摘要:
A control signal is superimposed on an AC power at the time of charging the battery of an electric car in a non-contact manner by electric power outputted from a feeding apparatus. A feeding apparatus 11 includes a carrier oscillator 21 for outputting an AC power, an ASK modulator 22 for superimposing a control signal on the AC power outputted from the carrier oscillator 21 according to the ASK modulation method, a power amplifier 23 for amplifying the AC power modulated by the ASK modulator 22, and a first resonance coil 24 for outputting the AC power amplified by the power amplifier 23. A charging apparatus 12 to be provided on an electric car includes a second resonance coil 31 for receiving the AC power transmitted from the first resonance coil 24, an ASK demodulator 34 for demodulating the received AC power to thereby extract the control signal, and a rectifier 33 which rectifiers the received AC power to obtain a DC power and supplies the DC power to a battery 35.
摘要:
A capacitor includes a lower electrode formed from a layer of silicon or polycrystalline silicon, a single or multi-layer dielectric film such as a nitride film, and an upper electrode formed on the dielectric film. The dielectric film is formed, after a surface layer of the lower electrode has been removed by etching, on a new surface of the lower electrode continuously in a non-oxidizing atmosphere. By this process, formation of an incidental oxide film between the dielectric film and the lower electrode can be prevented.In a direct contact region of the conductive layer, the surface of the contact region is also etched by dry chemical etching, and thereafter the conductive layer is formed in an oxygen-free atmosphere. By doing so, generation of an incidental oxide film having high resistance can be prevented, whereby the contact characteristic can be improved.
摘要:
The present invention comprises a reaction furnace including a fixed capsule having an air atmosphere to be replaced with a predetermined atmosphere, with a semiconductor member to be treated placed therein. A movable capsule initially receives the member and has an atmosphere replaced with a predetermined one before the member to be treated is transferred to the fixed capsule. The movable capsule receives the member at a receiving location and is moved to a delivery location where it is connected to a loading chamber. A method of operating the reaction furnace is also disclosed.
摘要:
The isoquinoline derivatives represented by the following general formula (I) are useful as cardiotonics having high cardiotonic activity and low toxicity: ##STR1## where R.sub.1 represents a lower C.sub.1 -C.sub.4 alkyl group or cyclopropyl group,R.sub.2 represents formyl group, lower C.sub.1 -C.sub.4 alkanoyl group and benzoyl group, lower C.sub.1 -C.sub.4 alkyl group, lower C.sub.1 -C.sub.4 alkenyl group, lower C.sub.1 -C.sub.4 hydroxy substituted alkyl group, C.sub.1 -C.sub.4 perfluoroalkyl group andR.sub.3 represents 4-pyridyl group or 2-pyridyl group respectively,and the therapeutically acceptable salts thereof are also useful as cardiotonics.
摘要:
In executing a setup procedure of a call from a VoIP gateway on the originating side to a media gateway on the destination side via a gate keeper, an authentication key is transmitted from the gate keeper to the VoIP gateway and the media gateway. The VoIP gateway on the originating side transmits to the media gateway on the destination side an admissions confirm (ACF) after attaching the authentication key. Then, the media gateway collates the authentication key obtained from the originator VoIP gateway with the authentication key obtained from the gate keeper and continues the call setup procedure only when the two authentication keys coincide with each other. On the other hand, in case of non-coincidence, the gate keeper carries out a call release. Through this, an illegal connection call not routing through the gate keeper is excluded without fail.
摘要:
An isoquinoline derivative of the following formula: ##STR1## wherein R.sub.1 is a methyl or a methoxymethyl group and R.sub.2 and R.sub.3 are each a hydrogen atom or a methyl, ethyl, methoxy, a cyclohexyl, a phenyl, a 3,4-dimethoxyphenyl, a pyridyl or an oxo (.dbd.O) group;and therapeutically acceptable salts thereof which exhibit a low toxicity and a wide range of safety and are highly useful as a cardiotonic medication.
摘要:
In a heating furnace for forming films on semiconductor substrates (1), holding means (2, 4) for holding semiconductor substrates (1) are provided with projections (3, 5) for holding at least part of bottom faces of the semiconductor substrates (1) horizontally with predetermined spacing between the projections.
摘要:
The object was to provide a method for distinguishing between species within the genus Staphylococcus; binding affinities between many types of lectins and bacteria belonging to the genus Staphylococcus were examined; and lectins of Tachylectin-2, LEL, KAA1, BCL11, CBA, HAA, HPA, STL, proBCA1, proBCA2, ULL, DSA, PWM, UDA, WFL, hypninA3, BCL11d, CFA1, CFA2, CLA, MPA1, MPA2, AC-avranin, algCSA, BML11b, BML11c, etc. were selected. Further, it was found that these lectins could be used to distinguish between species within the genus Staphylococcus.
摘要:
A method for processing a target substrate (10) in a semiconductor processing apparatus (1) controls temperature of a first substrate (10) at a process temperature inside a process container (2), while supplying a process gas into the process container, thereby subjecting the first substrate to a semiconductor process, during which a by-product film is formed inside the process container. After the semiconductor process and unload of the first substrate (10) out of the process container (2), a reforming gas is supplied into the process container, thereby subjecting the by-product film to a reformation process, which is set to reduce thermal reflectivity of the by-product film. After the reformation process, temperature of a second substrate (10) is controlled at the process temperature inside the process container (2), while supplying the process gas into the process container, thereby subjecting the second substrate to the semiconductor process.
摘要:
A method for forming a thin film on a semiconductor substrate wherein the substrate is transferred between an auxiliary chamber having an inert atmosphere to a reaction chamber having a reactive atmosphere, and wherein the inert and the reactive atmospheres exist concurrently during transfer.