BLOOD CONDUIT WITH STENT
    1.
    发明申请

    公开(公告)号:US20200046487A1

    公开(公告)日:2020-02-13

    申请号:US16340645

    申请日:2017-10-10

    申请人: Jeng WEI Tai-Yen SUN

    发明人: Jeng WEI

    IPC分类号: A61F2/07

    摘要: A blood conduit with stent has a flexible conduit body and an expandable stent structure. The conduit body has a first opening end through which only an inflow of a blood enters and a second opening end through which only an outflow of the blood leaves. The stent structure includes a plurality of threads adhered to the conduit body and expands in directions intersecting an axial direction of the conduit body. A boundary of one of the threads of the stent structure closest to the second opening end is away from the second opening end with a predetermined distance, thereby preventing blood back flow into the false lumen via a new tear.

    PREDICTIVE CODING METHOD FOR CODING TEXTURE OF IMAGE
    2.
    发明申请
    PREDICTIVE CODING METHOD FOR CODING TEXTURE OF IMAGE 有权
    用于编码图像纹理的预测编码方法

    公开(公告)号:US20120294545A1

    公开(公告)日:2012-11-22

    申请号:US13415064

    申请日:2012-03-08

    IPC分类号: G06K9/36

    摘要: A predictive coding method for coding intra of frames is revealed. Firstly, an encoder divides an image frame into a plurality of macroblocks. Then the encoder sets predictive coding models corresponding to these macroblocks according to a ratio. The encoder performs predictive coding for coding each macroblock according to the corresponding predictive coding model so as to get and output a coded image. By the present invention, various predictive coding models are set and applied to code the different macroblocks so as to increase predictive coding efficiency. The intra prediction efficiency and image compression efficiency are improved simultaneously.

    摘要翻译: 揭示帧内编码的预测编码方法。 首先,编码器将图像帧划分为多个宏块。 然后,编码器根据比例设置与这些宏块对应的预测编码模型。 编码器根据相应的预测编码模型执行对每个宏块进行编码的预测编码,以获得和输出编码图像。 通过本发明,设置并应用各种预测编码模型来对不同的宏块进行编码,以增加预测编码效率。 帧内预测效率和图像压缩效率同时提高。

    Dynamic voltage scaling scheduling mechanism for sporadic, hard real-time tasks with resource sharing
    3.
    发明授权
    Dynamic voltage scaling scheduling mechanism for sporadic, hard real-time tasks with resource sharing 有权
    动态电压调整机制,用于零星,硬实时任务与资源共享

    公开(公告)号:US08112644B2

    公开(公告)日:2012-02-07

    申请号:US11979780

    申请日:2007-11-08

    IPC分类号: G06F1/26 G06F1/32

    CPC分类号: G06F9/4887 Y02D10/24

    摘要: A dynamic voltage scaling scheduling method executes one of the steps. When one task in the delayed task set requires for being executed, a working voltage required for executing the task is increased, and the task is removed from the delayed task set; when one task in the delayed task set requires for sharing resources, the working voltage required by the task is set as the current working voltage or a larger one in the minimum upper bounds of all the works requiring for sharing resources; and when one task does not belong to the delayed task set, but the waiting time has exceeded the period of the work, the working voltage for executing the task is reduced, and the task is added in the delayed task set.

    摘要翻译: 动态电压调整方法执行其中一个步骤。 当延迟任务集中的一个任务需要执行时,执行任务所需的工作电压就会增加,任务从延迟的任务集中移除; 当延迟任务集中的一个任务需要共享资源时,任务所需的工作电压被设置为当前工作电压,或者在所有需要共享资源的工作的最小上限中设置较大的工作电压; 当一个任务不属于延迟任务集,但等待时间超过工作时间时,执行任务的工作电压就会降低,任务被添加到延迟任务集中。

    Bi-directional read/program non-volatile floating gate memory array, and method of formation
    4.
    发明授权
    Bi-directional read/program non-volatile floating gate memory array, and method of formation 有权
    双向读/写非挥发性浮栅存储器阵列及其形成方法

    公开(公告)号:US07358559B2

    公开(公告)日:2008-04-15

    申请号:US11239791

    申请日:2005-09-29

    IPC分类号: H01L29/788

    摘要: A bi-directional read/program non-volatile memory cell and array is capable of achieving high density. Each memory cell has two spaced floating gates for storage of charges thereon. The cell has spaced apart source/drain regions with a channel therebetween, with the channel having three portions. One of the floating gate is over a first portion; another floating gate is over a second portion, and a gate electrode controls the conduction of the channel in the third portion between the first and second portions. A control gate is connected to each of the source/drain regions, and is also capacitively coupled to the floating gate. The cell programs by hot channel electron injection, and erases by Fowler-Nordheim tunneling of electrons from the floating gate to the gate electrode. Bi-directional read permits the cell to be programmed to store bits, with one bit in each floating gate. An array of such memory cells comprises rows of cells in active regions adjacent to one another separated from one another by the semiconductive substrate material without any isolation material. Cells in the same column have the source/drain region in common, the drain/source region in common and a first and second control gates in each of the trenches in common. Cells in adjacent columns have the source/drain in common and the first control gate in common.

    摘要翻译: 双向读/写非易失性存储单元和阵列能够实现高密度。 每个存储单元具有两个间隔开的浮动栅极,用于在其上存储电荷。 电池具有间隔开的源极/漏极区域,其间具有沟道,沟道具有三个部分。 浮动门之一在第一部分之上; 另一个浮栅位于第二部分之上,栅电极控制第一和第二部分之间的第三部分中的沟道的导通。 控制栅极连接到每个源极/漏极区域,并且还电容耦合到浮动栅极。 通过热通道电子注入的电池程序,并通过Fowler-Nordheim将电子从浮动栅极隧穿到栅电极而擦除。 双向读取允许将单元编程为存储位,每个浮动栅极中有一位。 这种存储单元的阵列包括彼此相邻的活性区域中的细胞排,所述活性区域通过没有任何隔离材料的半导体衬底材料彼此分开。 相同列中的单元具有共同的源极/漏极区域,共同的漏极/源极区域以及每个沟槽中的第一和第二控制栅极共同。 相邻列中的单元具有共同的源极/漏极,第一个控制栅极共同。

    Method Of Making High-Voltage MOS Transistors With Thin Poly Gate
    7.
    发明申请
    Method Of Making High-Voltage MOS Transistors With Thin Poly Gate 审中-公开
    制造具有薄多孔栅极的高压MOS晶体管的方法

    公开(公告)号:US20140273387A1

    公开(公告)日:2014-09-18

    申请号:US13839533

    申请日:2013-03-15

    IPC分类号: H01L29/66

    摘要: A method of forming an MOS transistor by forming a poly gate over and insulated from a substrate, forming a layer of protective insulation material on the poly gate, and then performing a first implant of dopant material into portions of the substrate adjacent the poly gate, wherein the layer of protective insulation material and the poly gate block most or all of the first implant from reaching a portion of the substrate underneath the poly gate. One or more spacers are then formed adjacent the poly gate, followed by a second implant of dopant material into portions of the substrate adjacent to the one or more spacers.

    摘要翻译: 一种形成MOS晶体管的方法,该方法是在多晶硅栅极上形成保护绝缘材料层,然后在邻近多晶硅栅极的基板的第一部分中进行第一次掺杂, 其中所述保护绝缘材料层和所述多晶硅栅极阻挡所述第一注入的大部分或全部到达所述多晶硅栅极下方的所述衬底的一部分。 然后在多晶硅栅极附近形成一个或多个间隔物,随后将掺杂剂材料第二次注入到与该一个或多个间隔物相邻的衬底的部分中。

    Co-crystal compound, method for preparing the same and oxidant of gas generator propellant
    8.
    发明授权
    Co-crystal compound, method for preparing the same and oxidant of gas generator propellant 失效
    共晶化合物,其制备方法和气体发生器推进剂的氧化剂

    公开(公告)号:US08642789B2

    公开(公告)日:2014-02-04

    申请号:US13354993

    申请日:2012-01-20

    申请人: Lee Tu Jeng-Wei Chen

    发明人: Lee Tu Jeng-Wei Chen

    IPC分类号: C07D321/00 C07D493/00

    CPC分类号: C07D323/00

    摘要: A co-crystal compound containing ammonium nitrate and benzo-18-crown-6-ether. Ammonium nitrate and benzo-18-crown-6-ether are used to form the co-crystal compound with hydrogen bonding in a mole ratio of 1:1. A melting point of the co-crystal compound falls within a range of 124˜130° C., and the co-crystal compound can be prepared by an evaporation method or an anti-solvent method. The co-crystal compound comes with a non-hygroscopic property, a low burning rate (7 MPa, 0.58 mm/s) and a high pressure index (n>0.6), which can be used for replacing the oxidizer of a common gas generator propellant.

    摘要翻译: 含有硝酸铵和苯并-18-冠醚-6-醚的共晶体化合物。 使用硝酸铵和苯并-18-冠醚-6-乙醚以摩尔比1:1的氢键形成共晶体化合物。 共晶体化合物的熔点在124〜130℃的范围内,可以通过蒸发法或反溶剂法制备共晶化合物。 共晶化合物具有非吸湿性,低燃烧速率(7MPa,0.58mm / s)和高压指数(n> 0.6),可用于替代普通气体发生器的氧化剂 推进剂。

    Method of separating nitride films from the growth substrates by selective photo-enhanced wet oxidation
    9.
    发明授权
    Method of separating nitride films from the growth substrates by selective photo-enhanced wet oxidation 有权
    通过选择性光增强湿氧化从生长衬底分离氮化膜的方法

    公开(公告)号:US08481353B2

    公开(公告)日:2013-07-09

    申请号:US13086787

    申请日:2011-04-14

    IPC分类号: H01L21/00

    摘要: Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.

    摘要翻译: 本公开的各种实施例涉及通过选择性光增强湿氧化从生长衬底分离氮化物膜。 在一个方面,一种方法可以通过选择性光增强湿氧化将与第一衬底结构结合的III族氮化物结构的一部分转变为III氧化物层。 该方法还可以将第一衬底结构与III族氮化物结构分开。

    Method of Separating Nitride Films from the Growth Substrates by Selective Photo-Enhanced Wet Oxidation
    10.
    发明申请
    Method of Separating Nitride Films from the Growth Substrates by Selective Photo-Enhanced Wet Oxidation 有权
    通过选择性光增强湿氧化从生长底物分离氮化物膜的方法

    公开(公告)号:US20120264247A1

    公开(公告)日:2012-10-18

    申请号:US13086787

    申请日:2011-04-14

    IPC分类号: H01L33/32 H01L21/268

    摘要: Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.

    摘要翻译: 本公开的各种实施方案涉及通过选择性光增强湿氧化从生长衬底分离氮化物膜。 在一个方面,一种方法可以通过选择性光增强湿氧化将与第一衬底结构结合的III族氮化物结构的一部分转变为III氧化物层。 该方法还可以将第一衬底结构与III族氮化物结构分开。