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    Method and apparatus for determining an etch property using an endpoint signal
    1.
    发明申请
    Method and apparatus for determining an etch property using an endpoint signal 有权
    使用端点信号确定蚀刻性质的方法和装置

    公开(公告)号：US20060048891A1

    公开(公告)日：2006-03-09

    申请号：US10531469

    申请日：2003-10-31

    Applicant: Hongyu Yue ,  Hieu Lam

    Inventor： Hongyu Yue ,  Hieu Lam

    IPC: C23F1/00 ,  G01L21/30

    CPC classification number: H01J37/32935 ,  H01J37/32963

    Abstract: The present invention presents a plasma processing system for etching a layer on a substrate comprising a process chamber, a diagnostic system coupled to the process chamber and configured to measure at least one endpoint signal, and a controller coupled to the diagnostic system and configured to determine in-situ at least one of an etch rate and an etch rate uniformity of the etching from the endpoint signal. Furthermore, an in-situ method of determining an etch property for etching a layer on a substrate in a plasma processing system is presented comprising the steps: providing a thickness of the layer; etching the layer on the substrate; measuring at least one endpoint signal using a diagnostic system coupled to the plasma processing system, wherein the endpoint signal comprises an endpoint transition; and determining the etch rate from a ratio of the thickness to a difference between a time during the endpoint transition and a starting time of the etching.

    Abstract translation: 本发明提出了一种用于蚀刻衬底上的层的等离子体处理系统，包括处理室，耦合到处理室并被配置为测量至少一个端点信号的诊断系统，以及耦合到诊断系统的控制器，并且被配置为确定 从端点信号原位蚀刻速率和蚀刻速度均匀性中的至少一个。 此外，提出了确定用于蚀刻等离子体处理系统中的衬底上的层的蚀刻性质的原位方法，包括以下步骤：提供该层的厚度; 蚀刻衬底上的层; 使用耦合到所述等离子体处理系统的诊断系统来测量至少一个端点信号，其中所述端点信号包括端点转换; 以及从所述厚度与所述端点转变期间的时间与所述蚀刻的开始时间之间的差的比率确定所述蚀刻速率。

    Method and apparatus for using a pressure control system to monitor a plasma processing system
    3.
    发明申请
    Method and apparatus for using a pressure control system to monitor a plasma processing system 有权
    用于使用压力控制系统监测等离子体处理系统的方法和装置

    公开(公告)号：US20050283321A1

    公开(公告)日：2005-12-22

    申请号：US10868346

    申请日：2004-06-16

    Applicant: Hongyu Yue ,  Hieu Lam

    Inventor： Hongyu Yue ,  Hieu Lam

    IPC: H01J37/32 ,  G01N31/00 ,  G06F19/00

    CPC classification number: H01J37/32623 ,  H01J37/32935

    Abstract: A method and apparatus is presented for using a pressure control system to monitor a plasma processing system. By monitoring variations in the state of the pressure control system, a fault condition, an erroneous fault condition, or a service condition can be detected. For example, the service condition can include monitoring the accumulation of residue between successive preventative maintenance events.

    Abstract translation: 提出了一种使用压力控制系统监测等离子体处理系统的方法和装置。 通过监视压力控制系统的状态的变化，可以检测故障状况，错误故障状况或服务条件。 例如，服务条件可以包括在连续的预防性维护事件之间监视残留物的累积。

    Method and system for predicting process performance using material processing tool and sensor data
    4.
    发明申请
    Method and system for predicting process performance using material processing tool and sensor data 审中-公开
    使用材料加工工具和传感器数据预测工艺性能的方法和系统

    公开(公告)号：US20050252884A1

    公开(公告)日：2005-11-17

    申请号：US10517762

    申请日：2003-06-27

    Applicant: Hieu Lam ,  Hongyu Yue ,  John Shriner

    Inventor： Hieu Lam ,  Hongyu Yue ,  John Shriner

    IPC: H01L21/3065 ,  C23F1/00 ,  G05B19/418 ,  G05B23/02 ,  H01L21/66

    CPC classification number: H01L22/20 ,  G05B19/41875 ,  G05B23/0254 ,  G05B2219/31357 ,  G05B2219/32179 ,  G05B2219/32194 ,  G05B2219/45028 ,  G05B2219/45031 ,  H01J37/32935 ,  Y02P90/14 ,  Y02P90/22

    Abstract: A material processing system including a process tool and a process performance prediction system. The performance prediction system includes sensors coupled to the tool to measure tool data and a controller coupled to the sensors to receive tool data, where the controller is configured to predict the process performance for the tool using the tool data. A method for detecting a fault in a material processing system using a process performance prediction model is also provided. The method includes preparing the tool, initiating a process in the tool, and recording tool data to form to a tool data matrix. The method also includes performing a matrix multiplication of the tool data matrix and a correlation matrix to form predicted process performance data, where the correlation matrix includes the performance prediction model, comparing the predicted data with target data, and determining a fault condition of the processing system from the comparing step.

    Abstract translation: 一种材料处理系统，包括处理工具和过程性能预测系统。 性能预测系统包括耦合到工具以测量工具数据的传感器和耦合到传感器以接收工具数据的控制器，其中控制器被配置为使用工具数据预测工具的过程性能。 还提供了使用过程性能预测模型来检测材料处理系统中的故障的方法。 该方法包括准备工具，启动工具中的过程，以及记录工具数据以形成工具数据矩阵。 该方法还包括执行刀具数据矩阵和相关矩阵的矩阵乘法以形成预测过程性能数据，其中相关矩阵包括性能预测模型，将预测数据与目标数据进行比较，以及确定处理的故障状况 系统从比较步骤。

    Method and system of discriminating substrate type
    5.
    发明申请
    Method and system of discriminating substrate type 有权
    识别基板类型的方法和系统

    公开(公告)号：US20050211669A1

    公开(公告)日：2005-09-29

    申请号：US10809474

    申请日：2004-03-26

    Applicant: Hieu Lam ,  Hongyu Yue

    Inventor： Hieu Lam ,  Hongyu Yue

    IPC: G01L21/30 ,  G01N21/68

    CPC classification number: G01N21/68

    Abstract: A method and system for determining a substrate type during a seasoning process is presented. An optical signal is acquired from a process in a plasma processing system, and the optical signal is compared to a pre-determined threshold value. Depending upon the comparison, the substrate type is determined to be of a correct type, or an incorrect type.

    Abstract translation: 提出了一种在调味过程中确定底物类型的方法和系统。 从等离子体处理系统中的处理获取光信号，将光信号与预定阈值进行比较。 根据比较，基板类型被确​​定为正确的类型或不正确的类型。

    Controlling a material processing tool and performance data
    6.
    发明申请
    Controlling a material processing tool and performance data 有权
    控制材料加工工具和性能数据

    公开(公告)号：US20050234574A1

    公开(公告)日：2005-10-20

    申请号：US10512863

    申请日：2003-06-27

    Applicant: Hieu Lam ,  Hongyu Yue

    Inventor： Hieu Lam ,  Hongyu Yue

    IPC: H01L21/3065 ,  G05B19/418 ,  G06F19/00 ,  H01L21/205

    CPC classification number: G05B19/41865 ,  G05B2219/31443 ,  G05B2219/32366 ,  G05B2219/45031 ,  Y02P90/20 ,  Y02P90/26

    Abstract: According to an embodiment of the present invention, a material processing systeme (1) including a process tool (10) and a process performance control system (100). The process performance control system (100) includes a process performance controller (55) coupled to the process tool (10), where the process performance controller (55) includes a process performance prediction model (110), a process recipe correction filter (120), a process controller (130), and process performance model correction algorithm (150). The process performance prediction model (110) is configured to receive tool data from a plurality of sensors coupled to process tool (10) and to predict process performance data. The process recipe correction filter (120) is coupled to the process performance prediction model (110) and configured to receive predicted process performance data and generate a process recipe correction for run-to-run process control. The process controller (130) is coupled to the process recipe correction filter (120) and is configured to update a process recipe according to the process recipe correction.

    Abstract translation: 根据本发明的实施例，一种包括处理工具（10）和过程执行控制系统（100）的材料处理系统（1）。 过程性能控制系统（100）包括耦合到处理工具（10）的过程性能控制器（55），其中过程性能控制器（55）包括过程性能预测模型（110），过程配方校正过滤器（120） ），过程控制器（130）和过程执行模型校正算法（150）。 过程性能预测模型（110）被配置为从耦合到过程工具（10）的多个传感器接收工具数据并预测过程性能数据。 过程配方校正滤波器（120）耦合到过程性能预测模型（110）并且被配置为接收预测的过程性能数据并且生成用于运行过程控制的过程配方校正。 过程控制器（130）耦合到过程配方校正过滤器（120），并被配置为根据处理配方校正更新过程配方。

    Method and apparatus for endpoint detection using partial least squares
    8.
    发明申请
    Method and apparatus for endpoint detection using partial least squares 有权
    使用偏最小二乘法进行端点检测的方法和装置

    公开(公告)号：US20050016947A1

    公开(公告)日：2005-01-27

    申请号：US10472436

    申请日：2002-03-25

    Applicant: David Fatke ,  Hongyu Yue

    Inventor： David Fatke ,  Hongyu Yue

    IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/66 ,  C23F1/00

    CPC classification number: H01L22/20 ,  H01J37/32935 ,  H01J37/32963 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An apparatus and method for detection of a feature etch completion within an etching reactor. The method includes determining a correlation matrix by recording first measured data regarding a first etch process over successive time intervals to form a first recorded data matrix, assembling a first endpoint signal matrix using target endpoint data for a specific etch process, performing a partial least squares analysis on the recorded data matrix and the first endpoint signal matrix to refine the recorded data matrix, and computing a correlation matrix based upon the refined recorded data matrix and the first endpoint signal matrix. The method further includes performing a second etch process to form a second recorded data matrix. The correlation matrix and the second recorded data matrix are analyzed to determine whether an endpoint of the second etch process has been achieved.

    Abstract translation: 用于检测蚀刻反应器内的特征蚀刻完成的装置和方法。 该方法包括通过在连续时间间隔上记录关于第一蚀刻处理的第一测量数据来形成相关矩阵以形成第一记录数据矩阵，使用用于特定蚀刻工艺的目标端点数据组装第一端点信号矩阵，执行偏最小二乘法 对所记录的数据矩阵和第一端点信号矩阵进行分析以细化记录的数据矩阵，以及基于精细记录的数据矩阵和第一端点信号矩阵来计算相关矩阵。 该方法还包括执行第二蚀刻工艺以形成第二记录数据矩阵。 分析相关矩阵和第二记录数据矩阵以确定是否已经实现了第二蚀刻工艺的端点。

    Method and apparatus for determining an etch property using an endpoint signal
    10.
    发明授权
    Method and apparatus for determining an etch property using an endpoint signal 有权
    使用端点信号确定蚀刻性质的方法和装置

    公开(公告)号：US08048326B2

    公开(公告)日：2011-11-01

    申请号：US10531469

    申请日：2003-10-31

    Applicant: Hongyu Yue ,  Hieu A. Lam

    Inventor： Hongyu Yue ,  Hieu A. Lam

    IPC: C23F1/00 ,  G01L21/30

    CPC classification number: H01J37/32935 ,  H01J37/32963

    Abstract: The present invention presents a plasma processing system for etching a layer on a substrate comprising a process chamber, a diagnostic system coupled to the process chamber and configured to measure at least one endpoint signal, and a controller coupled to the diagnostic system and configured to determine in-situ at least one of an etch rate and an etch rate uniformity of the etching from the endpoint signal. Furthermore, an in-situ method of determining an etch property for etching a layer on a substrate in a plasma processing system is presented comprising the steps: providing a thickness of the layer; etching the layer on the substrate; measuring at least one endpoint signal using a diagnostic system coupled to the plasma processing system, wherein the endpoint signal comprises an endpoint transition; and determining the etch rate from a ratio of the thickness to a difference between a time during the endpoint transition and a starting time of the etching.

    Abstract translation: 本发明提出了一种用于蚀刻衬底上的层的等离子体处理系统，包括处理室，耦合到处理室并被配置为测量至少一个端点信号的诊断系统，以及耦合到诊断系统的控制器，并且被配置为确定 从端点信号原位蚀刻速率和蚀刻速度均匀性中的至少一个。 此外，提出了确定用于蚀刻等离子体处理系统中的衬底上的层的蚀刻性质的原位方法，包括以下步骤：提供该层的厚度; 蚀刻衬底上的层; 使用耦合到所述等离子体处理系统的诊断系统来测量至少一个端点信号，其中所述端点信号包括端点转换; 以及从所述厚度与所述端点转变期间的时间与所述蚀刻的开始时间之间的差的比率确定所述蚀刻速率。

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