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    Organosilicone homeotropic alignment layer with OH group
    3.
    发明授权
    Organosilicone homeotropic alignment layer with OH group 失效
    有机硅阳离子取向层与OH基

    公开(公告)号：US4472028A

    公开(公告)日：1984-09-18

    申请号：US308615

    申请日：1981-10-05

    申请人： Michio Ooue ,  Kishiro Iwasaki ,  Hiroaki Hachino ,  Mitsuru Ura ,  Ryoichi Sudo

    发明人： Michio Ooue ,  Kishiro Iwasaki ,  Hiroaki Hachino ,  Mitsuru Ura ,  Ryoichi Sudo

    IPC分类号： G02F1/133 ,  G02F1/1337 ,  G02F1/137

    CPC分类号： G02F1/133719

    摘要： A liquid crystal display device comprising two substrates being provided in parallel to each other at a given distance and each having a Nesa film on the counterposed surface, at least one of the substrates being transparent, and a liquid crystal being filled between the substrates, the counterposed surfaces of the substrates each being coated with polymer of organosilicone compound having groups reacting with the substrates to a thickness of 300-1,500 .ANG. as an alignment film. The device has thick alignment films and good electrooptical characteristics.

    摘要翻译： 一种液晶显示装置，其特征在于，具有以规定距离彼此平行地设置的两个基板，在所述对置面上具有Nesa膜，所述基板中的至少一个是透明的，并且在所述基板之间填充液晶， 基板的对置表面各自涂覆有具有与基板反应的基团的有机硅化合物的聚合物，厚度为300-1,500作为取向膜。 该器件具有厚的取向膜和良好的电光特性。

    Semiconductor device and fabrication method thereof
    4.
    发明授权
    Semiconductor device and fabrication method thereof 失效
    半导体器件及其制造方法

    公开(公告)号：US4651191A

    公开(公告)日：1987-03-17

    申请号：US880942

    申请日：1986-06-25

    申请人： Michio Ooue ,  Yoko Wakui ,  Hiroaki Hachino

    发明人： Michio Ooue ,  Yoko Wakui ,  Hiroaki Hachino

    IPC分类号： H01L21/60 ,  H01L21/603 ,  H01L23/485 ,  H01L23/54 ,  H01L23/48

    CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/13099 ,  H01L2224/81801 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301

    摘要： Disclosed is a semiconductor device constructed such that among elements forming a brazing material for bonding an electrode on a semiconductor substrate to an external electrode, the amounts of those elements which react with the material of the electrode or external electrode and form a compound harder and more brittle than the electrode material are smaller on the portion coming into contact with the electrode or external electrode than at the other portions. A fabrication method of such a semiconductor device is also disclosed, which method involving the steps of laminating and depositing an at least two-layered metallic layer on the surface of the electrode on the semiconductor substrate or on the surface of the external electrode, bringing the electrodes of the at least two-layered metallic layer into intimate contact with each other while opposing one another, and bonding them together in the presence of the force of pressure applied to both electrodes while they are being heated to a temperature close to an eutectic temperature of an alloy consisting of the metals of the uppermost layer and subsequent layer, immediately therebelow, of the metallic layer.

    摘要翻译： 公开了一种半导体器件，其被构造成使得在形成用于将半导体衬底上的电极接合到外部电极的钎焊材料的元素中，与电极或外部电极的材料反应并形成复合物的那些元素的量更多 比与其他部分相比，与电极或外部电极接触的部分比电极材料脆。 还公开了一种这样的半导体器件的制造方法，该方法包括以下步骤：在半导体衬底或外部电极的表面上的电极表面上层叠和沉积至少两层的金属层， 所述至少两层金属层的电极彼此相对地彼此紧密接触，并且在施加到两个电极的压力的存在下将它们结合在一起，同时将它们加热到接近共晶温度的温度 由最上层的金属和紧邻的金属层的后续层组成的合金。