Abstract:
Two or more lasers or other temperature sensitive optical devices can be disposed in an operating environment, for example in a common enclosure exposed to the environment. The environment can have a temperature that fluctuates, for example in connection with random events, weather, seasons, etc. Each laser's temperature can track the temperature of the environment in steps, with each laser following a distinct temperature track. The lasers can alternate outputting light into a wavelength division multiplexing channel. For example, during one timeframe, one laser can provide an optical communication signal having a wavelength complying with a wavelength division multiplexing criterion. During another timeframe, the other laser can provide an optical signal having substantially the same wavelength. Operating a laser at an elevated temperature can shorten laser lifetime. To mitigate temperature induced failure, a replacement laser can be engaged when a failure predictor, precursor, or indicator meets a threshold.
Abstract:
A multilayer semiconductor laser includes a substrate on which is formed a semiconductor multilayer heterostructure divided into a plurality of electrically pumped regions and an elongated optically pumped region. The electrically pumped regions generate and deliver optical pump radiation laterally into the elongated optically pumped region. Output radiation is generated and delivered by the optically pumped region.
Abstract:
A laser diode apparatus including a diode laser, optics efficiently collimate the diode laser beam, and a narrow band reflector to provide optical feedback for wavelength stabilization of the diode laser in an extended cavity configuration. The extended cavity laser diode assembly has a low reflectivity coating applied to the front facet, and a narrow-band reflectivity engineered to optimize the output power from the diode laser, leading to power penalty-free operation of the extended cavity laser diode assembly as compared to a free-running diode laser. The extended cavity laser diode assembly can equally applied to a plurality of laser diodes, with either a single or a plurality of optical feedback devices forming the extended cavity configuration.
Abstract:
In a semiconductor laser array of the present invention, a plurality of laser elements (first to fifth laser elements) are disposed such that waveguides of the laser elements are parallel to one another, each of the plurality of laser elements includes a front-end-surface reflection film on a front end surface serving as a light emitting surface of the waveguide, each of the plurality of laser elements includes a rear-end-surface reflection film on a rear end surface opposite to the front end surface with the waveguide sandwiched between the front end surface and the rear end surface, the front-end-surface reflection films of at least two of the plurality of laser elements have different reflectances. the rear-end-surface reflection films of the plurality of laser elements have the same reflectance, and the plurality of laser elements are driven b a single power supply.
Abstract:
The invention relates to optical system including light sources that amplify light using a gain medium. Systems and method of the invention are provided for amplifying light while inhibiting reflections at a peak gain of the gain medium, thereby suppressing parasitic lasing. This allows a system to use a broad range of wavelengths without parasitic lasing, thereby increasing the useable range of a tunable optical filter. In this manner, light at wavelengths not at a peak gain can be used effectively, and the gain medium of an optical amplifier does not limit use of a system to a narrow range of wavelengths associated with a peak gain of the gain medium. A single optical system according to the invention can thus be used for applications that require a broad range of wavelengths.
Abstract:
Two or more lasers or other temperature sensitive optical devices can be disposed in an operating environment, for example in a common enclosure exposed to the environment. The environment can have a temperature that fluctuates, for example in connection with random events, weather, seasons, etc. Each laser's temperature can track the temperature of the environment in steps, with each laser following a distinct temperature track. The lasers can alternate outputting light into a wavelength division multiplexing channel. For example, during one timeframe, one laser can provide an optical communication signal having a wavelength complying with a wavelength division multiplexing criterion. During another timeframe, the other laser can provide an optical signal having substantially the same wavelength. Operating a laser at an elevated temperature can shorten laser lifetime. To mitigate temperature induced failure, a replacement laser can be engaged when a failure predictor, precursor, or indicator meets a threshold.
Abstract:
A semiconductor optical amplifier includes a semiconductor substrate; an optical waveguide that includes an active layer formed on the semiconductor substrate; and a wavelength selective reflection film that is formed on an end face where signal light is incident on the optical waveguide the wavelength selective reflection film allows transmission of the signal light, and reflects light of any wavelength other than the signal light.
Abstract:
A semiconductor optical amplifier includes a semiconductor substrate; an optical waveguide that includes an active layer formed on the semiconductor substrate; and a wavelength selective reflection film that is formed on an end face where signal light is incident on the optical waveguide the wavelength selective reflection film allows transmission of the signal light, and reflects light of any wavelength other than the signal light.
Abstract:
A multilayer semiconductor laser includes a substrate on which is formed a semiconductor multilayer heterostructure divided into a plurality of electrically pumped regions and an elongated optically pumped region. The electrically pumped regions generate and delivering optical pump radiation laterally into the elongated optically pumped region. Output radiation is generated and delivered by the optically pumped region.
Abstract:
An injection locking laser source is provided for an optical communications system. The injection locking laser source includes a laser cavity configured to receive an externally injected low linewidth primary light source. The laser cavity includes a cavity length, a cavity facet reflectivity, and a cavity quality factor. The injection locking laser source further includes an emitting region configured to output a secondary light source injection locked to the externally injected low linewidth primary light source at a stable detuning frequency based on a photon number, a steady-state phase, and a carrier number of the primary light source injected into the cavity.