摘要:
Provided is a self aligned field effect transistor structure. The self aligned field effect transistor structure includes: an active region pattern on a substrate; a first gate electrode and a second gate electrode facing each other with the active region pattern therebetween; and a source electrode and a drain electrode connected to the active region pattern and disposed to be symmetric with respect to a line connecting the first and second gate electrodes, wherein the first and second gate electrodes and the source and drain electrodes are disposed on the same plane of the substrate.
摘要:
Disclosed are a printing plate and a mirror thereof, the printing plate including: printing portions for transferring an immersed solution, the printing portions being formed flat and arranged at regular intervals on one side of an upper part of the printing plate; and non-printing portions corresponding to a remaining area other than the printing portions, the non-printing portions being formed with at least two concavities and convexities respectively and arranged at regular intervals on the other side of the upper part of the printing plate.
摘要:
Disclosed is an intaglio printing plate including: a pattern portion where a to-be-printed pattern is located; a non-pattern portion corresponding to a remaining area other than the pattern portion; and a supplementary pattern portion having a repetitive pattern with a predetermined form, wherein at least a part of the pattern portion is divided by a pattern structure that is formed by the supplementary pattern portion.
摘要:
Provided is a method of fabricating an organic thin film transistor (OTFT) using surface energy control. The method changes a polarity of a gate insulating layer to a polarity of a semiconductor channel layer to be formed on the gate insulating layer by controlling surface energy of the gate insulating layer, thereby promoting growth of the semiconductor channel layer on the gate insulating layer. According to the method, the interface characteristics between the gate insulating layer and the semiconductor channel layer are improved, and thus it is possible to implement an OTFT that can minimize leakage current and has high field effect mobility and low turn-on voltage.
摘要:
Provided is an insulating layer in which an inorganic material is added to an organic polymer to thereby improve the insulating properties, an organic thin film transistor using the insulating layer, and a method of fabricating the organic thin film transistor. An insulating layer for an organic thin film transistor including a vinyl polymer and an inorganic material is provided. Here, a weight ratio of the vinyl polymer to the inorganic material may be in the range of 1:0.0001 to 1:0.5. Accordingly, it is possible to fabricate a thin film at low temperature and, further, to fabricate an insulating layer having a high-dielectric constant, not affecting other layers formed in the previous processes during the formation of the insulating layer.
摘要:
A method of fabricating a semiconductor device includes forming a via hole in a semiconductor substrate, forming an isolation layer on an inner side of the via hole, forming a diffusion barrier layer over an upper portion of the semiconductor substrate and the inner side of the via hole where the isolation layer is formed, arranging a solvent, which contains electrically charged metal particles, on the semiconductor substrate where the diffusion barrier layer is formed, and filling the via hole with the metal particles by moving the metal particles using applied external force. The applied external force said includes a voltage causing an electric current to flow between the semiconductor substrate and the solvent, an electrical field applied between the semiconductor substrate and the solvent, or a magnetic field applied between the semiconductor substrate and the solvent.
摘要:
Provided is a method of fabricating an organic thin film transistor (OTFT) using surface energy control. The method changes a polarity of a gate insulating layer to a polarity of a semiconductor channel layer to be formed on the gate insulating layer by controlling surface energy of the gate insulating layer, thereby promoting growth of the semiconductor channel layer on the gate insulating layer. According to the method, the interface characteristics between the gate insulating layer and the semiconductor channel layer are improved, and thus it is possible to implement an OTFT that can minimize leakage current and has high field effect mobility and low turn-on voltage.
摘要:
A surface treatment method of an FRP substrate is provided. According to the method, an FRP substrate that is less deformed than a conventional flexible substrate material is used, and surface roughness, which is a drawback of the FRP substrate, is improved so that it may be applied to the fabrication of a device. In order to reduce the surface roughness of an FRP substrate, the FRP substrate is coated with an organic insulating solution and thereby planarized. Due to the reduced deformation and superior flatness, failures occurring due to misalignment in a photolithography process may be prevented.
摘要:
Provided is a display panel comprised of a white color organic luminescent element and a color filter for full color implementation, wherein a substrate in which an organic luminescent element is formed and a color filter are assembled and fixed to face each other with an adhesive pattern therebetween, and liquid oil is filled between the color filter and the substrate inside of the adhesive pattern so as to block external moisture or oxygen, so that deterioration of luminous characteristics due to the external moisture or oxygen may be prevented by encapsulating the organic luminescent element and the color filter with the liquid oil, which leads to enhance reliability and stability of the element, and also allows the encapsulation process to be performed with relatively simple steps and low cost.
摘要:
Provided are a composition for thermosetting organic polymeric gate insulating layer and an organic thin film transistor using the same. The composition for thermosetting organic polymeric gate insulating layer contains a thermosetting material in polyvinyl phenol as an organic polymeric gate insulating layer material, to improve a chemical resistance and an insulating property, and an organic thin film transistor includes a thermosetting organic polymeric gate insulating layer formed of the composition. The composition for thermosetting organic polymeric gate insulating layer endows an organic polymer with a thermosetting property, thereby being capable of improving the chemical resistance and the insulating property as well as of forming a layer having a device property improved.