Device of monolithically integrated optoelectrics
    1.
    发明申请
    Device of monolithically integrated optoelectrics 审中-公开
    单片集成光电装置

    公开(公告)号:US20160197225A1

    公开(公告)日:2016-07-07

    申请号:US14998215

    申请日:2015-12-24

    申请人: Justin Payne

    发明人: Justin Payne

    IPC分类号: H01L31/18

    摘要: A method is disclosed for fabricating optoelectronic component structures and traditional circuit elements on a single silicon substrate. Specific examples of optoelectronic components include, but are not limited to: photodiode structures, light emitter structures and waveguide structures. Traditional circuit elements include transistors, diodes, resistors, capacitors and associated metalized interconnects. The method of fabrication is compatible with traditional CMOS, Bi-CMOS and Bipolar processing requirements and design rules. The method consists of a set of processing steps to allow hetero-epitaxial deposition of III-V compound semiconductor films on to a suitably prepared silicon surface, a set of processing steps to allow this deposited wafer to continue processing in a traditional CMOS, Bi-CMOS or Bipolar processing line without the risk of contamination, and a set of steps to allow the fabrication of p-n and p-i-n photodiode/detector structures in parallel with the traditional CMOS, Bi-CMOS or Bipolar processing flow that produces the traditional circuit elements and also a set of steps for producing dielectric waveguides and optically black isolation films. The disclosed method also allows for wafer level encapsulation and wafer level packaging of the as-fabricated integrated optoelectronic chip.

    摘要翻译: 公开了在单个硅衬底上制造光电子元件结构和传统电路元件的方法。 光电子部件的具体实例包括但不限于:光电二极管结构,光发射器结构和波导结构。 传统的电路元件包括晶体管,二极管,电阻器,电容器和相关联的金属化互连。 制造方法与传统的CMOS,Bi-CMOS和双极加工要求和设计规则兼容。 该方法包括一组处理步骤,以允许将III-V族化合物半导体膜异质外延沉积到适当制备的硅表面上,一组处理步骤允许该沉积的晶片在传统的CMOS,Bi- CMOS或双极处理线,没有污染的风险,以及一组步骤,允许制造pn和pin光电二极管/检测器结构与传统的CMOS,Bi-CMOS或双极处理流程并行生成传统的电路元件,并且还 用于制造介质波导和光学黑色隔离膜的一组步骤。 所公开的方法还允许制造的集成光电芯片的晶片级封装和晶片级封装。

    Management of mainframe resources in pre-boot environment
    2.
    发明授权
    Management of mainframe resources in pre-boot environment 有权
    预引导环境下大型机资源的管理

    公开(公告)号:US09176761B2

    公开(公告)日:2015-11-03

    申请号:US12475436

    申请日:2009-05-29

    CPC分类号: G06F9/45533 G06F9/4416

    摘要: Embodiments relate to systems and methods for the management of mainframe resources in a pre-boot environment. According to embodiments, a network management platform, for instance a platform equipped or compatible with pre-boot discovery and management tools such as the known pre-boot execution environment (PXE), can integrate a set of mainframe-based virtual machines using a pre-boot management engine. The pre-boot management engine can reside in or communicate with the mainframe operating system, and present a set of resources to the network management platform to allow the platform to include time-sliced or other virtual machines or resources, into the pre-boot protocol. According to embodiments, for instance, the set of virtual machines can be assigned temporary or pseudo media access control (MAC) or other hardware identifiers, so that the network management platform can view individual mainframe-based virtual machines as having a network connection and thereby receive similar boot commands to hardware-based client machines.

    摘要翻译: 实施例涉及用于在预引导环境中管理大型机资源的系统和方法。 根据实施例,网络管理平台(例如,配备或兼容预引导发现的平台的平台,以及诸如已知的预引导执行环境(PXE))之类的管理工具可以使用预先执行的一组基于主机的虚拟机来集成 启动管理引擎。 预引导管理引擎可以驻留在大型机操作系统中或与主机操作系统通信,并将一组资源呈现给网络管理平台,以允许平台将时间片或其他虚拟机或资源包含在预引导协议 。 根据实施例,例如,可以将该组虚拟机分配为临时或伪媒体访问控制(MAC)或其他硬件标识符,使得网络管理平台可以将各个基于主机的虚拟机视为具有网络连接,从而 接收类似的启动命令到基于硬件的客户机。

    SEMIPOLAR EMITTER
    3.
    发明申请
    SEMIPOLAR EMITTER 审中-公开
    二极管发射

    公开(公告)号:US20150069322A1

    公开(公告)日:2015-03-12

    申请号:US14252732

    申请日:2014-04-14

    申请人: Justin PAYNE

    发明人: Justin PAYNE

    CPC分类号: H01L33/16 H01L33/06 H01L33/32

    摘要: A light emitting diode is disclosed in the form of a III-V compound semiconductor hetero-epitaxially grown on the (111) crystallographic surface of a silicon substrate. The light emitter consists of a multiple quantum well hetero-structure that has been realized in one or more crystallographic planes that are members of a set of semi-polar crystallographic planes of the III-V material.

    摘要翻译: 公开了以硅衬底的(111)结晶表面异质生长的III-V族化合物半导体形式的发光二极管。 光发射器由多个量子阱异构结构组成,其已经在作为III-V材料的一组半极性结晶平面的成员的一个或多个结晶平面中实现。

    FORMING FABRIC WITH EXTENDED SURFACE
    7.
    发明申请
    FORMING FABRIC WITH EXTENDED SURFACE 审中-公开
    成型织物与扩展的表面

    公开(公告)号:US20090205797A1

    公开(公告)日:2009-08-20

    申请号:US12353367

    申请日:2009-01-14

    IPC分类号: D21F11/00 B32B5/02

    摘要: A fabric for an advanced dewatering system having a woven fabric, the woven fabric having a paper side and a roll side, the paper side having a paper side surface and the roll side having a roll side surface and a polymer material. The polymer material is deposited onto the fabric and extends above the paper side surface. The polymer material has at least one of a random pattern, a random motif, a pseudo-random pattern, a pseudo-random motif, a predetermined pattern, and a predetermined motif.

    摘要翻译: 一种用于具有机织织物的织物,所述机织织物具有纸侧和辊侧,所述纸侧具有纸侧表面,所述辊侧具有辊侧表面和聚合物材料。 聚合物材料沉积在织物上并在纸侧表面上方延伸。 聚合物材料具有随机图案,随机图案,伪随机图案,伪随机图案,预定图案和预定图案中的至少一个。

    METHOD OF MONOLITHICALLY INTEGRATED OPTOELECTRICS
    9.
    发明申请
    METHOD OF MONOLITHICALLY INTEGRATED OPTOELECTRICS 审中-公开
    单片集成光电的方法

    公开(公告)号:US20140091420A1

    公开(公告)日:2014-04-03

    申请号:US14043698

    申请日:2013-10-01

    申请人: Justin PAYNE

    发明人: Justin PAYNE

    IPC分类号: H01L27/144

    摘要: A monolithically integrated sensor is disclosed in the form of light detector(s), visible light emitter(s) and associated control circuit(s) monolithically integrated on a single silicon microchip. The detector structures consist of p-i-n photodiode structures, both diffused into and deposited on the surface of the silicon substrate. The emitter structures consist of III-V compound semiconductor hetero-epitaxial layers deposited on the surface of the silicon substrate. The control circuits are fabricated using traditional CMOS high volume manufacturing techniques. The sensor assembly is designed to be processed in a traditional CMOS wafer fab. The sensor assembly is further designed to be packaged at the wafer level.

    摘要翻译: 以单片集成在单个硅微芯片上的光检测器,可见光发射器和相关联的控制电路的形式公开了单片集成传感器。 检测器结构由p-i-n光电二极管结构组成,两者均扩散到并沉积在硅衬底的表面上。 发射极结构由沉积在硅衬底表面上的III-V族化合物半导体异质外延层构成。 控制电路使用传统的CMOS大容量制造技术制造。 传感器组件设计为在传统的CMOS晶圆厂中进行处理。 传感器组件进一步设计成在晶片级封装。

    Spatial Light Modulators and Fabrication Techniques
    10.
    发明申请
    Spatial Light Modulators and Fabrication Techniques 审中-公开
    空间光调制器和制作技术

    公开(公告)号:US20120170102A1

    公开(公告)日:2012-07-05

    申请号:US12983195

    申请日:2010-12-31

    IPC分类号: G02B26/06 H01L31/18

    摘要: We describe a phase modulating spatial light modulator (SLM). The SLM comprises a substrate bearing multiple SLM pixels, each of the SLM pixels comprising a MEMS (micro electromechanical system) optical phase modulating structure. The MEMS optical phase modulating structure comprises: a pixel electrode; a spring support structure around a perimeter of the pixel electrode; and a mirror spring supported by the spring support structure. The mirror spring comprises a mirror support and a plurality of mirror spring arms each extending between the mirror support and the spring support structure, and a mirror mounted on the mirror support. Each mirror spring arm has a spiral or serpentine shape. A voltage applied to the pixel electrode flexes the mirror spring and causes the mirror to translate perpendicularly to the substrate substantially without tilting.

    摘要翻译: 我们描述一个相位调制空间光调制器(SLM)。 SLM包括具有多个SLM像素的基板,每个SLM像素包括MEMS(微机电系统)光相位调制结构。 MEMS光相位调制结构包括:像素电极; 围绕像素电极的周边的弹簧支撑结构; 以及由弹簧支撑结构支撑的镜子弹簧。 镜子弹簧包括反射镜支撑件和多个镜子弹簧臂,每个镜子弹簧臂在反射镜支撑件和弹簧支撑结构之间延伸,以及安装在镜子支撑件上的镜子。 每个镜子弹簧臂都具有螺旋或蛇形形状。 施加到像素电极的电压使反射镜弹性弯曲,并且使得反射镜基本上不倾斜地垂直于基板平移。