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    GAN-BASED VERTICAL STRUCTURE LED APPLYING GRAPHENE FILM CURRENT EXPANSION LAYER
    1.
    发明申请
    GAN-BASED VERTICAL STRUCTURE LED APPLYING GRAPHENE FILM CURRENT EXPANSION LAYER 审中-公开
    基于GAN的垂直结构LED应用石墨膜电流扩展层

    公开(公告)号：US20140151632A1

    公开(公告)日：2014-06-05

    申请号：US14123439

    申请日：2012-03-13

    申请人： Jinmin Li ,  Liancheng Wang ,  Yiyun Zhang ,  Xiaoyan Yi ,  Guohong Wang ,  Junxi Wang

    发明人： Jinmin Li ,  Liancheng Wang ,  Yiyun Zhang ,  Xiaoyan Yi ,  Guohong Wang ,  Junxi Wang

    IPC分类号： H01L33/06 ,  H01L33/32

    CPC分类号： H01L33/02 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40

    摘要： The present invention discloses A graphene film electrical current spreading layer applied GaN-based LED in vertical. structure, comprising: a p-type metal electrode including a metal support substrate and a metal reflective mirror formed on the metal support substrate; a hole injecting layer formed on the metal reflective mirror of the p-type metal electrode; an electron blocking layer formed on the hole injecting layer; a lighting layer formed on the electron blocking layer; an electron limiting layer formed on the lighting layer; an electron injecting layer formed on the electron limiting layer; an electrical current spreading layer formed on the electron injecting layer; two n-type metal electrodes formed on the electrical spreading layer and covering a part of the electrical current spreading layer.

    摘要翻译： 本发明公开了一种石墨烯膜电流扩散层，其在垂直方向上施加GaN基LED。 结构，包括：p型金属电极，其包括形成在所述金属支撑基板上的金属支撑基板和金属反射镜; 形成在p型金属电极的金属反射镜上的空穴注入层; 形成在空穴注入层上的电子阻挡层; 形成在电子阻挡层上的照明层; 形成在照明层上的电子限制层; 形成在电子限制层上的电子注入层; 形成在电子注入层上的电流扩散层; 两个n型金属电极形成在电扩散层上并覆盖电流扩展层的一部分。

    White light emitting diode of a blue and yellow light emitting (structure) layer stacked structure and method of manufacturing the same
    2.
    发明申请
    White light emitting diode of a blue and yellow light emitting (structure) layer stacked structure and method of manufacturing the same 审中-公开

    公开(公告)号：US20060043385A1

    公开(公告)日：2006-03-02

    申请号：US11184168

    申请日：2005-07-19

    申请人： Xiaoliang Wang ,  Lunchun Guo ,  Junxi Wang ,  Jinmin Li ,  Yiping Zeng

    发明人： Xiaoliang Wang ,  Lunchun Guo ,  Junxi Wang ,  Jinmin Li ,  Yiping Zeng

    IPC分类号： H01L33/00

    CPC分类号： H01L33/08 ,  H01L33/32

    摘要： A white LED of a blue and yellow light emitting (structure) layer stacked structure includes a sapphire substrate, or gallium nitride substrate, or silicon carbide substrate, or silicon substrate; a buffer layer formed on the substrate; an N type gallium nitride epitaxial layer formed on the buffer layer; an N doped AlaInbGa1-a-bN quarternary alloy formed on the N type gallium nitride epitaxial layer; a blue light emitting structure layer which contains one or more InxGa1-xN/AlaInbGa1-a-bN quantum well(s) formed on the N type AlaInbGa1-a-bN layer; a yellow light emitting structure layer which contains one or more InyGa1-yN/AlaInbGa1-a-bN quantum well(s) formed on the InxGa1-xN/AlaInbGa1-a-bN quantum well structure; or alternatively, a yellow light emitting structure layer which contains one or more InyGa1-yN/AlaInbGa1-a-bN quantum well(s) being formed on the N type AlaInbGa1-a-bN layer first, and then a blue light emitting structure layer which contains one or more InxGa1-xN/AlaInbGa1-a-bN quantum well(s) being formed on the InyGa1-yN/AlaInbGa1-a-bN quantum well(s) structure; a P type Al0.1Ga0.9N and a P type GaN cap layer formed on the top.

    PACKAGING STRUCTURE OF LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    PACKAGING STRUCTURE OF LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 有权
    发光二极管的包装结构及其制造方法

    公开(公告)号：US20140264266A1

    公开(公告)日：2014-09-18

    申请号：US14232443

    申请日：2012-03-14

    申请人： Jinmin Li ,  Hua Yang ,  Xiaoyan Yi ,  Junxi Wang

    发明人： Jinmin Li ,  Hua Yang ,  Xiaoyan Yi ,  Junxi Wang

    IPC分类号： H01L33/06 ,  H01L33/58 ,  H01L33/56 ,  H01L33/00

    CPC分类号： H01L33/06 ,  H01L24/24 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/382 ,  H01L33/385 ,  H01L33/486 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

    摘要： The present disclosure relates to a light emitting diode packaging structure and the method of manufacturing the same. The light emitting diode packaging structure comprises: an insulating substrate with through holes formed on each side of the upper surface thereof, the through hole being filling with conductive metal; a n-type layer formed on the insulating substrate with a hole, which is filled with conductive metal; an active layer provided on the n-type layer; a p-type layer formed on the active layer; an insulating layer configured on one side of the n-type layer, the active layer and the p-type layer and to cover part of the upper surface of the p-type layer; a p-type electrode configured to cover the insulating layer and part of the upper surface of the p-type layer; a n-type electrode provided on a side of the upper surface of the n-type layer and configured to connect with the conductive metal in the through hole in the insulating substrate; a first back electrode provided at one side of back surface of the insulating substrate, the first back electrode connecting with the p-type electrode through the conductive metal in the through hole in the insulating substrate; a second back electrode provided at the other side of back surface of the insulating substrate, the second back electrode connecting with the n-type electrode through the conductive metal in the through hole in the insulating substrate; an optical element packaged on the base substrate, thereby finishing a device.

    摘要翻译： 本公开涉及一种发光二极管封装结构及其制造方法。 所述发光二极管封装结构包括：绝缘基板，其上表面的每一侧形成有通孔，所述通孔填充导电金属; 形成在具有孔的绝缘基板上的n型层，其填充有导电金属; 设置在n型层上的有源层; 形成在有源层上的p型层; 绝缘层，其构造在所述n型层的一侧，所述有源层和p型层的一侧，并且覆盖所述p型层的上表面的一部分; p型电极，被配置为覆盖所述绝缘层和所述p型层的上表面的一部分; n型电极，其设置在所述n型层的上表面的一侧，并且被配置为与所述绝缘基板中的所述通孔中的所述导电金属连接; 设置在所述绝缘基板的背面的一侧的第一背面电极，所述第一背面电极通过所述绝缘基板的通孔中的所述导电性金属与所述p型电极连接; 设置在所述绝缘基板的背面的另一侧的第二背面电极，所述第二背面电极通过所述绝缘基板的通孔中的所述导电金属与所述n型电极连接; 封装在基底基板上的光学元件，从而完成设备。