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22 条记录 (耗时 0.014 秒)

    Variable lateral quantum confinement transistor
    2.
    依法登记的发明
    Variable lateral quantum confinement transistor 失效
    可变横向量子限制晶体管

    公开(公告)号：USH1570H

    公开(公告)日：1996-08-06

    申请号：US44783

    申请日：1993-03-31

    申请人： Robert A. Lux ,  James F. Harvey

    发明人： Robert A. Lux ,  James F. Harvey

    IPC分类号： H01L29/66 ,  H01L29/06

    CPC分类号： B82Y10/00 ,  H01L29/66977

    摘要： A quantum interference device in the form of a variable lateral confinement resonant tunneling transistor having a quantum waveguide structure including a primary current transmission path defined by a region between source and drain electrodes and where there is a resonance region therebetween in which quantum interference of tunneling wave functions establish a resonance tunneling condition that extends beyond the primary current path. Upon the application of a voltage across the drain and source electrodes, a tunneling current can be made to flow. A gate electrode formed on the quantum well structure remote from the primary current transmission path includes a variable depletion region thereunder or an electrostatic pinch off region, the size of which is a function of the magnitude of the bias voltage applied thereto. The size of the depletion region or the pinch off region affects the dimensions of the resonance region and accordingly the current flow between the source and drain electrodes as a result of a change in the energy and momentum conditions for resonance tunneling.

    摘要翻译： 一种具有量子波导结构形式的量子干涉装置，该量子波导结构包括由源极和漏极之间的区域限定的初级电流传输路径，其中在其间存在隧道波的量子干涉 功能建立了超越初级电流路径的谐振隧道状态。 当在漏极和源极之间施加电压时，可以使隧道电流流动。 形成在远离初级电流传输路径的量子阱结构上的栅电极包括其下的可变耗尽区或静电夹断区，其大小是施加到其上的偏置电压的大小的函数。 耗尽区域或夹断区域的大小由于谐振隧道的能量和动量条件的变化而影响谐振区域的尺寸，并因此影响源极和漏极之间的电流。

    Pilot helmet mounted CIG display with eye coupled area of interest
    3.
    发明授权
    Pilot helmet mounted CIG display with eye coupled area of interest 失效
    驾驶员头盔安装CIG显示屏与眼睛耦合的兴趣区域

    公开(公告)号：US4348186A

    公开(公告)日：1982-09-07

    申请号：US104521

    申请日：1979-12-17

    申请人： James F. Harvey ,  Walter S. Chambers ,  John J. Kulik

    发明人： James F. Harvey ,  Walter S. Chambers ,  John J. Kulik

    IPC分类号： B29C65/04 ,  G09B9/30 ,  G09B9/08

    CPC分类号： G09B9/307

    摘要： A system that uses the computer more efficiently in computer generated image displays by allocating priority status to the area being viewed by the observer while progressively diminishing the resolution requirements of the displayed scene toward its perimeter. The video signal corresponds to the orientation of the observer's head which is ascertained by head and eye trackers, and provides a variable level of detail that tends to match the visual acuity of the human eye.

    摘要翻译： 在计算机生成的图像显示器中更有效地使用计算机的系统，其通过将优先级状态分配给观察者正在观看的区域，同时逐渐减少所显示的场景对其周边的分辨率要求。 视频信号对应于由头部和眼睛跟踪器确定的观察者头部的方向，并且提供趋向于匹配人眼的视敏度的可变水平的细节。

    Negative differential resistance device based on tunneling through microclusters, and method therefor
    5.
    发明授权
    Negative differential resistance device based on tunneling through microclusters, and method therefor 失效
    基于通过微型集群隧穿的负差动电阻装置及其方法

    公开(公告)号：US06239450B1

    公开(公告)日：2001-05-29

    申请号：US09231429

    申请日：1999-01-14

    申请人： James F. Harvey ,  Robert A. Lux ,  Raphael Tsu

    发明人： James F. Harvey ,  Robert A. Lux ,  Raphael Tsu

    IPC分类号： H01L2100

    CPC分类号： B82Y10/00 ,  H01L29/32 ,  H01L29/882

    摘要： A solid state electronic device exhibiting negative differential resistance is fabricated by depositing a thin layer of amorphous silicon on a single crystal substrate, doped N+. The amorphous silicon is simultaneously crystallized and oxidized in a dry N2 and O2 mixture. The result is a layer of amorphous SiO2 surrounding microclusters of crystalline silicon. A layer of polycrystalline silicon is deposited to a thickness of approximately 0.5 micron. Ohmic metal contacts are made to the top and bottom. These active layers are isolated by insulating SiO2. A bias voltage applied between the metal contacts results in negative differential resistance due to tunneling through resonant energy levels in microclusters.

    摘要翻译： 通过在掺杂N +的单晶衬底上沉积非晶硅薄层来制造显示负差分电阻的固态电子器件。 非晶硅同时结晶并在干燥的N 2和O 2混合物中氧化。 结果是结晶硅周围的微结构的非晶SiO 2层。 一层多晶硅沉积到约0.5微米的厚度。 欧姆金属触点制成顶部和底部。 这些有源层通过绝缘SiO 2来隔离。 施加在金属触点之间的偏置电压导致由于在微型集群中通过谐振能级的隧穿而导致的负差分电阻。

    Fluorescence quenching technique for scanning visual systems
    6.
    发明授权
    Fluorescence quenching technique for scanning visual systems 失效
    用于扫描视觉系统的荧光淬灭技术

    公开(公告)号：US4460828A

    公开(公告)日：1984-07-17

    申请号：US373756

    申请日：1982-04-30

    申请人： James F. Harvey

    发明人： James F. Harvey

    IPC分类号： G09B9/32 ,  G03B21/00

    CPC分类号： G09B9/326

    摘要： By using a fluorescer on the viewing surface of a visual screen and illumting the screen with ultra-violet light, a bright display of the scene is achieved when the laser scan system is operated in the negative mode to quench the fluorescence at spots on the screen that correspond to darker areas in the scene.

    摘要翻译： 通过在视觉屏幕的观察表面上使用荧光剂并用紫外线照射屏幕，当激光扫描系统以负模式操作以在屏幕上的点熄灭荧光时，实现了场景的明亮显示 这对应于场景中较暗的区域。

    Negative differential resistance device based on tunneling through microclusters, and method therefor
    10.
    发明授权
    Negative differential resistance device based on tunneling through microclusters, and method therefor 失效
    基于通过微型集群隧穿的负差动电阻装置及其方法

    公开(公告)号：US5895934A

    公开(公告)日：1999-04-20

    申请号：US915547

    申请日：1997-08-13

    申请人： James F. Harvey ,  Robert A. Lux ,  Raphael Tsu

    发明人： James F. Harvey ,  Robert A. Lux ,  Raphael Tsu

    IPC分类号： H01L29/32 ,  H01L29/88

    CPC分类号： B82Y10/00 ,  H01L29/32 ,  H01L29/882

    摘要： A solid state electronic device exhibiting negative differential resistances fabricated by depositing a thin layer of amorphous silicon on a single crystal substrate, doped N.sup.+. The amorphous silicon is simultaneously crystallized and oxidized in a dry N.sub.2 and O.sub.2 mixture. The result is a layer of amorphous Sio.sub.2 surrounding microclusters of crystalline silicon. A layer of polycrystalline silicon is deposited to a thickness of approximately 0.5 micron. Ohmic metal contacts are made to the top and bottom. These active layers are isolated by insulating SiO.sub.2. A bias voltage applied between the metal contacts results in negative differential resistance due to tunneling through resonant energy levels in microclusters.

    摘要翻译： 通过在掺杂N +的单晶衬底上沉积非晶硅薄层来制造显示负差分电阻的固态电子器件。 非晶硅同时结晶并在干燥的N 2和O 2混合物中氧化。 结果是结晶硅周围微团簇的无定形Sio2层。 一层多晶硅沉积到约0.5微米的厚度。 欧姆金属触点制成顶部和底部。 这些有源层通过绝缘SiO 2来隔离。 施加在金属触点之间的偏置电压导致由于在微型集群中通过谐振能级的隧穿而导致的负差分电阻。