公开(公告)号：US09150441B2

公开(公告)日：2015-10-06

申请号：US13512435

申请日：2010-12-01

申请人： Jinmin Li ,  Liankui Zhou ,  Dayong Li

发明人： Jinmin Li ,  Liankui Zhou ,  Dayong Li

IPC分类号： C02F1/52 ,  B01D21/01 ,  B01D21/24 ,  B01D21/00 ,  B01D21/02

CPC分类号： C02F1/52 ,  B01D21/003 ,  B01D21/0045 ,  B01D21/01 ,  B01D21/10 ,  B01D21/2411 ,  C02F1/5281 ,  C02F2201/003

摘要： A sewage treatment apparatus comprises a first stage equipment for treating sewage feed to obtain a first effluent and a second stage equipment for treating the first effluent to obtain a second effluent. The second stage equipment comprises a mixer (VI) for mixing the first effluent and a flocculation agent to obtain the first effluent containing the flocculation agent and a flocculation-clarification equipment (VII) comprises a first flocculation reaction chamber (A), into which the first effluent containing the flocculation agent is entered and subjected to flocculation reaction to form a mixture of water and dreg; a first separation chamber (C), into which the mixture of water and dreg from the first flocculation reaction chamber (A) is entered and separated to obtain a first part of the second effluent and a first dreg; and a second separation chamber (D), into which part of the first dreg is entered and separated to obtain a second part of the second effluent and a second dreg.

摘要翻译： 污水处理设备包括用于处理污水进料以获得第一流出物的第一级设备和用于处理第一流出物以获得第二流出物的第二级设备。 第二级设备包括用于混合第一流出物和絮凝剂以获得含有絮凝剂的第一流出物的混合器（VI），絮凝澄清设备（VII）包括第一絮凝反应室（A），其中 进入含有絮凝剂的第一流出物并进行絮凝反应以形成水和渣的混合物; 第一分离室（C），其中来自第一絮凝反应室（A）的水和渣滓的混合物进入并分离，以获得第一部分第二流出物和第一渣滓; 和第二分离室（D），其中进入和分离第一渣的一部分以获得第二流出物的第二部分和第二渣。

公开(公告)号：US20120228204A1

公开(公告)日：2012-09-13

申请号：US13512435

申请日：2010-12-01

申请人： Jinmin Li ,  Liankui Zhou ,  Dayong Li

发明人： Jinmin Li ,  Liankui Zhou ,  Dayong Li

IPC分类号： C02F1/52 ,  C02F9/14

CPC分类号： C02F1/52 ,  B01D21/003 ,  B01D21/0045 ,  B01D21/01 ,  B01D21/10 ,  B01D21/2411 ,  C02F1/5281 ,  C02F2201/003

摘要： A sewage treatment apparatus comprises a first stage equipment for treating sewage feed to obtain a first effluent and a second stage equipment for treating the first effluent to obtain a second effluent. The second stage equipment comprises a mixer (VI) for mixing the first effluent and a flocculation agent to obtain the first effluent containing the flocculation agent and a flocculation-clarification equipment (VII) comprises a first flocculation reaction chamber (A), into which the first effluent containing the flocculation agent is entered and subjected to flocculation reaction to form a mixture of water and dreg; a first separation chamber (C), into which the mixture of water and dreg from the first flocculation reaction chamber (A) is entered and separated to obtain a first part of the second effluent and a first dreg; and a second separation chamber (D), into which part of the first dreg is entered and separated to obtain a second part of the second effluent and a second dreg.

摘要翻译： 污水处理设备包括用于处理污水进料以获得第一流出物的第一级设备和用于处理第一流出物以获得第二流出物的第二级设备。 第二级设备包括用于混合第一流出物和絮凝剂以获得含有絮凝剂的第一流出物的混合器（VI），絮凝澄清设备（VII）包括第一絮凝反应室（A），其中 进入含有絮凝剂的第一流出物并进行絮凝反应以形成水和渣的混合物; 第一分离室（C），其中来自第一絮凝反应室（A）的水和渣滓的混合物进入并分离，以获得第一部分第二流出物和第一渣滓; 和第二分离室（D），其中进入和分离第一渣的一部分以获得第二流出物的第二部分和第二渣。

公开(公告)号：US20060043385A1

公开(公告)日：2006-03-02

申请号：US11184168

申请日：2005-07-19

申请人： Xiaoliang Wang ,  Lunchun Guo ,  Junxi Wang ,  Jinmin Li ,  Yiping Zeng

发明人： Xiaoliang Wang ,  Lunchun Guo ,  Junxi Wang ,  Jinmin Li ,  Yiping Zeng

IPC分类号： H01L33/00

CPC分类号： H01L33/08 ,  H01L33/32

摘要： A white LED of a blue and yellow light emitting (structure) layer stacked structure includes a sapphire substrate, or gallium nitride substrate, or silicon carbide substrate, or silicon substrate; a buffer layer formed on the substrate; an N type gallium nitride epitaxial layer formed on the buffer layer; an N doped AlaInbGa1-a-bN quarternary alloy formed on the N type gallium nitride epitaxial layer; a blue light emitting structure layer which contains one or more InxGa1-xN/AlaInbGa1-a-bN quantum well(s) formed on the N type AlaInbGa1-a-bN layer; a yellow light emitting structure layer which contains one or more InyGa1-yN/AlaInbGa1-a-bN quantum well(s) formed on the InxGa1-xN/AlaInbGa1-a-bN quantum well structure; or alternatively, a yellow light emitting structure layer which contains one or more InyGa1-yN/AlaInbGa1-a-bN quantum well(s) being formed on the N type AlaInbGa1-a-bN layer first, and then a blue light emitting structure layer which contains one or more InxGa1-xN/AlaInbGa1-a-bN quantum well(s) being formed on the InyGa1-yN/AlaInbGa1-a-bN quantum well(s) structure; a P type Al0.1Ga0.9N and a P type GaN cap layer formed on the top.

公开(公告)号：US20120276924A1

公开(公告)日：2012-11-01

申请号：US13519896

申请日：2010-07-19

申请人： Jinmin Li ,  Ling Xu ,  Yu Shi ,  Hui Yue

发明人： Jinmin Li ,  Ling Xu ,  Yu Shi ,  Hui Yue

IPC分类号： H04W4/02

CPC分类号： H04W8/245 ,  G06F21/88 ,  H04L67/26 ,  H04W4/029 ,  H04W4/14 ,  H04W12/00503 ,  H04W12/1206

摘要： The disclosure discloses a method for positioning a mobile terminal, which comprises: a server sends a push notification to a mobile terminal; the mobile terminal performs self-positioning after receiving the push notification, to acquire geographical position information regarding the mobile terminal, and sends the geographical position information to the server; the server receives and displays the geographical position information sent by the mobile terminal. The disclosure also discloses a system for positioning a mobile terminal for implementing the method for positioning a mobile terminal and a mobile terminal. With such method and device, the server can be used to send a push notification to the mobile terminal after a user finds that the mobile terminal is lost. The mobile terminal positions geographical position information thereof and sends the geographical position information to the server to help the user retrieve the mobile terminal.

摘要翻译： 本公开公开了一种用于定位移动终端的方法，其包括：服务器向移动终端发送推送通知; 移动终端在接收到推送通知之后执行自定位，以获取关于移动终端的地理位置信息，并将地理位置信息发送到服务器; 服务器接收并显示移动终端发送的地理位置信息。 本公开还公开了一种用于定位用于实现用于定位移动终端和移动终端的方法的移动终端的系统。 利用这种方法和装置，在用户发现移动终端丢失之后，服务器可以用于向移动终端发送推送通知。 移动终端定位其地理位置信息，并将地理位置信息发送到服务器以帮助用户检索移动终端。

公开(公告)号：US09246052B2

公开(公告)日：2016-01-26

申请号：US14232443

申请日：2012-03-14

申请人： Jinmin Li ,  Hua Yang ,  Xiaoyan Yi ,  Junxi Wang

发明人： Jinmin Li ,  Hua Yang ,  Xiaoyan Yi ,  Junxi Wang

IPC分类号： H01L21/00 ,  H01L27/15 ,  H01L29/22 ,  H01L33/06 ,  H01L33/48 ,  H01L33/62 ,  H01L23/00 ,  H01L33/00 ,  H01L33/56 ,  H01L33/58 ,  H01L33/38

CPC分类号： H01L33/06 ,  H01L24/24 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/382 ,  H01L33/385 ,  H01L33/486 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： The present disclosure relates to a light emitting diode packaging structure and the method of manufacturing the same. The light emitting diode packaging structure has an insulating substrate with through holes formed on each side of the upper surface thereof, the through hole being filled with conductive metal. Additionally, a n-type layer, an active layer, a p-type layer, an insulating layer and a p-type electrode are formed on the insulating substrate. The structure further may include a n-type electrode provided on a side of the upper surface of the n-type layer; a first back electrode provided at one side of the back surface of the insulating substrate; a second back electrode provided at the other side of back surface of the insulating substrate; and an optical element packaged on the base substrate.

摘要翻译： 本公开涉及一种发光二极管封装结构及其制造方法。 发光二极管封装结构具有在其上表面的每一侧上形成有通孔的绝缘基板，该通孔填充有导电金属。 此外，在绝缘基板上形成n型层，有源层，p型层，绝缘层和p型电极。 该结构还可以包括设置在n型层的上表面侧的n型电极; 设置在所述绝缘基板的背面的一侧的第一背面电极; 设置在所述绝缘基板的背面的另一侧的第二背面电极; 以及封装在基底基板上的光学元件。

公开(公告)号：US20140264266A1

公开(公告)日：2014-09-18

申请号：US14232443

申请日：2012-03-14

申请人： Jinmin Li ,  Hua Yang ,  Xiaoyan Yi ,  Junxi Wang

发明人： Jinmin Li ,  Hua Yang ,  Xiaoyan Yi ,  Junxi Wang

IPC分类号： H01L33/06 ,  H01L33/58 ,  H01L33/56 ,  H01L33/00

CPC分类号： H01L33/06 ,  H01L24/24 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/382 ,  H01L33/385 ,  H01L33/486 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： The present disclosure relates to a light emitting diode packaging structure and the method of manufacturing the same. The light emitting diode packaging structure comprises: an insulating substrate with through holes formed on each side of the upper surface thereof, the through hole being filling with conductive metal; a n-type layer formed on the insulating substrate with a hole, which is filled with conductive metal; an active layer provided on the n-type layer; a p-type layer formed on the active layer; an insulating layer configured on one side of the n-type layer, the active layer and the p-type layer and to cover part of the upper surface of the p-type layer; a p-type electrode configured to cover the insulating layer and part of the upper surface of the p-type layer; a n-type electrode provided on a side of the upper surface of the n-type layer and configured to connect with the conductive metal in the through hole in the insulating substrate; a first back electrode provided at one side of back surface of the insulating substrate, the first back electrode connecting with the p-type electrode through the conductive metal in the through hole in the insulating substrate; a second back electrode provided at the other side of back surface of the insulating substrate, the second back electrode connecting with the n-type electrode through the conductive metal in the through hole in the insulating substrate; an optical element packaged on the base substrate, thereby finishing a device.

摘要翻译： 本公开涉及一种发光二极管封装结构及其制造方法。 所述发光二极管封装结构包括：绝缘基板，其上表面的每一侧形成有通孔，所述通孔填充导电金属; 形成在具有孔的绝缘基板上的n型层，其填充有导电金属; 设置在n型层上的有源层; 形成在有源层上的p型层; 绝缘层，其构造在所述n型层的一侧，所述有源层和p型层的一侧，并且覆盖所述p型层的上表面的一部分; p型电极，被配置为覆盖所述绝缘层和所述p型层的上表面的一部分; n型电极，其设置在所述n型层的上表面的一侧，并且被配置为与所述绝缘基板中的所述通孔中的所述导电金属连接; 设置在所述绝缘基板的背面的一侧的第一背面电极，所述第一背面电极通过所述绝缘基板的通孔中的所述导电性金属与所述p型电极连接; 设置在所述绝缘基板的背面的另一侧的第二背面电极，所述第二背面电极通过所述绝缘基板的通孔中的所述导电金属与所述n型电极连接; 封装在基底基板上的光学元件，从而完成设备。

公开(公告)号：US20090029495A1

公开(公告)日：2009-01-29

申请号：US12110428

申请日：2008-04-28

申请人： Jinmin LI ,  Xiaodong Wang ,  Guohong Wang ,  Liangchen Wang ,  Fuhua Yang

发明人： Jinmin LI ,  Xiaodong Wang ,  Guohong Wang ,  Liangchen Wang ,  Fuhua Yang

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/42 ,  H01L33/46

摘要： Fabrication method of GaN power LED with electrodes formed by composite optical coatings, comprising epitaxially growing N—GaN, active, and P—GaN layers successively on a substrate; depositing a mask layer thereon; coating the mask layer with photoresist; etching the mask layer into an N—GaN electrode pattern; etching through that electrode pattern to form an N—GaN electrode region; removing the mask layer and cleaning; forming a transparent, electrically conductive film simultaneously on the P—GaN and N—GaN layers; forming P—GaN and N—GaN transparent, electrically conductive electrodes by lift-off; forming bonding pad pattern for the P—GaN and N—GaN electrodes by photolithography process; simultaneously forming thereon bonding pad regions for the P—GaN and N—GaN electrodes by stepped electron beam evaporation; forming an antireflection film pattern by photolithography process; forming an antireflection film; thinning and polishing the backside of the substrate, then forming a reflector thereon; and completing the process after scribing, packaging and testing.

摘要翻译： 具有通过复合光学涂层形成的电极的GaN功率LED的制造方法，包括在衬底上连续地外延生长N-GaN，有源和P-GaN层; 在其上沉积掩模层; 用光刻胶涂覆掩模层; 将掩模层蚀刻成N-GaN电极图案; 蚀刻该电极图案以形成N-GaN电极区域; 去除掩模层并进行清洗; 在P-GaN和N-GaN层上同时形成透明导电膜; 通过剥离形成P-GaN和N-GaN透明导电电极; 通过光刻工艺形成用于P-GaN和N-GaN电极的焊盘图案; 同时通过阶梯式电子束蒸发在其上形成用于P-GaN和N-GaN电极的焊盘区域; 通过光刻工艺形成抗反射膜图案; 形成抗反射膜; 对衬底的背面进行稀疏和抛光，然后在其上形成反射器; 并在划线，包装和测试后完成该过程。

公开(公告)号：US07285431B2

公开(公告)日：2007-10-23

申请号：US11167242

申请日：2005-06-27

申请人： Jinmin Li ,  Guohong Wang ,  Liangchen Wang ,  Long Ma ,  Zhongchao Fan

发明人： Jinmin Li ,  Guohong Wang ,  Liangchen Wang ,  Long Ma ,  Zhongchao Fan

IPC分类号： H04N7/00

CPC分类号： H01L33/62 ,  H01L24/17 ,  H01L33/0079 ,  H01L33/64 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2933/0075 ,  Y10S977/759 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： This invention relates to a method for manufacturing a GaN based LED of a back hole structure, and the method comprises: epitaxially growing an N type GaN layer, a multi-quantum wells emitting active region and a P type GaN layer in turn on an insulation substrate made of sapphire or other materials; etching the N type GaN layer by photoetching, and forming a P type ohmic contact electrode and an N type ohmic contact electrode; scribing the chip to divide the dies on the epitaxial chip into individual die; forming a SiO2 insulation isolation layer on both sides of the silicon chip, forming a metal electrode on a face side, and forming a back hole pattern on a back side; forming a back hole; forming a bump pattern for plating on the face side of the silicon chip by thick resist photoetching; forming a layer of alloy with low melting point on the back side of the silicon chip, thus forming a base; on the back side of the base, directly attaching the base to a heat sink of a housing; bonding the die with the face side of the base through the metal bumps, leading an N electrode of the LED from the metal electrode formed on the face surface of the silicon chip, and leading a P electrode of the LED from the back side of the heat sink of the housing.

摘要翻译： 本发明涉及一种用于制造背孔结构的GaN基LED的方法，该方法包括：依次在绝缘层上外延生长N型GaN层，多量子阱发射有源区和P型GaN层 由蓝宝石或其他材料制成的基板; 通过光刻蚀刻蚀N型GaN层，形成P型欧姆接触电极和N型欧姆接触电极; 划片芯片将外延芯片上的管芯分成单个管芯; 在硅片的两面上形成SiO 2绝缘隔离层，在正面形成金属电极，在背面形成背孔图案; 形成后孔; 通过厚抗蚀剂光刻法形成用于电镀在硅芯片的表面上的凸块图案; 在硅芯片的背面形成低熔点的合金层，形成基体; 在基座的后侧，将基座直接连接到壳体的散热器; 通过金属凸块将模具与基体的表面侧接合，从形成在硅芯片的表面上的金属电极引导LED的N电极，并从LED的背面引导LED的P电极 外壳散热器

公开(公告)号：US20060068515A1

公开(公告)日：2006-03-30

申请号：US11167242

申请日：2005-06-27

申请人： Jinmin Li ,  Guohong Wang ,  Liangchen Wang ,  Long Ma ,  Zhongchao Fan

发明人： Jinmin Li ,  Guohong Wang ,  Liangchen Wang ,  Long Ma ,  Zhongchao Fan

IPC分类号： H01L21/00

CPC分类号： H01L33/62 ,  H01L24/17 ,  H01L33/0079 ,  H01L33/64 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2933/0075 ,  Y10S977/759 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： This invention relates to a method for manufacturing a GaN based LED of a back hole structure, and the method comprises: epitaxially growing an N type GaN layer, a multi-quantum wells emitting active region and a P type GaN layer in turn on an insulation substrate made of sapphire or other materials; etching the N type GaN layer by photoetching, and forming a P type ohmic contact electrode and an N type ohmic contact electrode; scribing the chip to divide the dies on the epitaxial chip into individual die; forming a SiO2 insulation isolation layer on both sides of the silicon chip, forming a metal electrode on a face side, and forming a back hole pattern on a back side; forming a back hole; forming a bump pattern for plating on the face side of the silicon chip by thick resist photoetching; forming a layer of alloy with low melting point on the back side of the silicon chip, thus forming a base; on the back side of the base, directly attaching the base to a heat sink of a housing; bonding the die with the face side of the base through the metal bumps, leading an N electrode of the LED from the metal electrode formed on the face surface of the silicon chip, and leading a P electrode of the LED from the back side of the heat sink of the housing.

摘要翻译： 本发明涉及一种用于制造背孔结构的GaN基LED的方法，该方法包括：依次在绝缘层上外延生长N型GaN层，多量子阱发射有源区和P型GaN层 由蓝宝石或其他材料制成的基板; 通过光刻蚀刻蚀N型GaN层，形成P型欧姆接触电极和N型欧姆接触电极; 划片芯片将外延芯片上的管芯分成单个管芯; 在硅片的两面上形成SiO 2绝缘隔离层，在正面形成金属电极，在背面形成背孔图案; 形成后孔; 通过厚抗蚀剂光刻法形成用于电镀在硅芯片的表面上的凸块图案; 在硅芯片的背面形成低熔点的合金层，形成基体; 在基座的后侧，将基座直接连接到壳体的散热器; 通过金属凸块将模具与基体的表面侧接合，从形成在硅芯片的表面上的金属电极引导LED的N电极，并从LED的背面引导LED的P电极 外壳散热器

公开(公告)号：US20150166381A1

公开(公告)日：2015-06-18

申请号：US14413179

申请日：2013-07-05

申请人： Jinmin LI ,  Liankui ZHOU ,  Dayong LI

发明人： Jinmin Li ,  Liankui Zhou ,  Dayong Li

IPC分类号： C02F3/12 ,  C02F3/30

CPC分类号： C02F3/1278 ,  C02F1/20 ,  C02F3/223 ,  C02F3/302 ,  C02F2203/00 ,  C02F2301/04 ,  Y02W10/15

摘要： The present invention relates to an apparatus for biological sewage treatment, including a concentrated mixed liquor driving device that uses a gas to drive a concentrated mixed liquor to flow. The present invention further relates to a method for biological sewage treatment, including a step of using a gas to drive a concentrated mixed liquor to flow. The gas can be an aeration gas, especially an oxygen-containing aeration gas after aeration treatment. The apparatus and method of the present invention can sufficiently utilize the energy and oxygen of the aeration gas, so that the energy consumption and maintenance cost of whole apparatus are reduced, biological sewage treatment effects are improved, and sludge floating is prevented. In addition, the apparatus of present invention has advantages of high performance, energy saving, high reliability, and good movability.

摘要翻译： 本发明涉及一种用于生物污水处理的装置，包括使用气体驱动浓缩混合液体流动的浓缩混合液驱动装置。 本发明还涉及一种用于生物污水处理的方法，包括使用气体驱动浓缩的混合液体流动的步骤。 气体可以是曝气气体，特别是曝气处理后的含氧曝气气体。 本发明的装置和方法可以充分利用曝气气体的能量和氧气，从而降低了整个装置的能量消耗和维护成本，提高了生物污水处理效果，防止污泥漂浮。 此外，本发明的装置具有性能高，节能高，可靠性高，移动性好的优点。