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    SEMICONDUCTOR DEVICE INCLUDING TRANSISTORS
    2.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING TRANSISTORS 有权
    包括晶体管的半导体器件

    公开(公告)号：US20130161751A1

    公开(公告)日：2013-06-27

    申请号：US13600375

    申请日：2012-08-31

    Applicant: Hoi-sung CHUNG ,  Dong-hyuk KIM ,  Myung-sun KIM ,  Dong-suk SHIN

    Inventor： Hoi-sung CHUNG ,  Dong-hyuk KIM ,  Myung-sun KIM ,  Dong-suk SHIN

    IPC: H01L27/088 ,  H01L29/78

    CPC classification number: H01L27/088 ,  H01L21/823412 ,  H01L21/823418 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

    Abstract: A semiconductor device includes a substrate having a channel region, a gate insulation layer on the channel region, a gate electrode on the gate insulation layer, and source and drain regions in recesses in the substrate on both sides of the channel region, respectively. The source and drain regions include a lower main layer whose bottom surface is located at level above the bottom of a recess and lower than that of the bottom surface of the gate insulation layer, and a top surface no higher than the level of the bottom surface of the gate insulation layer, and an upper main layer contacting the lower main layer and whose top surface extends to a level higher than that of the bottom surface of the gate insulation layer, and in which the lower layer has a Ge content higher than that of the upper layer.

    Abstract translation: 半导体器件包括具有沟道区的衬底，沟道区上的栅极绝缘层，栅极绝缘层上的栅电极，以及沟道区两侧的衬底中的凹槽中的源极和漏极区。 源极和漏极区域包括下表面位于凹槽底部的平面以上并且低于栅极绝缘层的底表面的下主层，以及不高于底表面的高度的顶表面 的栅极绝缘层的上部主层和与下部主层接触的上部主层，其上表面延伸到比栅极绝缘层的底面高的水平，并且其中下层的Ge含量高于栅极绝缘层的底面。 的上层。

    System and method for building home domain using smart card which contains information of home network member device
    3.
    发明授权
    System and method for building home domain using smart card which contains information of home network member device 有权
    使用包含家庭网络成员设备信息的智能卡构建家庭网域的系统和方法

    公开(公告)号：US08347076B2

    公开(公告)日：2013-01-01

    申请号：US11000244

    申请日：2004-12-01

    Applicant: Jae-heung Lee ,  Myung-sun Kim ,  Su-hyun Nam ,  Yong-jin Jang ,  Yang-lim Choi

    Inventor： Jae-heung Lee ,  Myung-sun Kim ,  Su-hyun Nam ,  Yong-jin Jang ,  Yang-lim Choi

    IPC: H04L29/06 ,  H04L9/32 ,  G06F15/16

    CPC classification number: H04L41/0809 ,  H04L9/006 ,  H04L9/0825 ,  H04L9/083 ,  H04L12/2807 ,  H04L41/0813 ,  H04L63/065 ,  H04L63/0853 ,  H04L2012/2849 ,  H04L2209/60 ,  H04L2463/062

    Abstract: A home domain building method and system that allow devices to join a home domain using smart cards. In the method, a master device reads device information from a smart card having a device ID and a device key as the device information of a guest device authenticated as a legal device and transmits a challenge request signal to the guest device, the guest device randomly generates a challenge value in response to the challenge request signal, the master device encrypts the challenge value using the device key of the guest device and transmits the encrypted challenge value to the guest device, the guest device decrypts the encrypted challenge value, and if the decrypted challenge value is the same as the challenge value generated in response to the challenge request signal, the guest device allows the master device to join the guest device in the home domain.

    Abstract translation: 家庭网域构建方法和系统，允许设备使用智能卡加入家乡域。 在该方法中，主设备从具有设备ID和设备密钥的智能卡读取设备信息作为被认证为合法设备的客户设备的设备信息，并且将访客设备随机地发送询问请求信号 响应于挑战请求信号产生询问值，主设备使用访客设备的设备密钥对挑战值进行加密，并将加密质询值发送给访客设备，访客设备解密加密质询值，如果 解密的挑战值与响应于挑战请求信号而产生的挑战值相同，客体设备允许主设备加入归属域中的客户设备。

    Method of packaging broadcast contents
    4.
    发明授权
    Method of packaging broadcast contents 有权
    打包播放内容的方法

    公开(公告)号：US08301571B2

    公开(公告)日：2012-10-30

    申请号：US11402981

    申请日：2006-04-13

    Applicant: Sun-nam Lee ,  Myung-sun Kim ,  Sung-hyu Han ,  Young-sun Yoon ,  Jae-heung Lee ,  Bong-seon Kim ,  Moon-young Choi

    Inventor： Sun-nam Lee ,  Myung-sun Kim ,  Sung-hyu Han ,  Young-sun Yoon ,  Jae-heung Lee ,  Bong-seon Kim ,  Moon-young Choi

    IPC: G06F21/00

    CPC classification number: G06Q30/02

    Abstract: A method of packaging broadcast contents are provided. The method includes: extracting a copy control bit from input broadcast contents and determining whether the broadcast contents will be stored after being encrypted based on the extracted copy control bit; creating usage rule information which includes an encryption method of the broadcast contents if it is determined that the broadcast contents will be stored after being encrypted; extracting the copy control bit from each new broadcast content sequentially input and detecting broadcast contents which include copy control bits indicating that the broadcast contents will be stored without being encrypted; and encrypting the input broadcast contents through the broadcast contents before the detected broadcast contents using the encryption method and packaging and storing the encrypted broadcast contents and the usage rule information. Therefore, the unauthorized copying of broadcast contents transmitted through a digital broadcast receiver can be prevented.

    Abstract translation: 提供一种封装广播内容的方法。 该方法包括：从输入广播内容中提取复制控制位，并根据所提取的复制控制位确定是否在加密之后存储广播内容; 创建使用规则信息，如果确定在加密之后将存储广播内容，则包括广播内容的加密方法; 从每个新的广播内容中提取复制控制位，顺序地输入和检测包括指示广播内容将不被加密的复制控制位的广播内容; 并且通过使用加密方法的检测到的广播内容之前的广播内容来加密输入的广播内容，并且包装和存储加密的广播内容和使用规则信息。 因此，可以防止通过数字广播接收机发送的广播内容的未经授权的复制。

    TRANSISTORS AND METHODS OF MANUFACTURING THE SAME
    5.
    发明申请
    TRANSISTORS AND METHODS OF MANUFACTURING THE SAME 有权
    晶体管及其制造方法

    公开(公告)号：US20120223364A1

    公开(公告)日：2012-09-06

    申请号：US13410475

    申请日：2012-03-02

    Applicant: Hoi-Sung CHUNG ,  Dong-Suk Shin ,  Dong-Hyuk Kim ,  Myung-Sun Kim

    Inventor： Hoi-Sung CHUNG ,  Dong-Suk Shin ,  Dong-Hyuk Kim ,  Myung-Sun Kim

    IPC: H01L29/78 ,  H01L21/8238 ,  H01L21/20

    CPC classification number: H01L21/823807 ,  H01L21/30608 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/165 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7848

    Abstract: In a method of manufacturing a transistor, a gate structure is formed on a substrate including silicon. An upper portion of the substrate adjacent to the gate structure is etched to form a first recess in the substrate. A preliminary first epitaxial layer including silicon-germanium is formed in the first recess. An upper portion of the preliminary first epitaxial layer is etched to form a second recess on the preliminary first epitaxial layer. In addition, a portion of the preliminary first epitaxial layer adjacent to the second recess is etched to thereby transform the preliminary first epitaxial layer into a first epitaxial layer. A second epitaxial layer including silicon-germanium is formed in the second recess located on the first epitaxial layer.

    Abstract translation: 在制造晶体管的方法中，在包括硅的衬底上形成栅极结构。 蚀刻与栅极结构相邻的衬底的上部，以在衬底中形成第一凹部。 在第一凹部中形成包括硅 - 锗的初步的第一外延层。 蚀刻初步第一外延层的上部以在初步第一外延层上形成第二凹槽。 此外，蚀刻与第二凹槽相邻的初步第一外延层的一部分，从而将初步第一外延层转变为第一外延层。 在位于第一外延层上的第二凹槽中形成包括硅 - 锗的第二外延层。

    Scrambling apparatus and method using conversion of motion vector information of video data
    7.
    发明授权
    Scrambling apparatus and method using conversion of motion vector information of video data 有权
    加扰装置和方法，使用视频数据的运动矢量信息的转换

    公开(公告)号：US07826615B2

    公开(公告)日：2010-11-02

    申请号：US11049734

    申请日：2005-02-04

    Applicant: Su-hyun Nam ,  Myung-sun Kim ,  Yong-jin Jang ,  Sun-nam Lee ,  Jae-heung Lee ,  Sang-su Choi

    Inventor： Su-hyun Nam ,  Myung-sun Kim ,  Yong-jin Jang ,  Sun-nam Lee ,  Jae-heung Lee ,  Sang-su Choi

    IPC: H04N7/167

    CPC classification number: H04N19/517 ,  H04N7/1675 ,  H04N19/61 ,  H04N21/2347

    Abstract: A scrambling apparatus and method are provided for increasing randomness without damaging compression efficiency of total video data by selectively and randomly performing conversion when converting motion vector codes of compressed video data into other motion vector codes indicating other motion vector values, and more particularly, by performing conditional conversion only if a predetermined condition is satisfied when selective conversion of motion vector codes is performed. The scrambling apparatus includes a conversion motion vector code table generator generating a conversion motion vector code table comprising motion vector codes obtained by converting motion vector codes corresponding to motion vector values of input video data in a standard motion vector code table; and a conversion controller randomly determining whether a certain motion vector value is encoded using the conversion motion vector code table or the standard motion vector code table.

    Abstract translation: 提供一种加扰装置和方法，用于通过在将压缩视频数据的运动矢量代码转换为指示其他运动矢量值的其他运动矢量代码时，通过有选择地和随机地执行转换来增加总体视频数据的压缩效率，而不损害总视频数据的压缩效率，更具体地说， 只有当执行运动矢量代码的选择性转换时满足预定条件时才进行条件转换。 该加扰装置包括：生成转换运动矢量代码表的转换运动矢量代码表，该转换运动矢量代码表包括通过对与运动矢量代码表中的输入图像数据的运动矢量值相对应的运动矢量代码而获得的运动矢量代码; 并且转换控制器随机地确定使用转换运动矢量代码表或标准运动矢量代码表是否对某个运动矢量值进行编码。

    Semiconductor device including field effect transistor and method of forming the same
    8.
    发明授权
    Semiconductor device including field effect transistor and method of forming the same 有权
    包括场效晶体管的半导体器件及其形成方法

    公开(公告)号：US07791146B2

    公开(公告)日：2010-09-07

    申请号：US11857157

    申请日：2007-09-18

    Applicant: Myung-Sun Kim ,  Hwa-Sung Rhee ,  Tetsuji Ueno ,  Ho Lee ,  Ji-Hye Yi

    Inventor： Myung-Sun Kim ,  Hwa-Sung Rhee ,  Tetsuji Ueno ,  Ho Lee ,  Ji-Hye Yi

    IPC: H01L29/76

    CPC classification number: H01L29/665 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

    Abstract: A semiconductor device includes a gate insulator and a gate electrode stacked on a substrate, a source/drain pattern which fills a recess region formed at opposite sides adjacent to the gate electrode, the source/drain pattern being made of silicon-germanium doped with dopants and a metal germanosilicide layer disposed on the source/drain pattern. The metal germanosilicide layer is electrically connected to the source/drain pattern. Moreover, a proportion of germanium amount to the sum of the germanium amount and silicon amount in the metal germanosilicide layer is lower than that of germanium amount to the sum of the germanium amount and silicon amount in the source/drain pattern.

    Abstract translation: 半导体器件包括栅极绝缘体和堆叠在衬底上的栅电极，源极/漏极图案填充形成在与栅电极相邻的相对侧的凹陷区域，源极/漏极图案由掺杂有掺杂剂的硅 - 锗构成 和设置在源极/漏极图案上的金属锗硅化物层。 金属锗硅化物层电连接到源极/漏极图案。 此外，与锗源锗排出图案中的锗量和硅量之和的锗量相比，锗量与金锗烷硅化物层中的锗量和硅量之和的比例低。

    Method and apparatus for limiting number of times contents can be accessed using hash chain
    9.
    发明授权
    Method and apparatus for limiting number of times contents can be accessed using hash chain 有权
    使用哈希链可以访问内容的次数的方法和装置

    公开(公告)号：US07788728B2

    公开(公告)日：2010-08-31

    申请号：US11030560

    申请日：2005-01-07

    Applicant: Myung-sun Kim ,  Su-hyun Nam ,  Yong-jin Jang ,  Sun-nam Lee ,  Jae-heung Lee

    Inventor： Myung-sun Kim ,  Su-hyun Nam ,  Yong-jin Jang ,  Sun-nam Lee ,  Jae-heung Lee

    IPC: G06F21/24 ,  H04L9/08

    CPC classification number: G06F21/10

    Abstract: A method and apparatus are provided for simply and securely limiting a number of times that contents can be accessed using a hash chain. The apparatus limiting a number of times contents are accessed by a user terminal includes a hash chain generator receiving information indicating selected contents by the user terminal and information indicating how many times (n) the user terminal has authority to access the selected contents and generating a hash chain including n hash values derived from a seed value, and a contents access manager deleting the hash values one by one from the hash chain whenever the user terminal accesses the selected contents such that the number of times the contents can be accessed by the user terminal is decreased by the number of deleted hash values.

    Abstract translation: 提供了一种方法和装置，用于简单和安全地限制可以使用散列链访问内容的次数。 限制用户终端访问内容的装置包括：哈希链生成器，其接收由用户终端指示所选内容的信息，以及指示用户终端有权访问所选内容多少次的信息，以及生成 散列链，其包括从种子值导出的n个哈希值，以及内容访问管理器，每当用户终端访问所选择的内容时，从哈希链中逐个删除哈希值，使得用户可以访问内容的次数 终端减少了删除的哈希值的数量。

    Siloxane polymer compositions and methods of manufacturing a capacitor using the same
    10.
    发明授权
    Siloxane polymer compositions and methods of manufacturing a capacitor using the same 失效
    硅氧烷聚合物组合物及其制造方法

    公开(公告)号：US07736527B2

    公开(公告)日：2010-06-15

    申请号：US12008215

    申请日：2008-01-09

    Applicant: Kyoung-Mi Kim ,  Myung-Sun Kim ,  Young-Ho Kim

    Inventor： Kyoung-Mi Kim ,  Myung-Sun Kim ,  Young-Ho Kim

    IPC: H01G4/01 ,  C08G77/50 ,  B05D5/12

    CPC classification number: C08G77/20 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/32115 ,  H01L21/32139 ,  H01L28/91

    Abstract: Siloxane polymer compositions and methods of manufacturing a capacitor are described. In some embodiments, a mold layer pattern is formed on a substrate having a conductive structure, and the mold layer pattern has an opening to expose the conductive structure. A conductive layer is formed on the substrate. A buffer layer pattern is formed on the conductive layer formed in the opening. The buffer layer pattern includes a siloxane polymer represented by the following Chemical Formula 1. The conductive layer is selectively removed to form a lower electrode. The mold layer pattern and the buffer layer pattern are removed. A dielectric layer and an upper electrode are formed on the substrate to form a capacitor. The methods may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.

    Abstract translation: 描述硅氧烷聚合物组合物和制造电容器的方法。 在一些实施例中，在具有导电结构的基底上形成模具层图案，并且模具层图案具有露出导电结构的开口。 在基板上形成导电层。 在形成在开口中的导电层上形成缓冲层图案。 缓冲层图案包括由以下化学式1表示的硅氧烷聚合物。选择性地除去导电层以形成下电极。 去除模层图案和缓冲层图案。 在基板上形成电介质层和上电极，形成电容器。 这些方法可以简化电容器和半导体器件的制造工艺，并且可以提高它们的效率。

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