WIRELESS CHARGING SYSTEM FOR VEHICLE
    1.
    发明申请
    WIRELESS CHARGING SYSTEM FOR VEHICLE 审中-公开
    无线充气系统

    公开(公告)号:US20110187321A1

    公开(公告)日:2011-08-04

    申请号:US13063621

    申请日:2009-09-11

    申请人: Makoto Hirayama

    发明人: Makoto Hirayama

    IPC分类号: H01F38/14

    摘要: A control signal is superimposed on an AC power at the time of charging the battery of an electric car in a non-contact manner by electric power outputted from a feeding apparatus. A feeding apparatus 11 includes a carrier oscillator 21 for outputting an AC power, an ASK modulator 22 for superimposing a control signal on the AC power outputted from the carrier oscillator 21 according to the ASK modulation method, a power amplifier 23 for amplifying the AC power modulated by the ASK modulator 22, and a first resonance coil 24 for outputting the AC power amplified by the power amplifier 23. A charging apparatus 12 to be provided on an electric car includes a second resonance coil 31 for receiving the AC power transmitted from the first resonance coil 24, an ASK demodulator 34 for demodulating the received AC power to thereby extract the control signal, and a rectifier 33 which rectifiers the received AC power to obtain a DC power and supplies the DC power to a battery 35.

    摘要翻译: 在从馈电装置输出的电力以非接触方式对电动汽车的电池充电时,控制信号叠加在交流电上。 馈电装置11包括用于输出AC电力的载波振荡器21,用于根据ASK调制方法从载波振荡器21输出的AC电力叠加控制信号的ASK调制器22,用于放大AC电力的功率放大器23 由ASK调制器22调制的第一谐振线圈31和用于输出由功率放大器23放大的AC功率的第一谐振线圈24.设置在电动汽车上的充电装置12包括:第二谐振线圈31,用于接收从 第一谐振线圈24,用于解调所接收的AC电力从而提取控制信号的ASK解调器34;整流器33,其对接收到的AC电力进行整流以获得DC电力并将DC电力提供给电池35。

    Electronic component having improved low resistance contact and
manufacturing method therefor
    2.
    发明授权
    Electronic component having improved low resistance contact and manufacturing method therefor 失效
    具有改进的低电阻接触的电子部件及其制造方法

    公开(公告)号:US5023750A

    公开(公告)日:1991-06-11

    申请号:US482583

    申请日:1990-02-21

    申请人: Makoto Hirayama

    发明人: Makoto Hirayama

    摘要: A capacitor includes a lower electrode formed from a layer of silicon or polycrystalline silicon, a single or multi-layer dielectric film such as a nitride film, and an upper electrode formed on the dielectric film. The dielectric film is formed, after a surface layer of the lower electrode has been removed by etching, on a new surface of the lower electrode continuously in a non-oxidizing atmosphere. By this process, formation of an incidental oxide film between the dielectric film and the lower electrode can be prevented.In a direct contact region of the conductive layer, the surface of the contact region is also etched by dry chemical etching, and thereafter the conductive layer is formed in an oxygen-free atmosphere. By doing so, generation of an incidental oxide film having high resistance can be prevented, whereby the contact characteristic can be improved.

    摘要翻译: 电容器包括由硅或多晶硅层形成的下电极,诸如氮化物膜的单层或多层电介质膜和形成在电介质膜上的上电极。 在通过蚀刻除去下电极的表面层之后,在非氧化气氛中连续地在下电极的新表面上形成电介质膜。 通过该工序,能够防止在电介质膜与下部电极之间形成偶然的氧化膜。 在导电层的直接接触区域中,通过干式化学蚀刻也蚀刻接触区域的表面,之后在无氧气氛中形成导电层。 通过这样做,可以防止产生具有高电阻的偶然氧化膜,从而可以提高接触特性。

    Reaction furnace and method of operating the same
    3.
    发明授权
    Reaction furnace and method of operating the same 失效
    反应炉及其操作方法

    公开(公告)号:US4822756A

    公开(公告)日:1989-04-18

    申请号:US124430

    申请日:1987-11-18

    申请人: Makoto Hirayama

    发明人: Makoto Hirayama

    摘要: The present invention comprises a reaction furnace including a fixed capsule having an air atmosphere to be replaced with a predetermined atmosphere, with a semiconductor member to be treated placed therein. A movable capsule initially receives the member and has an atmosphere replaced with a predetermined one before the member to be treated is transferred to the fixed capsule. The movable capsule receives the member at a receiving location and is moved to a delivery location where it is connected to a loading chamber. A method of operating the reaction furnace is also disclosed.

    摘要翻译: 本发明包括一种反应炉,其包括具有待预定气氛替换的空气气氛的固定胶囊和待处理的半导体部件。 可移动的胶囊首先接收该构件并且在待处理的构件被转移到固定的胶囊之前具有被预定的气体置换的气氛。 可移动的胶囊在接收位置处接收该构件并移动到其被连接到装载室的传送位置。 还公开了操作反应炉的方法。

    Isoquinoline derivatives
    4.
    发明授权
    Isoquinoline derivatives 失效
    异喹啉衍生物

    公开(公告)号:US4782154A

    公开(公告)日:1988-11-01

    申请号:US75828

    申请日:1987-07-17

    CPC分类号: C07D401/04

    摘要: The isoquinoline derivatives represented by the following general formula (I) are useful as cardiotonics having high cardiotonic activity and low toxicity: ##STR1## where R.sub.1 represents a lower C.sub.1 -C.sub.4 alkyl group or cyclopropyl group,R.sub.2 represents formyl group, lower C.sub.1 -C.sub.4 alkanoyl group and benzoyl group, lower C.sub.1 -C.sub.4 alkyl group, lower C.sub.1 -C.sub.4 alkenyl group, lower C.sub.1 -C.sub.4 hydroxy substituted alkyl group, C.sub.1 -C.sub.4 perfluoroalkyl group andR.sub.3 represents 4-pyridyl group or 2-pyridyl group respectively,and the therapeutically acceptable salts thereof are also useful as cardiotonics.

    摘要翻译: 由以下通式(I)表示的异喹啉衍生物可用作具有高强度活性和低毒性的强心剂:其中R 1表示低级C 1 -C 4烷基或环丙基,R 2表示甲酰基,低级 C1-C4烷酰基和苯甲酰基,低级C1-C4烷基,低级C1-C4烯基,低级C1-C4羟基取代烷基,C1-C4全氟烷基,R3分别代表4-吡啶基或2-吡啶基 ,其治疗上可接受的盐也可用作强心剂。

    Apparatus for manufacturing semiconductor device
    7.
    发明授权
    Apparatus for manufacturing semiconductor device 失效
    半导体器件制造装置

    公开(公告)号:US4802842A

    公开(公告)日:1989-02-07

    申请号:US83020

    申请日:1987-08-04

    申请人: Makoto Hirayama

    发明人: Makoto Hirayama

    CPC分类号: H01L21/67303 C30B35/00

    摘要: In a heating furnace for forming films on semiconductor substrates (1), holding means (2, 4) for holding semiconductor substrates (1) are provided with projections (3, 5) for holding at least part of bottom faces of the semiconductor substrates (1) horizontally with predetermined spacing between the projections.

    摘要翻译: 在用于在半导体基板(1)上形成膜的加热炉中,用于保持半导体基板(1)的保持装置(2,4)设置有用于保持半导体基板的至少一部分底面的突起(3,5) 1)水平地在突起之间具有预定的间隔。

    METHOD FOR DISTINGUISHING BETWEEN SPECIES WITHIN THE GENUS STAPHILOCOCCUS
    8.
    发明申请
    METHOD FOR DISTINGUISHING BETWEEN SPECIES WITHIN THE GENUS STAPHILOCOCCUS 审中-公开
    用于在基因组中鉴定物种之间的方法

    公开(公告)号:US20140087395A1

    公开(公告)日:2014-03-27

    申请号:US14008923

    申请日:2012-03-22

    IPC分类号: G01N33/569 C07K14/405

    摘要: The object was to provide a method for distinguishing between species within the genus Staphylococcus; binding affinities between many types of lectins and bacteria belonging to the genus Staphylococcus were examined; and lectins of Tachylectin-2, LEL, KAA1, BCL11, CBA, HAA, HPA, STL, proBCA1, proBCA2, ULL, DSA, PWM, UDA, WFL, hypninA3, BCL11d, CFA1, CFA2, CLA, MPA1, MPA2, AC-avranin, algCSA, BML11b, BML11c, etc. were selected. Further, it was found that these lectins could be used to distinguish between species within the genus Staphylococcus.

    摘要翻译: 目的是提供一种区分葡萄球菌属物种的方法; 检查了许多类型的凝集素和属于葡萄球菌属的细菌之间的结合亲和力; 以及Tachylectin-2,LEL,KAA1,BCL11,CBA,HAA,HPA,STL,proBCA1,proBCA2,ULL,DSA,PWM,UDA,WFL,hypninA3,BCL11d,CFA1,CFA2,CLA,MPA1,MPA2,AC -avranin,algCSA,BML11b,BML11c等。 此外,发现这些凝集素可用于区分葡萄球菌属内的物种。

    Semiconductor processing method for processing substrate to be processed and its apparatus
    9.
    发明申请
    Semiconductor processing method for processing substrate to be processed and its apparatus 审中-公开
    用于处理待处理衬底的半导体加工方法及其装置

    公开(公告)号:US20050272271A1

    公开(公告)日:2005-12-08

    申请号:US10523974

    申请日:2004-02-04

    CPC分类号: C23C16/44

    摘要: A method for processing a target substrate (10) in a semiconductor processing apparatus (1) controls temperature of a first substrate (10) at a process temperature inside a process container (2), while supplying a process gas into the process container, thereby subjecting the first substrate to a semiconductor process, during which a by-product film is formed inside the process container. After the semiconductor process and unload of the first substrate (10) out of the process container (2), a reforming gas is supplied into the process container, thereby subjecting the by-product film to a reformation process, which is set to reduce thermal reflectivity of the by-product film. After the reformation process, temperature of a second substrate (10) is controlled at the process temperature inside the process container (2), while supplying the process gas into the process container, thereby subjecting the second substrate to the semiconductor process.

    摘要翻译: 在半导体处理装置(1)中处理目标衬底(10)的方法在处理容器(2)内的处理温度下控制第一衬底(10)的温度,同时将处理气体供应到处理容器中,从而 使第一基板经受半导体工艺,在该过程中,在处理容器内部形成副产物膜。 在半导体处理和将第一基板(10)从工艺容器(2)中卸载之后,将重整气体供给到处理容器中,从而使副产物膜进行重整过程,该过程设定为减少热 副产品薄膜的反射率。 在改造过程之后,在处理容器(2)内的处理温度下控制第二基板(10)的温度,同时将处理气体供应到处理容器中,从而使第二基板进行半导体处理。