摘要:
A method of reading data in a data storage device with a controller and a memory includes generating, in the memory, a set of bits corresponding to a particular storage element of the memory. The set of bits indicates a group of threshold voltage intervals. A threshold voltage of the particular storage element corresponds to one of the threshold voltage intervals within the group. At least one threshold voltage interval within the group is separated from another threshold voltage interval within the group by an intervening threshold voltage interval that is not within the group. The method also includes sending the set of bits to the controller. The set of bits includes a first hard bit that corresponds to a value read from the particular storage element and a first soft bit that corresponds to a reliability measure.
摘要:
A storage module and low-complexity methods for assessing the health of a flash memory device are disclosed. In one embodiment, data is written to a subset of memory cells in a memory of a storage module. Error statistics for the subset of memory cells are determined, and cell error rate parameters for the memory are estimated by fitting the determined error statistics for the subset of memory cells with a parametric statistical model. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.
摘要:
A method of writing data includes receiving data pages to be stored in a data storage device and generating codewords corresponding to the received data pages. The codewords are stored to physical pages of a first memory portion of the data storage device. A first portion of a particular codeword that corresponds to a particular data page is stored at a first physical page of the first memory portion. A second portion of the particular codeword is stored at a second physical page of the first memory portion. The codewords are copied from the physical pages of the first memory portion to a physical page of a second memory portion of the data storage device.
摘要:
A storage module and low-complexity methods for assessing the health of a flash memory device are disclosed. In one embodiment, data is written to a subset of memory cells in a memory of a storage module. Error statistics for the subset of memory cells are determined, and cell error rate parameters for the memory are estimated by fitting the determined error statistics for the subset of memory cells with a parametric statistical model. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.
摘要:
A system and method for partitioning data in long term memory of a flash memory device is disclosed. The method may include the steps of identifying a type of data that has been received and routing the data to one of at least two partitions in the long term memory array. One partition of the flash memory device may be optimized for random data while another is optimized for sequential data. The method includes identifying the type of data and routing the data to the appropriate partition. Data may be analyzed and routed upon receipt or initially stored in a default partition and later analyzed and routed to another partition. The partition for random data may be configured for storing data using a first level of ECC protection while the second may be configured for storing data using a second, stronger level of ECC protection.
摘要:
Data bits to be encoded are split into a plurality of subgroups. Each subgroup is encoded separately to generate a corresponding codeword. Selected subsets are removed from the corresponding codewords, leaving behind shortened codewords, and are many-to-one transformed to condensed bits. The final codeword is a combination of the shortened codewords and the condensed bits. A representation of the final codeword is decoded by being partitioned to a selected subset and a plurality of remaining subsets. Each remaining subset is decoded separately. A subset whose decoding is terminated is decoded again, at least in part according to the selected subset. If the encoding and decoding are systematic then the selected subsets are of parity bits.
摘要:
The present application is directed to systems and methods for managing data in a system for hibernation states. In one implementation, a memory device comprises a controller memory, a main memory, a buffer to the main memory and a controller comprising a processor. The processor is configured to manage data storage in conjunction with hibernation of the memory device. The processor is in communication with the controller memory, the main memory and the buffer, and is configured to read data from the controller memory; write at least a portion of the data read from the controller memory into the buffer prior to the memory device entering a hibernation state; and after writing the at least a portion of the data read from the controller memory into the buffer and prior to the memory device entering the hibernation state, reduce an amount of power provided to the buffer of the to a reduced power level.
摘要:
Data that are stored in cells of a multi-bit-per cell memory, according to a systematic or non-systematic ECC, are read and corrected (systematic ECC) or recovered (non-systematic ECC) in accordance with estimated probabilities that one or more of the read bits are erroneous. In one method of the present invention, the estimates are a priori. In another method of the present invention, the estimates are based only on aspects of the read bits that include significances or bit pages of the read bits. In a third method of the present invention, the estimates are based only on values of the read bits. Not all the estimates are equal.
摘要:
A method includes a first encoding operation associated with a first algebraic error correcting code generating a first set of first parity bits corresponding to a first set of information bits and a second set of first parity bits corresponding to a second set of information bits. A second encoding operation associated with a second algebraic error correcting code generates a first set of second parity bits corresponding to the first set of information bits and a second set of second parity bits corresponding to the second set of information bits. A third encoding operation generates a set of joint parity bits. The first set of information bits, the second set of information bits, the first set of first parity bits, the second set of first parity bits, and the joint parity bits may be stored in a data storage device as a single codeword.
摘要:
A memory includes cells at intersections of word lines and bit lines, word and bit line selection mechanisms and a programming mechanism. The cells on each bit line are connected in series. Cells of a word line are programmed simultaneously. For low-power reading, only some of the bit lines that intersect the word line at the programmed cells are selected and only the cells at those intersections are sensed. Another type of memory includes a physical page of cells, a sensing mechanism and a selection mechanism. Hard bits are sensed from all the cells of the physical page. Only some of those cells are selected for sensing soft bits. Another memory includes a plurality of cells, a sensing mechanism, an export mechanism and a selection mechanism. Hard and soft bits are sensed from all the cells of the plurality. Only some of the soft bits are selected for export.