公开(公告)号：US09469079B2

公开(公告)日：2016-10-18

申请号：US13806917

申请日：2011-08-30

申请人： Haruhito Ohtsuka ,  Masanobu Hayashi

发明人： Haruhito Ohtsuka ,  Masanobu Hayashi

IPC分类号： B32B3/02 ,  B29C45/14 ,  B60Q3/02 ,  B29L31/30

CPC分类号： B32B3/02 ,  B29C45/14467 ,  B29C2045/14532 ,  B29C2045/14901 ,  B29K2995/0025 ,  B29K2995/0026 ,  B29L2031/3005 ,  B60Q3/51 ,  Y10T428/24752

摘要： A cover member of an illuminating unit is formed of a film insert molded product, in which a film is disposed on a decorative face. The film is arranged so an end part of the film is positioned in front of an end part of the decorative face, whereby a film end protecting area formed of an exposed part of a molded resin layer is provided between the end part of the decorative face and the end part of the film, and a surface of the film end protecting area is made flush with the surface of the film. A corner between the end part of the decorative face and an end face of the molded resin layer is set to be an acute angle, and the end face of the molded resin layer functions as a contact face with respect to a ceiling trim.

摘要翻译： 照明单元的盖构件由膜嵌入成型品形成，其中膜设置在装饰面上。 该膜被布置成使得膜的端部位于装饰面的端部的前方，由此在装饰面的端部之间设置由模制树脂层的暴露部分形成的膜端部保护区域 和膜的端部，并且使膜端部保护区域的表面与膜的表面齐平。 将装饰面的端部与模制树脂层的端面之间的角部设定为锐角，成型树脂层的端面作为相对于天花板饰板的接触面起作用。

公开(公告)号：US20120156893A1

公开(公告)日：2012-06-21

申请号：US13391923

申请日：2010-09-02

申请人： Yuki Ozaki ,  Masanobu Hayashi

发明人： Yuki Ozaki ,  Masanobu Hayashi

IPC分类号： H01L21/312 ,  C09D7/12

CPC分类号： C23C18/1208 ,  C04B35/14 ,  C04B35/62218 ,  C04B2235/483 ,  C08G77/62 ,  C09D183/16 ,  C23C18/122 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02326

摘要： The present invention provides a method for forming a siliceous film. According to the method, a siliceous film having a hydrophilic surface can be formed from a polysilazane compound at a low temperature. In the method, a composition containing a polysilazane compound and a silica-conversion reaction accelerator is applied on a substrate surface to form a polysilazane film, and then a polysilazane film-treatment solution is applied thereon so that the polysilazane compound can be converted into a siliceous film at 300° C. or less. The polysilazane film-treatment solution contains a solvent, hydrogen peroxide and an alcohol.

摘要翻译： 本发明提供一种形成硅质膜的方法。 根据该方法，可以从聚硅氮烷化合物在低温下形成具有亲水性表面的硅质膜。 在该方法中，将含有聚硅氮烷化合物和二氧化硅转化反应促进剂的组合物涂布在基材表面上以形成聚硅氮烷膜，然后在其上涂布聚硅氮烷膜处理溶液，使得聚硅氮烷化合物可以转化为 300℃以下的硅质膜。 聚硅氮烷膜处理溶液含有溶剂，过氧化氢和醇。

公开(公告)号：US20090305063A1

公开(公告)日：2009-12-10

申请号：US12375568

申请日：2007-09-05

申请人： Masanobu Hayashi

发明人： Masanobu Hayashi

IPC分类号： C08L83/06 ,  B05D3/04 ,  B05D3/02 ,  B32B9/04

CPC分类号： C09D183/16 ,  C08G77/62 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/3125 ,  H01L21/31662 ,  H01L21/3185 ,  Y10T428/31663

摘要： The present invention provides a siliceous film-forming composition having such a small thickness shrinkage ratio that a highly homogeneous siliceous film can be obtained. The invention also provides a trench isolation structure-fabrication process. According to this process, trenches even having very small widths can be homogeneously filled in. The composition contains a solvent and a polysilazane compound obtained by co-ammonolysis of one or a combination of two or more halosilane compounds. The process comprises the steps of coating a surface of a silicon substrate with the above composition, and subjecting the coated substrate to heat-treatment at less than 1000° C. under an oxygen atmosphere or an oxidizing atmosphere containing water vapor, so that the composition is converted into silicon dioxide in the form of a film.

摘要翻译： 本发明提供一种具有如此小的收缩率的硅质成膜组合物，可获得高均匀的硅质膜。 本发明还提供了一种沟槽隔离结构制造工艺。 根据该方法，即使具有非常小的宽度的沟槽也可以均匀地填充。组合物含有溶剂和通过两种或更多种卤代硅烷化合物的一种或两种以上的组合进行共解氨化而得到的聚硅氮烷化合物。 该方法包括以下步骤：用上述组合物涂覆硅衬底的表面，并在氧气氛或含有水蒸气的氧化气氛下，在低于1000℃下对涂覆的衬底进行热处理，使得组合物 被转化为膜形式的二氧化硅。

公开(公告)号：US09896764B2

公开(公告)日：2018-02-20

申请号：US13391923

申请日：2010-09-02

申请人： Yuki Ozaki ,  Masanobu Hayashi

发明人： Yuki Ozaki ,  Masanobu Hayashi

IPC分类号： H01L21/31 ,  H01L21/469 ,  C23C18/12 ,  H01L21/02

CPC分类号： C23C18/1208 ,  C04B35/14 ,  C04B35/62218 ,  C04B2235/483 ,  C08G77/62 ,  C09D183/16 ,  C23C18/122 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02326

摘要： The present invention provides a method for forming a siliceous film. According to the method, a siliceous film having a hydrophilic surface can be formed from a polysilazane compound at a low temperature. In the method, a composition containing a polysilazane compound and a silica-conversion reaction accelerator is applied on a substrate surface to form a polysilazane film, and then a polysilazane film-treatment solution is applied thereon so that the polysilazane compound can be converted into a siliceous film at 300° C. or less. The polysilazane film-treatment solution contains a solvent, hydrogen peroxide and an alcohol.

公开(公告)号：US20100323168A1

公开(公告)日：2010-12-23

申请号：US12918069

申请日：2009-02-27

申请人： Tatsuro Nagahara ,  Masanobu Hayashi

发明人： Tatsuro Nagahara ,  Masanobu Hayashi

IPC分类号： B32B3/10 ,  B05D1/36

CPC分类号： H01L21/3125 ,  C08G77/62 ,  C09D183/16 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/316 ,  H01L21/76224 ,  Y10T428/24612

摘要： The present invention provides a method for formation of a siliceous film containing nitrogen in a low concentration. The method according to the present invention comprises the steps of: applying a polysilazane composition on an engraved substrate surface, to form a coating layer; hardening the coating layer only in the part adjacent to the substrate surface, to form a covering film along the shape of the engraved substrate; and removing the polysilazane composition of the coating layer in the part not hardened in the above covering film-formation step. According to this method, two or more siliceous films can be formed and layered.

摘要翻译： 本发明提供一种形成含有低浓度氮的硅质膜的方法。 根据本发明的方法包括以下步骤：在雕刻的基材表面上施加聚硅氮烷组合物以形成涂层; 仅在与基板表面相邻的部分中硬化涂层，以沿着雕刻的基板的形状形成覆盖膜; 并且在上述覆盖膜形成步骤中未硬化的部分中除去涂层的聚硅氮烷组合物。 根据该方法，可以形成并层叠两层以上的硅质膜。

公开(公告)号：US5969952A

公开(公告)日：1999-10-19

申请号：US169941

申请日：1998-10-13

申请人： Masanobu Hayashi ,  Masao Yonezawa

发明人： Masanobu Hayashi ,  Masao Yonezawa

IPC分类号： H05K1/14 ,  H05K3/34 ,  H05K3/36

CPC分类号： H05K3/368 ,  H01R12/52 ,  H05K3/3426 ,  H01R12/57 ,  H05K1/141 ,  H05K2201/1031 ,  Y02P70/611 ,  Y02P70/613

摘要： In order to provide an improved hybrid IC having a high density, compact in size, capable of being manufactured with a reduced cost, a hybrid IC of the present invention, comprises: a circuit board 2 having formed on the surface thereof a plurality of electrode patterns, and mounting on the same surface a plurality of electronic elements 3; a plurality of connection terminals 4 each formed into a generally rectangular frame structure including mutually facing first and second lateral plates, and mutually facing first and second longitudinal plates. In particular, one of the first and second lateral plates of each connection terminal 4 is fixedly connected to a connection electrode 2a on the circuit board 2. With the use of such structure, it is allowed to dispense with a process of solely connecting the connection terminals, thereby reducing the time and hence the cost for manufacturing a hybrid IC. Further, it is allowed to connect only necessary connection terminals in optionally selected positions, thus avoiding additional cost which is unavoidable in a prior art. Moreover, it is possible to increase the freedom in the designing of a hybrid IC, rendering it possible to produce a hybrid IC which is compact in size, light in weight, and has a high density.

摘要翻译： 为了提供一种具有高密度，小型化，能够以降低成本制造的改进的混合IC，本发明的混合IC包括：电路板2，其表面上形成有多个电极 图案，并且在同一表面上安装多个电子元件3; 多个连接端子4各自形成为包括相互面对的第一和第二侧板以及相互面对的第一和第二纵向板的大致矩形框架结构。 特别地，每个连接端子4的第一和第二侧板中的一个固定地连接到电路板2上的连接电极2a。通过使用这种结构，允许不采用单独连接连接 从而减少制造混合IC的时间并因此减少成本。 此外，允许在任选选择的位置仅连接必要的连接端子，从而避免了在现有技术中不可避免的额外成本。 此外，可以增加混合IC的设计的自由度，使得可以制造尺寸紧凑，重量轻并且具有高密度的混合IC。

公开(公告)号：US20130316515A1

公开(公告)日：2013-11-28

申请号：US13982359

申请日：2012-02-16

申请人： Tatsuro Nagahara ,  Masanobu Hayashi ,  Katsuchika Suzuki

发明人： Tatsuro Nagahara ,  Masanobu Hayashi ,  Katsuchika Suzuki

IPC分类号： H01L21/02 ,  H01L21/762

CPC分类号： H01L21/0223 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02326 ,  H01L21/76224 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： [Problem] To provide a method capable of forming an insulating film suffering less from both shrinkage and stress.[Means for solving] A method for forming a silicon dioxide film, comprising the steps of: coating a substrate with a polysilazane composition to form a coat, and then heating the formed coat in a hydrogen peroxide atmosphere at 50 to 200° C. This method enables to form isolation structures such as various insulating films.

摘要翻译： 提供一种能够形成收缩和应力较小的绝缘膜的方法。 [解决方法]一种形成二氧化硅膜的方法，包括以下步骤：用聚硅氮烷组合物涂覆基材以形成涂层，然后在50-200℃的过氧化氢气氛中加热所形成的涂层。 方法能够形成诸如各种绝缘膜的隔离结构。

公开(公告)号：US20130277808A1

公开(公告)日：2013-10-24

申请号：US13920617

申请日：2013-06-18

申请人： Masanobu HAYASHI

发明人： Masanobu HAYASHI

IPC分类号： H01L21/02

CPC分类号： H01L21/02282 ,  C03C1/008 ,  C03C2203/20 ,  C08G77/62 ,  C09D183/16 ,  C23C18/1212 ,  C23C18/122

摘要： This invention relates to a dipping solution used in a process for producing a siliceous film. The present invention provides a dipping solution and a siliceous film-production process employing the solution. The dipping solution enables to form a homogeneous siliceous film even in concave portions of a substrate having concave portions and convex portions. The substrate is coated with a polysilazane composition, and then dipped in the solution before fire. The dipping solution comprises hydrogen peroxide, a foam-deposit inhibitor, and a solvent.

摘要翻译： 本发明涉及用于生产硅质膜的方法中的浸渍溶液。 本发明提供一种浸渍溶液和采用该溶液的硅质薄膜生产方法。 浸渍溶液能够在具有凹部和凸部的基板的凹部中形成均匀的硅质膜。 用聚硅氮烷组合物涂覆基材，然后在火焰之前浸入溶液中。 浸渍溶液包括过氧化氢，泡沫沉积抑制剂和溶剂。

公开(公告)号：US20110014796A1

公开(公告)日：2011-01-20

申请号：US12919782

申请日：2009-03-03

申请人： Masanobu Hayashi

发明人： Masanobu Hayashi

IPC分类号： H01L21/31 ,  H01B3/20

CPC分类号： H01L21/02282 ,  C03C1/008 ,  C03C2203/20 ,  C08G77/62 ,  C09D183/16 ,  C23C18/1212 ,  C23C18/122

摘要： This invention relates to a dipping solution used in a process for producing a siliceous film. The present invention provides a dipping solution and a siliceous film-production process employing the solution. The dipping solution enables to form a homogeneous siliceous film even in concave portions of a substrate having concave portions and convex portions. The substrate is coated with a polysilazane composition, and then dipped in the solution before fire. The dipping solution comprises hydrogen peroxide, a foam-deposit inhibitor, and a solvent.

摘要翻译： 本发明涉及用于生产硅质膜的方法中的浸渍溶液。 本发明提供一种浸渍溶液和采用该溶液的硅质薄膜生产方法。 浸渍溶液能够在具有凹部和凸部的基板的凹部中形成均匀的硅质膜。 用聚硅氮烷组合物涂覆基材，然后在火焰之前浸入溶液中。 浸渍溶液包括过氧化氢，泡沫沉积抑制剂和溶剂。

公开(公告)号：US08889229B2

公开(公告)日：2014-11-18

申请号：US12918069

申请日：2009-02-27

申请人： Tatsuro Nagahara ,  Masanobu Hayashi

发明人： Tatsuro Nagahara ,  Masanobu Hayashi

IPC分类号： B05D3/02 ,  H01L21/02 ,  C09D183/16 ,  H01L21/316 ,  H01L21/312 ,  H01L21/762 ,  C08G77/62

CPC分类号： H01L21/3125 ,  C08G77/62 ,  C09D183/16 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/316 ,  H01L21/76224 ,  Y10T428/24612

摘要： The present invention provides a method for formation of a siliceous film containing nitrogen in a low concentration. The method according to the present invention comprises the steps of: applying a polysilazane composition on an engraved substrate surface, to form a coating layer; hardening the coating layer only in the part adjacent to the substrate surface, to form a covering film along the shape of the engraved substrate; and removing the polysilazane composition of the coating layer in the part not hardened in the above covering film-formation step. According to this method, two or more siliceous films can be formed and layered.

摘要翻译： 本发明提供一种形成含有低浓度氮的硅质膜的方法。 根据本发明的方法包括以下步骤：在雕刻的基材表面上施加聚硅氮烷组合物以形成涂层; 仅在与基板表面相邻的部分中硬化涂层，以沿着雕刻的基板的形状形成覆盖膜; 并且在上述覆盖膜形成步骤中未硬化的部分中除去涂层的聚硅氮烷组合物。 根据该方法，可以形成并层叠两层以上的硅质膜。