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    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE 有权
    半导体器件及制造半导体器件的方法

    公开(公告)号：US20130161711A1

    公开(公告)日：2013-06-27

    申请号：US13614654

    申请日：2012-09-13

    申请人： Jung-Soo NAM ,  Joon-Suk Oh ,  Hye-Young Park

    发明人： Jung-Soo NAM ,  Joon-Suk Oh ,  Hye-Young Park

    IPC分类号： H01L29/94 ,  H01L29/78

    CPC分类号： H01L29/78 ,  H01L27/0629 ,  H01L27/0811 ,  H01L29/66181 ,  H01L29/94

    摘要： A semiconductor device includes a substrate including an active region having an isolated shape and a field region. A gate insulation layer is provided on an upper surface of the active region of the substrate. A gate electrode is provided on the gate insulation layer and spaced apart from the boundary of the active region to cover the middle portion of the active region. An impurity region is provided under a surface of the active region that is exposed by the gate electrode.

    摘要翻译： 半导体器件包括具有隔离形状的有源区和场区的衬底。 栅极绝缘层设置在衬底的有源区的上表面上。 栅电极设置在栅绝缘层上并与有源区的边界隔开以覆盖有源区的中间部分。 在由栅电极露出的有源区的表面下方设置有杂质区。

    Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices
    4.
    发明授权
    Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices 失效
    相变材料层，其形成方法，具有该相变材料层的相变存储器件，以及形成相变存储器件的方法

    公开(公告)号：US07807497B2

    公开(公告)日：2010-10-05

    申请号：US11826048

    申请日：2007-07-12

    申请人： Jin-II Lee ,  Sung-Lae Cho ,  Young-Lim Park ,  Hye-Young Park

    发明人： Jin-II Lee ,  Sung-Lae Cho ,  Young-Lim Park ,  Hye-Young Park

    IPC分类号： H01L45/00

    CPC分类号： C23C16/45523 ,  C23C16/305 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1675 ,  H01L45/1683

    摘要： Example embodiments may provide phase-change material layers and a method of forming a phase-change material layer and devices using the same by generating a plasma including helium and/or argon in a reaction chamber, forming a first material layer on the object by introducing a first source gas including a first material, forming a first composite material layer on the object by introducing a second source gas including a second material into the reaction chamber, forming a third material layer on the first composite material layer by introducing a third source gas including a third material, and forming a second composite material layer on the first composite material layer by introducing a fourth source gas including a fourth material. Example embodiment phase-change material layers including carbon may be more easily and/or quickly formed at lower temperatures under the helium/argon plasma environment by providing the source gases for various feeding times. Example embodiments may also include memory devices using phase-change memory layers.

    摘要翻译： 示例性实施例可以提供相变材料层以及通过在反应室中产生包括氦和/或氩的等离子体来形成相变材料层的方法和使用该相变材料层的装置，通过引入在物体上形成第一材料层 包括第一材料的第一源气体，通过将包括第二材料的第二源气体引入反应室，在物体上形成第一复合材料层，通过引入第三源气体在第一复合材料层上形成第三材料层 包括第三材料，并且通过引入包括第四材料的第四源气体，在所述第一复合材料层上形成第二复合材料层。 示例性实施例包括碳的相变材料层可以在较低温度下在氦/氩等离子体环境下更容易地和/或快速地形成，方法是提供用于各种进料时间的源气体。 示例性实施例还可以包括使用相变存储器层的存储器件。

    Optical fiber with zero dispersion wavelength shifted to short wavelength region, and optical transmission line and optical transmission system using the same
    8.
    发明授权
    Optical fiber with zero dispersion wavelength shifted to short wavelength region, and optical transmission line and optical transmission system using the same 失效
    具有零色散波长的光纤转移到短波长区域，光传输线路和光传输系统使用相同

    公开(公告)号：US07454109B2

    公开(公告)日：2008-11-18

    申请号：US11631553

    申请日：2004-07-13

    申请人： Hye-Young Park ,  Jun-Ho Mun

    发明人： Hye-Young Park ,  Jun-Ho Mun

    IPC分类号： G02B6/36 ,  G02B6/02 ,  G02B6/28

    CPC分类号： G02B6/02014 ,  G02B6/02266 ,  G02B6/0228 ,  G02B6/03627

    摘要： Disclosed is an optical fiber suitable for WDM system, particularly whose zero-dispersion wavelength is positioned in a short wavelength band less than 1,300 mm. In the optical fiber, dispersion has a positive value, not zero, at 1,310 nm, and a dispersion slope is positive at 1,550 nm with dispersion of 25 ps/nm-km or less. In addition, an effective sectional area is 65 μm2 or less at 1,310 nm, and 80 μm2 or less at 1,550 nm.Thus, though a transmission signal is Raman-amplified at a wavelength band of 1,300˜1,700 nm, transmission characteristics are not deteriorated due to crosstalk between pump signals. In addition, since the optical fiber has smaller effective sectional area than a general single-mode optical fiber with having substantially the same dispersion feature, it gives better Raman gain efficiency than a general single-mode optical fiber.

    摘要翻译： 公开了适用于WDM系统的光纤，特别是其零色散波长位于小于1300mm的短波长带内。 在光纤中，在1310nm处的色散为正值，不为零，在1550nm处的色散斜率为25ps / nm-km或更小的色散。 此外，有效截面积在1,310nm为65μm以下，在1,550nm处为80μm以上2μm以下。 因此，虽然传输信号在1,300〜1700nm的波长带被拉曼放大，但由于泵浦信号之间的串扰，传输特性不会劣化。 此外，由于光纤具有比具有基本上相同色散特征的一般单模光纤更小的有效截面积，因此与一般单模光纤相比，其提供更好的拉曼增益效率。

    METHOD OF FORMING A PHASE-CHANGEABLE LAYER AND METHOD OF MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE USING THE SAME
    9.
    发明申请
    METHOD OF FORMING A PHASE-CHANGEABLE LAYER AND METHOD OF MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE USING THE SAME 审中-公开
    形成相变层的方法及使用其制造半导体存储器件的方法

    公开(公告)号：US20080096386A1

    公开(公告)日：2008-04-24

    申请号：US11876631

    申请日：2007-10-22

    申请人： Young-Lim PARK ,  Sung-Lae CHO ,  Byoung-Jae BAE ,  Jin-Il LEE ,  Hye-Young PARK ,  Ji-Eun LIM

    发明人： Young-Lim PARK ,  Sung-Lae CHO ,  Byoung-Jae BAE ,  Jin-Il LEE ,  Hye-Young PARK ,  Ji-Eun LIM

    IPC分类号： H01L21/02

    CPC分类号： H01L27/2436 ,  C23C16/305 ,  C23C16/45525 ,  C23C16/45538 ,  C23C16/45553 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1675

    摘要： A phase-changeable layer and a method of forming the same are disclosed. In the method, a first hydrogen gas is introduced into a reaction chamber into which a substrate is loaded at a first flow rate to form first plasma. A primary cyclic CVD process is carried out using precursors in the reaction chamber to form a lower phase-changeable layer having a first grain size on the substrate. A second hydrogen gas is introduced into the reaction chamber at a second flow rate less than the first flow rate to form second plasma. A secondary cyclic CVD process is carried out using the precursors in the reaction chamber to form an upper phase-changeable layer having a second grain size smaller than the first grain size on the substrate, thereby forming a phase-changeable layer. Thus, the phase-changeable layer may have strong adhesion strength with respect to a lower layer and good electrical characteristics.

    摘要翻译： 公开了一种相变层及其形成方法。 在该方法中，将第一氢气引入反应室中，以第一流速将载体加载到反应室中以形成第一等离子体。 使用反应室中的前体进行初级循环CVD工艺，以在衬底上形成具有第一晶粒尺寸的下相变层。 将第二氢气以小于第一流量的第二流量引入反应室中以形成第二等离子体。 使用反应室中的前体进行二次循环CVD工艺，以形成具有比基板上的第一晶粒尺寸小的第二晶粒尺寸的上相变层，从而形成相变层。 因此，相变层可以具有相对于较低层的强粘合强度和良好的电特性。

    Optical fiber, and optical transmission line and optical transmission system using the same
    10.
    发明授权
    Optical fiber, and optical transmission line and optical transmission system using the same 失效
    光纤，光传输线和光传输系统使用相同

    公开(公告)号：US07340141B2

    公开(公告)日：2008-03-04

    申请号：US11631754

    申请日：2004-07-13

    申请人： Hye-Young Park ,  Jun-Ho Mun

    发明人： Hye-Young Park ,  Jun-Ho Mun

    IPC分类号： G02B6/02

    CPC分类号： G02B6/03633 ,  G02B6/02014 ,  G02B6/02242 ,  G02B6/02266 ,  G02B6/0228

    摘要： Disclosed is an optical fiber suitable for an optical transmission line used in WDM system, particularly a single-mode optical fiber whose zero-dispersion wavelength is positioned in a short wavelength band (less than 1,370 mm) so as to enable high-speed mass-storage signal transmission over S-C-L bands (1,460˜1,625 nm) and whose dispersion value and effective sectional area are optimized. In the optical fiber, a dispersion value is at least 9 ps/nm-km at 1,460 nm, an effective sectional area is 45-65 μm2 at 1,460 rim, a zero-dispersion wavelength exists at 1,370 nm or less, and a dispersion slope is positive. In addition, RDS (Relative Dispersion Slope) is 0.0032˜0.0038 nm−1 at 1,550 nm. Thus, the optical fiber enables to repress non-linearity and signal distortion to the maximum during 320 km repeaterless transmission with a transmission rate of 10 Gb/s or more over S-C-L bands, a channel spacing of 50 GHz or less, 16 channels, and a signal power of 0 dBm/ch or 2 dBm/ch.

    摘要翻译： 公开了一种适用于WDM系统中使用的光传输线的光纤，特别是其零色散波长位于短波长带（小于1370mm）的单模光纤，以便能够实现高速质量 - 存储信号通过SCL频带（1,460〜1,625 nm）传输，其色散值和有效截面积优化。 在光纤中，在1,460nm处的色散值至少为9ps / nm-km，有效截面积为1,460 rim处的有效截面积为45-65μm×2，零色散波长存在于1,370 nm以下，色散斜率为正。 另外，在1550nm处，RDS（相对色散斜率）为0.0032〜0.0038nm -1。 因此，光纤使得能够在320km无中继传输期间将非线性和信号失真抑制到最大，具有在SCL频带上的10Gb / s以上的传输速率，50GHz以下的信道间隔，16个信道，以及 信号功率为0 dBm / ch或2 dBm / ch。