摘要:
Provided are a touch screen and a method of operating the same. The touch screen includes a detecting part, a control part, and a tactile feedback part. The detecting part detects object's approach or contact. The control part receives a signal of the detecting part to output a feedback signal. The tactile feedback part receives the feedback signal of the control part to provide a tactile feedback to a contact position using a magnetic force. The tactile feedback uses the magnetic force of a magnetic dipole.
摘要:
The inventive concept provides organic light emitting diodes and methods of fabricating the same. The method may include forming an insulating layer on a substrate, coating a metal ink on the insulating layer, thermally treating the substrate to permeate the metal ink into the insulating layer, thereby forming an assistant electrode layer the insulating layer and the metal ink embedded in the insulating layer, and sequentially forming a first electrode, an organic light emitting layer, a second electrode on the assistant electrode layer.
摘要:
A composition for an organic dielectric, includes a compound represented by Formula 1 below; and a cross-linking agent, wherein, in Formula 1, R1 is any one of hydrogen, hydroxyl group, ester group, amide group, or alkyl group or alkoxy group of a carbon number of 1 to 12, R2 is selected from electrolytic functional groups, each of a and b is a positive integer, and the ratio of b to a (b/a) is larger than 0 and smaller than 99,
摘要:
Provided are a resistive memory device and a method of fabricating the same. The resistive memory device comprises an electron channel layer formed by means of a swelling process and an annealing process. Thus, conductive nanoparticles are uniformly dispersed in the electron channel layer to improve reliability of the resistive memory device. According to the method, an electron channel layer is formed by means of a printing process, a swelling process, and an annealing process. Thus, fabrication time is reduced.
摘要:
Provided is a method for manufacturing a semiconductor device. The method includes: providing a first substrate where an active layer is formed on a buried insulation layer; forming a gate insulation layer on the active layer; forming a gate electrode on the gate insulation layer; forming a source/drain region on the active layer at both sides of the gate electrode; exposing the buried insulation layer around a thin film transistor (TFT) including the gate electrode and the source/drain region; forming an under cut at the bottom of the TFT by partially removing the buried insulation layer; and transferring the TFT on a second substrate.
摘要:
Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.
摘要:
Provided is a display panel comprised of a white color organic luminescent element and a color filter for full color implementation, wherein a substrate in which an organic luminescent element is formed and a color filter are assembled and fixed to face each other with an adhesive pattern therebetween, and liquid oil is filled between the color filter and the substrate inside of the adhesive pattern so as to block external moisture or oxygen, so that deterioration of luminous characteristics due to the external moisture or oxygen may be prevented by encapsulating the organic luminescent element and the color filter with the liquid oil, which leads to enhance reliability and stability of the element, and also allows the encapsulation process to be performed with relatively simple steps and low cost.
摘要:
Provided is a method for depositing an organic/inorganic thin film. The method includes: i) heating a source vessel containing an organic material and an inorganic material; ii) transferring a deposition gas to a process chamber; iii) distributing the deposition gas onto a substrate disposed in the process chamber; iv) purging the process chamber; v) heating an activating agent source vessel; vi) transferring a heat initiator gas phase to the process chamber; vii) distributing the heat initiator gas phase onto the organic or inorganic material monomer deposited on the substrate through the process chamber, and forming an organic/inorganic thin film; and viii) exhausting the heat initiator gas phase and purging the process chamber. Depositing the organic/inorganic thin film in a time-division manner, the thickness of the thin film can be accurately adjusted and the deposition can be uniformly performed when the thin film is deposited on a large-scale substrate.
摘要:
Provided is an organic thin film transistor, method of forming the same, and a memory device employing the same. The organic thin film transistor includes a substrate, a source electrode and a drain electrode on the substrate, an active layer on the substrate between the source electrode and the drain electrode, a gate electrode controlling the active layer, and an organic dielectric layer between the active layer and the gate electrode. The organic dielectric layer includes nanoparticles, a hydrophilic polymer surrounding the nanoparticles, and a hydrophobic polymer.
摘要:
Provided are a non-volatile memory device and a method of forming the non-volatile memory device. The non-volatile memory device includes a substrate, a lower electrode on the substrate, a diffusion barrier preventing the diffusion of a space charge on the lower electrode, a charge storage layer having a space charge limited characteristic on the diffusion barrier, and an upper electrode on the charge storage layer.