公开(公告)号：US09235060B2

公开(公告)日：2016-01-12

申请号：US13038622

申请日：2011-03-02

申请人： Zhaomin Tong ,  Wenhong Gao ,  Xuyuan Chen ,  Muhammad Nadeem Akram ,  Ouyang Guangmin ,  Kaiying Wang

发明人： Zhaomin Tong ,  Wenhong Gao ,  Xuyuan Chen ,  Muhammad Nadeem Akram ,  Ouyang Guangmin ,  Kaiying Wang

IPC分类号： G02F1/01 ,  G03B27/72 ,  F21S8/00 ,  G02B27/48 ,  G03F7/20 ,  G02B5/02

CPC分类号： G02B27/48 ,  G02B5/02 ,  G02F1/01 ,  G03F7/2008 ,  G03F7/70058 ,  G03F7/70116 ,  G03F7/70191 ,  G03F7/702 ,  G03F7/70258 ,  G03F7/70583 ,  G03F7/70758

摘要： Speckle reduction apparatus includes a radiation path and a mask arranged within the radiation path. The mask includes an array of electrically controllable cells configured to form a pattern on the mask that varies with time. The speckle reduction mask includes a first linear array including first parallel lines arranged to change the phase of incident radiation, and a second linear array including second parallel lines arranged to change the phase of incident radiation and further arranged such that cells are formed at the intersections of the first parallel lines and the second parallel lines. The speckle reduction mask includes a N1×N2 array of cells, A, formed according to: ATA=βδk,l, where AT is the transpose of A, β is a real and positive constant, dk,l is Kronecker delta and N1≠N2.

摘要翻译： 斑点减少装置包括布置在辐射路径内的辐射路径和掩模。 该掩模包括电控制单元的阵列，其被配置为形成随着时间变化的掩模上的图案。 散斑减少掩模包括第一线性阵列，其包括布置成改变入射辐射的相位的第一平行线，以及包括布置成改变入射辐射的相位的第二平行线的第二线性阵列，并且还布置成使得在交点处形成电池 的第一平行线和第二平行线。 斑点减少掩模包括根据下式形成的单元格N1×N2阵列：ATA =＆bgr;δk，l，其中AT是A，＆bgr的转置; 是一个真实和正的常数，dk，l是Kronecker delta，N1≠N2。

公开(公告)号：US20110216390A1

公开(公告)日：2011-09-08

申请号：US13038622

申请日：2011-03-02

申请人： Zhaomin Tong ,  Wenhong Gao ,  Xuyuan Chen ,  Muhammad Nadeem Akram ,  Ouyang Guangmin ,  Kaiying Wang

发明人： Zhaomin Tong ,  Wenhong Gao ,  Xuyuan Chen ,  Muhammad Nadeem Akram ,  Ouyang Guangmin ,  Kaiying Wang

IPC分类号： G02B27/48 ,  G02F1/01

CPC分类号： G02B27/48 ,  G02B5/02 ,  G02F1/01 ,  G03F7/2008 ,  G03F7/70058 ,  G03F7/70116 ,  G03F7/70191 ,  G03F7/702 ,  G03F7/70258 ,  G03F7/70583 ,  G03F7/70758

摘要： Speckle reduction apparatus includes a radiation path and a mask arranged within the radiation path. The mask includes an array of electrically controllable cells configured to form a pattern on the mask that varies with time. The speckle reduction mask includes a first linear array including first parallel lines arranged to change the phase of incident radiation, and a second linear array including second parallel lines arranged to change the phase of incident radiation and further arranged such that cells are formed at the intersections of the first parallel lines and the second parallel lines. The speckle reduction mask includes a N1×N2 array of cells, A, formed according to: ATA=βδk,l, where AT is the transpose of A, β is a real and positive constant, dk,l is Kronecker delta and N1≠N2.

摘要翻译： 斑点减少装置包括布置在辐射路径内的辐射路径和掩模。 该掩模包括电控制单元的阵列，其被配置为形成随着时间变化的掩模上的图案。 散斑减少掩模包括第一线性阵列，其包括布置成改变入射辐射的相位的第一平行线，以及包括布置成改变入射辐射的相位的第二平行线的第二线性阵列，并且还布置成使得在交点处形成电池 的第一平行线和第二平行线。 斑点减少掩模包括根据下式形成的单元格N1×N2阵列：ATA =＆bgr;δk，l，其中AT是A，＆bgr的转置; 是一个真实和正的常数，dk，l是Kronecker delta，N1≠N2。

公开(公告)号：US20120321907A1

公开(公告)日：2012-12-20

申请号：US13582131

申请日：2011-03-01

申请人： Nils Hoivik ,  Birger Stark ,  Anders Elfing ,  Kaiying Wang

发明人： Nils Hoivik ,  Birger Stark ,  Anders Elfing ,  Kaiying Wang

IPC分类号： B23K31/02 ,  B23K20/10 ,  B32B15/00 ,  B23K20/22

CPC分类号： B81C1/00269 ,  B81C2203/0118 ,  B81C2203/035 ,  H01L21/50 ,  H01L23/10 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/276 ,  H01L2224/29011 ,  H01L2224/29082 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32145 ,  H01L2224/83007 ,  H01L2224/83193 ,  H01L2224/83204 ,  H01L2224/83207 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/1461 ,  H01L2924/16235 ,  H01L2924/164 ,  Y10T428/12493 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00

摘要： A metal inter-diffusion bonding method for forming hermetically sealed wafer-level packaging for MEMS devices. A stack of a first metal is provided on a surface of both a first wafer and a second wafer, the first metal being susceptible to oxidation in air; providing a layer of a second metal, having a melting point lower than that of the first metal, on an upper surface of each stack of the first metal, the layer of second metal being sufficiently thick to inhibit oxidation of the upper surface of the first metal; bringing the layer of the second metal on the first wafer into contact with the layer of second metal on the second wafer to form a bond interface; and applying a bonding pressure to the first and second wafers at a bonding temperature lower than the melting point of the second metal to initiate a bond, the bonding pressure being sufficient to deform the layers of the second metal at the bond interface.

摘要翻译： 一种用于形成用于MEMS器件的密封晶片级封装的金属互扩散接合方法。 在第一晶片和第二晶片的表面上设置第一金属的堆叠，第一金属容易在空气中氧化; 在第一金属的每个堆叠的上表面上提供具有低于第一金属的熔点的第二金属层，第二金属层足够厚以抑制第一金属的上表面的氧化 金属; 使第一晶片上的第二金属层与第二晶片上的第二金属层接触以形成键合界面; 以及在低于所述第二金属的熔点的接合温度下对所述第一和第二晶片施加结合压力以引发结合，所述接合压力足以使所述第二金属的所述层在所述键合界面处变形。