摘要:
The present invention relates to a connecting structure between semiconductor device 1 of a BGA type which has external electrode terminals 9 including column-like electrode 17, insulating layer 16 formed around the column-like electrode 17 and annular electrode 15 formed around the insulating layer 16, and a printed wiring board capable of mounting the semiconductor device 1 and including lower-layer electrode 28 to be soldered to column-like electrode 17 of the aforementioned external electrode terminal 9 and upper-layer electrode 27 to be soldered to annular electrode 15 of the aforementioned external electrode terminal 9. Column-like electrode 17 of semiconductor device 1 is soldered to lower-layer electrode 28 of printed wiring board 2. Annular electrode 15 of semiconductor device 1 is soldered to upper-layer electrode 27 of printed wiring board 2.
摘要:
A process for producing silica glass fibers comprising:a step of preparing a silica glass fiber spinning solution by adding a polymerization regulator to a silica sol solution obtained by the hydrolysis and condensation of a silicon alkoxide in the presence of an acid catalyst;a step of spinning the spinning solution into gel fibers by extruding the spinning solution from nozzles;a step of applying an oiling agent containing substantially no water or lower alcohol to the gel fibers;a step of forming a fiber cake by winding the oiled gel fibers on a tube or bobbin;a step of aging the gel fibers constituting the fiber cake;a step of sintering the gel fibers unwound from the fiber cake after the aging step, to form silica glass fibers.
摘要:
A glass composition which possesses a chemical resistance. The glass composition consists essentially ofSiO.sub.2 : 45 - 65 wt.%ZrO.sub.2 : 10 - 20 wt.%Cr.sub.2 O.sub.3 : 0 - 5 wt.%SnO.sub.2 : 0 - 5 wt.%Ro: 0 - 18 wt.%R'.sub.2 o: 0 - 18 wt.%So.sub.3 : 0.05 - 1 wt.%Wherein the sum of contents of Cr.sub.2 O.sub.3 + SnO.sub.2 is 0.5 - 10 wt.%; the sum of contents of ZrO.sub.2 + SnO.sub.2 + Cr.sub.2 O.sub.3 is 12 - 25 wt.%; RO is selected from the group consisting of CaO, MgO, ZnO, BaO, and SrO; and R'.sub.2 O is selected from the group consisting of K.sub.2 O of 0 - 5 wt.%, Na.sub.2 O of 0 - 18 wt.% and Li.sub.2 O of 0 - 5 wt.%.
摘要:
The present invention relates to a connecting structure between semiconductor device 1 of a BGA type which has external electrode terminals 9 including column-like electrode 17, insulating layer 16 formed around the column-like electrode 17 and annular electrode 15 formed around the insulating layer 16, and a printed wiring board capable of mounting the semiconductor device 1 and including lower-layer electrode 28 to be soldered to column-like electrode 17 of the aforementioned external electrode terminal 9 and upper-layer electrode 27 to be soldered to annular electrode 15 of the aforementioned external electrode terminal 9. Column-like electrode 17 of semiconductor device 1 is soldered to lower-layer electrode 28 of printed wiring board 2. Annular electrode 15 of semiconductor device 1 is soldered to upper-layer electrode 27 of printed wiring board 2.