公开(公告)号：US4516149A

公开(公告)日：1985-05-07

申请号：US315905

申请日：1981-10-28

申请人： Yoko Wakui ,  Hiroaki Hachino ,  Mamoru Sawahata ,  Tasao Soga ,  Tomio Yasuda ,  Michio Ooue

发明人： Yoko Wakui ,  Hiroaki Hachino ,  Mamoru Sawahata ,  Tasao Soga ,  Tomio Yasuda ,  Michio Ooue

IPC分类号： H01L29/80 ,  H01L21/33 ,  H01L21/331 ,  H01L21/60 ,  H01L23/14 ,  H01L23/482 ,  H01L23/498 ,  H01L23/522 ,  H01L29/70 ,  H01L29/73 ,  H01L29/74 ,  H01L29/861 ,  H01L23/48 ,  H01L29/44 ,  H01L29/52

CPC分类号： H01L23/5227 ,  H01L23/145 ,  H01L23/4824 ,  H01L23/4985 ,  H01L24/05 ,  H01L24/50 ,  H01L2224/04042 ,  H01L2224/49107 ,  H01L2224/4911 ,  H01L2224/73269 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/14

摘要： A semiconductor device is disclosed which is provided with at least one flexible conducting film having an inner electrode portion and an outer electrode portion. The inner electrode portion is conductively bonded to at least one of two kinds of electrode films formed on one main surface of a semiconductor substrate, and has a form similar to the shape of the electrode film. The outer electrode portion is integrated with the inner electrode portion into one body but is not bonded to the electrode film. The conducting film can be previously bonded to a transparent insulating film, if desired, and is arranged in registry with the electrode film on the semiconductor substrate, while being supported by the insulating film. Accordingly, the inner electrode portion of the conducting film is bonded to the electrode film having a complicated pattern, readily and accurately. The inner electrode portion serves to reduce the electric resistance of the electrode film and to increase the current capacity of the electrode. If a transparent insulating film has been used, it can be removed after device formation, if desired.

摘要翻译： 公开了一种半导体器件，其具有至少一个具有内部电极部分和外部电极部分的柔性导电膜。 内部电极部分导电结合到形成在半导体衬底的一个主表面上的两种电极膜中的至少一种，并且具有与电极膜的形状相似的形式。 外电极部与内电极部一体地形成为一体，但不与电极膜接合。 如果需要，可以将导电膜预先粘合到透明绝缘膜上，并且在由绝缘膜支撑的同时与半导体衬底上的电极膜对准布置。 因此，导电膜的内部电极部分容易且准确地接合到具有复杂图案的电极膜。 内部电极部分用于减小电极膜的电阻并增加电极的电流容量。 如果已经使用透明绝缘膜，则如果需要，可以在器件形成之后去除透明绝缘膜。

公开(公告)号：US4970575A

公开(公告)日：1990-11-13

申请号：US507096

申请日：1990-04-09

申请人： Tasao Soga ,  Hiroaki Hachino ,  Mamoru Sawahata ,  Fumio Nakano ,  Fumiyuki Kobayashi ,  Seigou Yukutake

发明人： Tasao Soga ,  Hiroaki Hachino ,  Mamoru Sawahata ,  Fumio Nakano ,  Fumiyuki Kobayashi ,  Seigou Yukutake

IPC分类号： H01L23/34 ,  H01L23/28 ,  H01L23/29 ,  H01L23/31 ,  H01L23/473 ,  H01L25/10

CPC分类号： H01L23/3185 ,  H01L23/293 ,  H01L23/3157 ,  H01L23/473 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/105 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/97 ,  H01L2225/1023 ,  H01L2225/107 ,  H01L2225/1094 ,  H01L2924/01004 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15312 ,  H01L2924/15313 ,  H01L2924/18161

摘要： A substrate and semiconductor chips are connected by solder bumps and a vacant space around the solder bumps is coated with resin in such a degree that the tops of the semiconductor chips are not coated therewith. Epoxy resin or a resin having a smaller thermal expansion coefficient than the epoxy resin is used in the resin coating, and an inorganic material having a smaller thermal expansion coefficient than said resin is mixed therein.

摘要翻译： 衬底和半导体芯片通过焊料凸块连接，并且焊料凸块周围的空白空间用树脂涂覆，使得半导体芯片的顶部不被涂覆。 在树脂涂料中使用环氧树脂或具有比环氧树脂更小的热膨胀系数的树脂，并且将具有比所述树脂热膨胀系数小的无机材料混合在其中。

公开(公告)号：US4825284A

公开(公告)日：1989-04-25

申请号：US940485

申请日：1986-12-10

申请人： Tasao Soga ,  Marahiro Goda ,  Fumio Nakano ,  Tadao Kushima ,  Nobuyuki Ushifusa ,  Fumiyuki Kobayashi ,  Mamoru Sawahata

发明人： Tasao Soga ,  Marahiro Goda ,  Fumio Nakano ,  Tadao Kushima ,  Nobuyuki Ushifusa ,  Fumiyuki Kobayashi ,  Mamoru Sawahata

IPC分类号： H01L23/52 ,  H01L21/56 ,  H01L21/60 ,  H01L23/433 ,  H01L23/473 ,  H01L23/498 ,  H01L23/538 ,  H01L25/11 ,  H01L39/02

CPC分类号： H01L24/81 ,  H01L21/563 ,  H01L23/4332 ,  H01L23/49827 ,  H01L23/5385 ,  H01L25/112 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/15787 ,  H01L2924/18161 ,  H01L2924/3011 ,  H01L2924/351

摘要： A semiconductor resin package structure formed according to the flip-chip connection method and permitting to cool the rear surface of semiconductor chips, comprising semiconductor chip and carrier substrate which is soldered on one surface thereof to electrodes of the semiconductor chip according to the flip-chip connection method, the gap between the semiconductor chip and the carrier substrate being filled with resin having a thermal expansion coefficient, which is approximately equal to that of used solder, the electrodes of the semiconductor chip being electrically connected with terminals on the other surface of the carrier substrate through the soldered portions and a through-hole conductor disposed on the carrier substrate, the thermal expansion coefficient of the carrier substrate being approximately equal to that of a multi-layer substrate, with which the substrate is connected by soldering with the terminals.

摘要翻译： 根据倒装芯片连接方法形成的半导体树脂封装结构，并且允许冷却半导体芯片的背面，该半导体芯片包括半导体芯片和载体基板，该半导体芯片和载体基板在其一个表面上焊接到根据倒装芯片的半导体芯片的电极 连接方法中，半导体芯片和载体基板之间的间隙充满了热膨胀系数的树脂，其热膨胀系数近似等于使用的焊料的热膨胀系数，所述半导体芯片的电极与所述半导体芯片的另一表面上的端子电连接 通过焊接部分的载体衬底和布置在载体衬底上的通孔导体，载体衬底的热膨胀系数近似等于多层衬底的热膨胀系数，衬底通过与端子焊接而与其连接。

公开(公告)号：US4543573A

公开(公告)日：1985-09-24

申请号：US363458

申请日：1982-03-30

申请人： Moriaki Fuyama ,  Katsumi Tamura ,  Makoto Morijiri ,  Mamoru Sawahata ,  Hiroaki Hachino

发明人： Moriaki Fuyama ,  Katsumi Tamura ,  Makoto Morijiri ,  Mamoru Sawahata ,  Hiroaki Hachino

IPC分类号： G09F9/30 ,  B23K35/00 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1345 ,  H01L31/18 ,  H05K3/24 ,  G09G3/00

CPC分类号： B23K35/001 ,  G02F1/13439 ,  G02F1/1345 ,  H01L31/1884 ,  H05K3/24 ,  H01J2211/225 ,  H05K2201/0326 ,  Y02E10/50

摘要： A display panel includes a pair of substrates arranged face to face with each other with a predetermined gap therebetween, at least a pair of electrodes each provided on a corresponding one of facing surfaces of the substrates, and a display substance provided between the electrodes. A picture element is made up of a pair of facing portions of the electrodes and a portion of the display substance situated between the facing portions. At least one of the electrodes is made up of a multiplicity of picture element electrodes formed of a transparent conductive film and juxtaposed to each other and a contact metal member for substantially making an electrical connection of a plurality of ones of the picture element electrodes. The contact metal member is made up of a first layer made of chromium or a chromium alloy and a second layer formed on the first layer and made of nickel or gold.

摘要翻译： 显示面板包括彼此面对地布置的一对基板，其间设置有至少一对电极，每对电极设置在基板的相对应的一个相对表面上，以及设置在电极之间的显示物质。 图像元素由电极的一对相对部分和位于相对部分之间的显示物质的一部分组成。 电极中的至少一个由多个彼此并置的透明导电膜形成的像素电极和用于基本上形成多个像素电极的电连接的接触金属部件构成。 接触金属构件由由铬或铬合金制成的第一层和形成在第一层上并由镍或金制成的第二层构成。

公开(公告)号：US5956231A

公开(公告)日：1999-09-21

申请号：US539075

申请日：1995-10-04

申请人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

发明人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

IPC分类号： H01L23/049 ,  H01L23/495 ,  H01L25/065 ,  H02M7/00 ,  H05K7/02 ,  H05K7/04

CPC分类号： H01L23/49562 ,  H01L23/049 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/18 ,  H02M7/003 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/4943 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351

摘要： A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

摘要翻译： 一种半导体器件，其中多个半导体元件被结合到绝缘体衬底上的至少一个电极图案上，所述绝缘体衬底在主表面上形成多个电极图案，所述半导体元件的每个电极电连接到所述电极图案， 绝缘体基板的另一表面被结合到散热基底上，散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件，将绝缘体基板上的电极与电极电连接的端子 设置在切断部件外侧，散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的线膨胀系数的3倍，导热系数 大于100 W / mK，半音 电感元件布置在至少一个电极表面上，并且在至少两个区域中被绝缘体基底上的另一个电极表面分隔。

公开(公告)号：US06495924B2

公开(公告)日：2002-12-17

申请号：US09235384

申请日：1999-01-22

申请人： Hironori Kodama ,  Mitsuo Katou ,  Mamoru Sawahata

发明人： Hironori Kodama ,  Mitsuo Katou ,  Mamoru Sawahata

IPC分类号： H01L2974

CPC分类号： H01L24/72 ,  H01L2224/48091 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00

摘要： In accordance with a press contact type semiconductor device, a metallic body having macroscopic vacancies inside is arranged between a main electrode of the semiconductor device and a main electrode plate, or between an intermediate electrode plate arranged on a respective main plane of the semiconductor element and a main electrode plate.

摘要翻译： 根据压接型半导体器件，在半导体器件的主电极和主电极板之间或布置在半导体元件的相应主平面上的中间电极板之间布置有内部具有宏观空位的金属体，以及 主电极板。

公开(公告)号：US5423931A

公开(公告)日：1995-06-13

申请号：US109067

申请日：1993-08-19

申请人： Hirokazu Inoue ,  Masahiro Takasaka ,  Koichi Watanabe ,  Takashi Hosokawa ,  Mamoru Sawahata

发明人： Hirokazu Inoue ,  Masahiro Takasaka ,  Koichi Watanabe ,  Takashi Hosokawa ,  Mamoru Sawahata

IPC分类号： H01L21/52 ,  H01L21/58 ,  H01L21/60 ,  H05K3/22 ,  H05K13/04 ,  B32B35/00

CPC分类号： H01L24/98 ,  B23K26/402 ,  H01L24/799 ,  H05K13/0486 ,  B23K2203/42 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/45144 ,  H01L2224/83192 ,  H01L2224/8385 ,  H01L24/83 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01054 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/19043 ,  H05K3/225 ,  Y10S156/922 ,  Y10T156/11 ,  Y10T29/49721 ,  Y10T29/53274

摘要： In a method of removing a component from a wiring board to which the component is attached by heat-softenable resin, the improvement is provided of, after softening of the resin by heat and removal of the component, removing residual resin remaining on the board at the location of the component by application of ultraviolet laser radiation having an intensity sufficient to decompose and disperse said residual resin. This can be done without damaging the wiring on the board so that the wiring is re-usable to attach a further electronic component at the same location. Excessive heating of the board can be avoided by measures such as applying a pre-load to the component during softening so that it moves when sufficiently softened, and monitoring the softening.

摘要翻译： 在通过可热软化树脂从组件附着的布线板除去组分的方法中，通过加热和除去组分使树脂软化之后，除去残留在板上的剩余树脂， 通过施加具有足以分解和分散所述残留树脂的强度的紫外线激光辐射的部件的位置。 这可以在不损坏电路板上的布线的情况下完成，使得布线可再利用以将另外的电子部件附接在同一位置。 可以通过诸如在软化期间对组分施加预加载以使其在充分软化时移动并监测软化的措施来避免板的过度加热。

公开(公告)号：US06686658B2

公开(公告)日：2004-02-03

申请号：US10231271

申请日：2002-08-30

申请人： Hironori Kodama ,  Mitsuo Katou ,  Mamoru Sawahata

发明人： Hironori Kodama ,  Mitsuo Katou ,  Mamoru Sawahata

IPC分类号： H01L2974

CPC分类号： H01L24/72 ,  H01L2224/48091 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00

摘要： In accordance with a press contact type semiconductor device, a metallic body having macroscopic vacancies inside is arranged between a main electrode of the semiconductor device and a main electrode plate, or between an intermediate electrode plate arranged on a respective main plane of the semiconductor element and a main electrode plate.

摘要翻译： 根据压接型半导体器件，在半导体器件的主电极和主电极板之间或布置在半导体元件的相应主平面上的中间电极板之间布置有内部具有宏观空位的金属体，以及 主电极板。

公开(公告)号：US07141741B2

公开(公告)日：2006-11-28

申请号：US10665523

申请日：2003-09-22

申请人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

发明人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

IPC分类号： H05K1/03

CPC分类号： H01L23/49562 ,  H01L23/049 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H02M7/003 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device in which electrodes of a plurality of semiconductor elements are bonded onto at least one of a plurality of electrode patterns on an insulator substrate, the other surface of the insulator substrate being bonded to a heat dissipating base. The upper surface of the heat dissipating base is covered with a member for cutting off the semiconductor elements from the outer environment. Terminals electrically connect the electrodes on said insulator substrate and the electrode placed outside the cutoff member. The material of the heat dissipating base has a linear expanding coefficient larger than that of the semiconductor element and smaller than three times that of the semiconductor element, and a thermal conductivity larger than 100 W/mK. The semiconductor elements are arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

摘要翻译： 一种半导体器件，其中多个半导体元件的电极被结合到绝缘体基板上的多个电极图案中的至少一个上，绝缘体基板的另一个表面被结合到散热基底。 散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件。 端子电连接所述绝缘体基板上的电极和放置在切断构件外部的电极。 散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的三倍，热导率大于100W / mK。 半导体元件布置在绝缘体基板上的至少一个电极表面和由另一个电极表面划分的至少两个区域中。

公开(公告)号：US06434008B1

公开(公告)日：2002-08-13

申请号：US09385632

申请日：1998-08-27

申请人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

发明人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

IPC分类号： H05K702

CPC分类号： H01L23/49562 ,  H01L23/049 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H02M7/003 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

摘要翻译： 一种半导体器件，其中多个半导体元件被结合到绝缘体衬底上的至少一个电极图案上，所述绝缘体衬底在主表面上形成多个电极图案，所述半导体元件的每个电极电连接到所述电极图案， 绝缘体基板的另一表面被结合到散热基底上，散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件，将绝缘体基板上的电极与电极电连接的端子 设置在切断部件外侧，散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的线膨胀系数的3倍，导热系数 大于100 W / mK，半音 电感元件布置在至少一个电极表面上，并且在至少两个区域中被绝缘体基底上的另一个电极表面分隔。