公开(公告)号：US5978176A

公开(公告)日：1999-11-02

申请号：US954121

申请日：1997-10-20

申请人： Joichiro Ezaki ,  Noboru Yamanaka ,  Izumi Nomura

发明人： Joichiro Ezaki ,  Noboru Yamanaka ,  Izumi Nomura

IPC分类号： G11B5/39 ,  G11B5/10 ,  G11B5/31 ,  G11B5/40 ,  G11B21/21 ,  G11B33/14

CPC分类号： G11B5/3106 ,  G11B5/10 ,  G11B5/40 ,  G11B33/14 ,  G11B5/3109 ,  G11B5/3903

摘要： The present invention is directed to provide a magnetic head that is capable of effectively preventing TA noise.A slider 1 is provided with air bearing surfaces 111 and 121. Electromagnetic conversion elements 2 and 3, which are provided toward the trailing edge TR of the slider 1, perform electromagnetic conversion at the air bearing surfaces 111 and 121. The slider 1 is provided with indented portions 114 and projecting portions 115 at the air bearing surfaces 111 and 121 where the electromagnetic conversion elements 2 and 3 are provided. The indented portions 114 are provided in the areas corresponding to the width W2 of the electromagnetic conversion elements 2 and 3 viewed in the direction of the track width further toward the trailing edge TR than the electromagnetic conversion elements 2 and 3. The projecting portions 115 are provided adjacent to the indented portions 114 further projecting out compared to the indented portions 114.

摘要翻译： 本发明旨在提供一种能够有效地防止TA噪声的磁头。 滑块1设置有空气轴承表面111和121.朝向滑块1的后缘TR设置的电磁转换元件2和3在空气轴承表面111和121处进行电磁转换。提供滑块1 在设有电磁转换元件2和3的空气轴承表面111和121处具有凹入部分114和突出部分115。 凹槽部分114设置在与电磁转换元件2和3的宽度W2相对应的区域中，沿磁道宽度方向，比电磁转换元件2和3更靠近后缘TR。凸出部分115是 与凹部114相比，与凹部114相邻地设置进一步突出。

公开(公告)号：US07808813B2

公开(公告)日：2010-10-05

申请号：US11721141

申请日：2005-12-07

申请人： Joichiro Ezaki ,  Yuji Kakinuma

发明人： Joichiro Ezaki ,  Yuji Kakinuma

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C7/062 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C2207/063

摘要： There is provided a magnetic memory device capable of reading information even with a lower power supply voltage.The magnetic memory device is equipped with a plurality of storage cells laid out in two dimensions in (i+1) rows and (j+1) columns (where i, j are integers of one or higher). Two magnetoresistive effect revealing bodies 2a, 2b are disposed in each of the storage cells 1, and each storage cell includes: a first stage circuit 41 that supplies currents Ib1, Ib2 for detecting resistances of magnetoresistive effect revealing bodies 2a, 2b; an X-direction address decoder circuit 32 that supplies currents Iw1, Iw2 to the magnetoresistive effect revealing bodies 2a, 2b; and a current control circuit (constant current circuit 25n) that carries out control so that the total of the current Ib1 and the current Iw1 and the total of the current Iw2 and the current Ib2 are respectively constant.

摘要翻译： 提供了即使在较低的电源电压下也可以读取信息的磁存储器件。 磁存储器装置配备有（i + 1）行和（j + 1）列（其中i，j为1或更大的整数）的二维布置的多个存储单元。 两个磁阻效应显示体2a，2b设置在每个存储单元1中，并且每个存储单元包括：第一级电路41，其提供用于检测磁阻效应显示体2a，2b的电阻的电流Ib1，Ib2; 将电流Iw1，Iw2提供给磁阻效应显示体2a，2b的X方向地址解码器电路32; 以及电流控制电路（恒流电路25n），其进行控制，使得电流Ib1和电流Iw1的总和以及电流Iw2和电流Ib2的总和分别恒定。

公开(公告)号：US20060279980A1

公开(公告)日：2006-12-14

申请号：US10568808

申请日：2004-08-18

申请人： Susumu Haratani ,  Keiji Koga ,  Joichiro Ezaki

发明人： Susumu Haratani ,  Keiji Koga ,  Joichiro Ezaki

IPC分类号： G11C11/00

CPC分类号： H01L27/224 ,  G11C11/16 ,  H01L43/08

摘要： To provide a magnetic memory cell that is capable of efficiently changing the magnetization directions of magneto-sensitive layers. A magnetic memory cell comprises an annular magnetic layer 4a through which extends a write bit line 5a that generates a magnetic field, and a TMR film S20a configured so as to include: a first magneto-sensitive layer 14a, a magnetization direction of which is changed by the magnetic field in the annular magnetic layer 4a; and a magnetoresistive effect revealing body 20a disposed on a surface of the first magneto-sensitive layer 14a so that an electric current flows in a direction perpendicular to a laminating surface of the laminate, and the first magneto-sensitive layer 14a has a thickness thereof set in a range of not less than 0.5 nm to not more than 40 nm.

摘要翻译： 提供能够有效地改变感磁层的磁化方向的磁存储单元。 磁存储单元包括环形磁性层4a，通过该环形磁性层延伸产生磁场的写入位线5a;以及TMR膜S 20a，被配置为包括：第一磁敏层14a，磁化 其方向由环形磁性层4a中的磁场改变; 以及设置在第一感应层14a的表面上的电磁效应显示体20a，使得电流在垂直于层叠体的层叠表面的方向上流动，并且第一磁敏层14具有 其厚度设定在不小于0.5nm至不大于40nm的范围内。

公开(公告)号：US5268799A

公开(公告)日：1993-12-07

申请号：US17997

申请日：1993-02-16

申请人： Joichiro Ezaki ,  Kazumasa Fukuda ,  Masanori Sakai

发明人： Joichiro Ezaki ,  Kazumasa Fukuda ,  Masanori Sakai

IPC分类号： G11B5/012 ,  G11B5/54 ,  G11B5/58 ,  G11B5/60 ,  G11B5/82

CPC分类号： G11B5/6005 ,  G11B5/012 ,  G11B5/54 ,  G11B5/58

摘要： In a magnetic recording and reproducing apparatus of a type wherein a magnetic disk having a magnetic recording layer formed on a rigid substrate is rotated at a high speed and magnetic recording and reproduction are conducted by the magnetic head disposed on the surface of the disk, the magnetic recording and reproducing apparatus being characterized in that the magnetic recording and reproducing are conducted by the magnetic head which is caused to fly from the magnetic disk at at least an area of the outermost cylinder of the magnetic disk and is caused to be substantially in contact with the surface of magnetic disk at at least an innermost cylinder of the magnetic disk.

摘要翻译： 在其中具有形成在刚性基板上的磁记录层的磁盘以高速旋转并且通过设置在盘表面上的磁头进行磁记录和再现的类型的磁记录和再现装置中， 磁记录和再现装置的特征在于磁记录和再现是由在磁盘的最外圆柱体的至少一个区域处从磁盘飞出并被使其基本接触的磁头来进行的 其中磁盘的表面在磁盘的至少最内圆柱上。

公开(公告)号：US4901175A

公开(公告)日：1990-02-13

申请号：US206121

申请日：1988-06-13

申请人： Yoshiaki Ito ,  Joichiro Ezaki ,  Katsuhiko Tomita

发明人： Yoshiaki Ito ,  Joichiro Ezaki ,  Katsuhiko Tomita

IPC分类号： G11B5/48 ,  G11B5/60

CPC分类号： G11B5/6005 ,  G11B5/4826

摘要： In a magnetic disk supporting device of a type that the longitudinal direction of the supporting device extends in the tangential direction of the tracks of a magnetic disk, the direction of float rails on the slider of the magnetic head is the same as the longitudinal direction of the supporting device, and the slider is fixed to the lower surface of a central tongue portion constituting a part of the supporting device at a position that the front end of the slider does not overlap with a lateral frame as a part of the supporting device, whereby stable operation of the magnetic head can be obtained.

摘要翻译： 在支撑装置的纵向方向沿着磁盘的轨道的切线方向延伸的类型的磁盘支撑装置中，磁头的滑块上的浮动轨道的方向与 支撑装置和滑块在构成支撑装置的一部分的中央舌部的下表面处固定在滑块的前端不与作为支撑装置的一部分的侧框重叠的位置处， 从而可以获得磁头的稳定操作。

公开(公告)号：US4803577A

公开(公告)日：1989-02-07

申请号：US872240

申请日：1986-06-09

申请人： Joichiro Ezaki ,  Kazumasa Fukuda

发明人： Joichiro Ezaki ,  Kazumasa Fukuda

IPC分类号： G11B5/00 ,  G11B5/73 ,  G11B5/82 ,  G11B5/60 ,  G11B15/64 ,  G11B17/32 ,  G11B21/20

CPC分类号： G11B5/82 ,  G11B5/00 ,  G11B5/7315 ,  Y10S428/90

摘要： A vertical recording system using a rigid disk medium with high recording density has a substrate made of alumina silicate resin glass and a vertical magnetic anisotropic film located on said substrate. The anisotropic film has an easy axis of magnetization in the thickness direction of the film, and the hard axis of magnetization in the film plane. The maximum surface roughness R.sub.max of said disk is less than 50 .ANG., and a magnetic recording head which moves relative to the medium operates with said head contacted with the medium. A recording density higher than 200 KFRPI (kilo flux reversal per inch) is obtained by the present invention.

摘要翻译： 使用具有高记录密度的刚性盘介质的垂直记录系统具有由硅酸铝树脂玻璃制成的基板和位于所述基板上的垂直磁性各向异性膜。 各向异性膜在膜的厚度方向上具有容易的磁化轴和膜平面中的硬磁化轴。 所述盘的最大表面粗糙度Rmax小于50，并且相对于介质移动的磁记录头在与所述介质接触的头部进行操作。 通过本发明获得高于200KFRPI（千通量反转/英寸）的记录密度。

公开(公告)号：US20090290405A1

公开(公告)日：2009-11-26

申请号：US11721141

申请日：2005-12-07

申请人： Joichiro Ezaki ,  Yuji Kakinuma

发明人： Joichiro Ezaki ,  Yuji Kakinuma

IPC分类号： G11C11/00 ,  G11C7/02

CPC分类号： G11C11/16 ,  G11C7/062 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C2207/063

摘要： There is provided a magnetic memory device capable of reading information even with a lower power supply voltage.The magnetic memory device is equipped with a plurality of storage cells laid out in two dimensions in (i+1) rows and (j+1) columns (where i, j are integers of one or higher). Two magnetoresistive effect revealing bodies 2a, 2b are disposed in each of the storage cells 1, and each storage cell includes: a first stage circuit 41 that supplies currents Ib1, Ib2 for detecting resistances of magnetoresistive effect revealing bodies 2a, 2b; an X-direction address decoder circuit 32 that supplies currents Iw1, Iw2 to the magnetoresistive effect revealing bodies 2a, 2b; and a current control circuit (constant current circuit 25n) that carries out control so that the total of the current Ib1 and the current Iw1 and the total of the current Iw2 and the current Ib2 are respectively constant.

摘要翻译： 提供了即使在较低的电源电压下也可以读取信息的磁存储器件。 磁存储器装置配备有（i + 1）行和（j + 1）列（其中i，j为1或更大的整数）的二维布置的多个存储单元。 两个磁阻效应显示体2a，2b设置在每个存储单元1中，并且每个存储单元包括：第一级电路41，其提供用于检测磁阻效应显示体2a，2b的电阻的电流Ib1，Ib2; 将电流Iw1，Iw2提供给磁阻效应显示体2a，2b的X方向地址解码器电路32; 以及电流控制电路（恒流电路25n），其进行控制，使得电流Ib1和电流Iw1的总和以及电流Iw2和电流Ib2的总和分别恒定。

公开(公告)号：US07230843B2

公开(公告)日：2007-06-12

申请号：US10550201

申请日：2004-03-26

申请人： Joichiro Ezaki ,  Yuji Kakinuma ,  Keiji Koga ,  Shigekazu Sumita

发明人： Joichiro Ezaki ,  Yuji Kakinuma ,  Keiji Koga ,  Shigekazu Sumita

IPC分类号： G11C11/14

CPC分类号： H01L27/226 ,  B82Y10/00 ,  G11C11/16 ,  H01L27/224

摘要： The present invention provides a magnetic memory device based on a novel driving method realizing reliable writing and a method of writing the magnetic memory device. Four parallel portions are formed in a pair of loop-shaped write lines (6Xn) and (6Yn). Magnetoresistive devices (12A) and (12B) disposed in the parallel portion in an upper stage construct a memory cell (12Ev), and magnetoresistive devices (12A) and (12B) disposed in the parallel portion in a lower stage construct a memory cell (12Od). When current in the direction from the drive point A to the drive point B is passed from the current drives (123n) and (133n), the directions of the currents in the write lines (6Xn) and (6Yn) are aligned in the parallel portion of the memory cell (12Ev) but are opposite to each other in the parallel portion in the memory cell (12Od). In the memory cell (12Ev), induced magnetic fields enhance each other, and the magnetization directions of the magneto-sensitive layers of the magnetoresistive devices (12A) and (12B) are anti-parallel with each other. In the memory cell (12Od), the induced magnetic fields cancel each other out.

摘要翻译： 本发明提供了一种基于实现可靠写入的新型驱动方法和一种写入磁存储器件的方法的磁存储器件。 在一对环形写入线（6Xn）和（6Yn）中形成四个平行部分。 设置在上级的平行部分中的设置在存储单元（12Ev）中的磁阻器件（12A）和（12B），以及设置在下级的平行部分中的磁阻器件（12A）和（12A） 构建一个存储单元（12 Od）。 当从驱动点A到驱动点B的方向的电流从电流驱动器（123 n）和（133 n）通过时，写入线（6 Xn）和（6 Yn）中的电流方向为 在存储单元（12Ev）的平行部分中排列，但是在存储单元（12OD）的平行部分中彼此相对。 在存储单元（12Ev）中，感应磁场彼此增强，并且磁阻器件（12A）和（12B）的磁敏层的磁化方向彼此反平行。 在存储单元（12 Od）中，感应磁场相互抵消。

公开(公告)号：US06930911B2

公开(公告)日：2005-08-16

申请号：US10669561

申请日：2003-09-25

申请人： Joichiro Ezaki ,  Yuji Kakinuma ,  Keiji Koga

发明人： Joichiro Ezaki ,  Yuji Kakinuma ,  Keiji Koga

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C11/00

CPC分类号： G11C11/16

摘要： Each memory cell is constituted by a pair of magnetic memory elements. The magnetic memory elements are connected at one ends to sense bit lines, and at the other ends to a sense word line through a pair of reverse current preventing diodes, respectively. A constant current circuit is disposed on the grounded side of the sense word line. The constant current circuit has a function of fixing a current flowing through the sense word line, and is constituted by a constant voltage generating diode, a transistor and a current limiting resistor.

摘要翻译： 每个存储单元由一对磁存储元件构成。 磁存储元件在一端连接以感测位线，另一端分别连接到一对反向电流防止二极管的感测字线上。 恒流电路设置在感测字线的接地侧。 恒流电路具有固定流过感测字线的电流的功能，并且由恒压产生二极管，晶体管和限流电阻构成。

公开(公告)号：US6137652A

公开(公告)日：2000-10-24

申请号：US151602

申请日：1998-09-11

申请人： Joichiro Ezaki ,  Koichi Terunuma

发明人： Joichiro Ezaki ,  Koichi Terunuma

IPC分类号： G11B5/012 ,  G11B5/31 ,  G11B5/39 ,  G11B5/187

CPC分类号： G11B5/3967 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/012

摘要： The present invention relates to an improvement in the write pole structure at a thin film magnetic head. At a write element, a gap film is provided between a first pole portion and a second pole portion. The first pole portion includes a second magnetic film adjacent the gap film and a first magnetic film adjacent the second magnetic film. The second pole portion includes a third magnetic film and a fourth magnetic film. The third magnetic film is provided adjacent to the gap film. The fourth magnetic film is provided adjacent to the third magnetic film. The surface of the fourth magnetic film facing opposite the medium is set within a width W21 of the third magnetic film in the direction of the tracks at its surface facing opposite the medium. In other words, the width W21 of the third magnetic film at the surface facing opposite the medium and a width W22 of the fourth magnetic film at its surface facing opposite the medium satisfy a relationship expressed as W22.ltoreq.W21. Thus, unnecessary magnetic recording occurring due to leaked magnetic field is prevented.

摘要翻译： 本发明涉及一种在薄膜磁头上的写极结构的改进。 在写入元件处，间隔膜设置在第一极部分和第二极部分之间。 第一极部包括与间隙膜相邻的第二磁性膜和与第二磁性膜相邻的第一磁性膜。 第二极部包括第三磁性膜和第四磁性膜。 第三磁性膜邻近间隙膜设置。 第四磁性膜设置成与第三磁性膜相邻。 面向相对介质的第四磁性膜的表面被设置在第三磁性膜的宽度W 21之内，在与表面相对的介质的表面上，轨道的方向。 换句话说，与介质相对的表面处的第三磁性膜的宽度W21和第四磁性膜在与介质相对的表面的宽度W22满足表示为W22