中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

125 records (took 0.021 seconds)

    Mobile terminal and controlling method thereof
    1.
    发明授权
    Mobile terminal and controlling method thereof 有权
    移动终端及其控制方法

    公开(公告)号：US09417789B2

    公开(公告)日：2016-08-16

    申请号：US13570093

    申请日：2012-08-08

    Applicant: Ki Young Lee ,  Seon Yong Kim

    Inventor： Ki Young Lee ,  Seon Yong Kim

    IPC: G06F3/041 ,  G06F3/0488 ,  G06F3/0484 ,  H04M1/725

    CPC classification number: G06F3/04883 ,  G06F3/04812 ,  G06F3/0484 ,  H04M1/72563 ,  H04M2250/22

    Abstract: A mobile terminal and controlling method thereof are disclosed. The present invention includes a memory configured to set at least one touch gesture having a specific function assigned thereto, a memory configured to store at least one touch gesture to which a specific function is assigned, a touchscreen having a screen configured to receive the at least one touch gesture, and a controller configured to control the touchscreen to display a trajectory line of the received at least one touch gesture on the screen such that the trajectory line can be discriminated from other information displayed on the screen, to search the memory for the function assigned to the received at least one touch gesture, and to execute the function assigned to the received at least one touch gesture.

    Abstract translation: 公开了一种移动终端及其控制方法。 本发明包括被配置为设置具有分配给其的特定功能的至少一个触摸手势的存储器，被配置为存储分配了特定功能的至少一个触摸手势的存储器，具有被配置为接收至少 以及控制器，其被配置为控制所述触摸屏以在所述屏幕上显示所接收的至少一个触摸手势的轨迹线，使得所述轨迹线可以与屏幕上显示的其他信息区分开，以搜索所述存储器 功能，分配给所接收的至少一个触摸手势，并且执行分配给所接收的至少一个触摸手势的功能。

    Self-polarized mask and self-polarized mask application
    3.
    发明授权
    Self-polarized mask and self-polarized mask application 有权
    自偏振掩模和自偏振掩模应用

    公开(公告)号：US08795930B2

    公开(公告)日：2014-08-05

    申请号：US13565080

    申请日：2012-08-02

    Applicant: Sanggil Bae ,  Ki Young Lee ,  Tony Joung

    Inventor： Sanggil Bae ,  Ki Young Lee ,  Tony Joung

    IPC: G03F1/50 ,  G02B27/28

    CPC classification number: G03F1/00 ,  G03F1/50

    Abstract: A self-polarized mask is provided including a transparent substrate, first and second layers of polarization material consecutively provided on the transparent substrate and polarized in a first and a second direction, respectively. A first region is provided that extends in the first direction and contains only the first layer and no second layer, a second region is provided that extends in the second direction and contains only the second layer and no first layer. Embodiments include exposing a photoresist to light through the mask such that light polarized in the first direction passes through the mask in the first region to expose a first-directional region of the photoresist layer used to form a first-directional semiconductor device structure, and light polarized in the second direction passes through the mask in the second region to expose a second-directional region of the photoresist layer used to form a second-directional semiconductor device structure.

    Abstract translation: 提供了一种自偏振掩模，其包括透明基板，连续设置在透明基板上的第一和第二极化材料层，并分别沿第一和第二方向极化。 提供了沿第一方向延伸并且仅包含第一层且不包含第二层的第一区域，提供在第二方向上延伸并且仅包含第二层且不包含第一层的第二区域。 实施例包括将光致抗蚀剂曝光通过掩模，使得沿第一方向偏振的光通过第一区域中的掩模，以暴露用于形成第一方向半导体器件结构的光致抗蚀剂层的第一方向区域，以及光 在第二方向上极化的第二方向通过第二区域中的掩模以暴露用于形成第二方向半导体器件结构的光致抗蚀剂层的第二方向区域。

    METHOD FOR DIAGNOSING GLIOMA AND SCREENING FOR THE THERAPEUTICS OF GLIOMA THROUGH IDENTIFYING PROTEIN RELOCATION
    4.
    发明申请
    METHOD FOR DIAGNOSING GLIOMA AND SCREENING FOR THE THERAPEUTICS OF GLIOMA THROUGH IDENTIFYING PROTEIN RELOCATION 有权
    通过鉴定蛋白质转移来诊断GLIOMA和GLIOMA治疗方法

    公开(公告)号：US20140106376A1

    公开(公告)日：2014-04-17

    申请号：US14059283

    申请日：2013-10-21

    Applicant: Ki Young LEE ,  Bong Hee LEE ,  Kyung Hee BYUN ,  Sun Ha PAEK

    Inventor： Ki Young LEE ,  Bong Hee LEE ,  Kyung Hee BYUN ,  Sun Ha PAEK

    IPC: G01N33/68

    CPC classification number: G01N33/6893 ,  G01N33/57407 ,  G01N2500/00

    Abstract: The present invention relates to a method for diagnosing glioma by comparing the protein location of an individual to be diagnosed with the normal control nerve cells. More particularly, the present invention relates to a method for diagnosing glioma including determining that an individual has glioma when the expression level of GFRα4 in the endoplasmic reticulum is higher than that in the plasma membrane, and a method for screening a therapeutic agent for glioma. In the diagnostic method of the present invention, the protein expression levels in particular subcellular locations are compared, thereby accurately diagnosing glioma, diagnosing progression of glioma, and predicting prognosis after glioma surgery.

    Abstract translation: 本发明涉及通过比较待诊断个体与正常对照神经细胞的蛋白质位置来诊断胶质瘤的方法。 更具体地，本发明涉及当内质网中GFRα4的表达水平高于质膜时的神经胶质瘤诊断方法，包括确定个体具有神经胶质瘤，以及用于筛选胶质瘤治疗剂的方法。 在本发明的诊断方法中，比较特定亚细胞位置的蛋白质表达水平，从而精确诊断神经胶质瘤，诊断胶质瘤的进展，并预测胶质瘤手术后的预后。

    SELF-POLARIZED MASK AND SELF-POLARIZED MASK APPLICATION
    6.
    发明申请
    SELF-POLARIZED MASK AND SELF-POLARIZED MASK APPLICATION 有权
    自偏振掩模和自偏振掩模应用

    公开(公告)号：US20140038089A1

    公开(公告)日：2014-02-06

    申请号：US13565080

    申请日：2012-08-02

    Applicant: Sanggil Bae ,  Ki Young Lee ,  Tony Joung

    Inventor： Sanggil Bae ,  Ki Young Lee ,  Tony Joung

    IPC: G03F1/00 ,  G03F1/68 ,  G03F7/20

    CPC classification number: G03F1/00 ,  G03F1/50

    Abstract: A self-polarized mask is provided including a transparent substrate, first and second layers of polarization material consecutively provided on the transparent substrate and polarized in a first and a second direction, respectively. A first region is provided that extends in the first direction and contains only the first layer and no second layer, a second region is provided that extends in the second direction and contains only the second layer and no first layer. Embodiments include exposing a photoresist to light through the mask such that light polarized in the first direction passes through the mask in the first region to expose a first-directional region of the photoresist layer used to form a first-directional semiconductor device structure, and light polarized in the second direction passes through the mask in the second region to expose a second-directional region of the photoresist layer used to form a second-directional semiconductor device structure.

    Abstract translation: 提供了一种自偏振掩模，其包括透明基板，连续设置在透明基板上的第一和第二极化材料层，并分别沿第一和第二方向极化。 提供了沿第一方向延伸并且仅包含第一层且不包含第二层的第一区域，提供在第二方向上延伸并且仅包含第二层且不包含第一层的第二区域。 实施例包括将光致抗蚀剂曝光通过掩模，使得沿第一方向偏振的光通过第一区域中的掩模，以暴露用于形成第一方向半导体器件结构的光致抗蚀剂层的第一方向区域，以及光 在第二方向上极化的第二方向通过第二区域中的掩模以暴露用于形成第二方向半导体器件结构的光致抗蚀剂层的第二方向区域。

    Methods of Forming Semiconductor Devices Having Capacitor and Via Contacts
    8.
    发明申请
    Methods of Forming Semiconductor Devices Having Capacitor and Via Contacts 有权
    形成具有电容器和通孔触点的半导体器件的方法

    公开(公告)号：US20130065375A1

    公开(公告)日：2013-03-14

    申请号：US13232075

    申请日：2011-09-14

    Applicant: Ki Young Lee ,  Sanggil Bae ,  Tony Joung

    Inventor： Ki Young Lee ,  Sanggil Bae ,  Tony Joung

    IPC: H01L21/20

    CPC classification number: H01L28/60 ,  H01L21/768 ,  H01L23/5223 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Disclosed herein are various methods of forming semiconductor devices that have capacitor and via contacts. In one example, the method includes forming a first conductive structure and a bottom electrode of a capacitor in a layer of insulating material, forming a layer of conductive material above the first conductive structure and the bottom electrode and performing an etching process on the layer of conductive material to define a conductive material hard mask and a top electrode for the capacitor, wherein the conductive material hard mask is positioned above at least a portion of the first conductive structure. This illustrative method includes the further steps of forming an opening in the conductive material hard mask and forming a second conductive structure that extends through the opening in the conductive material hard mask and conductively contacts the first conductive structure.

    Abstract translation: 本文公开了形成具有电容器和通孔触点的半导体器件的各种方法。 在一个示例中，该方法包括在绝缘材料层中形成电容器的第一导电结构和底电极，在第一导电结构和底电极之上形成导电材料层，并在该层上形成蚀刻工艺 导电材料以限定导电材料硬掩模和用于电容器的顶部电极，其中导电材料硬掩模位于第一导电结构的至少一部分上方。 该说明性方法包括在导电材料硬掩模中形成开口并形成延伸穿过导电材料硬掩模中的开口并导电地接触第一导电结构的第二导电结构的其它步骤。

Patent Agency Ranking