公开(公告)号：US09305750B2

公开(公告)日：2016-04-05

申请号：US12728112

申请日：2010-03-19

申请人： Maolin Long ,  Seyed Jafar Jafarian-Tehrani

发明人： Maolin Long ,  Seyed Jafar Jafarian-Tehrani

IPC分类号： C23C16/00 ,  H01L21/306 ,  H01J37/32 ,  H05H1/46

CPC分类号： H01J37/32174 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32137 ,  H01J37/32183 ,  H05H1/46 ,  H05H2001/4652 ,  H05H2001/4667

摘要： A plasma processing system for generating plasma to process at least a wafer. The plasma processing system may include a first coil for conducting a first current for sustaining at least a first portion of the plasma. The plasma processing system may also include a second coil for conducting a second current for sustaining at least a second portion of the plasma. The plasma processing system may also include a power source for powering the first current and the second current. The plasma processing system may also include a parallel circuit for adjusting one of the amperage of the first current and the amperage of the second current. The parallel circuit may be electrically coupled between the power source and at least one of the first coil and the second coil. The parallel circuit may include an inductor and a variable capacitor electrically connected in parallel to each other.

摘要翻译： 一种用于产生等离子体以处理至少晶片的等离子体处理系统。 等离子体处理系统可以包括用于传导第一电流以维持等离子体的至少第一部分的第一线圈。 等离子体处理系统还可以包括用于传导第二电流以维持等离子体的至少第二部分的第二线圈。 等离子体处理系统还可以包括用于为第一电流和第二电流供电的电源。 等离子体处理系统还可以包括并联电路，用于调节第一电流的电流强度和第二电流的电流强度之一。 并联电路可以电耦合在电源和第一线圈和第二线圈中的至少一个之间。 并联电路可以包括彼此并联电连接的电感器和可变电容器。

公开(公告)号：US20130135058A1

公开(公告)日：2013-05-30

申请号：US13751001

申请日：2013-01-25

申请人： Maolin Long ,  Ricky Marsh ,  Alex Paterson

发明人： Maolin Long ,  Ricky Marsh ,  Alex Paterson

IPC分类号： H03H7/38

CPC分类号： H03H7/38 ,  H03H7/40

摘要： A match circuit includes the following: a power input circuit coupled to an RF source; an inner coil input circuit coupled between the power input circuit and an input terminal of an inner coil, the inner coil input circuit including an inductor and a capacitor coupled in series to the inductor, the inductor connecting to the power input circuit, and the capacitor connecting to the input terminal of the inner coil, a first node being defined between the power input circuit and the inner coil input circuit; an inner coil output circuit coupled between an output terminal of the inner coil and ground, the inner coil output circuit defining a direct pass-through connection to ground; an outer coil input circuit coupled between the first node and an input terminal of an outer coil; and an outer coil output circuit coupled between an output terminal of the outer coil and ground.

公开(公告)号：US07776156B2

公开(公告)日：2010-08-17

申请号：US11055191

申请日：2005-02-10

申请人： Maolin Long ,  David P. Sun

发明人： Maolin Long ,  David P. Sun

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： C23C16/507 ,  C23C16/46 ,  H01J37/321 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/67109

摘要： A RF plasma generation and temperature control system for an inductively coupled plasma process chamber. The plasma generation system includes a heater that includes an elongated upper heating element substantially parallel to an elongated lower heating element, where the upper and lower heating elements are joined by one or more posts substantially perpendicular to the upper and lower heating elements. The system also including one or more RF coils featuring a crease at points of overlap with the posts. Also, a RF plasma generation system for an inductively coupled plasma process chamber, where the plasma generation system includes a heater thermally coupled to the chamber, and one or more RF coils coupled to the chamber, where the RF coils include a hollow tube having at least one flat side.

摘要翻译： 用于感应耦合等离子体处理室的RF等离子体产生和温度控制系统。 等离子体产生系统包括加热器，其包括基本上平行于细长的下部加热元件的细长的上部加热元件，其中上部加热元件和下部加热元件由基本上垂直于上部和下部加热元件的一个或多个支柱连接。 该系统还包括一个或多个RF线圈，其具有在与柱重叠的点处的折痕。 此外，用于感应耦合等离子体处理室的RF等离子体产生系统，其中等离子体发生系统包括热耦合到腔室的加热器和耦合到腔室的一个或多个RF线圈，其中RF线圈包括中空管， 最少一个平面。

公开(公告)号：US07531061B2

公开(公告)日：2009-05-12

申请号：US10940019

申请日：2004-09-14

申请人： Maolin Long

发明人： Maolin Long

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23F1/00 ,  F25B29/00

CPC分类号： H01J37/3244 ,  C23C16/452

摘要： A method and system for controlling the temperatures of at least one gas in a plasma processing environment prior to the at least one gas entering a process chamber. This temperature control may vary at different spatial regions of a showerhead assembly (either an individual gas species or mixed gas species). According to one embodiment, an in-line heat exchanger alters (i.e., increases or decreases) the temperature of passing gas species (either high- or low-density) prior to entering a process chamber, temperature change of the gases is measured by determining a temperature of the gas both upon entrance into the in-line heat exchanger assembly and upon exit.

摘要翻译： 一种用于在所述至少一种气体进入处理室之前控制等离子体处理环境中的至少一种气体的温度的方法和系统。 该温度控制可以在喷头组件（单独的气体种类或混合气体种类）的不同空间区域中变化。 根据一个实施例，直列式热交换器在进入处理室之前改变（即，增加或减少）通过的气体种类（高或低密度）的温度，气体的温度变化通过确定 气体在进入直列热交换器组件时和出口时的温度。

公开(公告)号：US09336996B2

公开(公告)日：2016-05-10

申请号：US13034332

申请日：2011-02-24

申请人： Maolin Long ,  Alex Paterson

发明人： Maolin Long ,  Alex Paterson

IPC分类号： H01L21/306 ,  C23C16/00 ,  H01J37/32 ,  H05H1/46

CPC分类号： H01J37/3211 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32165 ,  H01J37/32431 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32513 ,  H01J37/32651 ,  H01J37/32715 ,  H01J2237/332 ,  H01J2237/334 ,  H05H1/46 ,  H05H2001/4652 ,  H05H2001/4667

摘要： A plasma processing system for generating plasma to process a wafer. The plasma processing system includes a set of top coils for initiating the plasma, a set of side coils for affecting distribution of the plasma, and a chamber structure for containing the plasma. The chamber structure includes a chamber wall and a dielectric member. The dielectric member includes a top, a vertical wall, and a flange. The top is connected through the vertical wall to the flange, and is connected through the vertical wall and the flange to the chamber wall. The set of top coils is disposed above the top. The set of side coils surrounds the vertical wall. A vertical inner surface of the vertical wall is configured to be exposed to the plasma. The inner diameter of the vertical wall is smaller than the inner diameter of the chamber wall.

摘要翻译： 一种用于产生等离子体以处理晶片的等离子体处理系统。 等离子体处理系统包括一组用于启动等离子体的顶部线圈，用于影响等离子体分布的一组侧线圈，以及用于容纳等离子体的室结构。 室结构包括室壁和电介质构件。 电介质构件包括顶部，垂直壁和凸缘。 顶部通过垂直壁连接到法兰上，并通过垂直壁和法兰连接到室壁。 顶部线圈组设置在顶部上方。 侧面线圈组围绕垂直壁。 垂直壁的垂直内表面被配置为暴露于等离子体。 垂直壁的内径小于室壁的内径。

公开(公告)号：US08742666B2

公开(公告)日：2014-06-03

申请号：US12960706

申请日：2010-12-06

申请人： Maolin Long ,  Ralph Lu ,  Fred Egley ,  Thomas Anderson ,  Seyed Jafar Jafarian-Tehrani ,  Michael Giarratano

发明人： Maolin Long ,  Ralph Lu ,  Fred Egley ,  Thomas Anderson ,  Seyed Jafar Jafarian-Tehrani ,  Michael Giarratano

IPC分类号： H05H1/46 ,  H03H1/00 ,  H03H7/01

CPC分类号： H05H1/46 ,  H01J37/32174 ,  H03H1/0007 ,  H03H7/01 ,  H03H7/38

摘要： A filter for filtering radio frequency (RF) power transmitted from an electrostatic chuck (ESC) in a plasma processing system. The plasma processing system may include a heating element disposed at the ESC. The plasma processing system may further include a power supply. The filter may include a core member and a cable wound around and wound along the core member to form a set of inductors. The cable may include a plurality of wires, including a first wire and a second wire, a portion of the first wire and a portion of the second wire being twisted together, a first end of the first wire and a first end of the second wire being connected to the heating element, each of a second end of the first wire and a second end of the second wire being connected to a capacitor and being connected to the power supply.

摘要翻译： 一种用于过滤在等离子体处理系统中从静电卡盘（ESC）传送的射频（RF）功率的滤波器。 等离子体处理系统可以包括设置在ESC处的加热元件。 等离子体处理系统还可以包括电源。 过滤器可以包括芯部件和缠绕在芯部件上并缠绕的电缆，以形成一组电感器。 电缆可以包括多根线，包括第一线和第二线，第一线的一部分和第二线的一部分被扭绞在一起，第一线的第一端和第二线的第一端 连接到加热元件，第一线的第二端和第二线的第二端中的每一个连接到电容器并连接到电源。

公开(公告)号：US20120273130A1

公开(公告)日：2012-11-01

申请号：US13198683

申请日：2011-08-04

申请人： John Drewery ,  Maolin Long ,  Alex Paterson

发明人： John Drewery ,  Maolin Long ,  Alex Paterson

IPC分类号： H01L21/3065 ,  H05K9/00

CPC分类号： H01J37/32651 ,  H01J37/321 ,  H01J37/32633

摘要： Plasma processing chambers having internal Faraday shields with defined groove configurations, are defined. In one example, the chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber, where the dielectric window disposed over the electrostatic chuck. Also included is a Faraday shield disposed inside of the chamber and defined between the electrostatic chuck and the dielectric window. The Faraday shield includes an inner zone having an inner radius range, a middle zone having a middle radius range, an outer zone having an outer radius range, where the inner zone is adjacent to the middle zone, and the middle zone being adjacent to the outer zone. Further defining the Faraday shield is a first set of radial slots (A) extending through the inner zone, the middle zone, and the outer zone, a second set of radial slots (C) extending through only the outer zone; and a third set of radial slots (B) extending through the middle zone and outer zone. In this configuration, the first, second and third radial slots are arranged radially around the Faraday shield in a repeating pattern of slots A, C, B, and C.

摘要翻译： 定义了具有限定凹槽结构的具有内部法拉第屏蔽的等离子体处理室。 在一个示例中，腔室包括用于接收衬底的静电吸盘和连接到室的顶部的介电窗口，其中介电窗设置在静电吸盘上方。 还包括设置在室内部并限定在静电卡盘和电介质窗口之间的法拉第屏蔽。 法拉第屏蔽包括具有内半径范围的内区域，具有中间半径范围的中间区域，具有外半径范围的外区域，其中内区域与中间区域相邻，中间区域邻近 外部区域 进一步限定法拉第屏蔽是延伸穿过内部区域，中间区域和外部区域的第一组径向狭槽（A），仅延伸穿过外部区域的第二组径向狭槽（C）; 以及延伸穿过中间区域和外部区域的第三组径向狭槽（B）。 在这种构造中，第一，第二和第三径向狭缝围绕法拉第屏蔽件以狭槽A，C，B和C的重复图案径向布置。

公开(公告)号：US20120217222A1

公开(公告)日：2012-08-30

申请号：US13034332

申请日：2011-02-24

申请人： Maolin Long ,  Alex Paterson

发明人： Maolin Long ,  Alex Paterson

IPC分类号： C23F1/08 ,  C23F1/00 ,  C23C16/52 ,  C23C16/458 ,  C23C16/50

CPC分类号： H01J37/3211 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32165 ,  H01J37/32431 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32513 ,  H01J37/32651 ,  H01J37/32715 ,  H01J2237/332 ,  H01J2237/334 ,  H05H1/46 ,  H05H2001/4652 ,  H05H2001/4667

摘要： A plasma processing system for generating plasma to process a wafer. The plasma processing system includes a set of top coils for initiating the plasma, a set of side coils for affecting distribution of the plasma, and a chamber structure for containing the plasma. The chamber structure includes a chamber wall and a dielectric member. The dielectric member includes a top, a vertical wall, and a flange. The top is connected through the vertical wall to the flange, and is connected through the vertical wall and the flange to the chamber wall. The set of top coils is disposed above the top. The set of side coils surrounds the vertical wall. A vertical inner surface of the vertical wall is configured to be exposed to the plasma. The inner diameter of the vertical wall is smaller than the inner diameter of the chamber wall.

摘要翻译： 一种用于产生等离子体以处理晶片的等离子体处理系统。 等离子体处理系统包括一组用于启动等离子体的顶部线圈，用于影响等离子体分布的一组侧线圈，以及用于容纳等离子体的室结构。 室结构包括室壁和电介质构件。 电介质构件包括顶部，垂直壁和凸缘。 顶部通过垂直壁连接到法兰上，并通过垂直壁和法兰连接到室壁。 顶部线圈组设置在顶部上方。 侧面线圈组围绕垂直壁。 垂直壁的垂直内表面被配置为暴露于等离子体。 垂直壁的内径小于室壁的内径。

公开(公告)号：US20060075967A1

公开(公告)日：2006-04-13

申请号：US10963030

申请日：2004-10-12

申请人： Siqing Lu ,  Canfeng Lai ,  Qiwei Liang ,  Maolin Long ,  Irene Chou ,  Jason Bloking ,  Steven Kim ,  Ellie Yieh

发明人： Siqing Lu ,  Canfeng Lai ,  Qiwei Liang ,  Maolin Long ,  Irene Chou ,  Jason Bloking ,  Steven Kim ,  Ellie Yieh

IPC分类号： H01L21/20 ,  C23C16/00

CPC分类号： H01J37/321 ,  C23C16/045 ,  C23C16/401 ,  C23C16/507 ,  H05B6/26

摘要： A substrate processing system is provided with a housing defining a process chamber. A substrate holder is disposed within the process chamber and configured to support a substrate during substrate processing. A gas delivery system is configured to introduce a gas into the process chamber. A pressure-control system is provided for maintaining a selected pressure within the process chamber. A high-density-plasma generating system is operatively coupled with the process chamber and includes a coil for inductively coupling energy into a plasma formed within the process chamber. It also includes magneto-dielectric material proximate the coil for concentrating a magnetic field generated by the coil. A controller is also provided for controlling the gas-delivery system, the pressure-control system, and the high-density-plasma generating system.

摘要翻译： 衬底处理系统设置有限定处理室的壳体。 衬底保持器设置在处理室内并且构造成在衬底处理期间支撑衬底。 气体输送系统构造成将气体引入处理室。 提供压力控制系统以保持处理室内的选定压力。 高密度等离子体发生系统与处理室可操作地耦合，并且包括用于将能量感应耦合到处理室内形成的等离子体中的线圈。 它还包括靠近线圈的磁电介质材料，用于集中由线圈产生的磁场。 还提供用于控制气体输送系统，压力控制系统和高密度等离子体产生系统的控制器。

公开(公告)号：US06916401B2

公开(公告)日：2005-07-12

申请号：US10339597

申请日：2003-01-10

申请人： Maolin Long

发明人： Maolin Long

IPC分类号： H01J37/32 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32009 ,  H01J37/32532 ,  H01J37/32568 ,  H01J37/32623

摘要： A segmented electrode apparatus for use in plasma processing in a plasma chamber or as part of a plasma processing system. The apparatus is composed of a plurality of electrode segments each having an upper surface, a lower surface and a periphery. The lower surfaces of the electrode segments define an electrode segment plane. Further included in the electrode is a plurality of displaceable insulating ring assemblies with a conductive shielding layer in each of them. Each assembly has an insulating body with an upper and lower portion and surrounds a corresponding one of the electrode segments at the electrode segment periphery. Each insulating ring assembly is arranged adjacent another insulating ring assembly and is displaceable with respect thereto and to the corresponding electrode segment. Also included in the electrode apparatus is a plurality of displacement actuators connected to the chamber and to the plurality of insulating ring assemblies at the insulating body upper portions. The displacement actuators are used to displace at least one of the insulating ring assemblies relative to the corresponding one of the electrode segments so as to cause the lower portion of at least one insulating body to move in a direction perpendicular to the electrode segment plane.

摘要翻译： 用于等离子体室中的等离子体处理或等离子体处理系统的一部分的分段电极装置。 该装置由多个电极段组成，每个电极段具有上表面，下表面和周边。 电极段的下表面限定电极段平面。 还包括在电极中的是多个位移绝缘环组件，其中每个具有导电屏蔽层。 每个组件具有绝缘体，其具有上部和下部，并且在电极段周边处围绕相应的一个电极段。 每个绝缘环组件被布置在另一个绝缘环组件附近并且可相对于其移动并且相应于电极段。 还包括在电极装置中的是多个位移致动器，其连接到室和在绝缘体上部处的多个绝缘环组件。 位移致动器用于相对于相应的一个电极段移动绝缘环组件中的至少一个，以使至少一个绝缘体的下部在垂直于电极段平面的方向上移动。