公开(公告)号：US20120060226A1

公开(公告)日：2012-03-08

申请号：US13006026

申请日：2011-01-13

申请人： Jin-Ho PARK ,  Jin-Ho PARK ,  Jae-Young LIM ,  Sang-Heon KWAK ,  Sung-Chul KIM ,  Kyung-Sik CHOI ,  Hyeong-Jae CHOI

发明人： Jin-Ho PARK ,  Jin-Ho PARK ,  Jae-Young LIM ,  Sang-Heon KWAK ,  Sung-Chul KIM ,  Kyung-Sik CHOI ,  Hyeong-Jae CHOI

IPC分类号： G06F21/24

CPC分类号： G06F21/6209 ,  G06F2221/2111 ,  G06F2221/2117 ,  G06F2221/2141 ,  H04W4/02 ,  H04W4/043 ,  H04W12/08

摘要： A method for authorizing use of Augmented Reality (AR) information includes acquiring information regarding a location at which the AR information is to be provided, authorizing a user to use the AR information, creating attribute information including the AR information, the location information, and authority information, and transmitting the attribute information to an AR system. The AR system can register the attribute information, and can provide the AR information only to authorized users. An apparatus to authorize use of Augmented Reality (AR) information includes a location information acquiring unit, an authorization unit to authorize a user to use the AR information, and an AR information processor to create attribute information. The attribute information is transmitted to an AR system as a request for the AR system to register the attribute information so the AR system provides the AR information only to authorized users.

摘要翻译： 授权使用增强现实（AR）信息的方法包括获取关于要提供AR信息的位置的信息，授权用户使用AR信息，创建包括AR信息的属性信息，位置信息和 权限信息，并将属性信息发送到AR系统。 AR系统可以注册属性信息，只能向授权用户提供AR信息。 授权使用增强现实（AR）信息的装置包括位置信息获取单元，授权用户使用AR信息的授权单元和AR信息处理器来创建属性信息。 属性信息作为AR系统的请求发送给AR系统，注册属性信息，因此AR系统只向授权用户提供AR信息。

公开(公告)号：US08969196B2

公开(公告)日：2015-03-03

申请号：US13616910

申请日：2012-09-14

申请人： Jin-Ho Park ,  Gil-Heyun Choi ,  Byung-Lyul Park ,  Jong-Myeong Lee ,  Zung-Sun Choi ,  Hye-Kyung Jung

发明人： Jin-Ho Park ,  Gil-Heyun Choi ,  Byung-Lyul Park ,  Jong-Myeong Lee ,  Zung-Sun Choi ,  Hye-Kyung Jung

IPC分类号： H01L21/768 ,  H01L21/4763 ,  H01L21/285 ,  H01L23/532 ,  H01L27/115 ,  H01L27/108

CPC分类号： H01L21/76846 ,  H01L21/28562 ,  H01L21/76856 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L27/10855 ,  H01L27/11521 ,  H01L27/11524 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device can include an insulation layer on that is on a substrate on which a plurality of lower conductive structures are formed, where the insulation layer has an opening. A barrier layer is on a sidewall and a bottom of the opening of the insulation layer, where the barrier layer includes a first barrier layer in which a constituent of a first deoxidizing material is richer than a metal material in the first barrier layer and a second barrier layer in which a metal material in the second barrier layer is richer than a constituent of a second deoxidizing material. An interconnection is in the opening of which the sidewall and the bottom are covered with the barrier layer, the interconnection is electrically connected to the lower conductive structure.

摘要翻译： 半导体器件可以包括在其上形成有多个下导电结构的基板上的绝缘层，其中绝缘层具有开口。 阻挡层位于绝缘层的开口的侧壁和底部上，其中阻挡层包括第一阻挡层，第一脱氧材料的成分比第一阻挡层中的金属材料更富，第二阻隔层 阻挡层，其中第二阻挡层中的金属材料比第二脱氧材料的成分更富。 互连在其开口中，侧壁和底部被阻挡层覆盖，互连电连接到下导电结构。

公开(公告)号：US08606146B2

公开(公告)日：2013-12-10

申请号：US12923620

申请日：2010-09-29

申请人： Byung-jo Lee ,  Jin-ho Park ,  Kwoang-joe Seorl ,  Gun-wook Kim

发明人： Byung-jo Lee ,  Jin-ho Park ,  Kwoang-joe Seorl ,  Gun-wook Kim

IPC分类号： G03G15/04

CPC分类号： G03G21/1619 ,  G03G15/0121 ,  G03G15/0863 ,  G03G15/0896 ,  G03G21/16 ,  G03G21/1623 ,  G03G21/1676 ,  G03G21/1875 ,  G03G2221/163

摘要： A structure for installing consumables of an image forming apparatus, the structure comprising: a frame; a plurality of consumables which comprises irregular installation preventing units in different locations; a plurality of irregular installation preventing keys which prevents an irregular installation of the plurality of consumables by an interaction with the irregular installation preventing units; and an installation guide member which is installed in the frame, comprising a key installation unit to guide the plurality of irregular installation preventing keys to be installed differently for each of the consumables and having the plurality of consumables installed therein.

摘要翻译： 一种用于安装图像形成装置的消耗品的结构，所述结构包括：框架; 多个消耗品，其包括不同位置的不规则安装防止单元; 多个不规则安装防止键，通过与不规则安装防止单元的相互作用防止多个消耗品的不规则安装; 以及安装在所述框架中的安装引导构件，所述安装引导构件包括键安装单元，用于引导所述多个不规则安装防止键以针对每个所述消耗品不同地安装并且安装有所述多个消耗品。

公开(公告)号：US08548555B2

公开(公告)日：2013-10-01

申请号：US13619524

申请日：2012-09-14

申请人： Kyung-Soo Jin ,  Jong-Jin Lim ,  Jong-Gil Byeon ,  Eun-Tae Kim ,  Jin-Ho Park

发明人： Kyung-Soo Jin ,  Jong-Jin Lim ,  Jong-Gil Byeon ,  Eun-Tae Kim ,  Jin-Ho Park

IPC分类号： A61B5/04

CPC分类号： A61B5/0478 ,  A61B2562/0215

摘要： An active dry sensor module for measurement of bioelectricity is disclosed. The active dry sensor module of the present invention excludes the use of a conductive gel, thereby not supplying unpleasantness and discomfort to a reagent and preventing the interference of the signal due to a noise component. Further, the active dry sensor module of the present invention amplifies the biomedical signal to a desired level, thereby precisely and easily measuring the biomedical signal.

公开(公告)号：US20130170853A1

公开(公告)日：2013-07-04

申请号：US13552254

申请日：2012-07-18

申请人： Byung-jo LEE ,  Gun-wook KIM ,  Jin-ho PARK ,  Young-min YOON

发明人： Byung-jo LEE ,  Gun-wook KIM ,  Jin-ho PARK ,  Young-min YOON

IPC分类号： G03G21/00 ,  G03G15/00

CPC分类号： G03G21/10 ,  G03G15/0435 ,  G03G21/12 ,  G03G21/1633 ,  G03G21/1647 ,  G03G21/1666 ,  G03G2221/169

摘要： An image forming apparatus includes a main body of the image forming apparatus; at least one image forming unit disposed in the main body; a light scanning unit that is disposed in the main body and scans light to form an electrostatic latent image on a photosensitive medium of the at least one image forming unit; a window open-closing shutter that is disposed to slidably move on a surface of the light scanning unit from which light emits, and moves between an open position where a light moving path is opened and a blocking position where the light moving path is blocked; a shutter operating lever that is disposed in the main body, and activates the window open-closing shutter to be positioned at either of the open position and the blocking position; and a pressure member that is disposed in the main body and presses the shutter operating lever.

摘要翻译： 图像形成装置包括图像形成装置的主体; 设置在主体中的至少一个图像形成单元; 光扫描单元，其设置在所述主体中并扫描光以在所述至少一个图像形成单元的感光介质上形成静电潜像; 窗口开闭快门，其设置成在光发射的光扫描单元的表面上可滑动地移动，并且在打开光移动路径的打开位置和光移动路径被阻挡的阻挡位置之间移动; 一个快门操作杆，其设置在主体中，并且启动窗户打开 - 关闭开关以定位在打开位置和阻挡位置中的任一个处; 以及压力构件，其设置在主体中并按压快门操作杆。

公开(公告)号：US08288275B2

公开(公告)日：2012-10-16

申请号：US12271220

申请日：2008-11-14

申请人： Jin-ho Park ,  Gil-heyun Choi ,  Sang-woo Lee ,  Jun-ho Park ,  Ho-ki Lee

发明人： Jin-ho Park ,  Gil-heyun Choi ,  Sang-woo Lee ,  Jun-ho Park ,  Ho-ki Lee

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/7684 ,  H01L21/76862

摘要： Provided are methods of forming a contact plug of a semiconductor device. Methods of forming a contact plug of a semiconductor device may include forming an interlayer insulating layer on a semiconductor substrate on which a lower structure is formed, forming a contact hole in the interlayer insulating layer, the contact hole exposing the lower structure, and forming a W layer and then a WN layer to form a W/WN barrier layer in the contact hole. Methods may include H2 remote plasma treating the W/WN barrier layer, forming a W-plug on the H2 remote plasma treated W/WN barrier layer to fill the contact hole, and chemical mechanical polishing (CMP) the W-plug and then the W/WN barrier layer in order to expose the interlayer insulating layer.

摘要翻译： 提供了形成半导体器件的接触插塞的方法。 形成半导体器件的接触插塞的方法可以包括在其上形成下部结构的半导体衬底上形成层间绝缘层，在层间绝缘层中形成接触孔，暴露下部结构的接触孔，并形成 W层，然后形成WN层，以在接触孔中形成W / WN阻挡层。 方法可以包括H2远程等离子体处理W / WN阻挡层，在H2远程等离子体处理的W / WN阻挡层上形成W-塞以填充接触孔，以及化学机械抛光（CMP）W-塞，然后 W / WN阻挡层，以露出层间绝缘层。

公开(公告)号：US20110314916A1

公开(公告)日：2011-12-29

申请号：US12825961

申请日：2010-06-29

申请人： Jin-Ho Park ,  Doo-Byung Yoon ,  Young-Chul Choi ,  Sung Hwan Shin

发明人： Jin-Ho Park ,  Doo-Byung Yoon ,  Young-Chul Choi ,  Sung Hwan Shin

IPC分类号： G01N29/12

CPC分类号： G01N29/348 ,  G01N29/42 ,  G01N2291/106

摘要： Provided is a method and device for low frequency vibration excitation, which may generate a low frequency using a plurality of ultrasonic generators for high frequency. The method generates ultrasonic waves using a plurality of ultrasonic generators attached to a target structure to induce a beat phenomenon, and extract a frequency lower than a frequency of each of the plurality of the ultrasonic generators to measure a property of the target structure, and thereby may be freely applied to a target structure, regardless of a shape of the target structure such as a plate, a curved pipe, and the like, using a relatively small-sized ultrasonic sensor for high frequency, and may excite a specific frequency of an acceleration range, so that the ultrasonic excitation method may be applicable in a relatively poor Signal-to-Noise Ratio (SNR) range.

摘要翻译： 提供了一种用于低频振动激励的方法和装置，其可以使用多个用于高频的超声波发生器来产生低频。 该方法使用附着到目标结构的多个超声波发生器产生超声波，以引起拍子现象，并且提取比多个超声波发生器的频率低的频率来测量目标结构的特性，从而 可以使用相对较小尺寸的用于高频率的超声波传感器，而不管诸如板，弯曲管等的目标结构的形状如何，可以自由地施加到目标结构，并且可以激发特定的频率 加速度范围，使得超声波激发方法可适用于相对较差的信噪比（SNR）范围。

公开(公告)号：US07998810B2

公开(公告)日：2011-08-16

申请号：US12424922

申请日：2009-04-16

申请人： Byung-hee Kim ,  Gil-heyun Choi ,  Sang-woo Lee ,  Chang-won Lee ,  Jin-ho Park ,  Eun-ji Jung ,  Jeong-gil Lee

发明人： Byung-hee Kim ,  Gil-heyun Choi ,  Sang-woo Lee ,  Chang-won Lee ,  Jin-ho Park ,  Eun-ji Jung ,  Jeong-gil Lee

IPC分类号： H01L21/336

CPC分类号： H01L27/11521 ,  H01L21/28273 ,  H01L29/66545

摘要： A method of forming a gate electrode of a semiconductor device is provided, the method including: forming a plurality of stacked structures each comprising a tunnel dielectric layer, a first silicon layer for floating gates, an intergate dielectric layer, a second silicon layer for control gates, and a mask pattern, on a semiconductor substrate in the stated order; forming a first interlayer dielectric layer between the plurality of stacked structures so that a top surface of the mask pattern is exposed; selectively removing the mask pattern of which the top surface is exposed; forming a third silicon layer in an area from which the hard disk layer was removed, and forming a silicon layer comprising the third silicon layer and the second silicon layer; recessing the first interlayer dielectric layer so that an upper portion of the silicon layer protrudes over the he first interlayer dielectric layer; and forming a metal silicide layer on the upper portion of the silicon layer.

摘要翻译： 提供一种形成半导体器件的栅电极的方法，所述方法包括：形成多个堆叠结构，每个堆叠结构包括隧道介电层，用于浮置栅极的第一硅层，栅极间介电层，用于控制的第二硅层 栅极和掩模图案，以所述顺序在半导体衬底上; 在所述多个堆叠结构之间形成第一层间电介质层，使得所述掩模图案的顶表面露出; 选择性地去除其顶表面暴露的掩模图案; 在去除所述硬盘层的区域中形成第三硅层，以及形成包含所述第三硅层和所述第二硅层的硅层; 使第一层间电介质层凹陷，使得硅层的上部突出在第一层间介电层上; 以及在所述硅层的上部形成金属硅化物层。

公开(公告)号：US07972891B2

公开(公告)日：2011-07-05

申请号：US12252461

申请日：2008-10-16

申请人： Jin-Ho Park

发明人： Jin-Ho Park

IPC分类号： H01L31/0232

CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14627 ,  H01L31/02162 ,  H01L31/02327

摘要： An image sensor and a method for manufacturing the same that includes photodiodes formed in a semiconductor substrate, a first insulating layer formed over the semiconductor substrate, the first insulating layer including a seed pattern corresponding spatially to the positions of the photodiodes, lower microlenses composed of an organic material formed over the seed pattern, a second insulating layer formed over the lower microlenses, a third insulating layer formed over the second insulating layer, color filters formed over the third insulating layer, and upper micro lenses formed over the color filters.

摘要翻译： 一种图像传感器及其制造方法，包括形成在半导体衬底中的光电二极管，形成在半导体衬底上的第一绝缘层，第一绝缘层包括在空间上与光电二极管的位置对应的种子图案，下部微透镜由 在种子图案上形成的有机材料，形成在下部微透镜上的第二绝缘层，形成在第二绝缘层上的第三绝缘层，形成在第三绝缘层上的滤色器，以及形成在滤色器上的上部微透镜。

公开(公告)号：US07968410B2

公开(公告)日：2011-06-28

申请号：US12460945

申请日：2009-07-27

申请人： Eun-ji Jung ,  Sang-woo Lee ,  Jeong-gil Lee ,  Gil-heyun Choi ,  Chang-won Lee ,  Byung-hee Kim ,  Jin-ho Park

发明人： Eun-ji Jung ,  Sang-woo Lee ,  Jeong-gil Lee ,  Gil-heyun Choi ,  Chang-won Lee ,  Byung-hee Kim ,  Jin-ho Park

IPC分类号： H01L21/336

CPC分类号： H01L27/11573 ,  H01L21/28123 ,  H01L21/28282

摘要： A method of fabricating a semiconductor device includes: forming a first polysilicon layer having a first thickness in a peripheral circuit region formed on a substrate; forming a stack structure comprising a first tunneling insulating layer, a charge trap layer, and a blocking insulating layer in a memory cell region formed on the substrate; forming a second polysilicon layer having a second thickness that is less than the first thickness on the blocking insulating layer; and forming gate electrodes by siliciding the first and second polysilicon layers.

摘要翻译： 一种制造半导体器件的方法包括：在形成在衬底上的外围电路区域中形成具有第一厚度的第一多晶硅层; 在形成在所述基板上的存储单元区域中形成包括第一隧道绝缘层，电荷陷阱层和阻挡绝缘层的堆叠结构; 在所述阻挡绝缘层上形成具有小于所述第一厚度的第二厚度的第二多晶硅层; 以及通过硅化第一和第二多晶硅层来形成栅电极。