Switch circuit for high frequency signals wherein distortion of the signals are suppressed
    1.
    发明授权
    Switch circuit for high frequency signals wherein distortion of the signals are suppressed 有权
    用于高频信号的开关电路,其中信号的失真被抑制

    公开(公告)号:US07915946B2

    公开(公告)日:2011-03-29

    申请号:US12301488

    申请日:2007-05-22

    IPC分类号: H03K17/60

    CPC分类号: H03K17/693 H03K17/165

    摘要: A high-frequency switch circuit includes: a switch section comprised of a field effect transistor having a plurality of bias circuits and a potential generating circuit for generating bias voltages from a control signal and supplying them to the bias circuits. The field effect transistor forms the passage route of a high-frequency signal by turning on and off in accordance with the control signal. The bias circuits are provided to produce a potential difference between the drain terminal and the source terminal of the field effect transistor and to apply bias voltages lower than the voltage of the control signal to the drain terminal, and the source terminal.

    摘要翻译: 高频开关电路包括:开关部分,包括具有多个偏置电路的场效应晶体管和用于从控制信号产生偏置电压并将其提供给偏置电路的电位产生电路。 场效应晶体管根据控制信号通过导通和截止形成高频信号的通路。 提供偏置电路以产生场效应晶体管的漏极端子和源极端子之间的电位差,并将低于控制信号的电压的偏置电压施加到漏极端子和源极端子。

    Amplifying circuit
    2.
    发明申请
    Amplifying circuit 有权
    放大电路

    公开(公告)号:US20060033573A1

    公开(公告)日:2006-02-16

    申请号:US10537470

    申请日:2003-12-03

    IPC分类号: H03G3/30

    CPC分类号: H03F1/56 H03F1/02

    摘要: The present invention provides an amplifying circuit capable of accomplishing high-impedance input/output, and providing a high gain and low power consumption. The amplifier amplifies a signal received through an input terminal, and outputs the signal through an output terminal. A control circuit comprised of the inductors, and the switches turns input/output impedances of the amplifier into a high impedance.

    摘要翻译: 本发明提供一种能够实现高阻抗输入/输出并提供高增益和低功耗的放大电路。 放大器放大通过输入端接收的信号,并通过输出端输出信号。 由电感器组成的控制电路,并且开关将放大器的输入/输出阻抗转换成高阻抗。

    High frequency switch circuit
    4.
    发明申请
    High frequency switch circuit 有权
    高频开关电路

    公开(公告)号:US20050179506A1

    公开(公告)日:2005-08-18

    申请号:US10514394

    申请日:2003-05-19

    摘要: A high-frequency switch circuit has a plurality of high-frequency switches for passing and blocking a high-frequency signal between an input terminal and an output terminal depending on a control potential applied as a control signal, a high-frequency detecting terminal for detecting high-frequency signal passing through the high-frequency switch which is in ON-state, and a voltage boosting circuit for generating a potential for increasing the control potential applied to the high-frequency switch which is in ON-state in order to increase difference between the control potential applied to the high-frequency switch which is in an ON-state and the control potential applied to the high-frequency switch which is in an OFF-state, depending on an intensity or amplitude of the detected high-frequency signal.

    摘要翻译: 高频开关电路具有多个高频开关,用于根据作为控制信号施加的控制电位,在输入端子和输出端子之间传递和阻断高频信号,高频检测端子用于检测 高频信号通过处于导通状态的高频开关,以及升压电路,用于产生用于增加施加到处于导通状态的高频开关的控制电位的电位,以增加差分 根据检测到的高频信号的强度或幅度,施加在处于导通状态的高频开关的控制电位与施加到处于断开状态的高频开关的控制电位之间 。

    Field effect transistor logic circuit with reduced power consumption
    5.
    发明授权
    Field effect transistor logic circuit with reduced power consumption 失效
    场效应晶体管逻辑电路具有降低的功耗

    公开(公告)号:US06201416B1

    公开(公告)日:2001-03-13

    申请号:US09276327

    申请日:1999-03-25

    申请人: Keiichi Numata

    发明人: Keiichi Numata

    IPC分类号: H03K19084

    摘要: There is disclosed a field effect transistor logic circuit having an output terminal to be connected to a gate of an input field effect transistor in a next stage field effect transistor logic circuit. The field effect transistor logic circuit includes a depletion transistor having a drain connected to a first power supply voltage, an enhancement transistor having a drain connected at a node in common to a gate and a source of the depletion transistor. A gate of the enhancement transistor is connected to an input terminal, and a source of the enhancement transistor is connected to a second power supply voltage which is lower than the first power supply voltage. A high level potential limiting circuit is connected between the node and the output terminal, to lower a potential of the output terminal to a level which turns on a drain-source channel of the input field effect transistor of the next stage field effect transistor logic circuit but which never turns on a gate-source of the input field effect transistor of the next stage field effect transistor logic circuit, when the potential of the node is at a high level. A lower level lowering circuit having an input connected to the input terminal, is also connected between the output terminal and the second power supply voltage, for pulling down the potential of the output terminal to the potential of the second power supply voltage when the potential on the node is at a low level.

    摘要翻译: 公开了一种场效应晶体管逻辑电路,其具有在下一级场效应晶体管逻辑电路中连接到输入场效应晶体管的栅极的输出端。 场效应晶体管逻辑电路包括具有连接到第一电源电压的漏极的耗尽型晶体管,具有与栅极共同的节点和耗尽型晶体管的源极连接的漏极的增强型晶体管。 增强晶体管的栅极连接到输入端子,并且增强型晶体管的源极连接到低于第一电源电压的第二电源电压。 在节点和输出端子之间连接一个高电位限制电路,将输出端子的电位降低到接通下一级场效应晶体管逻辑电路的输入场效应晶体管的漏极 - 源极通道的电平 但是当节点的电位处于高电平时,它不会打开下一级场效应晶体管逻辑电路的输入场效应晶体管的栅极源。 具有连接到输入端子的输入的下降电路也连接在输出端子和第二电源电压之间,用于当电位开启时将输出端子的电位降低到第二电源电压的电位 节点处于低电平。

    HIGH-FREQUENCY SWITCH CIRCUIT
    10.
    发明申请
    HIGH-FREQUENCY SWITCH CIRCUIT 有权
    高频开关电路

    公开(公告)号:US20090206910A1

    公开(公告)日:2009-08-20

    申请号:US12301488

    申请日:2007-05-22

    IPC分类号: H03K17/687

    CPC分类号: H03K17/693 H03K17/165

    摘要: A high frequency switch circuit is provided with a switch section composed of a field effect transistor having a plurality of bias circuits; and a potential generating circuit for generating a bias voltage from a control signal and supplying a bias circuit with the bias voltage. The field effect transistor serves as a path for a high frequency signal by turning on and off corresponding to the control signal. The bias circuit is provided for generating a potential difference between the drain terminal and the source terminal of the field effect transistor and for applying a bias voltage lower than the voltage of the control signal to the drain terminal and the source terminal.

    摘要翻译: 高频开关电路设置有由具有多个偏置电路的场效应晶体管组成的开关部分; 以及用于从控制信号产生偏置电压并向偏置电路提供偏置电压的电位产生电路。 场效应晶体管通过与控制信号相对应的导通和截止来作为高频信号的路径。 偏置电路用于产生场效应晶体管的漏极端子和源极端子之间的电位差,并将低于控制信号的电压的偏置电压施加到漏极端子和源极端子。