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公开(公告)号：US07615251B2
公开(公告)日：2009-11-10
申请号：US10511440
申请日：2003-04-22
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45502 , H01L21/02183 , H01L21/02238 , H01L21/02255 , H01L21/02337 , H01L21/31662 , H01L21/31683 , H01L21/67017
摘要： A processing device, comprising a processing container, a shower head structure provided at the ceiling part of the processing container and having a plurality of gas jetting holes for jetting specified processing gas into the processing container formed in the gas jetting surface thereof facing the inside of the processing container, and a placing stand disposed in the processing container so as to face the shower head structure, wherein a head distance between the gas jetting surface and the placing stand and the blowing speed of gas from the gas jetting holes are set within the range surrounded by connecting, in a square shape with straight lines in a plane coordinate system having the head distance plotted on an abscissa and the gas jetting speed plotted on a coordinate, a point where the blowing speed of the gas from the gas jetting holes at the head distance of 15 mm is 32 m/sec, a point where the blowing speed of the gas from the gas jetting holes at the head distance of 15 mm is 67 m/sec, a point where the blowing speed of the gas from the gas jetting holes at the head distance of 77 mm is 40 m/sec, and a point where the blowing speed of the gas from the gas jetting holes at the head distance of 77 mm is 113 m/sec.
摘要翻译： 一种处理装置，包括处理容器，设置在处理容器的顶部的喷淋头结构，并具有多个用于将特定处理气体喷射到形成在其面向其内部的气体喷射表面的处理容器中的气体喷射孔 处理容器和设置在处理容器中以与喷淋头结构相对的放置台，其中，气体喷射表面和放置台之间的距离和来自气体喷射孔的气体的吹送速度设置在 在平面坐标系中具有平直坐标系的方形围绕的距离，其横坐标上绘制了头部距离，并且绘制在坐标上的气体喷射速度，来自气体喷射孔的气体的吹送速度 15mm的头部距离为32m / sec，从头部距离为15mm i处的气体喷射孔的气体的吹送速度 s 67m / sec，从头部距离77mm处的气体喷射孔的气体的吹送速度为40m / sec的点，以及来自气体喷射孔的气体的吹出速度 头距77毫米是113米/秒。
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公开(公告)号：US09136156B2
公开(公告)日：2015-09-15
申请号：US13599082
申请日：2012-08-30
IPC分类号： C23C16/00 , H01L21/687 , H01L21/67 , C23C16/455
CPC分类号： H01L21/68764 , C23C16/455 , C23C16/45506 , C23C16/45551 , H01L21/6719 , H01L21/68771
摘要： A substrate processing apparatus includes a processing chamber; process areas each of which supplies a reaction gas; a turntable that rotates to cause a substrate to pass through the process areas; a gas nozzle provided in one of the process areas; a separating area that supplies a separation gas to separate atmospheres of the process areas; and a cover part configured to cover the gas nozzle and cause the reaction gas supplied from the gas nozzle to remain around the gas nozzle. The cover part includes an upstream side wall, a downstream side wall, and an upper wall. The cover part also includes a guide surface configured to guide the separation gas to flow over a lower part of the upstream side wall to a space above the upper wall. The distance between the gas nozzle and the upstream side wall is greater than or equal to 8 mm.
摘要翻译： 基板处理装置包括处理室; 处理区域各自提供反应气体; 旋转以使基底通过处理区域的转盘; 设置在所述处理区域之一中的气体喷嘴; 分离区域，其供应分离气体以分离处理区域的气氛; 以及盖部，其构造成覆盖所述气体喷嘴，并且使从所述气体喷嘴供给的反应气体保持在所述气体喷嘴周围。 盖部包括上游侧壁，下游侧壁和上壁。 盖部分还包括引导表面，该引导表面构造成引导分离气体在上游侧壁的下部流动到上壁上方的空间。 气体喷嘴与上游侧壁之间的距离大于或等于8mm。
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公开(公告)号：US20130061804A1
公开(公告)日：2013-03-14
申请号：US13599082
申请日：2012-08-30
IPC分类号： C23C16/455
CPC分类号： H01L21/68764 , C23C16/455 , C23C16/45506 , C23C16/45551 , H01L21/6719 , H01L21/68771
摘要： A substrate processing apparatus includes a processing chamber; process areas each of which supplies a reaction gas; a turntable that rotates to cause a substrate to pass through the process areas; a gas nozzle provided in one of the process areas; a separating area that supplies a separation gas to separate atmospheres of the process areas; and a cover part configured to cover the gas nozzle and cause the reaction gas supplied from the gas nozzle to remain around the gas nozzle. The cover part includes an upstream side wall, a downstream side wall, and an upper wall. The cover part also includes a guide surface configured to guide the separation gas to flow over a lower part of the upstream side wall to a space above the upper wall. The distance between the gas nozzle and the upstream side wall is greater than or equal to 8 mm.
摘要翻译： 基板处理装置包括处理室; 处理区域各自提供反应气体; 旋转以使基底通过处理区域的转盘; 设置在所述处理区域之一中的气体喷嘴; 分离区域，其供应分离气体以分离工艺区域的气氛; 以及盖部，其构造成覆盖所述气体喷嘴，并且使从所述气体喷嘴供给的反应气体保持在所述气体喷嘴周围。 盖部包括上游侧壁，下游侧壁和上壁。 盖部分还包括引导表面，该引导表面构造成引导分离气体在上游侧壁的下部流动到上壁上方的空间。 气体喷嘴与上游侧壁之间的距离大于或等于8mm。
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公开(公告)号：US20050223981A1
公开(公告)日：2005-10-13
申请号：US10511440
申请日：2003-04-22
IPC分类号： H01L21/31 , C23C16/44 , C23C16/455 , H01L21/00 , H01L21/316 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45502 , H01L21/02183 , H01L21/02238 , H01L21/02255 , H01L21/02337 , H01L21/31662 , H01L21/31683 , H01L21/67017
摘要： A processing device, comprising a processing container, a shower head structure provided at the ceiling part of the processing container and having a plurality of gas jetting holes for jetting specified processing gas into the processing container formed in the gas jetting surface thereof facing the inside of the processing container, and a placing stand disposed in the processing container so as to face the shower head structure, wherein a head distance between the gas jetting surface and the placing stand and the blowing speed of gas from the gas jetting holes are set within the range surrounded by connecting, in a square shape with straight lines in a plane coordinate system having the head distance plotted on an abscissa and the gas jetting speed plotted on a coordinate, a point where the blowing speed of the gas from the gas jetting holes at the head distance of 15 mm is 32 m/sec, a point where the blowing speed of the gas from the gas jetting holes at the head distance of 15 mm is 67 m/sec, a point where the blowing speed of the gas from the gas jetting holes at the head distance of 77 mm is 40 m/sec, and a point where the blowing speed of the gas from the gas jetting holes at the head distance of 77 mm is 113 m/sec.
摘要翻译： 一种处理装置，包括处理容器，设置在处理容器的顶部的喷淋头结构，并具有多个用于将特定处理气体喷射到形成在其面向其内部的气体喷射表面的处理容器中的气体喷射孔 处理容器和设置在处理容器中以与喷淋头结构相对的放置台，其中，气体喷射表面和放置台之间的距离和来自气体喷射孔的气体的吹送速度设置在 在平面坐标系中具有平直坐标系的方形围绕的距离，其横坐标上绘制了头部距离，并且绘制在坐标上的气体喷射速度，来自气体喷射孔的气体的吹送速度 15mm的头部距离为32m / sec，从头部距离为15mm i处的气体喷射孔的气体的吹送速度 s 67m / sec，从头部距离77mm处的气体喷射孔的气体的吹送速度为40m / sec的点，以及来自气体喷射孔的气体的吹出速度 头距77毫米是113米/秒。
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公开(公告)号：US06454909B1
公开(公告)日：2002-09-24
申请号：US09611665
申请日：2000-07-06
IPC分类号： C23C1434
CPC分类号： C23C16/45565 , C23C16/45521 , C23C16/4557 , C23C16/4583 , C23C16/481 , H01L21/67069
摘要： A processing apparatus includes a processing chamber, a support mechanism provided in the processing chamber to support a wafer having an underlying film formed on a major surface and adjacent side face, and a supply member provided at the processing chamber and spaced from the support mechanism, to supply an incoming gas into the processing chamber. A gas carrying mechanism is provided for selectively sending a film forming gas and etching gas to the gas supply member. A main film is formed on a portion of an underlying film formed on the wafer supported on the support mechanism, by using the film forming gas supplied from the gas supply member. A portion of the underlying film, which is exposed, not covered with the main film, is etched away by the etching gas supplied from the gas supplied member.
摘要翻译： 一种处理装置，包括处理室，设置在处理室中以支撑具有形成在主表面和相邻侧面上的下面的膜的晶片的支撑机构，以及设置在处理室处并与支撑机构间隔开的供给构件， 以将进入的气体供应到处理室中。 提供了一种气体输送机构，用于选择性地将成膜气体和蚀刻气体送到气体供应构件。 通过使用从气体供给构件供给的成膜气体，在支撑在支撑机构上的形成在晶片上的下层膜的一部分上形成主膜。 暴露于未被主膜覆盖的底层膜的一部分被从供气部件供给的蚀刻气体蚀刻掉。
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