公开(公告)号：US08431464B2

公开(公告)日：2013-04-30

申请号：US12700215

申请日：2010-02-04

申请人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

发明人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

IPC分类号： H01L21/76

CPC分类号： H01L23/53295 ,  C08G77/20 ,  C09D183/04 ,  H01L21/02123 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/3125 ,  H01L21/3212 ,  H01L21/76807 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A silicic coating of 2.4 g/cm3 or higher density, obtained by forming a silicic coating precursor with the use of at least one type of silane compound having a photosensitive functional group and thereafter irradiating the silicic coating precursor with at least one type of light. This silicic coating can be used as a novel barrier film or stopper film for semiconductor device.

摘要翻译： 通过使用至少一种具有光敏官能团的硅烷化合物形成硅涂层前体，然后用至少一种类型的光照射硅涂层前体，得到2.4g / cm 3或更高密度的硅质涂层。 这种硅涂层可用作半导体器件的新型阻挡膜或阻挡膜。

公开(公告)号：US20100007031A1

公开(公告)日：2010-01-14

申请号：US12560193

申请日：2009-09-15

申请人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

发明人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

IPC分类号： H01L23/48 ,  H01L21/306 ,  H01L23/52 ,  C09K3/00 ,  C08K5/54

CPC分类号： C11D11/0047 ,  C11D3/042 ,  C11D3/044 ,  C11D3/162 ,  C11D3/2075 ,  C11D3/30 ,  C11D3/3742 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3209 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2924/14 ,  H01L2924/00

摘要： The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching.

摘要翻译： 本发明提供了一种用于蚀刻后处理硅介电膜的试剂，包括：至少一种选自铵基和胺化合物的含氮物质; 酸; 和含有硅，碳和氢的至少一种含硅化合物。 根据本发明，可以抑制由蚀刻引起的硅电介质膜的介电常数的增加。

公开(公告)号：US20090085170A1

公开(公告)日：2009-04-02

申请号：US12238056

申请日：2008-09-25

申请人： Tadahiro Imada ,  Yoshihiro Nakata ,  Kouta Yoshikawa

发明人： Tadahiro Imada ,  Yoshihiro Nakata ,  Kouta Yoshikawa

IPC分类号： H01L23/58 ,  B32B3/10 ,  H01L21/31

CPC分类号： H01L21/76831 ,  H01L21/3105 ,  H01L21/3205 ,  Y10T428/24802

摘要： An interfacial roughness reducing film which is in contact, on one side thereof, with an insulating film and in contact, on a side opposite from the one side, with wiring comprises a Si—O bond, and is formed using a composition containing a silicon compound that comprises at least one bond of Si—N bonds and Si—Cl bonds wherein the number of Si—N bonds and Si—Cl bonds combined per molecule of the compound is at least two. An interfacial roughness between the interfacial roughness reducing film and the wiring is smaller than that between the interfacial roughness reducing film and the insulating film.

摘要翻译： 在一侧与绝缘膜在一侧相对的一侧与布线接触的界面粗糙度降低膜包括Si-O键，并且使用含有硅的组合物形成 包含Si-N键和Si-Cl键至少一个键的化合物，其中每分子化合物合并的Si-N键和Si-Cl键的数目为至少两个。 界面粗糙度降低膜和布线之间的界面粗糙度小于界面粗糙度降低膜和绝缘膜之间的界面粗糙度。

公开(公告)号：US08716209B2

公开(公告)日：2014-05-06

申请号：US12560193

申请日：2009-09-15

申请人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

发明人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

IPC分类号： H01L21/306 ,  C11D11/00 ,  H01L21/3105

CPC分类号： C11D11/0047 ,  C11D3/042 ,  C11D3/044 ,  C11D3/162 ,  C11D3/2075 ,  C11D3/30 ,  C11D3/3742 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3209 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2924/14 ,  H01L2924/00

摘要： The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching.

摘要翻译： 本发明提供了一种用于蚀刻后处理硅介电膜的试剂，包括：至少一种选自铵基和胺化合物的含氮物质; 酸; 和含有硅，碳和氢的至少一种含硅化合物。 根据本发明，可以抑制由蚀刻引起的硅电介质膜的介电常数的增加。

公开(公告)号：US08164166B2

公开(公告)日：2012-04-24

申请号：US12238056

申请日：2008-09-25

申请人： Tadahiro Imada ,  Yoshihiro Nakata ,  Kouta Yoshikawa

发明人： Tadahiro Imada ,  Yoshihiro Nakata ,  Kouta Yoshikawa

IPC分类号： H01L23/58 ,  H01L21/31 ,  B32B3/10

CPC分类号： H01L21/76831 ,  H01L21/3105 ,  H01L21/3205 ,  Y10T428/24802

摘要： An interfacial roughness reducing film which is in contact, on one side thereof, with an insulating film and in contact, on a side opposite from the one side, with wiring comprises a Si—O bond, and is formed using a composition containing a silicon compound that comprises at least one bond of Si—N bonds and Si—Cl bonds wherein the number of Si—N bonds and Si—Cl bonds combined per molecule of the compound is at least two. An interfacial roughness between the interfacial roughness reducing film and the wiring is smaller than that between the interfacial roughness reducing film and the insulating film.

摘要翻译： 在一侧与绝缘膜在一侧相对的一侧与布线接触的界面粗糙度降低膜包括Si-O键，并且使用含有硅的组合物形成 包含Si-N键和Si-Cl键至少一个键的化合物，其中每分子化合物合并的Si-N键和Si-Cl键的数目为至少两个。 界面粗糙度降低膜和布线之间的界面粗糙度小于界面粗糙度降低膜和绝缘膜之间的界面粗糙度。

公开(公告)号：US20100133692A1

公开(公告)日：2010-06-03

申请号：US12700215

申请日：2010-02-04

申请人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

发明人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

IPC分类号： H01L23/48 ,  H01L21/3205 ,  C09D7/00

CPC分类号： H01L23/53295 ,  C08G77/20 ,  C09D183/04 ,  H01L21/02123 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/3125 ,  H01L21/3212 ,  H01L21/76807 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A silicic coating of 2.4 g/cm3 or higher density, obtained by forming a silicic coating precursor with the use of at least one type of silane compound having a photosensitive functional group and thereafter irradiating the silicic coating precursor with at least one type of light. This silicic coating can be used as a novel barrier film or stopper film for semiconductor device.

摘要翻译： 通过使用至少一种具有光敏官能团的硅烷化合物形成硅涂层前体，然后用至少一种类型的光照射硅涂层前体，得到2.4g / cm 3或更高密度的硅质涂层。 这种硅涂层可用作半导体器件的新型阻挡膜或阻挡膜。

公开(公告)号：US20070232075A1

公开(公告)日：2007-10-04

申请号：US11727001

申请日：2007-03-23

申请人： Tadahiro Imada ,  Yoshihiro Nakata ,  Ei Yano

发明人： Tadahiro Imada ,  Yoshihiro Nakata ,  Ei Yano

IPC分类号： H01L21/31

CPC分类号： H01L21/02126 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/76831

摘要： Techniques for obtaining a wiring layer with a high TDDB resistance and little leakage current, and accordingly, for manufacturing a highly reliable semiconductor device with a small electric power consumption are provided, in which an interfacial roughness reducing film is formed which is in contact with an insulator film and also in contact with a wiring line on the other side surface thereof, and has an interfacial roughness between the wiring line and the interfacial roughness reducing film smaller than that between the insulator film and the interfacial roughness reducing film.

摘要翻译： 提供了具有高TDDB电阻和较小漏电流的布线层获得的技术，并且因此制造具有小功耗的高可靠性半导体器件的技术，其中形成界面粗糙度降低膜，其与 绝缘膜，并且与其另一侧表面上的布线接触，并且布线和界面粗糙度降低膜之间的界面粗糙度小于绝缘膜和界面粗糙度降低膜之间的界面粗糙度。

公开(公告)号：US20100320618A1

公开(公告)日：2010-12-23

申请号：US12862140

申请日：2010-08-24

申请人： Shirou Ozaki ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Yasushi Kobayashi

发明人： Shirou Ozaki ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Yasushi Kobayashi

IPC分类号： H01L23/48 ,  H01L21/768 ,  B32B9/04

CPC分类号： H01L23/5329 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/3121 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  H01L2924/00

摘要： An interconnection substrate including: a first insulating film made of a silicon compound, an adhesion enhancing layer formed on the first insulating film, and a second insulting film made of a silicon compound and formed on the adhesion enhancing layer, wherein the first insulating film and the second insulating film are combined together with a component having a structure represented by General Formula (1) described below: Si—CXHY—Si  General Formula (1) where X is equal to 2Y and is an integer of 1 or more.

摘要翻译： 一种互连基板，包括：由硅化合物制成的第一绝缘膜，形成在第一绝缘膜上的粘合增强层和形成在粘合增强层上的由硅化合物制成的第二绝缘膜，其中第一绝缘膜和 第二绝缘膜与具有下述通式（1）表示的结构的成分组合在一起，其中X等于2Y，为1以上的整数的Si-CXHY-Si通式（1）。

公开(公告)号：US07470975B2

公开(公告)日：2008-12-30

申请号：US11446120

申请日：2006-06-05

申请人： Tadahiro Imada ,  Yoshihiro Nakata ,  Yasushi Kobayashi

发明人： Tadahiro Imada ,  Yoshihiro Nakata ,  Yasushi Kobayashi

IPC分类号： H01L23/58

CPC分类号： H01L21/3125 ,  C08L83/16 ,  C25D5/022 ,  C25D7/12 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/316 ,  H01L21/76807

摘要： It is an object of the present invention to provide, with good yields, a composition for forming an insulation film which allows obtaining an insulation film for a semiconductor device having a low dielectric constant, excellent stress resistance and excellent crack resistance; an insulation film for a semiconductor device formed from the composition for forming an insulation film; and a high quality and highly reliable semiconductor device fabricated using the insulation film for a semiconductor device. This composition for forming an insulation film comprises a polymer of which the main chain is a chain portion which substantially contains only carbon, silicon and hydrogen, and which contains nitrogen in portions other than the main chain. It is preferable that nitrogen exists as a constituent represented by Formula 1 in the polymer.

摘要翻译： 本发明的目的是提供一种用于形成绝缘膜的组合物，该组合物可获得具有低介电常数，优异的耐应力和优异的抗裂性的半导体器件的绝缘膜， 由用于形成绝缘膜的组合物形成的用于半导体器件的绝缘膜; 以及使用半导体器件的绝缘膜制造的高质量和高可靠性的半导体器件。 用于形成绝缘膜的组合物包括其主链是基本上仅含有碳，硅和氢的链部分并且在主链以外的部分含有氮的链段的聚合物。 优选在聚合物中作为由式1表示的成分存在氮。

公开(公告)号：US20070111539A1

公开(公告)日：2007-05-17

申请号：US11395263

申请日：2006-04-03

申请人： Junichi Kon ,  Ei Yano ,  Yoshihiro Nakata ,  Tadahiro Imada

发明人： Junichi Kon ,  Ei Yano ,  Yoshihiro Nakata ,  Tadahiro Imada

IPC分类号： H01L21/31 ,  C08G77/06 ,  B32B27/00

CPC分类号： C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/3122 ,  H01L21/76807

摘要： The present invention aims at providing: a material for forming an adhesion reinforcing layer which can reinforce the adhesion between a low dielectric constant film, especially a low dielectric constant film containing an inorganic material, and other members; an adhesion reinforcing layer formed by the said material and exhibits superior adhesion; a fast and highly reliable semiconductor device having the adhesion reinforcing layer; and a manufacturing method thereof. The material for forming an adhesion reinforcing layer contains at least any one of organoalkoxysilane having a basic functional group, a basic additive and organoalkoxysilane. The adhesion reinforcing layer is formed by the said material. The manufacturing method of a semiconductor device includes a process for forming a low dielectric constant film and, at least before or after the process for forming a low dielectric constant film, a process for forming an adhesion reinforcing layer with the said material.

摘要翻译： 本发明的目的在于提供：一种用于形成粘合增强层的材料，其可以增强低介电常数膜，特别是含有无机材料的低介电常数膜和其它构件之间的粘附性; 由所述材料形成的附着增强层，具有优异的附着力; 具有粘合增强层的快速且高可靠性的半导体器件; 及其制造方法。 用于形成粘合增强层的材料含有至少一种具有碱性官能团的有机烷氧基硅烷，碱性添加剂和有机烷氧基硅烷。 粘合增强层由所述材料形成。 半导体器件的制造方法包括形成低介电常数膜的方法，并且至少在形成低介电常数膜的工艺之前或之后，与所述材料形成粘合增强层的工艺。