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    Infrared focal plane array
    2.
    发明授权
    Infrared focal plane array 失效
    红外焦平面阵列

    公开(公告)号：US6031231A

    公开(公告)日：2000-02-29

    申请号：US927407

    申请日：1997-09-10

    申请人： Masafumi Kimata ,  Tomohiro Ishikawa ,  Kazuhiko Tsutsumi ,  Hisatoshi Hata

    发明人： Masafumi Kimata ,  Tomohiro Ishikawa ,  Kazuhiko Tsutsumi ,  Hisatoshi Hata

    IPC分类号： G01J1/02 ,  G01J5/02 ,  G01J5/10 ,  G01J5/12 ,  H01L27/14 ,  H01L27/146 ,  H01L35/32 ,  H01L37/02 ,  H04N5/33 ,  G01J5/20

    CPC分类号： H01L27/14649 ,  G01J5/08 ,  G01J5/0853 ,  G01J5/10 ,  H01L37/02

    摘要： A two-dimensional infrared focal plane array of temperature detecting units is provided with the temperature detecting units being arranged for every pixel in a two-dimensional arrangement on a semiconductor substrate. Each temperature detecting unit is formed integrally with readout circuitry. Each temperature detecting unit further has a temperature detecting portion which is supported by support legs made of a high thermal resistance material to reduce heat flow to the semiconductor substrate. Each temperature detecting unit also has a temperature detecting element with an infrared ray absorbing portion which is spliced by at least one splicing pillar with the temperature detecting element.

    摘要翻译： 温度检测单元的二维红外焦平面阵列设置有温度检测单元，其布置在半导体基板上的二维布置中的每个像素。 每个温度检测单元与读出电路整体形成。 每个温度检测单元还具有温度检测部分，其由由高热阻材料制成的支撑腿支撑，以减少对半导体基板的热流。 每个温度检测单元还具有温度检测元件，其具有通过至少一个具有温度检测元件的拼接柱拼接的红外线吸收部分。

    Thermal infrared-detector array and method of fabrication thereof
    4.
    发明授权
    Thermal infrared-detector array and method of fabrication thereof 有权
    热红外探测器阵列及其制造方法

    公开(公告)号：US06483111B1

    公开(公告)日：2002-11-19

    申请号：US09394095

    申请日：1999-09-13

    申请人： Tomohiro Ishikawa ,  Masafumi Kimata

    发明人： Tomohiro Ishikawa ,  Masafumi Kimata

    IPC分类号： G01J520

    CPC分类号： H01L27/14649 ,  G01J5/20 ,  H01L27/14689

    摘要： A thermal infrared-detector array has semiconductor-junction elements as detectors. It has high sensitivity and low noise and is fabricated in semiconductor-fabrication process. The semiconductor-junction elements are located in a monocrystalline silicon layer overlying a silicon-oxide layer on a monocrystalline silicon substrate. A signal-output circuit reading out signals from the detector elements includes transistors located on the monocrystalline silicon substrate.

    摘要翻译： 热红外检测器阵列具有作为检测器的半导体结元件。 它具有高灵敏度和低噪声，并且在半导体制造工艺中制造。 半导体结元件位于单晶硅衬底上的硅氧化物层上的单晶硅层中。 从检测器元件读出信号的信号输出电路包括位于单晶硅衬底上的晶体管。

    Infrared sensor having a heat sensitive semiconductor portion that detects and absorbs infrared rays
    5.
    发明授权
    Infrared sensor having a heat sensitive semiconductor portion that detects and absorbs infrared rays 失效
    具有检测并吸收红外线的热敏半导体部分的红外线传感器

    公开(公告)号：US5640013A

    公开(公告)日：1997-06-17

    申请号：US543040

    申请日：1995-10-13

    申请人： Tomohiro Ishikawa ,  Masashi Ueno ,  Osamu Kaneda

    发明人： Tomohiro Ishikawa ,  Masashi Ueno ,  Osamu Kaneda

    IPC分类号： G01J1/02 ,  H01L27/14 ,  H01L27/146 ,  H01L37/02 ,  H04N5/33 ,  G01J5/20

    CPC分类号： H01L27/146

    摘要： An infrared sensor includes a substrate, an insulator layer formed on the substrate, and a heat-sensitive semiconductor layer having a temperature dependent electrical resistance with a relatively large temperature coefficient of resistance. In order to improve sensitivity of the heat-sensitive semiconductor layer for detecting infrared rays, high concentration impurity semiconductor regions are positioned on either side of the semiconductor layer to form a semiconductor section. The high concentration impurity semiconductor sections have a higher absorption coefficient of infrared rays than the semiconductor layer. Thus, the semiconductor section itself both detects and absorbs infrared rays with or without providing any heat-absorbing layer. Further, electrodes are connected to each high-concentration impurity layer, which form an ohmic contact therewith.

    摘要翻译： 红外线传感器包括基板，形成在基板上的绝缘体层，以及具有温度相对较高的电阻温度系数的热敏半导体层。 为了提高用于检测红外线的热敏半导体层的灵敏度，高浓度杂质半导体区域位于半导体层的任一侧上以形成半导体部分。 高浓度杂质半导体部分的红外线吸收系数比半导体层高。 因此，半导体部分本身也可以检测和吸收具有或不具有任何吸热层的红外线。 此外，电极连接到与其形成欧姆接触的每个高浓度杂质层。

    Thermal infrared detector and infrared focal plane array
    6.
    发明授权
    Thermal infrared detector and infrared focal plane array 有权
    热红外探测器和红外焦平面阵列

    公开(公告)号：US07005644B2

    公开(公告)日：2006-02-28

    申请号：US10658407

    申请日：2003-09-10

    申请人： Tomohiro Ishikawa ,  Masashi Ueno

    发明人： Tomohiro Ishikawa ,  Masashi Ueno

    IPC分类号： G01J1/02

    CPC分类号： H01L37/00 ,  G01J5/02 ,  G01J5/023 ,  G01J5/08 ,  G01J5/0853 ,  G01J5/10 ,  H01L27/16

    摘要： A thermal infrared detector includes a substrate; a temperature sensor having electrical characteristics changed in accordance with changes in temperature caused by infrared absorption; heat-insulating supporting legs supporting and thermally insulating the temperature sensor and serving as signal lines for reading out electrical signals from the temperature sensor; and an infrared absorption layer in thermal contact the temperature sensor. Each of the temperature sensor, the heat-insulating supporting legs, and the infrared absorption layer is in a different plane and the planes are spatially separated from each other.

    摘要翻译： 热红外检测器包括基板; 具有根据红外吸收引起的温度变化而发生电特性变化的温度传感器; 隔热支撑腿支撑和隔热温度传感器并用作用于从温度传感器读出电信号的信号线; 以及与温度传感器热接触的红外吸收层。 温度传感器，绝热支撑腿和红外线吸收层中的每一个处于不同的平面中，并且平面在空间上彼此分离。

    Infrared sensor and infrared sensor array using the same
    7.
    发明授权
    Infrared sensor and infrared sensor array using the same 失效
    红外线传感器和红外线传感器阵列使用相同

    公开(公告)号：US06211520B1

    公开(公告)日：2001-04-03

    申请号：US09593244

    申请日：2000-06-14

    申请人： Tomohiro Ishikawa ,  Masashi Ueno

    发明人： Tomohiro Ishikawa ,  Masashi Ueno

    IPC分类号： G01J510

    CPC分类号： G01J5/20

    摘要： An infrared sensor includes a first infrared sensing element separated by a dielectric layer from on a silicon substrate and thermally isolated from the substrate by a void in the dielectric layer. The sensor has a second temperature sensing element which detects the temperature of the whole sensor. The output difference between the first and second sensor elements is used as gate/source voltage of a MOSFET. The current variation of the MOSFET is read out as a discharge from a capacitor connected to the MOSFET. The noise in the sensor is suppressed, and performance is improved. An infrared sensor array includes the sensors arranged in an array.

    摘要翻译： 红外传感器包括由硅衬底上的电介质层分离的第一红外感测元件，并且通过电介质层中的空隙与衬底热隔离。 传感器具有检测整个传感器的温度的第二温度感测元件。 第一和第二传感器元件之间的输出差用作MOSFET的栅/源电压。 MOSFET的电流变化作为从连接到MOSFET的电容器的放电读出。 抑制了传感器的噪音，提高了性能。 红外线传感器阵列包括排列成阵列的传感器。

    METHOD OF CORRECTING EMISSIVE DISPLAY BURN-IN
    9.
    发明申请
    METHOD OF CORRECTING EMISSIVE DISPLAY BURN-IN 有权
    校正EMISSIVE显示器的方法

    公开(公告)号：US20100103198A1

    公开(公告)日：2010-04-29

    申请号：US12257072

    申请日：2008-10-23

    申请人： Robert D. Polak ,  Andrew N. Cady ,  Tomohiro Ishikawa

    发明人： Robert D. Polak ,  Andrew N. Cady ,  Tomohiro Ishikawa

    IPC分类号： G09G5/10

    CPC分类号： G09G3/30 ,  G09G3/3208 ,  G09G2320/0285 ,  G09G2320/046 ,  G09G2320/048

    摘要： A method and apparatus are provided for correcting burn-in in a flat screen display. The method includes the steps of determining a maximum cumulative luminance of each pixel (15) within the display (14) based upon a usage of the pixel, providing a modulation map (40) of the display (14) from the maximum cumulative luminance of each pixel (15) within the display (14), transforming the modulation map (40) based upon the maximum cumulative luminance of groups of adjacent pixels to provide a modulation index for each pixel location of the map (40), comparing the modulation indexes with a set of threshold values and adjusting a luminosity of associated pixels (15) of the display (40) when the modulation index exceeds the threshold.

    摘要翻译： 提供一种用于校正平板显示器中的老化的方法和装置。 该方法包括以下步骤：基于像素的使用来确定显示器（14）内的每个像素（15）的最大累积亮度，从显示器（14）的最大累积亮度提供显示器（14）的调制图（40） 显示器（14）内的每个像素（15），基于相邻像素组的最大累积亮度来变换调制图（40），以提供对于地图（40）的每个像素位置的调制指数，比较调制指数 具有一组阈值并且当调制指数超过阈值时调节显示器（40）的相关联像素（15）的亮度。

    ELECTRONIC DEVICE AND LC SHUTTER WITH DIFFUSIVE REFLECTIVE POLARIZER
    10.
    发明申请
    ELECTRONIC DEVICE AND LC SHUTTER WITH DIFFUSIVE REFLECTIVE POLARIZER 有权
    电子设备和LC快门与扩散反射极化器

    公开(公告)号：US20090201447A1

    公开(公告)日：2009-08-13

    申请号：US12028092

    申请日：2008-02-08

    申请人： Jim Zhuang ,  Tomohiro Ishikawa ,  Robert Polak

    发明人： Jim Zhuang ,  Tomohiro Ishikawa ,  Robert Polak

    IPC分类号： G02F1/1335

    CPC分类号： G02F1/13306 ,  G02F1/133504 ,  G02F1/133536 ,  G02F1/133602 ,  G02F1/13363 ,  G02F2001/133531 ,  G02F2001/133545 ,  G02F2202/40 ,  G02F2203/03 ,  G02F2203/04 ,  G02F2203/09

    摘要： An electronic device (200) includes a display (202) and an LC shutter (204), at least a portion of which is operatively positioned over the display (202). The LC shutter (204) provides switching between a transparent state and a diffusive state with high image integrity, and high transmission in the transparent state. In one embodiment, the electronic device (200) further includes control logic (206) operatively coupled to the LC shutter (204) to provide control signals (212) to the LC shutter (204) to effect the transparent state. The LC shutter (204) includes a first dichroic polarizer (300), such as a broadband dichroic polarizer, an LC cell (304), and a diffusive reflective polarizer (307). The LC cell (304) is interposed between the first dichroic polarizer (300) and the diffusive reflective polarizer (307). Related methods are also set forth.

    摘要翻译： 电子设备（200）包括显示器（202）和LC快门（204），其至少一部分可操作地定位在显示器（202）上方。 LC快门（204）提供在透明状态和具有高图像完整性的扩散状态和透明状态下的高透射率之间的切换。 在一个实施例中，电子设备（200）还包括可操作地耦合到LC快门（204）的控制逻辑（206），以向LC快门（204）提供控制信号（212）以实现透明状态。 LC快门（204）包括第一二向色偏振器（300），诸如宽带二向色偏振器，LC单元（304）和漫反射偏振器（307）。 LC单元（304）插入在第一二向色偏振器（300）和漫反射偏振器（307）之间。 还介绍了相关方法。