公开(公告)号：US20110173918A1

公开(公告)日：2011-07-21

申请号：US12689343

申请日：2010-01-19

申请人： Lyndon Graham

发明人： Lyndon Graham

IPC分类号： E04G21/26 ,  B23P17/00 ,  E04B1/38

CPC分类号： E04G21/26 ,  Y10T29/49623

摘要： An adjustable wall brace may include: (a) an adjustment portion including a right-hand threaded portion and a left-hand threaded portion; (b) an extension portion including a threaded aperture configured to received at least one of the right-hand threaded portion and the left-hand threaded portion; and (c) a base portion including a threaded aperture configured to received at least one of the right-hand threaded portion and the left-hand threaded portion.A method for manufacturing an adjustable wall brace may include: (a) disposing an extension member within an extension receiving member; (b) receiving a first threaded portion of a dual-threaded adjustment mechanism within a threaded receiving aperture of at least one of the extension member and the extension receiving member; and (c) receiving a second threaded portion of the dual-threaded adjustment within a second threaded receiving aperture.

摘要翻译： 可调节的壁支架可以包括：（a）包括右旋螺纹部分和左旋螺纹部分的调节部分; （b）延伸部分，包括螺纹孔，构造成容纳右手螺纹部分和左旋螺纹部分中的至少一个; 和（c）包括构造成容纳右手螺纹部分和左旋螺纹部分中的至少一个的螺纹孔的基部。 制造可调壁支架的方法可以包括：（a）在延伸容纳构件内设置延伸构件; （b）在所述延伸构件和所述延伸接收构件中的至少一个的螺纹接收孔内接收双螺纹调节机构的第一螺纹部分; 和（c）在第二螺纹接收孔内接收所述双螺纹调节件的第二螺纹部分。

公开(公告)号：US20070114133A1

公开(公告)日：2007-05-24

申请号：US11593362

申请日：2006-11-06

申请人： Thomas Ritzdorf ,  Lyndon Graham

发明人： Thomas Ritzdorf ,  Lyndon Graham

IPC分类号： C25D7/12

CPC分类号： H01L21/2885 ,  C25D5/02 ,  C25D5/10 ,  C25D5/18 ,  C25D5/50 ,  C25D7/123 ,  H01L21/76877 ,  H01L21/76883

摘要： A method for filling recessed micro-structures at a surface of a semiconductor wafer with metallization is set forth. In accordance with the method, a metal layer is deposited into the micro-structures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed micro-structures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties.

公开(公告)号：US20220224023A1

公开(公告)日：2022-07-14

申请号：US17351897

申请日：2021-06-18

申请人： Lyndon Graham ,  Tammy Graham

发明人： Lyndon Graham ,  Tammy Graham

IPC分类号： H01R4/22 ,  H01R4/12 ,  G01R15/12

摘要： This present invention relates to an electric testing assistance tool in the form a wire nut or electrical connector. The tool is a funnel shaped flame resistant and insulating device and has a top end and a bottom end with curved walls. The top end includes a central hole to receive a testing probe of a tester device. The device has an internal metal spiral thread connected to a metal ball connector. The metal spiral thread twistable about a plurality of wire end leads. The leads extending from the bottom end opening are connected to a target wiring whose electrical parameters and continuity is to be measured using the electric testing assistance tool. The testing probe can be inserted through the central hole to contact the metal ball to measure the electric parameters and continuity of the target wiring.

公开(公告)号：US20070215481A1

公开(公告)日：2007-09-20

申请号：US11694733

申请日：2007-03-30

申请人： Lyndon Graham ,  Thomas Ritzdorf ,  Jeffrey Turner

发明人： Lyndon Graham ,  Thomas Ritzdorf ,  Jeffrey Turner

IPC分类号： C25D7/12

CPC分类号： H01L21/67751 ,  C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25D21/08 ,  H01L21/67126

摘要： Methods and apparatuses for in-situ cleaning of semiconductor electroplating electrodes to remove plating metal without requiring the manual removal of the electrodes from the semiconductor plating equipment. The electrode is placed into the plating liquid and an electrical current having reverse polarity is passed between the electrode and plating liquid. Plating deposits which have accumulated on the electrode are electrochemically dissolved and removed from the electrode.

摘要翻译： 用于半导体电镀电极的原位清洁以去除电镀金属的方法和装置，而不需要从半导体电镀设备手动去除电极。 将电极放置在电镀液中，并且具有相反极性的电流在电极和镀液之间通过。 积聚在电极上的电镀沉积物电化学溶解并从电极中去除。

公开(公告)号：US20060079085A1

公开(公告)日：2006-04-13

申请号：US11286084

申请日：2005-11-23

申请人： Rajesh Baskaran ,  Bioh Kim ,  Linlin Chen ,  Lyndon Graham

发明人： Rajesh Baskaran ,  Bioh Kim ,  Linlin Chen ,  Lyndon Graham

IPC分类号： C25D5/34 ,  H01L21/44

CPC分类号： H01L21/76843 ,  C23C18/1605 ,  C25D3/38 ,  C25D5/18 ,  C25D5/34 ,  C25D5/38 ,  C25D5/54 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/321 ,  H01L21/32134 ,  H01L21/76846 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76885 ,  H01L2221/1089

摘要： The present invention is directed to a process for producing structures containing metallized features for use in microelectronic workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.

摘要翻译： 本发明涉及一种用于生产用于微电子工件的包含金属化特征的结构的方法。 该方法处理阻挡层以促进阻挡层和金属化特征之间的粘附。 根据本发明的用于促进阻挡层和金属化特征之间的粘合的合适方式包括阻挡层的酸处理，阻挡层的电解处理或者阻挡层和金属化特征之间的结合层的沉积。 因此，本发明改变了阻挡层的外表面，使其更适合于在屏障上电沉积金属，因此不需要PVD或CVD种子层沉积工艺。

公开(公告)号：US20050061675A1

公开(公告)日：2005-03-24

申请号：US10716191

申请日：2003-11-18

申请人： Martin Bleck ,  Lyndon Graham ,  Kyle Hanson

发明人： Martin Bleck ,  Lyndon Graham ,  Kyle Hanson

IPC分类号： H01L21/687 ,  C25D5/02 ,  C25D17/00

CPC分类号： H01L21/68728 ,  H01L21/68785 ,  H01L21/68792

摘要： A semiconductor workpiece holder used in electroplating systems for plating metal layers onto a semiconductor workpieces, and is of particular advantage in connection with plating copper onto semiconductor materials. The workpiece holder includes electrode assemblies which have a contact part which connects to a distal end of an electrode shaft and bears against the workpiece and conducts current therebetween. The contact part is preferably made from a corrosion resistant material, such as platinum. The electrode assembly also preferably includes a dielectric layer which covers the distal end of the electrode shaft and seals against the contact part to prevent plating liquid from corroding the joint between these parts.

摘要翻译： 一种用于电镀系统中用于将金属层镀在半导体工件上的半导体工件保持器，并且在将铜电镀到半导体材料上方面具有特别的优点。 工件保持器包括电极组件，其具有接触部分，该接触部分连接到电极轴的远端并承受工件并在其间传导电流。 接触部分优选由诸如铂的耐腐蚀材料制成。 电极组件还优选包括覆盖电极轴的远端并密封接触部分的电介质层，以防止电镀液腐蚀这些部件之间的接合部。

公开(公告)号：US20240039175A1

公开(公告)日：2024-02-01

申请号：US18483990

申请日：2023-10-10

申请人： Lyndon Graham ,  Tammy Graham

发明人： Lyndon Graham ,  Tammy Graham

IPC分类号： H01R4/22 ,  G01R15/12 ,  H01R4/12

CPC分类号： H01R4/22 ,  G01R15/125 ,  H01R4/12

摘要： The present invention relates to an electric testing assistance tool in the form a wire nut or electrical connector. The tool is a funnel shaped flame resistant and insulating device and has a top end and a bottom end with curved walls. The top end includes a central hole to receive a testing probe of a tester device. The device has an internal metal spiral thread connected to a metal ball connector. The metal spiral thread twistable about a plurality of wire end leads. The leads extending from the bottom end opening are connected to a target wiring whose electrical parameters and continuity is to be measured using the electric testing assistance tool. The testing probe can be inserted through the central hole to contact the metal ball to measure the electric parameters and continuity of the target wiring.

公开(公告)号：US11824317B2

公开(公告)日：2023-11-21

申请号：US17351897

申请日：2021-06-18

申请人： Lyndon Graham ,  Tammy Graham

发明人： Lyndon Graham ,  Tammy Graham

IPC分类号： H01R4/22 ,  G01R15/12 ,  H01R4/12

CPC分类号： H01R4/22 ,  G01R15/125 ,  H01R4/12

摘要： This present invention relates to an electric testing assistance tool in the form a wire nut or electrical connector. The tool is a funnel shaped flame resistant and insulating device and has a top end and a bottom end with curved walls. The top end includes a central hole to receive a testing probe of a tester device. The device has an internal metal spiral thread connected to a metal ball connector. The metal spiral thread twistable about a plurality of wire end leads. The leads extending from the bottom end opening are connected to a target wiring whose electrical parameters and continuity is to be measured using the electric testing assistance tool. The testing probe can be inserted through the central hole to contact the metal ball to measure the electric parameters and continuity of the target wiring.

公开(公告)号：US20060208272A1

公开(公告)日：2006-09-21

申请号：US11439720

申请日：2006-05-23

申请人： Thomas Ritzdorf ,  Lyndon Graham

发明人： Thomas Ritzdorf ,  Lyndon Graham

IPC分类号： H01L33/00

CPC分类号： H01L21/2885 ,  C25D5/02 ,  C25D5/10 ,  C25D5/18 ,  C25D5/50 ,  C25D7/123 ,  H01L21/76877 ,  H01L21/76883

摘要： A method for filling recessed micro-structures at a surface of a semiconductor wafer with metallization is set forth. In accordance with the method, a metal layer is deposited into the micro-structures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed micro-structures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties.

公开(公告)号：US20060084264A1

公开(公告)日：2006-04-20

申请号：US11292380

申请日：2005-11-23

申请人： Rajesh Baskaran ,  Bioh Kim ,  Linlin Chen ,  Lyndon Graham

发明人： Rajesh Baskaran ,  Bioh Kim ,  Linlin Chen ,  Lyndon Graham

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  C23C18/1605 ,  C25D3/38 ,  C25D5/18 ,  C25D5/34 ,  C25D5/38 ,  C25D5/54 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/321 ,  H01L21/32134 ,  H01L21/76846 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76885 ,  H01L2221/1089

摘要： The present invention is directed to a process for producing structures containing metallized features for use in microelectronic workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.

摘要翻译： 本发明涉及一种用于生产用于微电子工件的包含金属化特征的结构的方法。 该方法处理阻挡层以促进阻挡层和金属化特征之间的粘附。 根据本发明的用于促进阻挡层和金属化特征之间的粘附的合适方法包括阻挡层的酸处理，阻挡层的电解处理或者阻挡层和金属化特征之间的结合层的沉积。 因此，本发明改变了阻挡层的外表面，使其更适合于在屏障上电沉积金属，因此不需要PVD或CVD种子层沉积工艺。