Phase shifter with photonic band gap structure using ferroelectric thin film
    3.
    发明授权
    Phase shifter with photonic band gap structure using ferroelectric thin film 失效
    具有光子带隙结构的移相器使用铁电薄膜

    公开(公告)号:US07692516B2

    公开(公告)日:2010-04-06

    申请号:US11722299

    申请日:2005-12-20

    IPC分类号: H01P1/18 H01P3/08

    CPC分类号: H01P1/2005 H01P1/181

    摘要: Provided are a phase shifter with a photonic band gap (PBG) structure using a ferroelectric thin film. The phase shifter includes a microstrip transmission line acting as a microwave input/output line and a plurality of tunable capacitors arranged in the microstrip transmission line at regular intervals. Electrodes disposed on a substrate apply DC voltages to the plurality of tunable capacitors. Radio frequency (RF) chokes and quarter wavelength radial-stubs are connected between the electrodes and the microstrip transmission line in order to prevent high frequency signals from flowing into a DC bias terminal. A plurality of PBGS are periodically arrayed on a ground plane of the substrate.

    摘要翻译: 提供一种使用铁电薄膜的具有光子带隙(PBG)结构的移相器。 移相器包括用作微波输入/输出线的微带传输线和以规则间隔布置在微带传输线中的多个可调谐电容器。 设置在基板上的电极向多个可调谐电容器施加直流电压。 射频(RF)扼流圈和四分之一波长径向短截线连接在电极和微带传输线之间,以防止高频信号流入直流偏置端。 多个PBGS周期性排列在基板的接地平面上。

    Phase Shifter with Photonic Band Gap Structure Using Ferroelectric Thin Film
    4.
    发明申请
    Phase Shifter with Photonic Band Gap Structure Using Ferroelectric Thin Film 失效
    使用铁电薄膜的光子带隙结构的移相器

    公开(公告)号:US20080116995A1

    公开(公告)日:2008-05-22

    申请号:US11722299

    申请日:2005-12-20

    IPC分类号: H01P1/18

    CPC分类号: H01P1/2005 H01P1/181

    摘要: Provided are a phase shifter with a photonic band gap (PBG) structure using a ferroelectric thin film. The phase shifter includes a microstrip transmission line acting as a microwave input/output line and a plurality of tunable capacitors arranged in the microstrip transmission line at regular intervals. Electrodes disposed on a substrate apply DC voltages to the plurality of tunable capacitors. Radio frequency (RF) chokes and quarter wavelength radial-stubs are connected between the electrodes and the microstrip transmission line in order to prevent high frequency signals from flowing into a DC bias terminal. A plurality of PBGS are periodically arrayed on a ground plane of the substrate.

    摘要翻译: 提供一种使用铁电薄膜的具有光子带隙(PBG)结构的移相器。 移相器包括用作微波输入/输出线的微带传输线和以规则间隔布置在微带传输线中的多个可调谐电容器。 设置在基板上的电极向多个可调谐电容器施加直流电压。 射频(RF)扼流圈和四分之一波长径向短截线连接在电极和微带传输线之间,以防止高频信号流入直流偏置端。 多个PBGS周期性排列在基板的接地平面上。

    Terahertz continuous wave generator
    5.
    发明授权
    Terahertz continuous wave generator 有权
    太赫兹连续波发生器

    公开(公告)号:US08730567B2

    公开(公告)日:2014-05-20

    申请号:US13291225

    申请日:2011-11-08

    IPC分类号: G02F1/35 G02F1/01 H01S3/00

    摘要: A terahertz continuous wave generator includes: an optical intensity modulator configured to modulate an optical signal into DSB optical signals; a local oscillator configured to generate a modulation signal for modulating the optical signal inputted to the optical intensity modulator into DSB optical signals; a notch filter configured to filter an optical signal with a specific frequency; an optical fiber amplifier configured to amplify an output signal of the optical intensity modulator; an optical circulator configured to transmit the optical signal inputted to the optical fiber amplifier to the notch filter and transmit the optical signal reflected from the notch filter to an input of the optical intensity modulator; an optical coupler configured to apply the optical signal to the optical intensity modulator; and an OE converter configured to photomix the DSB signals outputted through the notch filter.

    摘要翻译: 太赫兹连续波发生器包括:光强调制器,被配置为将光信号调制成DSB光信号; 本地振荡器,被配置为产生用于将输入到所述光强度调制器的光信号调制成DSB光信号的调制信号; 陷波滤波器,被配置为滤波具有特定频率的光信号; 配置为放大所述光强调制器的输出信号的光纤放大器; 光循环器,被配置为将输入到光纤放大器的光信号发送到陷波滤波器,并将从陷波滤波器反射的光信号发射到光强度调制器的输入端; 光耦合器,被配置为将光信号施加到光强度调制器; 以及被配置为对通过陷波滤波器输出的DSB信号进行光混合的OE转换器。

    Device using a metal-insulator transition
    6.
    再颁专利
    Device using a metal-insulator transition 失效
    使用金属 - 绝缘体转换的器件

    公开(公告)号:USRE42530E1

    公开(公告)日:2011-07-12

    申请号:US11234816

    申请日:2005-09-23

    CPC分类号: H01L49/003

    摘要: A switching field effect transistor includes a substrate; a Mott-Brinkman-Rice insulator formed on the substrate, the Mott-Brinkman-Rice insulator undergoing abrupt metal-insulator transition when holes added therein; a dielectric layer formed on the Mott-Brinkman-Rice insulator, the dielectric layer adding holes into the Mott-Brinkman-Rice insulator when a predetermined voltage is applied thereto; a gate electrode formed on the dielectric layer, the gate electrode applying the predetermined voltage to the dielectric layer; a source electrode formed to be electrically connected to a first portion of the Mott-Brinkman-Rice insulator; and a drain electrode formed to be electrically connected to a second portion of the Mott-Brinkman-Rice insulator.

    摘要翻译: 开关场效应晶体管包括基板; Mott-Brinkman-Rice绝缘子形成在基底上,Mott-Brinkman-Rice绝缘子在其中添加孔时经历突然的金属 - 绝缘体转变; 形成在Mott-Brinkman-Rice绝缘体上的电介质层,当施加预定电压时,介电层将孔插入到Mott-Brinkman-Rice绝缘体中; 形成在所述电介质层上的栅电极,所述栅电极向所述电介质层施加预定电压; 形成为电连接到所述Mott-Brinkman-Rice绝缘体的第一部分的源电极; 以及形成为与Mott-Brinkman-Rice绝缘体的第二部分电连接的漏电极。

    Switching field effect transistor using abrupt metal-insulator transition

    公开(公告)号:US06624463B2

    公开(公告)日:2003-09-23

    申请号:US10188522

    申请日:2002-07-02

    IPC分类号: H01L29772

    CPC分类号: H01L49/003

    摘要: A switching field effect transistor includes a substrate; a Mott-Brinkman-Rice insulator formed on the substrate, the Mott-Brinkman-Rice insulator undergoing abrupt metal-insulator transition when holes added therein; a dielectric layer formed on the Mott-Brinkman-Rice insulator, the dielectric layer adding holes into the Mott-Brinkman-Rice insulator when a predetermined voltage is applied thereto; a gate electrode formed on the dielectric layer, the gate electrode applying the predetermined voltage to the dielectric layer; a source electrode formed to be electrically connected to a first portion of the Mott-Brinkman-Rice insulator; and a drain electrode formed to be electrically connected to a second portion of the Mott-Brinkman-Rice insulator.