公开(公告)号：US20140138703A1

公开(公告)日：2014-05-22

申请号：US14126047

申请日：2012-05-15

申请人： Adrian Stefan Avramescu ,  Ines Pietzonka ,  Dimitri Dini

发明人： Adrian Stefan Avramescu ,  Ines Pietzonka ,  Dimitri Dini

IPC分类号： H01S5/22 ,  H01L29/20 ,  H01L21/02 ,  H01L29/205

CPC分类号： H01S5/22 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/02647 ,  H01L29/2003 ,  H01L29/205

摘要： An optoelectronic semiconductor body has a substrate that includes a strained layer that is applied to the substrate in a first epitaxy step. The strained layer includes at least one recess formed vertically in the strained layer. In a second epitaxy step, a further layer applied to the strained layer. The further layer fills the at least one recess and covers the strained layer at least in some areas.

摘要翻译： 光电半导体本体具有包括在第一外延步骤中施加到衬底的应变层的衬底。 应变层包括在应变层中垂直形成的至少一个凹部。 在第二外延步骤中，施加到应变层的另一层。 另外的层填充至少一个凹部并且至少在一些区域中覆盖应变层。

公开(公告)号：US09478945B2

公开(公告)日：2016-10-25

申请号：US14126047

申请日：2012-05-15

申请人： Adrian Stefan Avramescu ,  Ines Pietzonka ,  Dimitri Dini

发明人： Adrian Stefan Avramescu ,  Ines Pietzonka ,  Dimitri Dini

IPC分类号： H01L29/49 ,  H01S5/22 ,  H01L21/02 ,  H01L29/20 ,  H01L29/205

CPC分类号： H01S5/22 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/02647 ,  H01L29/2003 ,  H01L29/205

摘要： An optoelectronic semiconductor body has a substrate that includes a strained layer that is applied to the substrate in a first epitaxy step. The strained layer includes at least one recess formed vertically in the strained layer. In a second epitaxy step, a further layer applied to the strained layer. The further layer fills the at least one recess and covers the strained layer at least in some areas.

摘要翻译： 光电半导体本体具有包括在第一外延步骤中施加到衬底的应变层的衬底。 应变层包括在应变层中垂直形成的至少一个凹部。 在第二外延步骤中，施加到应变层的另一层。 另外的层填充至少一个凹部并且至少在一些区域中覆盖应变层。

公开(公告)号：US20140064311A1

公开(公告)日：2014-03-06

申请号：US14006472

申请日：2012-04-18

申请人： Christoph Eichler ,  Dimitri Dini ,  Alfred Lell

发明人： Christoph Eichler ,  Dimitri Dini ,  Alfred Lell

IPC分类号： H01S5/22

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0217 ,  H01S5/0287 ,  H01S5/065 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/1017 ,  H01S5/1064 ,  H01S5/2022 ,  H01S5/2031 ,  H01S5/2059 ,  H01S5/2215 ,  H01S5/2218 ,  H01S5/2219 ,  H01S5/2222 ,  H01S5/2231 ,  H01S5/2275 ,  H01S5/34326 ,  H01S5/34333 ,  H01S2301/166 ,  H01S2301/176 ,  H01S2301/185

摘要： A laser light source having a ridge waveguide structure includes a semi-conductor layer sequence having a number of functional layers and an active region that is suitable for generating laser light during operation At least one of the functional layers is designed as a ridge of the ridge waveguide structure The semiconductor layer sequence has a mode filter structure that is formed as part of the ridge and/or along a main extension plane of the functional layers next to the ridge and/or perpendicular to the main extension plane of the functional layers below the ridge.

摘要翻译： 具有脊波导结构的激光光源包括具有多个功能层的半导体层序列和适用于在操作期间产生激光的有源区域。至少一个功能层被设计为脊的脊 波导结构半导体层序列具有模式滤波器结构，其形成为脊的一部分和/或沿着与脊相邻的功能层的主延伸面和/或垂直于功能层的主延伸面垂直于主延伸面 岭。

公开(公告)号：US08369370B2

公开(公告)日：2013-02-05

申请号：US12809748

申请日：2008-12-17

申请人： Alfred Lell ,  Christoph Eichler ,  Wolfgang Schmid ,  Soenke Tautz ,  Wolfgang Reill ,  Dimitri Dini

发明人： Alfred Lell ,  Christoph Eichler ,  Wolfgang Schmid ,  Soenke Tautz ,  Wolfgang Reill ,  Dimitri Dini

IPC分类号： H01S5/00

CPC分类号： H01S5/1082 ,  H01S5/0078 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0286 ,  H01S5/1017 ,  H01S5/105 ,  H01S5/1078 ,  H01S5/1092 ,  H01S5/22 ,  H01S2301/02 ,  H01S2301/166

摘要： A laser light source including a semiconductor layer sequence having an active region and a radiation coupling-out area having a first partial region and a second partial region different than the first partial region, and a filter structure. The active region generates, during operation, coherent first electromagnetic radiation having a first wavelength range and incoherent second electromagnetic radiation having a second wavelength range. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first and second partial regions. The second wavelength range includes the first wavelength range, and the filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction.

摘要翻译： 包括具有有源区的半导体层序列和具有与第一部分区域不同的第一部分区域和第二部分区域的辐射耦合区域的激光源，以及滤波器结构。 有源区域在操作期间产生具有第一波长范围和具有第二波长范围的非相干第二电磁辐射的相干第一电磁辐射。 相干第一电磁辐射沿着发射方向由第一部分区域发射，并且非相干的第二电磁辐射由第一和第二部分区域发射。 第二波长范围包括第一波长范围，并且滤波器结构至少部分地衰减沿着发射方向由有源区发射的非相干的第二电磁辐射。

公开(公告)号：US09048631B2

公开(公告)日：2015-06-02

申请号：US14006472

申请日：2012-04-18

申请人： Christoph Eichler ,  Dimitri Dini ,  Alfred Lell

发明人： Christoph Eichler ,  Dimitri Dini ,  Alfred Lell

IPC分类号： H01S5/22 ,  H01S5/065 ,  B82Y20/00 ,  H01S5/10 ,  H01S5/223 ,  H01S5/227 ,  H01S5/02 ,  H01S5/028 ,  H01S5/20 ,  H01S5/343

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0217 ,  H01S5/0287 ,  H01S5/065 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/1017 ,  H01S5/1064 ,  H01S5/2022 ,  H01S5/2031 ,  H01S5/2059 ,  H01S5/2215 ,  H01S5/2218 ,  H01S5/2219 ,  H01S5/2222 ,  H01S5/2231 ,  H01S5/2275 ,  H01S5/34326 ,  H01S5/34333 ,  H01S2301/166 ,  H01S2301/176 ,  H01S2301/185

摘要： A laser light source having a ridge waveguide structure includes a semi-conductor layer sequence having a number of functional layers and an active region that is suitable for generating laser light during operation. At least one of the functional layers is designed as a ridge of the ridge waveguide structure. The semiconductor layer sequence has a mode filter structure that is formed as part of the ridge and/or along a main extension plane of the functional layers next to the ridge and/or perpendicular to the main extension plane of the functional layers below the ridge.

摘要翻译： 具有脊波导结构的激光光源包括具有多个功能层的半导体层序列和适用于在操作期间产生激光的有源区域。 功能层中的至少一个被设计为脊形波导结构的脊。 半导体层序列具有模式滤波器结构，其形成为脊的一部分和/或沿功能层的主延伸平面形成在脊附近和/或垂直于脊下方的功能层的主延伸平面。

公开(公告)号：US20130148683A1

公开(公告)日：2013-06-13

申请号：US13730363

申请日：2008-12-17

申请人： Alfred Lell ,  Christoph Eichler ,  Wolfgang Schmid ,  Soenke Tautz ,  Wolfgang Reill ,  Dimitri Dini

发明人： Alfred Lell ,  Christoph Eichler ,  Wolfgang Schmid ,  Soenke Tautz ,  Wolfgang Reill ,  Dimitri Dini

IPC分类号： H01S5/028 ,  H01L33/44

CPC分类号： H01S5/1082 ,  H01S5/0078 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0286 ,  H01S5/1017 ,  H01S5/105 ,  H01S5/1078 ,  H01S5/1092 ,  H01S5/22 ,  H01S2301/02 ,  H01S2301/166

摘要： A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).

公开(公告)号：US08879596B2

公开(公告)日：2014-11-04

申请号：US13515024

申请日：2010-11-12

申请人： Dimitri Dini ,  Marc Schillgalies

发明人： Dimitri Dini ,  Marc Schillgalies

IPC分类号： H01S5/02 ,  H01L21/78 ,  H01S5/323 ,  H01S5/022 ,  H01S5/042 ,  H01S5/22

CPC分类号： H01S5/32341 ,  H01S5/0201 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/2201 ,  H01S2304/12

摘要： A semiconductor laser includes a semiconductor body having an active region that generates radiation and a ridge-shaped region, wherein the ridge-shaped region has a longitudinal axis running along an emission direction, a central axis of the semiconductor body runs in the emission direction and the longitudinal axis is arranged in a manner offset with respect to the central axis in a transverse direction.

摘要翻译： 半导体激光器包括具有产生辐射的有源区域和脊形区域的半导体本体，其中脊形区域具有沿发射方向延伸的纵向轴线，半导体主体的中心轴线沿着发射方向延伸，并且 纵向轴线以横向相对于中心轴线偏移的方式布置。

公开(公告)号：US20120287956A1

公开(公告)日：2012-11-15

申请号：US13515024

申请日：2010-11-12

申请人： Dimitri Dini ,  Marc Schillgalies

发明人： Dimitri Dini ,  Marc Schillgalies

IPC分类号： H01S5/02 ,  H01L21/78

CPC分类号： H01S5/32341 ,  H01S5/0201 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/2201 ,  H01S2304/12

摘要： A semiconductor laser includes a semiconductor body having an active region that generates radiation and a ridge-shaped region, wherein the ridge-shaped region has a longitudinal axis running along an emission direction, a central axis of the semiconductor body runs in the emission direction and the longitudinal axis is arranged in a manner offset with respect to the central axis in a transverse direction.

摘要翻译： 半导体激光器包括具有产生辐射的有源区域和脊形区域的半导体本体，其中脊形区域具有沿发射方向延伸的纵向轴线，半导体主体的中心轴线沿着发射方向延伸，并且 纵向轴线以横向相对于中心轴线偏移的方式布置。

公开(公告)号：US08964808B2

公开(公告)日：2015-02-24

申请号：US13730363

申请日：2008-12-17

申请人： Alfred Lell ,  Christoph Eichler ,  Wolfgang Schmid ,  Soenke Tautz ,  Wolfgang Reill ,  Dimitri Dini

发明人： Alfred Lell ,  Christoph Eichler ,  Wolfgang Schmid ,  Soenke Tautz ,  Wolfgang Reill ,  Dimitri Dini

IPC分类号： H01S5/00 ,  H01S5/028 ,  H01S5/10

CPC分类号： H01S5/1082 ,  H01S5/0078 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0286 ,  H01S5/1017 ,  H01S5/105 ,  H01S5/1078 ,  H01S5/1092 ,  H01S5/22 ,  H01S2301/02 ,  H01S2301/166

摘要： A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).

摘要翻译： 激光光源特别包括具有有源区（45）和辐射耦合输出区（12）的半导体层序列（10），辐射耦合输出区域（12）具有不同的第一部分区域（121）和第二部分区域（122） 以及滤波器结构（5），其中所述有源区（45）在操作期间产生具有第一波长范围和具有第二波长范围的非相干第二电磁辐射（52）的相干第一电磁辐射（51） 相干第一电磁辐射（51）沿着发射方向（90）由第一部分区域（121）发射，非相干的第二电磁辐射（52）由第一部分区域（121）和第二部分区域 （122），所述第二波长范围包括所述第一波长范围，并且所述滤波器结构（5）至少部分地衰减由所述有源区沿着所述发射方向发射的非相干的第二电磁辐射（52） （90）。

公开(公告)号：US20120039072A1

公开(公告)日：2012-02-16

申请号：US13141078

申请日：2009-10-19

申请人： Alfred Lell ,  Sönke Tautz ,  Uwe Strauss ,  Martin Rudolf Behringer ,  Stefanie Brüninghoff ,  Dimitri Dini ,  Dominik Eisert ,  Christoph Eichler

发明人： Alfred Lell ,  Sönke Tautz ,  Uwe Strauss ,  Martin Rudolf Behringer ,  Stefanie Brüninghoff ,  Dimitri Dini ,  Dominik Eisert ,  Christoph Eichler

IPC分类号： H01S5/06 ,  H01S5/40

CPC分类号： H04N9/3161 ,  H01S5/005 ,  H01S5/02292 ,  H01S5/4093 ,  H04N9/3129

摘要： In at least one embodiment of the light source (1), the latter includes at least one semiconductor laser (2), which is designed to emit a primary radiation (P) of a wavelength of between 360 nm and 485 nm inclusive. Furthermore, the light source (1) comprises at least one conversion medium (3), which is arranged downstream of the semiconductor laser (2) and is designed to convert at least part of the primary radiation (P) into secondary radiation (S) of a different, greater wavelength than the primary radiation (P). The radiation (R) emitted by the light source (1) here displays an optical coherence length which amounts to at most 50 μm.

摘要翻译： 在光源（1）的至少一个实施例中，后者包括至少一个半导体激光器（2），其设计成发射波长在360nm和485nm之间的初级辐射（P）。 此外，光源（1）包括至少一个转换介质（3），其设置在半导体激光器（2）的下游，并被设计成将至少一部分初级辐射（P）转换成次级辐射（S） 具有与初级辐射（P）不同的更大的波长。 由光源（1）发射的辐射（R）在这里显示出至多50μm的光学相干长度。