公开(公告)号：US20120119186A1

公开(公告)日：2012-05-17

申请号：US13296584

申请日：2011-11-15

申请人： Jongpil Jeong ,  Sanghyun Lee ,  Seonho Lee ,  Hosang Yoon

发明人： Jongpil Jeong ,  Sanghyun Lee ,  Seonho Lee ,  Hosang Yoon

IPC分类号： H01L33/04

CPC分类号： G02B6/0083 ,  G02B6/0068 ,  G02B6/008 ,  G02B6/0091

摘要： A light emitting device may include a light emitting structure that includes a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the active layer includes a light emitting layer adjacent to the second semiconductor layer and that includes a well layer and a barrier layer and a super-lattice layer between the light emitting layer and the first semiconductor layer, the super-lattice layer including at least six pairs of a first layer and a second layer, wherein a composition of the first layer includes indium (In) and the second layer includes indium (In), and the composition of the first layer is different from the composition of the second layer.

摘要翻译： 发光器件可以包括在第一半导体层和第二半导体层之间包括第一半导体层，第二半导体层和有源层的发光结构，其中有源层包括与第二半导体相邻的发光层 并且在发光层和第一半导体层之间包括阱层和势垒层以及超晶格层，超晶格层包括至少六对第一层和第二层，其中组成 的第一层的组成包括铟（In），第二层包括铟（In），第一层的组成与第二层的组成不同。

公开(公告)号：US20110316004A1

公开(公告)日：2011-12-29

申请号：US13172277

申请日：2011-06-29

申请人： Hosang YOON ,  Daesung KANG ,  Jinsoo PARK

发明人： Hosang YOON ,  Daesung KANG ,  Jinsoo PARK

IPC分类号： H01L33/12

CPC分类号： H01L33/20 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0062 ,  H01L33/025 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L2224/48091 ,  H01L2924/00014

摘要： The embodiment relates to a light emitting device and a method for manufacturing the same. The light emitting device includes a substrate, a plurality of convex portions protruding from a flat top surface of the substrate, a first semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second conductive semiconductor layer on the active layer. A circumferential surface of each convex portion includes a continuous spherical surface, and a height of the convex portion is about 1.5 μm or less.

摘要翻译： 该实施例涉及发光器件及其制造方法。 发光装置包括基板，从基板的平坦顶面突出的多个凸部，基板上的第一半导体层，第一半导体层上的有源层和有源层上的第二导电半导体层 。 每个凸部的周面包括连续的球面，凸部的高度为1.5μm以下。

公开(公告)号：US08748863B2

公开(公告)日：2014-06-10

申请号：US13296584

申请日：2011-11-15

申请人： Jongpil Jeong ,  Sanghyun Lee ,  Seonho Lee ,  Hosang Yoon

发明人： Jongpil Jeong ,  Sanghyun Lee ,  Seonho Lee ,  Hosang Yoon

IPC分类号： H01L29/06

CPC分类号： G02B6/0083 ,  G02B6/0068 ,  G02B6/008 ,  G02B6/0091

摘要： A light emitting device may include a light emitting structure that includes a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the active layer includes a light emitting layer adjacent to the second semiconductor layer and that includes a well layer and a barrier layer and a super-lattice layer between the light emitting layer and the first semiconductor layer, the super-lattice layer including at least six pairs of a first layer and a second layer, wherein a composition of the first layer includes indium (In) and the second layer includes indium (In), and the composition of the first layer is different from the composition of the second layer.

摘要翻译： 发光器件可以包括在第一半导体层和第二半导体层之间包括第一半导体层，第二半导体层和有源层的发光结构，其中有源层包括与第二半导体相邻的发光层 并且在发光层和第一半导体层之间包括阱层和势垒层以及超晶格层，超晶格层包括至少六对第一层和第二层，其中组成 的第一层的组成包括铟（In），第二层包括铟（In），第一层的组成与第二层的组成不同。

公开(公告)号：US08405102B2

公开(公告)日：2013-03-26

申请号：US13082866

申请日：2011-04-08

申请人： Hosang Yoon ,  Sanghyun Lee ,  Jongpil Jeong ,  Seonho Lee

发明人： Hosang Yoon ,  Sanghyun Lee ,  Jongpil Jeong ,  Seonho Lee

IPC分类号： H01L29/06 ,  H01L33/00

CPC分类号： H01L33/04 ,  H01L33/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein is a light emitting device. The light emitting device includes a support member and a light emitting structure on the support member and including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer interposed between the first and second conductive semiconductor layers, and the active layer includes at least one quantum well layer and at least one barrier layer, at least one potential barrier layer located between the first conductive semiconductor layer and a first quantum well layer, closest to the first conductive semiconductor layer, out of the at least one quantum well layer, and an undoped barrier layer formed between the at least one potential barrier layer and the first quantum well layer and having a thickness different from that of the at least one barrier layer. Thereby, brightness of the light emitting device is improved through effective diffusion of current.

摘要翻译： 本文公开了一种发光器件。 发光器件包括在支撑构件上的支撑构件和发光结构，并且包括第一导电半导体层，第二导电半导体层和置于第一和第二导电半导体层之间的有源层，并且有源层包括在 至少一个量子阱层和至少一个阻挡层，至少一个位于所述第一导电半导体层和最靠近所述第一导电半导体层的第一量子阱层之间的至少一个势垒层，位于所述至少一个量子阱层中， 以及形成在所述至少一个势垒层和所述第一量子阱层之间并且具有与所述至少一个势垒层的厚度不同的厚度的未掺杂势垒层。 由此，通过有效的电流扩散来提高发光元件的亮度。

公开(公告)号：US20110248238A1

公开(公告)日：2011-10-13

申请号：US13082866

申请日：2011-04-08

申请人： Hosang Yoon ,  Sanghyun Lee ,  Jongpil Jeong ,  Seonho Lee

发明人： Hosang Yoon ,  Sanghyun Lee ,  Jongpil Jeong ,  Seonho Lee

IPC分类号： H01L33/06 ,  B82Y99/00

CPC分类号： H01L33/04 ,  H01L33/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein is a light emitting device. The light emitting device includes a support member and a light emitting structure on the support member and including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer interposed between the first and second conductive semiconductor layers, and the active layer includes at least one quantum well layer and at least one barrier layer, at least one potential barrier layer located between the first conductive semiconductor layer and a first quantum well layer, closest to the first conductive semiconductor layer, out of the at least one quantum well layer, and an undoped barrier layer formed between the at least one potential barrier layer and the first quantum well layer and having a thickness different from that of the at least one barrier layer. Thereby, brightness of the light emitting device is improved through effective diffusion of current.

摘要翻译： 本文公开了一种发光器件。 发光器件包括在支撑构件上的支撑构件和发光结构，并且包括第一导电半导体层，第二导电半导体层和置于第一和第二导电半导体层之间的有源层，并且有源层包括在 至少一个量子阱层和至少一个阻挡层，至少一个位于所述第一导电半导体层和最靠近所述第一导电半导体层的第一量子阱层之间的至少一个势垒层，位于所述至少一个量子阱层中， 以及形成在所述至少一个势垒层和所述第一量子阱层之间并且具有与所述至少一个势垒层的厚度不同的厚度的未掺杂势垒层。 由此，通过有效的电流扩散来提高发光元件的亮度。

公开(公告)号：US08587007B2

公开(公告)日：2013-11-19

申请号：US13172277

申请日：2011-06-29

申请人： Hosang Yoon ,  Daesung Kang ,  Jinsoo Park

发明人： Hosang Yoon ,  Daesung Kang ,  Jinsoo Park

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0062 ,  H01L33/025 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L2224/48091 ,  H01L2924/00014

摘要： The embodiment relates to a light emitting device and a method for manufacturing the same. The light emitting device includes a substrate, a plurality of convex portions protruding from a flat top surface of the substrate, a first semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second conductive semiconductor layer on the active layer. A circumferential surface of each convex portion includes a continuous spherical surface, and a height of the convex portion is about 1.5 μm or less.

摘要翻译： 该实施例涉及发光器件及其制造方法。 发光装置包括基板，从基板的平坦顶面突出的多个凸部，基板上的第一半导体层，第一半导体层上的有源层和有源层上的第二导电半导体层 。 每个凸部的圆周表面包括连续的球形表面，并且凸部的高度为约1.5μm或更小。