摘要:
A PROM device having the improved bit address decoders composed of a plurality of AND gates, each of the AND gates comprising PNP type transistors, to each base of which is applied an address signal from the bit address inverters. Each collector of these transistors is connected to ground, and each emitter is connected to the output terminal of the bit address decoder.
摘要:
A field programmable device having a memory cell member including regular bit lines, regular word lines, regular memory cells connected at the cross points of said regular bit lines and regular word lines, test bit or test word lines, and non-conductive and conductive test memory cells connected at the cross points of said regular bit or regular word lines and test word or test bit lines, wherein the conductivity of a test memory cell is determined by the "1" or "0" of the address signal by which the test word or test bit line to which the test memory cell is connected is selected.
摘要:
A data processor includes an interrupt control unit (102); a direct memory access control unit (103); a selection unit (104) for selecting a connection of ready and error signals from a serial communication control unit and external interrupt and DMA request signals with interrupt inputs to the interrupt and the DMA control units; and a selection setting unit (105) for setting a selection mode of the selection unit, thereby making possible to not only switch between a process by interrupt and a process by DMA transfer by programming according to the application but also make efficient use of the hardware resources in the data processor.
摘要:
An output buffer circuit capable of three-output states of high and low levels and a high impedance. The output buffer circuit includes a detector circuit for detecting that a power source voltage for the buffer circuit is particularly high and for turning the output of the buffer circuit to the high impedance state when the high voltage is detected.
摘要:
A PROM (programmable read-only memory) device includes both PROM cells and peripheral circuits cooperating therewith with the PROM cells and peripheral circuits formed in and on the same bulk. The bulk is formed free of metal which acts as a life time killer. Further, in each of the PROM cells, a buffer layer made of a silicon semiconductor, is introduced between a metal electrode, acting as a bit line, and the surface of the bulk at the position where the PROM cell is formed. Furthermore, the peripheral circuits are made by using Schottky TTL (transistor transistor logic) circuits.
摘要:
A program circuit for permanently storing data into a programmable read only memory. A programming current (received from an external source) is connected to the selected bit line through a Darlington pair which is controlled by the bit decoding circuitry. Thus, the bit decoding circuitry is not required to pass the large programming current, and the programming current is not significantly shunted away from the selected bit line. To facilitate use of the Darlington configuration, a constant current source is provided for each bit line within a set of bit lines. The program circuit includes at least one switching means for connecting the program current to a selected bit line, a bit decoder connected to the control inputs of the switching means for selecting a bit line in response to the addressing signals input to the bit decoder and a control current supplying means for supplying a control current to the control inputs of the switching means.
摘要:
A wait control device according to the present invention instructs a central processing unit (CPU) to wait for the start of its operation until the device receives a process completion signal from a memory unit or an I/O unit, and comprises setting means for setting the time of said CPU to wait for the start of its operation in the memory unit or the I/O unit accessed by the CPU, judgement means for judging system operation to be time out error when no process completion signal is presented during said time of the CPU, and selector means for selecting whether it passes a signal concerning the judgement of the time out error or successively waits for said processing completion signal.
摘要:
A screw-in station protector assembly includes a carrier housing containing a shorting cage which is biased by a compression to urge the cage and gas tube arrester assembly outwardly. The gas tube assembly contained within the cage includes a two electrode gas tube. The gas tube is within a jacket which forms a sealed external back-up air gap protector. The screw-in-assembly is particularly adapted for retro-fitting/replacement of carbon block arresters without modification.
摘要:
A field programmable device comprises regular word lines, regular bit lines, regular memory cells connected at the intersections of the regular word lines and the regular bit lines, at least one test word line adjacent to one of the regular bit lines, and alternately arranged conducting and nonconducting test memory cells arranged at the intersections of the test bit lines and the regular word lines. According to the invention, for the purpose of determining poor insulation between the word lines, the test bit line and the regular word line are insulated by an insulating layer in each nonconducting test memory cell.
摘要:
A field programmable device comprising a memory cell part and a plurality of test bit rows provided along bit lines of the memory cell part and/or a plurality of test word rows provided along word lines of the memory cell part. At least one of the rows of the test bit and/or test word rows is written-in with a write-in ratio different than those of the other test bit and/or test word rows.