公开(公告)号：US07005644B2

公开(公告)日：2006-02-28

申请号：US10658407

申请日：2003-09-10

申请人： Tomohiro Ishikawa ,  Masashi Ueno

发明人： Tomohiro Ishikawa ,  Masashi Ueno

IPC分类号： G01J1/02

CPC分类号： H01L37/00 ,  G01J5/02 ,  G01J5/023 ,  G01J5/08 ,  G01J5/0853 ,  G01J5/10 ,  H01L27/16

摘要： A thermal infrared detector includes a substrate; a temperature sensor having electrical characteristics changed in accordance with changes in temperature caused by infrared absorption; heat-insulating supporting legs supporting and thermally insulating the temperature sensor and serving as signal lines for reading out electrical signals from the temperature sensor; and an infrared absorption layer in thermal contact the temperature sensor. Each of the temperature sensor, the heat-insulating supporting legs, and the infrared absorption layer is in a different plane and the planes are spatially separated from each other.

摘要翻译： 热红外检测器包括基板; 具有根据红外吸收引起的温度变化而发生电特性变化的温度传感器; 隔热支撑腿支撑和隔热温度传感器并用作用于从温度传感器读出电信号的信号线; 以及与温度传感器热接触的红外吸收层。 温度传感器，绝热支撑腿和红外线吸收层中的每一个处于不同的平面中，并且平面在空间上彼此分离。

公开(公告)号：US06211520B1

公开(公告)日：2001-04-03

申请号：US09593244

申请日：2000-06-14

申请人： Tomohiro Ishikawa ,  Masashi Ueno

发明人： Tomohiro Ishikawa ,  Masashi Ueno

IPC分类号： G01J510

CPC分类号： G01J5/20

摘要： An infrared sensor includes a first infrared sensing element separated by a dielectric layer from on a silicon substrate and thermally isolated from the substrate by a void in the dielectric layer. The sensor has a second temperature sensing element which detects the temperature of the whole sensor. The output difference between the first and second sensor elements is used as gate/source voltage of a MOSFET. The current variation of the MOSFET is read out as a discharge from a capacitor connected to the MOSFET. The noise in the sensor is suppressed, and performance is improved. An infrared sensor array includes the sensors arranged in an array.

摘要翻译： 红外传感器包括由硅衬底上的电介质层分离的第一红外感测元件，并且通过电介质层中的空隙与衬底热隔离。 传感器具有检测整个传感器的温度的第二温度感测元件。 第一和第二传感器元件之间的输出差用作MOSFET的栅/源电压。 MOSFET的电流变化作为从连接到MOSFET的电容器的放电读出。 抑制了传感器的噪音，提高了性能。 红外线传感器阵列包括排列成阵列的传感器。

公开(公告)号：US5998816A

公开(公告)日：1999-12-07

申请号：US926974

申请日：1997-09-10

申请人： Yoshiyuki Nakaki ,  Tomohiro Ishikawa ,  Masashi Ueno ,  Hisatoshi Hata ,  Masafumi Kimata

发明人： Yoshiyuki Nakaki ,  Tomohiro Ishikawa ,  Masashi Ueno ,  Hisatoshi Hata ,  Masafumi Kimata

IPC分类号： G01D21/00 ,  B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  H01L21/302 ,  H01L21/3065 ,  H01L37/02 ,  H01L27/20 ,  H01L29/84

CPC分类号： H01L37/02 ,  B81C1/00571 ,  G01P15/0802 ,  B81B2201/0278 ,  B81B2207/015 ,  B81C2201/014 ,  Y10S73/01 ,  Y10S73/04

摘要： A sensor element provided with a silicon substrate having a semiconductor circuit, a sensing-element portion formed on the silicon substrate and connected to the semiconductor circuit, and a cavity portion formed by removing a silicon substrate portion below the sensing-element portion, in which a removal resistance region having resistance against substrate removal is provided in the silicon substrate between the semiconductor circuit and the cavity portion.

摘要翻译： 一种传感器元件，设置有具有半导体电路的硅衬底，形成在硅衬底上并连接到半导体电路的感测元件部分，以及通过去除感测元件部分下方的硅衬底部分形成的空腔部分，其中 在半导体电路和空腔部分之间的硅衬底中提供具有抵抗衬底移除的去除电阻区域。

公开(公告)号：US5640013A

公开(公告)日：1997-06-17

申请号：US543040

申请日：1995-10-13

申请人： Tomohiro Ishikawa ,  Masashi Ueno ,  Osamu Kaneda

发明人： Tomohiro Ishikawa ,  Masashi Ueno ,  Osamu Kaneda

IPC分类号： G01J1/02 ,  H01L27/14 ,  H01L27/146 ,  H01L37/02 ,  H04N5/33 ,  G01J5/20

CPC分类号： H01L27/146

摘要： An infrared sensor includes a substrate, an insulator layer formed on the substrate, and a heat-sensitive semiconductor layer having a temperature dependent electrical resistance with a relatively large temperature coefficient of resistance. In order to improve sensitivity of the heat-sensitive semiconductor layer for detecting infrared rays, high concentration impurity semiconductor regions are positioned on either side of the semiconductor layer to form a semiconductor section. The high concentration impurity semiconductor sections have a higher absorption coefficient of infrared rays than the semiconductor layer. Thus, the semiconductor section itself both detects and absorbs infrared rays with or without providing any heat-absorbing layer. Further, electrodes are connected to each high-concentration impurity layer, which form an ohmic contact therewith.

摘要翻译： 红外线传感器包括基板，形成在基板上的绝缘体层，以及具有温度相对较高的电阻温度系数的热敏半导体层。 为了提高用于检测红外线的热敏半导体层的灵敏度，高浓度杂质半导体区域位于半导体层的任一侧上以形成半导体部分。 高浓度杂质半导体部分的红外线吸收系数比半导体层高。 因此，半导体部分本身也可以检测和吸收具有或不具有任何吸热层的红外线。 此外，电极连接到与其形成欧姆接触的每个高浓度杂质层。

公开(公告)号：US20080298181A1

公开(公告)日：2008-12-04

申请号：US12128208

申请日：2008-05-28

申请人： Masashi Ueno ,  Teruyoshi Kogure

发明人： Masashi Ueno ,  Teruyoshi Kogure

IPC分类号： G11B7/00

CPC分类号： G11B7/0945 ,  G11B7/00736 ,  G11B7/0912 ,  G11B7/094 ,  G11B7/0941 ,  G11B7/1267

摘要： According to one embodiment, a control method, includes moving a pickup head to an adjustment position adjusting the quantity of adjustment of focus balance measuring the amplitude of an RF signal in the adjustment position adjusting the focus balance adjustment quantity and measuring the RG signal amplitude a plurality of times estimating the focus balance adjustment quantity at which the RF signal amplitude is maximized from the measured focus balance adjustment quantities and RF signal amplitude moving the pickup head to a different adjustment position estimating the focus balance adjustment quantity at which the RF signal amplitude is maximized in the different adjustment position by adjusting the focus balance adjustment quantity and measuring the RF signal amplitude a plurality of times and adjusting the focus balance adjustment quantity to the focus balance adjustment quantity estimated in the different adjustment position.

摘要翻译： 根据一个实施例，一种控制方法包括将拾取头移动到调节位置的调整位置的调整位置，调节聚焦平衡的调整量，在调节聚焦平衡调节量的调整位置中测量RF信号的幅度，并测量RG信号振幅a 从测量的聚焦平衡调节量估计RF信号幅度最大化的聚焦平衡调节量和将拾取头移动到不同调节位置的RF信号的多次，估计RF信号振幅为的聚焦平衡调节量 通过调整聚焦平衡调节量并且测量RF信号幅度多次并将焦点平衡调节量调整到在不同调节位置中估计的焦距平衡调节量，使不同调节位置最大化。

公开(公告)号：US07603043B2

公开(公告)日：2009-10-13

申请号：US11485221

申请日：2006-07-12

申请人： Masahiro Aoki ,  Yasushi Higashiyama ,  Masashi Ueno

发明人： Masahiro Aoki ,  Yasushi Higashiyama ,  Masashi Ueno

IPC分类号： H04B10/06

CPC分类号： G11B7/13 ,  G11B7/0901 ,  G11B7/0906 ,  G11B7/094 ,  G11B7/1275 ,  G11B2007/0006

摘要： According to one embodiment, a plurality of light receiving elements photoelectrically convert light signals having information signals, respectively. A plurality of first amplification circuits amplify currents of electric signals from the respective light receiving elements. A selecting section selectively outputs one of signals amplified by the plurality of first amplification circuits. A second amplification circuit amplifies a voltage of the signal output from the selecting section, and supplies the signal to the outside.

摘要翻译： 根据一个实施例，多个光接收元件分别对具有信息信号的光信号进行光电转换。 多个第一放大电路放大来自各个光接收元件的电信号的电流。 选择部分选择性地输出由多个第一放大电路放大的信号之一。 第二放大电路放大从选择部分输出的信号的电压，并将信号提供给外部。

公开(公告)号：US5040038A

公开(公告)日：1991-08-13

申请号：US262056

申请日：1988-10-24

申请人： Naoki Yutani ,  Sotoju Asai ,  Shiro Hine ,  Satoshi Hirose ,  Hidekazu Yamamoto ,  Masashi Ueno

发明人： Naoki Yutani ,  Sotoju Asai ,  Shiro Hine ,  Satoshi Hirose ,  Hidekazu Yamamoto ,  Masashi Ueno

IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/365 ,  H04N5/372

CPC分类号： H01L27/14831

摘要： A solid-state image sensor comprises photoelectric converting devices (22) formed on a p type semiconductor substrate (1), transfer gates (26) for reading signal charges therefrom, scanning lines (21) for selecting the transfer gates (26), and transfer electrodes (11) of the first layer and transfer electrodes (12) of the second layer alternately disposed for transferring in the vertical direction the read signal charges. All the electrodes of the transfer gates (26) are formed integrally with the transfer electrodes (12) of the second layer, with the result that all the electrodes of the transfer gates (26) are common to the transfer electrodes of the same layer (the second layer). Although the potential wall (340) is formed in the transfer channel (3) beneath the transfer electrode (12) connected to the transfer gate (26), the same is insulated from adjacent the transfer electrode (11) on the charge transfer direction side. As a result, when a voltage is applied to the transfer electrode adjacent thereto, the signal charges are fully transferred.

摘要翻译： 固态图像传感器包括形成在p型半导体衬底（1）上的光电转换器件（22），用于读取信号电荷的传输门（26），用于选择传输门（26）的扫描线（21） 交替地设置第一层的电极（11）和第二层的传输电极（12），用于在垂直方向上传送读取信号电荷。 传输栅极（26）的所有电极与第二层的传输电极（12）整体形成，结果是传输栅极（26）的所有电极对同一层的传输电极是共同的（ 第二层）。 尽管在连接到传输栅极（26）的传输电极（12）下方的传输沟道（3）中形成了电位壁（340），但是在电荷转移方向侧上与传输电极（11）相邻的电位壁 。 结果，当对与其相邻的转印电极施加电压时，信号电荷被完全转印。

公开(公告)号：US20110210251A1

公开(公告)日：2011-09-01

申请号：US13035173

申请日：2011-02-25

申请人： Takahiro Onakado ,  Masashi Ueno

发明人： Takahiro Onakado ,  Masashi Ueno

IPC分类号： H01L25/00

CPC分类号： H04N5/33 ,  H01L27/14669 ,  H04N5/3651 ,  H04N5/3742

摘要： A thermal infrared solid-state imaging device includes a horizontal scanning circuit for scanning a pixel area horizontally to read an infrared image, and vertical scanning circuits provided at both ends of the pixel area. The vertical scanning circuits drive a drive line by applying a driving voltage at both ends of the drive line (in two-end driving). Further a bias voltage is applied at the end of the pixel area to a bias line connected to differential integrating circuits.

摘要翻译： 热红外固体摄像装置包括：水平扫描电路，用于水平扫描像素区域以读取红外图像;以及垂直扫描电路，设置在像素区域的两端。 垂直扫描电路通过在驱动线的两端施加驱动电压来驱动驱动线（在两端驱动中）。 此外，在像素区域的末端施加偏置电压到连接到差分积分电路的偏置线。

公开(公告)号：US08502872B2

公开(公告)日：2013-08-06

申请号：US12721249

申请日：2010-03-10

申请人： Masashi Ueno

发明人： Masashi Ueno

IPC分类号： H04N7/18

CPC分类号： G01J1/46 ,  H04N5/33

摘要： A thermal infrared solid-state imaging device includes a pixel array having pixels diodes, a vertical power supply line connected to horizontal drive lines and commonly connecting the horizontal drive lines, integrating circuits for integrating voltages at the ends of the vertical signal lines for a predetermined integration time, and current sources connected to the vertical signal lines at an opposite end to the end of the vertical signal line which is connected to the integrating circuit. The integration time is equally divided substantially into two periods, and during one divided period of the integration time, energization is performed between one end of the vertical power supply line and the current source, and during the other divided period of the integration time, the energization is performed between other end of the vertical power supply line and the current source.

摘要翻译： 一种热红外固体摄像器件，包括具有像素二极管的像素阵列，连接到水平驱动线并且共同连接水平驱动线的垂直电源线，用于将垂直信号线的端部处的电压积分用于预定的 积分时间和与连接到积分电路的垂直信号线的末端相对的垂直信号线连接的电流源。 积分时间基本上等分为两个周期，在积分时间的一个分割周期内，在垂直电源线的一端和电流源之间进行通电，在积分时间的另一个分割周期内， 在垂直电源线的另一端和电流源之间进行通电。

公开(公告)号：US20060157812A1

公开(公告)日：2006-07-20

申请号：US11330259

申请日：2006-01-12

申请人： Yasuaki Ohta ,  Masashi Ueno

发明人： Yasuaki Ohta ,  Masashi Ueno

IPC分类号： H01L31/058

CPC分类号： H01L31/103 ,  G01J5/20 ,  H01L27/14649

摘要： An infrared solid-state image pickup apparatus includes an SOI substrate having a silicon oxide film layer and an SOI layer on a silicon substrate, a detecting portion which is provided with a PN junction diode formed on the SOI substrate and converts a temperature change generated by an incident infrared ray to an electric signal, and a support that holds the detecting portion with a space from the silicon substrate of the SOI substrate. An impurity in a semiconductor layer constituting the PN junction diode is distributed such that carriers flowing in the semiconductor layer are distributed in such an uneven manner as being much in a central portion of the semiconductor layer than in a peripheral portion thereof.