公开(公告)号：US08791444B2

公开(公告)日：2014-07-29

申请号：US13304085

申请日：2011-11-23

申请人： Albert Chin ,  Chun-Hu Cheng

发明人： Albert Chin ,  Chun-Hu Cheng

IPC分类号： H01L47/00

CPC分类号： H01L45/04 ,  B82Y10/00 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641

摘要： Resistive random access memory (RRAM) using stacked dielectrics and a method for manufacturing the same are disclosed, where a setting power of only 4 μW, an ultra-low reset power of 2 nW, good switching uniformity and excellent cycling endurance up to 5×109 cycles were achieved simultaneously. Such record high performances were reached in a Ni/GeOx/nano-crystal-TiO2/TaON/TaN RRAM device, where the excellent endurance is 4˜6 orders of magnitude larger than existing Flash memory. The very long endurance and low switching energy RRAM is not only satisfactory for portable SSD in a computer, but may also create new applications such as being used for a Data Center to replace high power consumption hard discs.

摘要翻译： 公开了使用堆叠电介质的电阻随机存取存储器（RRAM）及其制造方法，其中设置功率仅为4μW，超低复位功率为2nW，良好的开关均匀性和优异的循环耐受性高达5× 同时实现了109个循环。 在Ni / GeOx /纳米晶体TiO2 / TaON / TaN RRAM器件中达到了这样的高性能，其耐久性比现有闪存大4〜6个数量级。 非常长的耐用性和低开关能量RRAM不仅对于计算机中的便携式SSD是令人满意的，而且还可以创建新的应用，例如用于数据中心来替代高功率硬盘。

公开(公告)号：US08470659B2

公开(公告)日：2013-06-25

申请号：US13595599

申请日：2012-08-27

申请人： Liang-Gi Yao ,  Chun-Hu Cheng ,  Chen-Yi Lee ,  Jeff J. Xu ,  Clement Hsingjen Wann

发明人： Liang-Gi Yao ,  Chun-Hu Cheng ,  Chen-Yi Lee ,  Jeff J. Xu ,  Clement Hsingjen Wann

IPC分类号： H01L21/8249

CPC分类号： H01L29/513 ,  H01L21/02172 ,  H01L21/022 ,  H01L21/28158 ,  H01L21/28211 ,  H01L21/283 ,  H01L29/42364 ,  H01L29/517 ,  H01L29/78

摘要： This description relates to a method including forming an interfacial layer over a semiconductor substrate. The method further includes etching back the interfacial layer. The method further includes performing an ultraviolet (UV) curing process on the interfacial layer. The UV curing process includes supplying a gas flow rate ranging from 10 standard cubic centimeters per minute (sccm) to 5 standard liters per minute (slm), wherein the gas comprises inert gas, and heating the interfacial layer at a temperature less than or equal to 700° C. The method further includes depositing a high-k dielectric material over the interfacial layer.

摘要翻译： 该描述涉及包括在半导体衬底上形成界面层的方法。 该方法还包括蚀刻回界面层。 该方法还包括在界面层上进行紫外线（UV）固化过程。 UV固化方法包括将每分钟10标准立方厘米（sccm）的气体流速提供到5标准升/分钟（slm），其中气体包括惰性气体，并且在小于或等于的温度下加热界面层 至700℃。该方法还包括在界面层上沉积高k介电材料。

公开(公告)号：US20130126818A1

公开(公告)日：2013-05-23

申请号：US13304085

申请日：2011-11-23

申请人： Albert Chin ,  Chun-Hu Cheng

发明人： Albert Chin ,  Chun-Hu Cheng

IPC分类号： H01L45/00 ,  H01L21/8239 ,  B82Y99/00 ,  B82Y30/00

CPC分类号： H01L45/04 ,  B82Y10/00 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641

摘要： Resistive random access memory (RRAM) using stacked dielectrics and a method for manufacturing the same are disclosed, where a setting power of only 4 μW, an ultra-low reset power of 2 nW, good switching uniformity and excellent cycling endurance up to 5×109 cycles were achieved simultaneously. Such record high performances were reached in a Ni/GeOx/nano-crystal-TiO2/TaON/TaN RRAM device, where the excellent endurance is 4˜6 orders of magnitude larger than existing Flash memory. The very long endurance and low switching energy RRAM is not only satisfactory for portable SSD in a computer, but may also create new applications such as being used for a Data Center to replace high power consumption hard discs.

摘要翻译： 公开了使用堆叠电介质的电阻随机存取存储器（RRAM）及其制造方法，其中设置功率仅为4μW，超低复位功率为2nW，良好的开关均匀性和优异的循环耐受性高达5× 同时实现了109个循环。 在Ni / GeOx / nano-crystal-TiO2 / TaON / TaN RRAM器件中达到了这样的高性能，其耐久性比现有闪存大4〜6个数量级。 非常长的耐用性和低开关能量RRAM不仅对于计算机中的便携式SSD是令人满意的，而且还可以创建新的应用，例如用于数据中心来替代高功率硬盘。

公开(公告)号：US20120322253A1

公开(公告)日：2012-12-20

申请号：US13595599

申请日：2012-08-27

申请人： Liang-Gi YAO ,  Chun-Hu CHENG ,  Chen-Yi LEE ,  Jeff J. XU ,  Clement Hsingjen WANN

发明人： Liang-Gi YAO ,  Chun-Hu CHENG ,  Chen-Yi LEE ,  Jeff J. XU ,  Clement Hsingjen WANN

IPC分类号： H01L21/283 ,  H01L21/311

CPC分类号： H01L29/513 ,  H01L21/02172 ,  H01L21/022 ,  H01L21/28158 ,  H01L21/28211 ,  H01L21/283 ,  H01L29/42364 ,  H01L29/517 ,  H01L29/78

摘要： This description relates to a method including forming an interfacial layer over a semiconductor substrate. The method further includes etching back the interfacial layer. The method further includes performing an ultraviolet (UV) curing process on the interfacial layer. The UV curing process includes supplying a gas flow rate ranging from 10 standard cubic centimeters per minute (sccm) to 5 standard liters per minute (slm), wherein the gas comprises inert gas, and heating the interfacial layer at a temperature less than or equal to 700° C. The method further includes depositing a high-k dielectric material over the interfacial layer.

摘要翻译： 该描述涉及包括在半导体衬底上形成界面层的方法。 该方法还包括蚀刻回界面层。 该方法还包括在界面层上进行紫外线（UV）固化过程。 UV固化方法包括将每分钟10标准立方厘米（sccm）的气体流速提供到5标准升/分钟（slm），其中气体包括惰性气体，并且在小于或等于的温度下加热界面层 至700℃。该方法还包括在界面层上沉积高k电介质材料。

公开(公告)号：US20060233455A1

公开(公告)日：2006-10-19

申请号：US11405317

申请日：2006-04-17

申请人： Hu Cheng ,  Feng Huang

发明人： Hu Cheng ,  Feng Huang

IPC分类号： G06K9/40

CPC分类号： G01R33/56563 ,  G01R33/5608 ,  G01R33/5659 ,  G06K9/40 ,  G06T5/005 ,  G06T2207/30004

摘要： The subject invention pertains to a method of image intensity correction. The subject invention can utilize extrapolation for image intensity correction. The use of extrapolation can reduce the artifacts during intensity correction as compared to traditional methods of intensity correction. The extrapolation can be combined with, for example, homomorphic filtering methods, parametric estimation techniques, wavelet based method, and/or Gaussian smooth method, in order to reduce the artifacts generated by these methods and improve the quality of correction. The implementation of image extrapolation in accordance with a specific embodiment can utilize closest point method. The subject method can also use adaptive smoothing for image intensity correction. In an embodiment, the use of gradient weighted smoothing method can reduce, or eliminate, over-smoothing of bright spot regions. In a specific embodiment, the subject method can utilize gradient weighted partial differential equation (PDE) smoothing.

公开(公告)号：US20050253580A1

公开(公告)日：2005-11-17

申请号：US11128731

申请日：2005-05-13

申请人： Feng Huang ,  Hu Cheng ,  G. Duensing

发明人： Feng Huang ,  Hu Cheng ,  G. Duensing

IPC分类号： G01R33/54 ,  G01R33/56 ,  G01V3/00

CPC分类号： G01R33/54 ,  G01R33/56 ,  G01R33/5608

摘要： The subject invention pertains to a method for magnetic resonance imaging (MRI) involving the acquisition of pseudo-polar K-space data and creation of an MRI image from the pseudo-polar K-space data. In an embodiment, the subject method can incorporate a scan scheme for acquiring pseudo-polar K-space data and corresponding reconstruction technique. Advantageously, the subject method can result in reduced motion artifact in dynamic MRI with short acquisition time and short reconstruction time. In a specific embodiment, the subject method can incorporate a reconstruction method utilizing Fractional FFT in MRI. The subject method can allow the acquisition of pseudo-polar K-space data. In a specific embodiment, the acquisition of the pseudo-polar is accomplished by one shot. Other acquisition techniques can also be utilized in accordance with the subject invention. In an embodiment, the pseudo-polar K-space data can lie at the origin of K-space and on N linearly growing concentric squares, with N≦2, where the distance between adjacent concentric squares is the same as the distance from the origin to the innermost square. The K-space data on the N concentric squares are equally spaced from adjacent data points on the same square, including data points at the corners of each square.

摘要翻译： 本发明涉及一种用于磁共振成像（MRI）的方法，其涉及从伪极坐标K空间数据获取伪极坐标K空间数据和创建MRI图像。 在一个实施例中，本发明方法可以包括用于获取伪极坐标K空间数据和对应的重建技术的扫描方案。 有利地，本方法可以导致动态MRI中的运动伪影减少，获取时间短和重建时间短。 在一个具体实施例中，本发明方法可以结合利用MRI中的分数FFT的重建方法。 主题方法可以允许获取伪极化K空间数据。 在具体实施例中，伪极性的获取通过一次镜头来实现。 根据本发明也可以使用其他采集技术。 在一个实施例中，伪极化K空间数据可以位于K空间的原点和N个线性增长的同心平方上，其中N <= 2，其中相邻同心正方形之间的距离与距离 起源于最内层的广场。 N个同心圆弧上的K空间数据与同一平方的相邻数据点相等间隔，包括每个正方形角的数据点。

公开(公告)号：US06828719B1

公开(公告)日：2004-12-07

申请号：US10441206

申请日：2003-05-20

申请人： Chu-Chun Huang ,  Wen-Hu Cheng ,  Swi Mu Lin

发明人： Chu-Chun Huang ,  Wen-Hu Cheng ,  Swi Mu Lin

IPC分类号： H01J162

CPC分类号： H01J61/44 ,  B01D53/007 ,  B01D2255/802 ,  B01J35/004 ,  C03C17/004 ,  C03C17/005 ,  C03C17/256 ,  C03C2217/212 ,  C03C2217/217 ,  C03C2217/218 ,  C03C2217/219 ,  C03C2217/71 ,  C03C2218/113 ,  H01J61/32 ,  H01J61/35

摘要： An illuminator capable of cleaning air is disclosed. The illuminator includes a transparent lamp envelope having two ends. A layer of glue body is adhered to inner surface of the lamp envelope. An amount of visible and UV light fluorescent powders are mixed in the layer of glue body. Electrode bases seal both ends of the lamp envelope. A photocatalytic gel film is coated on outer surface of the lamp envelope.

摘要翻译： 公开了一种能够清洁空气的照明器。 照明器包括具有两端的透明灯泡。 一层胶体粘附在灯壳的内表面上。 一定量的可见光和紫外光荧光粉混合在胶体层中。 电极底座密封灯泡的两端。 将光催化凝胶膜涂覆在灯壳的外表面上。

公开(公告)号：US5918702A

公开(公告)日：1999-07-06

申请号：US856150

申请日：1997-05-14

申请人： Bao Cheng ,  Hu Cheng

发明人： Bao Cheng ,  Hu Cheng

IPC分类号： B05C17/005 ,  F16N3/12 ,  F16N11/02 ,  F16N21/00

CPC分类号： F16N11/02 ,  B05C17/00569 ,  F16N3/12

摘要： A grease gun device includes a cock body having a piston cylinder and a slot joint. The piston cylinder also includes a seal washer opening and an outlet opening spatially disposed from the seal washer opening. A piston is reciprocatingly engaged in the piston cylinder for moving grease from the slot joint to the outlet opening, wherein a valve mechanism selectively allows grease from the piston cylinder to pass through the outlet opening. A grease supply barrel having a grease opening is engaged with the cock body to supply grease to the piston cylinder, and a sealed piston closes the other end of the grease supply barrel. A jacket is mounted about the grease barrel and connected with the cock body, wherein the diameter of an outermost periphery of the grease barrel is less than an inside diameter of the jacket, such that the grease barrel does not overlap the jacket. A rear cover engages the far end of the jacket. In use, moving the piston in a first direction in the piston cylinder pushes grease through the outlet opening, and moving the piston in a second direction in the piston cylinder induces a vacuum pressure in the piston cylinder, which moves grease from the grease barrel, through the slot joint, and into the piston cylinder. A seal washer disposed in the seal washer opening sealingly engages the piston and helps maintain the vacuum pressure in the piston cylinder.

摘要翻译： 油枪装置包括具有活塞气缸和狭槽接头的旋塞体。 活塞气缸还包括密封垫圈开口和从密封垫圈开口空间设置的出口开口。 活塞往复接合在活塞缸中，用于将油脂从槽接头移动到出口，其中阀机构选择性地允许来自活塞缸的油脂通过出口。 具有油脂开口的润滑脂供给筒与旋塞体接合以向活塞气缸供给润滑脂，并且密封活塞封闭供油筒的另一端。 护套安装在油脂筒周围并与旋塞阀体连接，其中油脂筒的最外周的直径小于护套的内径，使得油脂桶不与外套重叠。 后盖接合护套的远端。 在使用中，在活塞缸中沿着第一方向移动活塞通过出口开启润滑脂，并且使活塞沿活塞气缸的第二方向移动，使得活塞气缸中的真空压力从油脂筒移动， 通过槽缝，进入活塞缸。 设置在密封垫圈开口中的密封垫圈密封地接合活塞并帮助维持活塞缸中的真空压力。

公开(公告)号：US08268683B2

公开(公告)日：2012-09-18

申请号：US12782859

申请日：2010-05-19

申请人： Liang-Gi Yao ,  Chun-Hu Cheng ,  Chen-Yi Lee ,  Jeff J. Xu ,  Clement Hsingjen Wann

发明人： Liang-Gi Yao ,  Chun-Hu Cheng ,  Chen-Yi Lee ,  Jeff J. Xu ,  Clement Hsingjen Wann

IPC分类号： H01L21/8249

CPC分类号： H01L29/513 ,  H01L21/02172 ,  H01L21/022 ,  H01L21/28158 ,  H01L21/28211 ,  H01L21/283 ,  H01L29/42364 ,  H01L29/517 ,  H01L29/78

摘要： A method for reducing interfacial layer (IL) thickness for high-k dielectrics and metal gate stack is provided. In one embodiment, the method includes forming an interfacial layer on a semiconductor substrate, etching back the interfacial layer, depositing a high-k dielectric material over the interfacial layer, and forming a metal gate over the high-k dielectric material. The IL can be chemical oxide, ozonated oxide, thermal oxide, or formed by ultraviolet ozone (UVO) oxidation process from chemical oxide, etc. The etching back of IL can be performed by a Diluted HF (DHF) process, a vapor HF process, or any other suitable process. The method can further include performing UV curing or low thermal budget annealing on the interfacial layer before depositing the high-k dielectric material.

摘要翻译： 提供了一种用于降低高k电介质和金属栅极叠层的界面层（IL）厚度的方法。 在一个实施例中，该方法包括在半导体衬底上形成界面层，蚀刻回界面层，在界面层上沉积高k电介质材料，以及在高k电介质材料上形成金属栅极。 IL可以是化学氧化物，臭氧化氧化物，热氧化物，或者由化学氧化物等的紫外线臭氧（UVO）氧化过程形成.II的回蚀可以通过稀释HF（DHF）工艺，蒸气HF工艺 ，或任何其他合适的过程。 该方法还可以包括在沉积高k介电材料之前在界面层上进行UV固化或低热预算退火。

公开(公告)号：US20070088211A1

公开(公告)日：2007-04-19

申请号：US11452605

申请日：2006-06-13

申请人： Hu Cheng ,  Qun Zhao ,  William Edelstein ,  G. Duensing

发明人： Hu Cheng ,  Qun Zhao ,  William Edelstein ,  G. Duensing

IPC分类号： A61B5/05

CPC分类号： A61B5/055

摘要： The subject invention relates to a method and apparatus for producing stimulated MRI data. In an embodiment, a remote-controlled “smart phantom” can produce simulated data. The simulated data can be acquired from a MRI system. The subject device can generate control signals and send the generated control signals to secondary coils/probes placed in the subject smart phantom. The control signals determine the current flow in the secondary coils/probes, which act as local spin magnetization amplifiers and thus produce regions of variable contrast to noise ratio. The control signals can be generated with various parameters, such as BOLD models, different levels of contrast-to-noise ratio (CNR), signal intensities, and physiological signals. Comparisons can be made with the widely-used simulated data by computers. Validation of the subject smart phantom can be performed with both theoretical analysis and data of human subjects.

摘要翻译： 本发明涉及用于产生刺激的MRI数据的方法和装置。 在一个实施例中，远程控制的“智能幻影”可以产生模拟数据。 可以从MRI系统获取模拟数据。 主体装置可以产生控制信号，并将产生的控制信号发送到放置在主体智能幻影中的次级线圈/探头。 控制信号确定次级线圈/探头中的电流，其作为局部自旋磁化放大器，从而产生可变对比度噪声比的区域。 控制信号可以用诸如BOLD模型，不同等级的对比噪声比（CNR），信号强度和生理信号等各种参数产生。 可以用计算机广泛使用的模拟数据进行比较。 可以通过理论分析和人类受试者的数据进行主体智能幻影的验证。