公开(公告)号：US20100190312A1

公开(公告)日：2010-07-29

申请号：US12753194

申请日：2010-04-02

申请人： Naoto Kusumoto ,  Nobuharu Ohsawa ,  Mikio Yukawa ,  Yoshitaka Dozen

发明人： Naoto Kusumoto ,  Nobuharu Ohsawa ,  Mikio Yukawa ,  Yoshitaka Dozen

IPC分类号： H01L21/02

CPC分类号： H01L27/1266 ,  B82Y10/00 ,  G02F2001/13613 ,  G11C13/00 ,  G11C13/0014 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/1214 ,  H01L27/281 ,  H01L29/458 ,  H01L51/003 ,  H01L2251/558

摘要： To provide a semiconductor device which is higher functional and reliable and a technique capable of manufacturing the semiconductor device with a high yield at low cost without complexing the apparatus or process. At least one of a first conductive layer and a second conductive layer is formed containing one kind or plural kinds of indium, tin, lead, bismuth, calcium, manganese, or zinc; or oxidation treatment is performed at least one of interfaces between an organic compound layer and the first conductive layer and between the organic compound layer and the second conductive layer. The first conductive layer, the organic compound layer, and the second conductive layer which are formed over a first substrate with a peeling layer interposed therebetween can be peeled from the first substrate with the peeling layer, and transposed to a second substrate.

摘要翻译： 提供功能可靠性更高的半导体器件和能够以低成本高成品率地制造半导体器件而不使器件或工艺复杂化的技术。 形成含有一种或多种铟，锡，铅，铋，钙，锰或锌的至少一种第一导电层和第二导电层; 或氧化处理进行有机化合物层和第一导电层之间以及有机化合物层和第二导电层之间的界面中的至少一个。 在第一衬底上形成有剥离层的第一导电层，有机化合物层和第二导电层可以用剥离层从第一衬底剥离，并且转置到第二衬底。

公开(公告)号：US20070105285A1

公开(公告)日：2007-05-10

申请号：US11593651

申请日：2006-11-07

申请人： Naoto Kusumoto ,  Nobuharu Ohsawa ,  Mikio Yukawa ,  Yoshitaka Dozen

发明人： Naoto Kusumoto ,  Nobuharu Ohsawa ,  Mikio Yukawa ,  Yoshitaka Dozen

IPC分类号： H01L21/84

CPC分类号： H01L27/1266 ,  B82Y10/00 ,  G02F2001/13613 ,  G11C13/00 ,  G11C13/0014 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/1214 ,  H01L27/281 ,  H01L29/458 ,  H01L51/003 ,  H01L2251/558

摘要： To provide a semiconductor device which is higher functional and reliable and a technique capable of manufacturing the semiconductor device with a high yield at low cost without complexing the apparatus or process. At least one of a first conductive layer and a second conductive layer is formed containing one kind or plural kinds of indium, tin, lead, bismuth, calcium, manganese, or zinc; or oxidation treatment is performed at least one of interfaces between an organic compound layer and the first conductive layer and between the organic compound layer and the second conductive layer. The first conductive layer, the organic compound layer, and the second conductive layer which are formed over a first substrate with a peeling layer interposed therebetween can be peeled from the first substrate with the peeling layer, and transposed to a second substrate.

摘要翻译： 提供功能可靠性更高的半导体器件和能够以低成本高成品率地制造半导体器件而不使器件或工艺复杂化的技术。 形成含有一种或多种铟，锡，铅，铋，钙，锰或锌的至少一种第一导电层和第二导电层; 或氧化处理进行有机化合物层和第一导电层之间以及有机化合物层和第二导电层之间的界面中的至少一个。 在第一衬底上形成有剥离层的第一导电层，有机化合物层和第二导电层可以用剥离层从第一衬底剥离，并且转置到第二衬底。

公开(公告)号：US08088654B2

公开(公告)日：2012-01-03

申请号：US12753194

申请日：2010-04-02

申请人： Naoto Kusumoto ,  Nobuharu Ohsawa ,  Mikio Yukawa ,  Yoshitaka Dozen

发明人： Naoto Kusumoto ,  Nobuharu Ohsawa ,  Mikio Yukawa ,  Yoshitaka Dozen

IPC分类号： H01L21/00

CPC分类号： H01L27/1266 ,  B82Y10/00 ,  G02F2001/13613 ,  G11C13/00 ,  G11C13/0014 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/1214 ,  H01L27/281 ,  H01L29/458 ,  H01L51/003 ,  H01L2251/558

摘要： To provide a semiconductor device which is higher functional and reliable and a technique capable of manufacturing the semiconductor device with a high yield at low cost without complexing the apparatus or process. At least one of a first conductive layer and a second conductive layer is formed containing one kind or plural kinds of indium, tin, lead, bismuth, calcium, manganese, or zinc; or oxidation treatment is performed at least one of interfaces between an organic compound layer and the first conductive layer and between the organic compound layer and the second conductive layer. The first conductive layer, the organic compound layer, and the second conductive layer which are formed over a first substrate with a peeling layer interposed therebetween can be peeled from the first substrate with the peeling layer, and transposed to a second substrate.

摘要翻译： 提供功能可靠性更高的半导体器件和能够以低成本高成品率地制造半导体器件而不使器件或工艺复杂化的技术。 形成含有一种或多种铟，锡，铅，铋，钙，锰或锌的至少一种第一导电层和第二导电层; 或氧化处理进行有机化合物层和第一导电层之间以及有机化合物层和第二导电层之间的界面中的至少一个。 在第一衬底上形成有剥离层的第一导电层，有机化合物层和第二导电层可以用剥离层从第一衬底剥离，并且转置到第二衬底。

公开(公告)号：US07713800B2

公开(公告)日：2010-05-11

申请号：US11593651

申请日：2006-11-07

申请人： Naoto Kusumoto ,  Nobuharu Ohsawa ,  Mikio Yukawa ,  Yoshitaka Dozen

发明人： Naoto Kusumoto ,  Nobuharu Ohsawa ,  Mikio Yukawa ,  Yoshitaka Dozen

IPC分类号： H01L21/00

CPC分类号： H01L27/1266 ,  B82Y10/00 ,  G02F2001/13613 ,  G11C13/00 ,  G11C13/0014 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/1214 ,  H01L27/281 ,  H01L29/458 ,  H01L51/003 ,  H01L2251/558

摘要： To provide a semiconductor device which is higher functional and reliable and a technique capable of manufacturing the semiconductor device with a high yield at low cost without complexing the apparatus or process. At least one of a first conductive layer and a second conductive layer is formed containing one kind or plural kinds of indium, tin, lead, bismuth, calcium, manganese, or zinc; or oxidation treatment is performed at least one of interfaces between an organic compound layer and the first conductive layer and between the organic compound layer and the second conductive layer. The first conductive layer, the organic compound layer, and the second conductive layer which are formed over a first substrate with a peeling layer interposed therebetween can be peeled from the first substrate with the peeling layer, and transposed to a second substrate.

摘要翻译： 提供功能可靠性更高的半导体器件和能够以低成本高成品率地制造半导体器件而不使器件或工艺复杂化的技术。 形成含有一种或多种铟，锡，铅，铋，钙，锰或锌的至少一种第一导电层和第二导电层; 或氧化处理进行有机化合物层和第一导电层之间以及有机化合物层和第二导电层之间的界面中的至少一个。 在第一衬底上形成有剥离层的第一导电层，有机化合物层和第二导电层可以用剥离层从第一衬底剥离，并且转置到第二衬底。

公开(公告)号：US08865511B2

公开(公告)日：2014-10-21

申请号：US13295304

申请日：2011-11-14

申请人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Ryoji Nomura ,  Yoshinobu Asami

发明人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Ryoji Nomura ,  Yoshinobu Asami

IPC分类号： H01L35/24 ,  H01L51/00 ,  H01L27/28 ,  H01L51/05 ,  G11C13/00 ,  B82Y10/00

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/285 ,  H01L51/0591

摘要： It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semiconductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator.

摘要翻译： 本发明的一个目的是提供一种以高成本低成本制造高性能且高可靠性的存储器件和设置有存储器件的半导体器件的技术。 半导体器件包括在第一导电层上包括绝缘体的有机化合物层和包含绝缘体的有机化合物层上的第二导电层。 此外，半导体器件通过在第一导电层上形成第一导电层，排出绝缘体和有机化合物的组合物而形成包含绝缘体的有机化合物层，并在有机化合物层上形成第二导电层来制造 包括绝缘体。

公开(公告)号：US08399881B2

公开(公告)日：2013-03-19

申请号：US13103293

申请日：2011-05-09

申请人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Yoshinobu Asami

发明人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Yoshinobu Asami

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L27/1255 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/105 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/11286 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/13 ,  H01L27/285 ,  H01L51/0042 ,  H01L51/0051 ,  H01L51/0059 ,  H01L51/0081 ,  H01L51/0533

摘要： On object of the invention is to provide a nonvolatile memory device, in which data can be added to the memory device after a manufacturing process and forgery and the like by rewriting can be prevented, and a semiconductor device including the memory device. Another object of the invention is to provide a highly-reliable, inexpensive, and nonvolatile memory device and a semiconductor device including the memory device. A memory element includes a first conductive layer, a second conductive layer, a first insulating layer with a thickness of 0.1 nm or more and 4 nm or less being in contact with the first conductive layer, and an organic compound layer interposed between the first conductive layer, the first insulating layer, and the second conductive layer.

摘要翻译： 本发明的目的是提供一种非易失性存储器件，其中可以通过重写来制造处理和伪造等以及包括存储器件的半导体器件，可以将数据添加到存储器件。 本发明的另一个目的是提供一种高度可靠，便宜且非易失性的存储器件和包括存储器件的半导体器件。 存储元件包括第一导电层，第二导电层，与第一导电层接触的厚度为0.1nm以上且4nm以下的第一绝缘层，以及介于第一导电层之间的有机化合物层 层，第一绝缘层和第二导电层。

公开(公告)号：US08288197B2

公开(公告)日：2012-10-16

申请号：US11918960

申请日：2006-04-25

申请人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Yoshinobu Asami ,  Ikuko Kawamata ,  Shunpei Yamazaki

发明人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Yoshinobu Asami ,  Ikuko Kawamata ,  Shunpei Yamazaki

IPC分类号： H01L21/00 ,  H01L47/00 ,  H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L29/66

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/13 ,  H01L27/285

摘要： It is an object of the present invention to provide a technique in which a high-performance and highly reliable semiconductor device can be manufactured at low cost with high yield. A memory device according to the present invention has a first conductive layer including a plurality of insulators, an organic compound layer over the first conductive layer including the insulators, and a second conductive layer over the organic compound layer.

摘要翻译： 本发明的目的是提供一种以低成本，高产率地制造高性能和高可靠性的半导体器件的技术。 根据本发明的存储器件具有包括多个绝缘体的第一导电层，包括绝缘体的第一导电层上的有机化合物层，以及有机化合物层上的第二导电层。

公开(公告)号：US07611965B2

公开(公告)日：2009-11-03

申请号：US11510420

申请日：2006-08-25

申请人： Tsunenori Suzuki ,  Ryoji Nomura ,  Mikio Yukawa ,  Nobuharu Ohsawa ,  Tamae Takano ,  Yoshinobu Asami ,  Takehisa Sato

发明人： Tsunenori Suzuki ,  Ryoji Nomura ,  Mikio Yukawa ,  Nobuharu Ohsawa ,  Tamae Takano ,  Yoshinobu Asami ,  Takehisa Sato

IPC分类号： H01L21/30

CPC分类号： H01L27/12 ,  H01L27/1244 ,  H01L27/1266 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/78603

摘要： It is an object of the present invention to manufacture, with high yield, semiconductor devices in each of which an element which has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming an element-forming layer by forming an inorganic compound layer, a first conductive layer, and a layer containing an organic compound over the separation layer, and forming a second conductive layer which is in contact with the layer containing an organic compound and the inorganic compound layer; and after attaching a first flexible substrate over the second conductive layer, separating the separation layer and the element-forming layer at the separation layer.

摘要翻译： 本发明的一个目的是以高产率制造其中每个具有含有有机化合物的层的元件设置在柔性基底上的半导体器件。 一种制造半导体器件的方法包括：在衬底上形成分离层; 通过在分离层上形成无机化合物层，第一导电层和含有有机化合物的层来形成元件形成层，以及形成与含有有机化合物和无机物的层接触的第二导电层 复合层; 并且在第二导电层上安装第一柔性基板之后，在分离层处分离分离层和元件形成层。

公开(公告)号：US20090065769A1

公开(公告)日：2009-03-12

申请号：US11918611

申请日：2006-04-25

申请人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Ryoji Nomura ,  Yoshinobu Asami

发明人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Ryoji Nomura ,  Yoshinobu Asami

IPC分类号： H01L51/00 ,  H01L51/40

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/285 ,  H01L51/0591

摘要： It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semi-conductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator.

摘要翻译： 本发明的目的是提供一种以低成本，高成品率地制造设置有存储装置的高性能且高可靠性的存储装置和半导体装置的技术。 半导体器件包括在第一导电层上包括绝缘体的有机化合物层和包含绝缘体的有机化合物层上的第二导电层。 此外，半导体器件通过在第一导电层上形成第一导电层，排出绝缘体和有机化合物的组合物而形成包含绝缘体的有机化合物层，并在有机化合物层上形成第二导电层来制造 包括绝缘体。

公开(公告)号：US20080210932A1

公开(公告)日：2008-09-04

申请号：US11885970

申请日：2006-03-22

申请人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Yoshinobu Asami

发明人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Yoshinobu Asami

IPC分类号： H01L51/10

CPC分类号： H01L27/1255 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/105 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/11286 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/13 ,  H01L27/285 ,  H01L51/0042 ,  H01L51/0051 ,  H01L51/0059 ,  H01L51/0081 ,  H01L51/0533

摘要： On object of the invention is to provide a non-volatile memory device, in which data can be added to the memory device after a manufacturing process and forgery and the like by rewriting can be prevented, and a semiconductor device including the memory device. Another object of the invention is to provide a highly-reliable, inexpensive, and nonvolatile memory device and a semiconductor device including the memory device. A memory element includes a first conductive layer, a second conductive layer, a first insulating layer with a thickness of 0.1 nm or more and 4 nm or less being in contact with the first conductive layer, and an organic compound layer interposed between the first conductive layer, the first insulating layer, and the second conductive layer.

摘要翻译： 本发明的目的是提供一种非易失性存储器件，其中可以在制造过程之后将数据添加到存储器件，并且可以防止通过重写来防止伪造等，以及包括存储器件的半导体器件。 本发明的另一个目的是提供一种高度可靠，便宜且非易失性的存储器件和包括存储器件的半导体器件。 存储元件包括第一导电层，第二导电层，与第一导电层接触的厚度为0.1nm以上且4nm以下的第一绝缘层，以及介于第一导电层之间的有机化合物层 层，第一绝缘层和第二导电层。