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    Logic element, and integrated circuit or field programmable gate array
    1.
    发明授权
    Logic element, and integrated circuit or field programmable gate array 有权
    逻辑元件，集成电路或现场可编程门阵列

    公开(公告)号：US08405124B2

    公开(公告)日：2013-03-26

    申请号：US12350329

    申请日：2009-01-08

    Applicant: Siegfried Friedrich Karg ,  Gerhard Ingmar Meijer

    Inventor： Siegfried Friedrich Karg ,  Gerhard Ingmar Meijer

    IPC: H01L29/66

    CPC classification number: H03K19/1778 ,  H01L27/11803 ,  H03K19/17728

    Abstract: A complementary logic element including first and second transistor elements. The first and second gate electrodes of the two transistor elements are electrically parallel to form a common gate. Both the coupling layers of the first and the second transistor element include a resistance switching material, a conductivity of which may be altered by causing an ion concentration to alter if an electrical voltage signal of an appropriate polarity is applied. The first and second transistor elements also include an ion conductor layer that is capable of accepting ions from the coupling layer and of releasing ions into the coupling layer. The coupling layers and ion conductor layers are such that the application of an electrical signal of a given polarity to the gate enhances the electrical conductivity of the first coupling layer and diminishes the electrical conductivity of the second, or vice versa.

    Abstract translation: 互补逻辑元件，包括第一和第二晶体管元件。 两个晶体管元件的第一和第二栅极电极并联以形成公共栅极。 第一和第二晶体管元件的耦合层都包括电阻切换材料，如果施加了适当极性的电压信号，其电导率可以通过使离子浓度改变而改变。 第一和第二晶体管元件还包括能够接受来自耦合层的离子并将离子释放到耦合层中的离子导体层。 耦合层和离子导体层使得向栅极施加给定极性的电信号增强了第一耦合层的电导率并且减小了第二耦合层的电导率，反之亦然。

    Programmable device
    2.
    发明授权
    Programmable device 有权
    可编程器件

    公开(公告)号：US08139389B2

    公开(公告)日：2012-03-20

    申请号：US13040429

    申请日：2011-03-04

    Applicant: Siegfried Friedrich Karg ,  Gerhard Ingmar Meijer

    Inventor： Siegfried Friedrich Karg ,  Gerhard Ingmar Meijer

    IPC: G11C11/22

    CPC classification number: H01L27/226 ,  G11C11/161 ,  G11C11/1675 ,  H01L29/66984 ,  H01L43/08 ,  H03K19/177

    Abstract: A programmable device including a source-drain-gate structure. The device includes two programming electrodes and an antiferromagnetic multiferroic material between the two programming electrodes for switching the spontaneous polarization between a first spontaneous polarization direction and a second spontaneous polarization direction. The programmable device further includes a ferromagnetic material, which is in immediate contact with the multiferroic material. Magnetization of the ferromagnetic material is switchable by a transition between the first switching state and the second switching state of the multiferroic material by an exchange coupling between electronic states of the multiferroic material and the ferromagnetic material. The programmable device also includes means for determining a direction of the magnetization of the ferromagnetic material. A spin valve effect is used for causing an electrical resistance between the source and the drain electrode.

    Abstract translation: 一种包括源极 - 漏极 - 栅极结构的可编程器件。 该装置包括两个编程电极和两个编程电极之间的反铁磁性多铁性材料，用于在第一自发极化方向和第二自发极化方向之间切换自发极化。 可编程装置还包括与多铁性材料立即接触的铁磁材料。 铁磁材料的磁化可以通过多铁材料的电子状态与铁磁材料之间的交换耦合，通过多铁材料的第一开关状态和第二开关状态之间的转变来切换。 可编程装置还包括用于确定铁磁材料的磁化方向的装置。 自旋阀效应用于引起源极和漏极之间的电阻。

    PROGRAMMABLE DEVICE
    4.
    发明申请
    PROGRAMMABLE DEVICE 有权
    可编程器件

    公开(公告)号：US20110149648A1

    公开(公告)日：2011-06-23

    申请号：US13040429

    申请日：2011-03-04

    Applicant: Siegfried Friedrich Karg ,  Gerhard Ingmar Meijer

    Inventor： Siegfried Friedrich Karg ,  Gerhard Ingmar Meijer

    IPC: G11C11/14 ,  H01L29/82

    CPC classification number: H01L27/226 ,  G11C11/161 ,  G11C11/1675 ,  H01L29/66984 ,  H01L43/08 ,  H03K19/177

    Abstract: A programmable device including a source-drain-gate structure. The device includes two programming electrodes and an antiferromagnetic multiferroic material between the two programming electrodes for switching the spontaneous polarization between a first spontaneous polarization direction and a second spontaneous polarization direction. The programmable device further includes a ferromagnetic material, which is in immediate contact with the multiferroic material. Magnetization of the ferromagnetic material is switchable by a transition between the first switching state and the second switching state of the multiferroic material by an exchange coupling between electronic states of the multiferroic material and the ferromagnetic material. The programmable device also includes means for determining a direction of the magnetization of the ferromagnetic material. A spin valve effect is used for causing an electrical resistance between the source and the drain electrode.

    Abstract translation: 一种包括源极 - 漏极 - 栅极结构的可编程器件。 该装置包括两个编程电极和两个编程电极之间的反铁磁性多铁性材料，用于在第一自发极化方向和第二自发极化方向之间切换自发极化。 可编程装置还包括与多铁性材料立即接触的铁磁材料。 铁磁材料的磁化可以通过多铁材料的电子状态与铁磁材料之间的交换耦合，通过多铁材料的第一开关状态和第二开关状态之间的转变来切换。 可编程装置还包括用于确定铁磁材料的磁化方向的装置。 自旋阀效应用于引起源极和漏极之间的电阻。

    MULTI-LAYER DEVICE WITH SWITCHABLE RESISTANCE
    7.
    发明申请
    MULTI-LAYER DEVICE WITH SWITCHABLE RESISTANCE 审中-公开
    具有可切换电阻的多层设备

    公开(公告)号：US20080011996A1

    公开(公告)日：2008-01-17

    申请号：US11456591

    申请日：2006-07-11

    Applicant: Johannes Georg Bednorz ,  Walter Heinrich Riess ,  Siegfried F. Karg ,  Gerhard Ingmar Meijer ,  German Hammerl

    Inventor： Johannes Georg Bednorz ,  Walter Heinrich Riess ,  Siegfried F. Karg ,  Gerhard Ingmar Meijer ,  German Hammerl

    IPC: H01L29/02

    CPC classification number: H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1625 ,  H01L45/165 ,  H01L45/1658

    Abstract: The present invention provides a microelectronic device comprising a resistance structure including a plurality of programmable resistance layers and at least one intermediate layer such that an intermediate layer is placed between two programmable resistance layers. The programmable resistance layers can be individually doped or may consist of different materials. Each programmable resistance layer may be optimized for a specific application. The microelectronic device can be used as a programmable resistor or a memory cell as it exhibits switchable electrical resistance and does not require a time-consuming conditioning process.

    Abstract translation: 本发明提供了一种微电子器件，其包括电阻结构，该电阻结构包括多个可编程电阻层和至少一个中间层，使得中间层位于两个可编程电阻层之间。 可编程电阻层可以单独掺杂或由不同的材料组成。 可针对特定应用优化每个可编程电阻层。 微电子器件可以用作可编程电阻器或存储器单元，因为其具有可切换的电阻并且不需要耗时的调节处理。

    NONVOLATILE PROGRAMMABLE RESISTOR MEMORY CELL
    8.
    发明申请
    NONVOLATILE PROGRAMMABLE RESISTOR MEMORY CELL 失效
    非易失性可编程电阻器存储器单元

    公开(公告)号：US20080001172A1

    公开(公告)日：2008-01-03

    申请号：US11427820

    申请日：2006-06-30

    Applicant: Siegfried F. Karg ,  Gerhard Ingmar Meijer

    Inventor： Siegfried F. Karg ,  Gerhard Ingmar Meijer

    IPC: H01L29/739

    CPC classification number: H01L45/08 ,  H01L45/146 ,  H01L45/147

    Abstract: A nonvolatile programmable resistance memory cell comprising a high-mobility ion conductor and a method for fabricating the same are provides. The memory cell comprises of a first and second electrode and a reversible and persistent programmable resistance structure connecting the first and second electrode. The resistance is modifiable by altering the ionic distribution of a high-mobility oxygen ion conductor region. As an alternate embodiment, the memory cell further includes a transition-metal oxide region.

    Abstract translation: 提供了包括高迁移率离子导体的非易失性可编程电阻存储单元及其制造方法。 存储单元包括第一和第二电极以及连接第一和第二电极的可逆且持久的可编程电阻结构。 通过改变高迁移率氧离子导体区域的离子分布可以改变电阻。 作为替代实施例，存储单元还包括过渡金属氧化物区域。

    Method for manufacturing an optical device with a defined total device stress
    9.
    发明授权
    Method for manufacturing an optical device with a defined total device stress 失效
    具有规定的总装置应力的光学装置的制造方法

    公开(公告)号：US06768857B2

    公开(公告)日：2004-07-27

    申请号：US10141665

    申请日：2002-05-07

    Applicant: Gian-Luca Bona ,  Roland Germann ,  Ingmar Meijer ,  Bert Offrein ,  Huub L Salemink ,  Dorothea W Wiesmann

    Inventor： Gian-Luca Bona ,  Roland Germann ,  Ingmar Meijer ,  Bert Offrein ,  Huub L Salemink ,  Dorothea W Wiesmann

    IPC: G02B610

    CPC classification number: G02B6/132 ,  G02B6/105 ,  G02B2006/12169

    Abstract: A method for manufacturing an optical device with a defined total device stress, birefringence and optical polarization dependence is disclosed. The method comprises first providing a tower cladding layer of an amorphous material with a first refractive index and then providing above the lower cladding layer an upper cladding layer of an amorphous material with a second refractive index. An optical waveguide core comprising an amorphous material having a third refractive index (larger than the first refractive index and the second refractive index) is provided between the lower and the upper cladding layers. The upper cladding layer is thermally annealed by keeping the upper cladding layer at a first temperature, then raising the temperature to a second temperature, maintaining the second temperature for an annealing time period, and lowering the temperature to a third temperature, after which the temperature is lowered to a fourth temperature.

    Abstract translation: 公开了一种制造具有规定的总装置应力，双折射和光学偏振依赖性的光学装置的方法。 该方法包括首先提供具有第一折射率的非晶材料的塔包层，然后在下包层上方提供具有第二折射率的非晶材料的上包层。 包括具有第三折射率（大于第一折射率和第二折射率）的非晶材料的光波导芯设置在下包层和上包层之间。 通过将上部包层保持在第一温度而将上部包层热退火，然后将温度升高到第二温度，将第二温度保持退火时间，并将温度降低到第三温度，之后温度 降至第四温度。

    Programmable element, and memory device or logic circuit
    10.
    发明授权
    Programmable element, and memory device or logic circuit 有权
    可编程元件，存储器件或逻辑电路

    公开(公告)号：US08470676B2

    公开(公告)日：2013-06-25

    申请号：US12350469

    申请日：2009-01-08

    Applicant: Siegfried F. Karg ,  Gerhard Ingmar Meijer

    Inventor： Siegfried F. Karg ,  Gerhard Ingmar Meijer

    IPC: H01L21/8236

    CPC classification number: H01L29/24 ,  H01L29/78 ,  H01L45/08 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/146 ,  H01L45/147

    Abstract: A multi-terminal programmable element. The programmable element includes a source electrode and a drain electrode on a base. The programmable element includes reference voltage contact that is not in contact with the source or drain electrode. The base includes a transition-metal oxide with oxygen vacancies for drifting under an applied electric field. Further, materials of the source electrode and the base are selected such that an interface of a source and/or drain electrode material and the transition metal oxide base material forms an energy barrier for electron injection from the electrode into the base material. The energy barrier has a height that depends on an oxygen vacancy concentration of the base material. Four non-volatile states are programmable into the programmable element.

    Abstract translation: 多端子可编程元件。 可编程元件包括基极上的源电极和漏电极。 可编程元件包括不与源极或漏电极接触的参考电压接触。 基底包括具有氧空位的过渡金属氧化物，用于在施加的电场下漂移。 此外，源极和基极的材料被选择为使得源极和/或漏极电极材料和过渡金属氧化物基底材料的界面形成用于从电极注入基底材料的电子注入的能量势垒。 能量势垒的高度取决于基材的氧空位浓度。 四个非易失性状态可编程到可编程元件中。

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