理炉抽出之后，供给惰性气体。 然后，当炉子的内部压力接近空气压力时，响应于压力检测单元的输出信号打开第一阀门，使得热处理炉的内部压力比空气压力高一点。 当差压表的差压值低于设定值时，打开第三值，以使热处理炉的内部通过供气管与空气相通。 然后关闭热处理炉的开口的盖子打开。

公开(公告)号：US5162047A

公开(公告)日：1992-11-10

申请号：US789820

申请日：1991-11-12

申请人： Atsushi Wada ,  Hirofumi Kitayama

发明人： Atsushi Wada ,  Hirofumi Kitayama

IPC分类号： H01L21/677 ,  H01L21/687

CPC分类号： H01L21/68707 ,  H01L21/67778 ,  Y10S414/137 ,  Y10T29/41

摘要： According to this invention, a method of transferring a plurality of semiconductor wafers between a carrier and a support ring type boat comprises the steps of picking up the semiconductor wafer from the carrier on a station by an arm in a substantially horizontal state, positioning the wafer supported by the arm above a support ring of the boat, positioning a receiver below the support ring, moving the receiver upward to a position where a pin of the receiver reaches the arm through an opening of the support ring, lifting the wafer from the arm by the pin, moving the arm backward from the boat, moving the receiver downward to a position where the wafer is transferred from the receiver to the support ring, and then loading the boat into a heat treatment furnace.

摘要翻译： 根据本发明，在载体和支撑环型舟皿之间转移多个半导体晶片的方法包括以下步骤：通过臂以基本水平的状态从站上的载体上拾取半导体晶片，将晶片定位 在支撑环的支撑环上方由支撑环支撑，将接收器放置在支撑环下方，将接收器向上移动到接收器的针通过支撑环的开口到达臂的位置，将晶片从臂提起 通过销将手臂从船上向后移动，将接收器向下移动到晶片从接收器转移到支撑环的位置，然后将船装载到热处理炉中。

公开(公告)号：US06210482B1

公开(公告)日：2001-04-03

申请号：US09296136

申请日：1999-04-22

申请人： Hirofumi Kitayama ,  Yoichi Kurono ,  Nobukazu Ikeda ,  Naoya Masuda

发明人： Hirofumi Kitayama ,  Yoichi Kurono ,  Nobukazu Ikeda ,  Naoya Masuda

IPC分类号： C23C1600

CPC分类号： H01L21/67017 ,  C23C16/44 ,  C23C16/455 ,  C23C16/45561 ,  F17D1/04 ,  G05D7/0641 ,  Y10T137/0318 ,  Y10T137/0352 ,  Y10T137/86389 ,  Y10T137/87314 ,  Y10T137/87676 ,  Y10T137/87692

摘要： An apparatus for feeding gases for use in semiconductor manufacturing reduced in size and manufacturing costs and facilitating maintenance and operation of the gas supply system. The apparatus comprises a plurality of gas supply sources, gas source valves provided on the gas lead-out pipes from the respective gas supply sources, flow rate controllers provided on main gas feed pipes into which the lead-out pipes converge, and gas supply valves provided on the outlet side of the flow rate controllers.

摘要翻译： 用于半导体制造中供给气体的装置减小了尺寸和制造成本，并促进了供气系统的维护和运行。 该装置包括多个气体供给源，从各个气体供给源设置在气体导出管上的气体源，设置在引出管汇接的主要供气管上的流量控制器，以及气体供给阀 设置在流量控制器的出口侧。

公开(公告)号：US5622639A

公开(公告)日：1997-04-22

申请号：US280855

申请日：1994-07-26

申请人： Hirofumi Kitayama ,  Toshimitu Shibata ,  Toshiaki Miyaju ,  Katsushin Miyagi

发明人： Hirofumi Kitayama ,  Toshimitu Shibata ,  Toshiaki Miyaju ,  Katsushin Miyagi

IPC分类号： C23C16/46 ,  C30B31/12 ,  F27B5/14

CPC分类号： C30B31/12 ,  C23C16/46

摘要： A heat treating apparatus for mounting objects to be treated on an object-to-be-treated boat (wafer boat) provided on a heat insulating cylinder, and loading the object-to-be-treated boat into a processing vessel for a heat treatment, a temperature detecting sensor is provided in a film depositing area of a relatively large heat capacity, which is a lower part of a gap defined between an inner tube of the processing vessel and an outer tube thereof so as to detect temperatures of those of the objects to be treated located there and control temperatures of the heating unit. Thus heat response is improved, and temperatures of the objects to be treated can be accurately detected.

摘要翻译： 一种用于将被处理物体安装在设置在隔热圆筒上的被处理船舶（晶片舟皿）上并将待处理船舶装载到热处理处理容器中的热处理装置 温度检测传感器设置在比较大的热容量的薄膜沉积区域中，该薄膜沉积区域是在处理容器的内管和外管之间限定的间隙的下部，以便检测其中的温度 要处理的物体位于那里，并控制加热单元的温度。 因此，热响应得到改善，并且可以准确地检测被处理物体的温度。

公开(公告)号：US5445486A

公开(公告)日：1995-08-29

申请号：US263216

申请日：1994-06-17

申请人： Hirofumi Kitayama ,  Hiroyuki Iwai ,  Shinichi Wada ,  Tetsu Oosawa

发明人： Hirofumi Kitayama ,  Hiroyuki Iwai ,  Shinichi Wada ,  Tetsu Oosawa

IPC分类号： B65G49/07 ,  H01L21/677 ,  H01L21/687 ,  B65G65/00

CPC分类号： H01L21/68707 ,  H01L21/67781 ,  Y10S414/137

摘要： According to the invention, there is provided a substrate transferring apparatus for transferring substrates from a substrate transport container containing a plurality of substrates to be treated to a substrate holder for holding a plurality of substrates to be treated or vice versa, the apparatus including arms for supporting substrate, a supporting member for supporting the arms, and a drive arrangement for driving the supporting member to operate. Each of the arms include a plate shaped arm main body having a connecting section for connecting the arm to the drive arrangement, supporting sections having a thickness greater than that of the arm main body for supporting corresponding peripheral areas of the substrate, and stoppers having a thickness greater than that of the supporting sections for abutting lateral sides of the substrate to rigidly hold the substrate.

摘要翻译： 根据本发明，提供了一种用于将衬底从含有待处理的多个衬底的衬底输送容器转移到用于保持多个待处理衬底或反之亦然的衬底保持器的衬底转移装置，该装置包括用于 支撑基板，用于支撑臂的支撑构件，以及用于驱动支撑构件进行操作的驱动装置。 每个臂包括板形臂主体，其具有用于将臂连接到驱动装置的连接部分，其具有大于臂主体的厚度的支撑部分，用于支撑基板的相应周边区域，并且具有 厚度大于用于邻接基板的侧面的支撑部分的厚度以刚性地保持基板。

公开(公告)号：US07235137B2

公开(公告)日：2007-06-26

申请号：US10466116

申请日：2001-12-10

申请人： Hirofumi Kitayama ,  Noriaki Matsushima

发明人： Hirofumi Kitayama ,  Noriaki Matsushima

IPC分类号： H01L21/302 ,  C23C16/00

CPC分类号： H01L21/67109 ,  C30B31/14 ,  C30B31/16

摘要： A single-substrate processing apparatus (20) has a worktable (40) disposed in a process chamber (24), which accommodates a target substrate (W). The worktable (40) has a thermally conductive mount surface (41) to place the target substrate (W) thereon. The worktable (40) is provided with a flow passage (50) formed therein, in which a thermal medium flows for adjusting temperature of the target substrate (W) through the mount surface (41). The flow passage (50) is connected to a thermal medium supply system (54), which selectively supplies a cooling medium and a heating medium.

摘要翻译： 单基板处理装置（20）具有设置在容纳目标基板（W）的处理室（24）中的工作台（40）。 工作台（40）具有用于将目标衬底（W）放置在其上的导热安装表面（41）。 工作台（40）具有形成在其中的流路（50），其中热介质流过用于通过安装表面（41）调节目标基板（W）的温度。 流路（50）连接到热介质供给系统（54），该系统选择性地供应冷却介质和加热介质。