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11 条记录 (耗时 0.025 秒)

    Metal embedded passivation layer structure for microelectronic interconnect formation, customization and repair
    9.
    发明授权
    Metal embedded passivation layer structure for microelectronic interconnect formation, customization and repair 失效
    金属嵌入式钝化层结构，用于微电子互连形成，定制和修复

    公开(公告)号：US06255671B1

    公开(公告)日：2001-07-03

    申请号：US09002840

    申请日：1998-01-05

    申请人： Nestor Alexander Bojarczuk, Jr. ,  Supratik Guha ,  Arunava Gupta ,  Sampath Purushothaman

    发明人： Nestor Alexander Bojarczuk, Jr. ,  Supratik Guha ,  Arunava Gupta ,  Sampath Purushothaman

    IPC分类号： H01L3300

    CPC分类号： H01L21/76894 ,  H01L21/76823 ,  H01L21/76838 ,  H01L23/5254 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A structure includes a metal nitride film of the form MN, where M is selected from the group consisting of Ga, In, AlGa, AlIn, and AlGaIn. The structure has at least one electrically conductive metal region that is formed within and from the metal nitride film by a thermal process driven by absorption of light having a predetermined wavelength. Single films comprised of AlN are also within the scope of this invention, wherein an Al trace or interconnect is formed by laser radiation of wavelength 248 nm so as to contact circuitry that exists under the film. Multilayered stacks of films are also within the scope of the teachings of this invention. In this case each film layer may be separately deposited and then illuminated to selectively form the desired electrical connection(s), which may also connect to conductive feature(s) in an underlying layer, or a plurality of metal nitride layers are stacked bottom to top in order of increasing electronic band gap energy value, and then the conductive features are written into selective ones of the layers by controlling the wavelength of the light to be absorbed in a desired layer. The teachings of this invention can be employed to fabricate fuses and anti-fuses enabling selective circuit customization, test and repair. Also disclosed is a technique for forming electrical resistors in a metal nitride layer by adjusting the electrical resistance of the metallization formed from the metal nitride film layer.

    摘要翻译： 结构包括形式为MN的金属氮化物膜，其中M选自Ga，In，AlGa，AlIn和AlGaIn。 该结构具有通过由具有预定波长的光吸收驱动的热处理而形成在金属氮化物膜内和从金属氮化物膜形成的至少一个导电金属区域。 由AlN组成的单个膜也在本发明的范围内，其中通过波长为248nm的激光辐射形成Al迹线或互连，以便接触存在于膜下面的电路。 多层薄膜也在本发明的教导的范围内。 在这种情况下，每个膜层可以被分开沉积，然后照亮以选择性地形成所需的电连接，其也可以连接到下层中的导电特征，或者多个金属氮化物层被堆叠到底部 顶部按照增加电子带隙能量值的顺序，然后通过控制要在所需层中吸收的光的波长将导电特征写入选择层中。 本发明的教导可用于制造保险丝和抗熔丝，从而能够进行选择性电路定制，测试和修理。 还公开了通过调整由金属氮化物膜层形成的金属化层的电阻来形成金属氮化物层中的电阻器的技术。

    Column III metal nitride films as phase change media for optical recording
    10.
    发明授权
    Column III metal nitride films as phase change media for optical recording 失效
    作为用于光学记录的相变介质的III族金属氮化物膜

    公开(公告)号：US5874147A

    公开(公告)日：1999-02-23

    申请号：US892826

    申请日：1997-07-15

    申请人： Nestor Alexander Bojarczuk, Jr. ,  Supratik Guha ,  Arunava Gupta ,  Wade Wai-Chung Tang

    发明人： Nestor Alexander Bojarczuk, Jr. ,  Supratik Guha ,  Arunava Gupta ,  Wade Wai-Chung Tang

    IPC分类号： B41M5/26 ,  G11B7/00 ,  G11B7/004 ,  G11B7/0045 ,  G11B7/005 ,  G11B7/24 ,  G11B7/243 ,  G11B7/253 ,  B32B3/00

    CPC分类号： G11B7/253 ,  G11B7/00455 ,  G11B7/0052 ,  G11B7/24 ,  G11B7/243 ,  G11B2007/2431 ,  G11B2007/24322 ,  Y10S428/913 ,  Y10S430/146 ,  Y10T428/21

    摘要： This invention provides phase change media for optical storage based on semiconductors of nitrides of the column III metals. The surface of thin films of these wide bandgap semiconductors may be metallized (by desorption of the nitrogen) by irradiating with photons of energy equal to, or greater than the band gap of these materials, and with power densities beyond a critical threshold value. As a consequence of such writable metallization, these materials are excellent candidates for write once, read many times storage media since the differences in the reflectivity between the metal and its corresponding wide gap nitride are very large. Furthermore, once the nitrogen is desorbed, the written metallic phase can no longer revert back to the nitride phase and hence the media is stable and is truly a write-once system. Additional advantages offered by these materials over present day phase change media include higher differences in reflectivity contrast and suitability for use with short wavelength laser diodes (460 nm and lower) which are expected to be introduced into optical recording technology in the next 5 years. The band gap of alloys of nitrides of column III metals can be tuned by changing the relative fractions of the column III metals to continuously vary the band gap so as to be compatible with lasers having photon energies within the range. The low absorptivity and hence high transmissitivity, at the appropriate recording wavelength, of the starting phase also offers the potential application of these materials in a multiple-recording-layer format.

    摘要翻译： 本发明提供了基于第三列金属的氮化物的半导体的用于光学存储的相变介质。 这些宽带隙半导体的薄膜的表面可以通过用等于或大于这些材料的带隙的能量的光子照射超过临界阈值的功率密度来金属化（通过解吸氮）。 作为这种可写入金属化的结果，由于金属与其相应的宽间隙氮化物之间的反射率的差异非常大，所以这些材料是写入一次的优异候选物，读取多次存储介质。 此外，一旦氮被解吸，写入的金属相不能再回到氮化物相，因此介质是稳定的，并且是真正的一次写入系统。 这些材料在现在的相变介质中提供的另外的优点包括在短波长激光二极管（460nm或更低）中使用的反射率对比度和适用性的较高差异，预期在未来5年内将其引入到光学记录技术中。 可以通过改变第III列金属的相对分数来连续改变带隙来调节第III列金属的氮化物的带隙，从而与具有该光子能量的激光器兼容。 起始阶段的适当记录波长下的低吸收率和高透射率也提供了这些材料在多层记录层格式中的潜在应用。