摘要:
A high-frequency switch circuit includes: a switch section comprised of a field effect transistor having a plurality of bias circuits and a potential generating circuit for generating bias voltages from a control signal and supplying them to the bias circuits. The field effect transistor forms the passage route of a high-frequency signal by turning on and off in accordance with the control signal. The bias circuits are provided to produce a potential difference between the drain terminal and the source terminal of the field effect transistor and to apply bias voltages lower than the voltage of the control signal to the drain terminal, and the source terminal.
摘要:
The present invention provides an amplifying circuit capable of accomplishing high-impedance input/output, and providing a high gain and low power consumption. The amplifier amplifies a signal received through an input terminal, and outputs the signal through an output terminal. A control circuit comprised of the inductors, and the switches turns input/output impedances of the amplifier into a high impedance.
摘要:
Seven novel antibiotic substances could be produced by cultivation of a microbial strain which has been isolated from a soil sample and which is designated as Microbispora sp. A 34030 (deposited under an access number FERM BP-10505 in terms of Budapest Treaty). These seven antibiotic substances are named as bispolide A1, bispolide A2, bispolide A3, bispolide B1, bispolide B2a, bispolide B2b and bispolide B3, respectively. These bispolides are each novel compounds which have a chemical structure as collectively represented by the general formula (III) shown below. These bispolides have each a high antibacterial activity against a variety of bacteria, particularly Gram-positive bacteria and their antibiotic-resistant strains, and hence these bispolides each are effective and useful for therapeutically treating bacterial infections of Gram-positive bacteria in human and animals.The general formula (III):
摘要翻译:可以通过培养已经从土壤样品中分离并被称为微双歧杆菌(Microbispora sp。)的微生物菌株产生七种新型抗生素物质。 A 34030(根据布达佩斯条约保存在访问号FERM BP-10505)。 这七种抗生素物质分别被称为双吡啶A1,双吡啶B2,双吡哆醛A3,双吡啶B1,双吡啶B2a,双吡啶B2b和双吡啶B3。 这些双吡啶衍生物是具有如以下通式(III)统称的化学结构的新化合物。 这些双糖苷酸各自对各种细菌,特别是革兰氏阳性菌及其抗生素抗性菌株具有高的抗菌活性,因此这些双吡啶苷各自对于治疗性地治疗人和动物中革兰氏阳性菌的细菌感染是有效和有用的。 通式(III):
摘要:
A high-frequency switch circuit has a plurality of high-frequency switches for passing and blocking a high-frequency signal between an input terminal and an output terminal depending on a control potential applied as a control signal, a high-frequency detecting terminal for detecting high-frequency signal passing through the high-frequency switch which is in ON-state, and a voltage boosting circuit for generating a potential for increasing the control potential applied to the high-frequency switch which is in ON-state in order to increase difference between the control potential applied to the high-frequency switch which is in an ON-state and the control potential applied to the high-frequency switch which is in an OFF-state, depending on an intensity or amplitude of the detected high-frequency signal.
摘要:
There is disclosed a field effect transistor logic circuit having an output terminal to be connected to a gate of an input field effect transistor in a next stage field effect transistor logic circuit. The field effect transistor logic circuit includes a depletion transistor having a drain connected to a first power supply voltage, an enhancement transistor having a drain connected at a node in common to a gate and a source of the depletion transistor. A gate of the enhancement transistor is connected to an input terminal, and a source of the enhancement transistor is connected to a second power supply voltage which is lower than the first power supply voltage. A high level potential limiting circuit is connected between the node and the output terminal, to lower a potential of the output terminal to a level which turns on a drain-source channel of the input field effect transistor of the next stage field effect transistor logic circuit but which never turns on a gate-source of the input field effect transistor of the next stage field effect transistor logic circuit, when the potential of the node is at a high level. A lower level lowering circuit having an input connected to the input terminal, is also connected between the output terminal and the second power supply voltage, for pulling down the potential of the output terminal to the potential of the second power supply voltage when the potential on the node is at a low level.
摘要:
Hayumicin compounds, obtainable by cultivation of a strain of Actinomadura sp. designated ATCC 55432, and analogs of these compounds. The novel compounds have antitumor as well as antibiotic, particularly antibacterial, activity.
摘要:
In a switching speed fluctuation detecting apparatus, an input terminal for receiving a signal having a definite time period, a series arrangement of at least one first logic circuit connected to the input terminal, a second logic circuit having a first input connected to the input terminal and a second input connected to an output of the series arrangement and an integrator connected to an output of the second logic circuit are provided.
摘要:
Semi-synthetic derivatives of the BU-2867T antibiotics are disclosed. These derivatives are active against experimental mammalian tumors, and may be prepared from enzymatic degradation product(s) of BU-2867T A.
摘要:
Semi-synthetic derivatives of the BU-2867T antibotics are disclosed. These derivatives are active against experimental mammalian tumors, and may be prepared from enzymatic degradation product(s) of BU-2867T A.
摘要:
A high frequency switch circuit is provided with a switch section composed of a field effect transistor having a plurality of bias circuits; and a potential generating circuit for generating a bias voltage from a control signal and supplying a bias circuit with the bias voltage. The field effect transistor serves as a path for a high frequency signal by turning on and off corresponding to the control signal. The bias circuit is provided for generating a potential difference between the drain terminal and the source terminal of the field effect transistor and for applying a bias voltage lower than the voltage of the control signal to the drain terminal and the source terminal.