公开(公告)号：US4556899A

公开(公告)日：1985-12-03

申请号：US386071

申请日：1982-06-07

申请人： Yasutoshi Kurihara ,  Yoshihiro Suzuki ,  Michio Ooue ,  Hiroaki Hachino ,  Mitsuo Yanagi

发明人： Yasutoshi Kurihara ,  Yoshihiro Suzuki ,  Michio Ooue ,  Hiroaki Hachino ,  Mitsuo Yanagi

IPC分类号： H05K1/05 ,  H01L21/52 ,  H01L21/58 ,  H01L23/14 ,  H01L23/40 ,  H01L23/538 ,  H01L23/36 ,  H01L23/54

CPC分类号： H01L23/142 ,  H01L23/538 ,  H01L2224/48091 ,  H01L2224/48227 ,  H05K1/053

摘要： In an insulated type semiconductor device, a metal member is disposed between an insulating member and a circuit element which includes a semiconductor substrate. The metal member is a composite metal member having at least two different kinds of metal layers bonded to each other. In a preferred embodiment, in order to reduce undesirable effects caused by differences in the thermal coefficients .alpha..sub.I and .alpha..sub.S of the insulating member and the semiconductor substrate, respectively, the thermal expansion coefficient of said composite metal member as a whole .alpha..sub.M is adjusted in a range between .alpha..sub.I and .alpha..sub.S.

摘要翻译： 在绝缘型半导体器件中，金属构件设置在绝缘构件和包括半导体衬底的电路元件之间。 金属构件是具有彼此结合的至少两种不同种类的金属层的复合金属构件。 在优选实施例中，为了减少由绝缘构件和半导体衬底的热系数α1和αS的差异引起的不期望的影响，调整整个αM的复合金属构件的热膨胀系数 在αI和αS之间的范围内。

公开(公告)号：US4649990A

公开(公告)日：1987-03-17

申请号：US730642

申请日：1985-05-06

申请人： Yasutoshi Kurihara ,  Tasao Soga ,  Hiroaki Hachino ,  Kenji Miyata ,  Masahiro Okamura ,  Fumiyuki Kobayashi ,  Takahiro Daikoku

发明人： Yasutoshi Kurihara ,  Tasao Soga ,  Hiroaki Hachino ,  Kenji Miyata ,  Masahiro Okamura ,  Fumiyuki Kobayashi ,  Takahiro Daikoku

IPC分类号： H01L23/373 ,  H01L23/433 ,  F28F7/00

CPC分类号： H01L23/3731 ,  H01L23/4338 ,  H01L2224/16225

摘要： A heat-conducting cooling module for cooling a semiconductor substrate in an integrated circuit package assembly in which a semiconductor substrate is mounted on a base board by small solder pellets, and which contains a single substrate or laminated substrates. A heat-conducting relay member is provided between the semiconductor substrate and a housing so as to be pressed onto the semiconductor substrate. At least either one of the housing or the heat-conducting relay member is made of a sintered product which includes silicon carbide as a chief component.

摘要翻译： 一种用于冷却集成电路封装组件中的半导体衬底的导热冷却模块，其中通过小的焊料颗粒将半导体衬底安装在基板上，并且其包含单个衬底或层压衬底。 导热继电器件设置在半导体衬底和壳体之间，以便被压在半导体衬底上。 壳体或导热继电器构件中的至少一个由包括碳化硅作为主要成分的烧结产品制成。

公开(公告)号：US4352120A

公开(公告)日：1982-09-28

申请号：US142778

申请日：1980-04-22

申请人： Yasutoshi Kurihara ,  Hiroaki Hachino ,  Kousuke Nakamura

发明人： Yasutoshi Kurihara ,  Hiroaki Hachino ,  Kousuke Nakamura

IPC分类号： H01L21/52 ,  H01L21/58 ,  H01L23/08 ,  H01L23/15 ,  H01L23/373 ,  H01L23/492 ,  H01L23/02 ,  H01L23/48 ,  H01L29/44

CPC分类号： H01L24/83 ,  H01L23/15 ,  H01L23/3731 ,  H01L23/4924 ,  H01L23/4926 ,  H01L24/26 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/4823 ,  H01L2224/48463 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/16152 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/351

摘要： In a semiconductor device, an active element is mounted on a supporter made of silicon carbide SiC. Since the thermal expansion coefficient of SiC is nearly equal to that of the semiconductor element, the integration of the element and the supporter will not give rise to thermal stresses in the element. Since silicon carbide has high degrees of thermal dissipation and conduction, the supporter of SiC can effectively dissipate heat generated in the semiconductor element. And since SiC has a high electrical conductivity and a high mechanical strength and is also light, it can be used as electrodes for the semiconductor element.

摘要翻译： 在半导体器件中，有源元件安装在由碳化硅SiC制成的支撑体上。 由于SiC的热膨胀系数几乎等于半导体元件的热膨胀系数，所以元件和支撑件的集成不会在元件中产生热应力。 由于碳化硅具有高度的散热和传导度，所以SiC的支撑体可以有效地散发半导体元件中产生的热量。 并且由于SiC具有高导电性和高机械强度并且也是轻的，所以它可以用作半导体元件的电极。

公开(公告)号：US20050029666A1

公开(公告)日：2005-02-10

申请号：US10487990

申请日：2002-08-27

申请人： Yasutoshi Kurihara ,  Yoshimasa Takahashi ,  Tsuneo Endoh ,  Mikio Negishi ,  Masashi Yamaura ,  Hirokazu Nakajima ,  Yosuke Sakurai ,  Hironori Kodama

发明人： Yasutoshi Kurihara ,  Yoshimasa Takahashi ,  Tsuneo Endoh ,  Mikio Negishi ,  Masashi Yamaura ,  Hirokazu Nakajima ,  Yosuke Sakurai ,  Hironori Kodama

IPC分类号： B23K35/02 ,  B23K35/26 ,  H01L21/56 ,  H01L21/60 ,  H01L23/31 ,  H01L23/367 ,  H01L23/495 ,  H01L23/498 ,  H01L23/552 ,  H01L23/64 ,  H05K3/28 ,  H05K3/34 ,  H01L23/48

CPC分类号： H01L24/85 ,  B23K35/0244 ,  B23K35/262 ,  C04B37/026 ,  C04B2237/12 ,  C04B2237/123 ,  C04B2237/124 ,  C04B2237/125 ,  C04B2237/126 ,  C04B2237/127 ,  C04B2237/368 ,  C04B2237/401 ,  C04B2237/407 ,  C04B2237/708 ,  C04B2237/72 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/3677 ,  H01L23/49575 ,  H01L23/49805 ,  H01L23/552 ,  H01L23/642 ,  H01L24/01 ,  H01L24/13 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/133 ,  H01L2224/13339 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/29209 ,  H01L2224/29211 ,  H01L2224/29213 ,  H01L2224/29218 ,  H01L2224/29223 ,  H01L2224/29239 ,  H01L2224/29244 ,  H01L2224/29247 ,  H01L2224/29249 ,  H01L2224/29255 ,  H01L2224/29264 ,  H01L2224/29266 ,  H01L2224/2927 ,  H01L2224/29272 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2224/85 ,  H01L2224/85203 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/35121 ,  H05K3/284 ,  H05K3/3442 ,  H05K3/3484 ,  H05K2201/0215 ,  H05K2201/10636 ,  Y02P70/611 ,  Y02P70/613 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2224/83 ,  H01L2224/92247 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01029

摘要： A semiconductor device, in which a solder layer bonding chip parts and wiring members are enclosed with the resin layer, and the solder layer is comprised of a compound body in which metal powder is distributed in the matrix metal, is disclosed. When a semiconductor device in which the chip parts are installed in the wiring member with the solders, the soldering part is sealed with the resin is mounted secondly on the external wiring member, the outflow of the solders and the short circuit due to the outflow, the disconnections, and the displacement of the chip parts can be prevented.

摘要翻译： 公开了一种半导体器件，其中将粘合芯片部件和布线部件的焊料层封装在树脂层中，并且焊料层由金属粉末分布在基体金属中的复合体构成。 当将其中芯片部件与焊料一起安装在布线部件中的半导体器件时，将树脂密封的焊接部件二次安装在外部布线部件上，由于流出而导致焊料的流出和短路， 可以防止切断部件和芯片部件的位移。

公开(公告)号：US06353258B1

公开(公告)日：2002-03-05

申请号：US09603966

申请日：2000-06-26

申请人： Hirokazu Inoue ,  Ryuichi Saito ,  Mutsuhiro Mori ,  Yasutoshi Kurihara ,  Jin Onuki ,  Shin Kimura ,  Satoshi Shimada ,  Kazuhiro Suzuki ,  Yukio Kamita ,  Isao Kobayashi ,  Kazuji Yamada ,  Naohiro Momma

发明人： Hirokazu Inoue ,  Ryuichi Saito ,  Mutsuhiro Mori ,  Yasutoshi Kurihara ,  Jin Onuki ,  Shin Kimura ,  Satoshi Shimada ,  Kazuhiro Suzuki ,  Yukio Kamita ,  Isao Kobayashi ,  Kazuji Yamada ,  Naohiro Momma

IPC分类号： H01L2334

CPC分类号： H01L23/5386 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/48747 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/85447 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/16151 ,  H01L2924/16315 ,  H01L2924/181 ,  H01L2924/2076 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor module has a plurality of power semiconductor devices mounted on a substrate, and a metal foil for wiring is mounted on the substrate so that an asymmetric unit arrangement of the semiconductor devices is formed. In the device, all of the units are arranged in the same direction on the substrate, and all of the units are electrically connected with electrode terminal feet, and the electrode terminal feet are electrically connected with linkage terminal foot. The electrode terminal feet are disposed with a certain interval.

摘要翻译： 半导体模块具有安装在基板上的多个功率半导体器件，并且用于布线的金属箔安装在基板上，从而形成半导体器件的不对称单元布置。 在该装置中，所有单元在基板上沿相同的方向排列，并且所有单元与电极端子脚电连接，并且电极端子脚与联动端子脚电连接。 电极端子脚以一定间隔设置。

公开(公告)号：US5956231A

公开(公告)日：1999-09-21

申请号：US539075

申请日：1995-10-04

申请人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

发明人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

IPC分类号： H01L23/049 ,  H01L23/495 ,  H01L25/065 ,  H02M7/00 ,  H05K7/02 ,  H05K7/04

CPC分类号： H01L23/49562 ,  H01L23/049 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/18 ,  H02M7/003 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/4943 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351

摘要： A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

摘要翻译： 一种半导体器件，其中多个半导体元件被结合到绝缘体衬底上的至少一个电极图案上，所述绝缘体衬底在主表面上形成多个电极图案，所述半导体元件的每个电极电连接到所述电极图案， 绝缘体基板的另一表面被结合到散热基底上，散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件，将绝缘体基板上的电极与电极电连接的端子 设置在切断部件外侧，散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的线膨胀系数的3倍，导热系数 大于100 W / mK，半音 电感元件布置在至少一个电极表面上，并且在至少两个区域中被绝缘体基底上的另一个电极表面分隔。

公开(公告)号：US4058821A

公开(公告)日：1977-11-15

申请号：US668404

申请日：1976-03-19

申请人： Tadahiko Miyoshi ,  Yasutoshi Kurihara ,  Tatsuya Kamei ,  Takuzo Ogawa

发明人： Tadahiko Miyoshi ,  Yasutoshi Kurihara ,  Tatsuya Kamei ,  Takuzo Ogawa

IPC分类号： H01L31/12 ,  H01L31/0232 ,  H01L31/167

CPC分类号： H01L31/0232 ,  H01L31/167

摘要： A photo-coupler semiconductor device includes a semiconductor light emitter and a semiconductor light detector coupled optically with each other through an optical guide. A portion of the optical guide close to the semiconductor light detector is made of glass. The glass portion of the optical guide is brought into intimate contact with a glass layer which is formed on a light sensitive region of the semiconductor light detector. The intimate contact is made by melting the glass portion on the glass layer.

摘要翻译： 光耦合器半导体器件包括半导体光发射器和通过光导相互光耦合的半导体光检测器。 靠近半导体光检测器的光导体的一部分由玻璃制成。 光导体的玻璃部分与形成在半导体光检测器的光敏区域上的玻璃层紧密接触。 通过熔化玻璃层上的玻璃部分来进行紧密接触。

公开(公告)号：US07141741B2

公开(公告)日：2006-11-28

申请号：US10665523

申请日：2003-09-22

申请人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

发明人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

IPC分类号： H05K1/03

CPC分类号： H01L23/49562 ,  H01L23/049 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H02M7/003 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device in which electrodes of a plurality of semiconductor elements are bonded onto at least one of a plurality of electrode patterns on an insulator substrate, the other surface of the insulator substrate being bonded to a heat dissipating base. The upper surface of the heat dissipating base is covered with a member for cutting off the semiconductor elements from the outer environment. Terminals electrically connect the electrodes on said insulator substrate and the electrode placed outside the cutoff member. The material of the heat dissipating base has a linear expanding coefficient larger than that of the semiconductor element and smaller than three times that of the semiconductor element, and a thermal conductivity larger than 100 W/mK. The semiconductor elements are arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

摘要翻译： 一种半导体器件，其中多个半导体元件的电极被结合到绝缘体基板上的多个电极图案中的至少一个上，绝缘体基板的另一个表面被结合到散热基底。 散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件。 端子电连接所述绝缘体基板上的电极和放置在切断构件外部的电极。 散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的三倍，热导率大于100W / mK。 半导体元件布置在绝缘体基板上的至少一个电极表面和由另一个电极表面划分的至少两个区域中。

公开(公告)号：US06434008B1

公开(公告)日：2002-08-13

申请号：US09385632

申请日：1998-08-27

申请人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

发明人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

IPC分类号： H05K702

CPC分类号： H01L23/49562 ,  H01L23/049 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H02M7/003 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

摘要翻译： 一种半导体器件，其中多个半导体元件被结合到绝缘体衬底上的至少一个电极图案上，所述绝缘体衬底在主表面上形成多个电极图案，所述半导体元件的每个电极电连接到所述电极图案， 绝缘体基板的另一表面被结合到散热基底上，散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件，将绝缘体基板上的电极与电极电连接的端子 设置在切断部件外侧，散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的线膨胀系数的3倍，导热系数 大于100 W / mK，半音 电感元件布置在至少一个电极表面上，并且在至少两个区域中被绝缘体基底上的另一个电极表面分隔。

公开(公告)号：US4151502A

公开(公告)日：1979-04-24

申请号：US787841

申请日：1977-04-15

申请人： Yasutoshi Kurihara ,  Tetuo Kosugi ,  Teruyuki Kagami ,  Satoshi Shimada ,  Yasumasa Matsuda ,  Kazuji Yamada

发明人： Yasutoshi Kurihara ,  Tetuo Kosugi ,  Teruyuki Kagami ,  Satoshi Shimada ,  Yasumasa Matsuda ,  Kazuji Yamada

IPC分类号： G01B7/16 ,  G01L1/22 ,  G01L9/00 ,  H01L29/84 ,  G01B11/16

CPC分类号： G01L1/2293 ,  G01L9/0002 ,  H01L29/84 ,  Y10S73/04 ,  Y10T29/49103

摘要： A semiconductor transducer comprises a semiconductor strain gauge composed of a mono-crystalline semiconducting material and a strain sensing region formed in a first main surface of the mono-crystalline semiconducting material, and a strain measuring member coupled to the semiconductor strain gauge through an alloy material. An electrical insulating layer is attached to a second main surface of the mono-crystalline semiconducting material which is coupled to the strain measuring member through the alloy material. The insulating layer is extended to a side surface of the mono-crystalline semiconducting material thereby to cover the same side.

摘要翻译： 半导体换能器包括由单晶半导体材料构成的半导体应变计和形成在单晶半导体材料的第一主表面中的应变感测区域，以及通过合金材料耦合到半导体应变计的应变测量构件 。 电绝缘层连接到单晶半导体材料的第二主表面，该第二主表面通过合金材料耦合到应变测量部件。 绝缘层延伸到单晶半导体材料的侧表面，从而覆盖同一侧。