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公开(公告)号:US11560517B2
公开(公告)日:2023-01-24
申请号:US16922479
申请日:2020-07-07
发明人: Tomoyuki Sasaki , Hiroshi Ono , Nobuhiro Kawatsuki , Kohei Goto
IPC分类号: C09K19/38 , C09K19/32 , C09K19/06 , C09K19/20 , C09K19/14 , C09K19/30 , C09K19/12 , C09K19/44 , C09K19/04 , G03H1/02
摘要: A photoreactive liquid crystal composition containing (A) a photoreactive polymer liquid crystal which includes a photoreactive side chain in which at least one type of reaction selected from (A-1) photocrosslinking and (A-2) photoisomerization occurs, and (B) a low molecular weight liquid crystal. An optical element or display element is formed having a liquid crystal cell including the photoreactive liquid crystal composition.
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2.
公开(公告)号:US11542366B2
公开(公告)日:2023-01-03
申请号:US17070645
申请日:2020-10-14
发明人: Hiroto Ogata , Yuki Usui , Mamoru Tamura , Takahiro Kishioka
IPC分类号: C08G63/688 , G03F7/20 , G03F7/09 , H01L21/027 , C08G63/42 , C08G63/58 , G03F7/16
摘要: A method includes applying a composition for forming a resist underlayer film to a substrate having a recess in a surface, and baking the composition for forming a resist underlayer film to form a resist underlayer film for filling at least the recess. The composition for forming a resist underlayer film has a copolymer having a structural unit of following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent: wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group.
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公开(公告)号:US20220404707A1
公开(公告)日:2022-12-22
申请号:US17880761
申请日:2022-08-04
摘要: A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1): wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B1 and B2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B1 and B2 optionally form a ring with a carbon atom bonded to B1 and B.
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公开(公告)号:US20220328635A1
公开(公告)日:2022-10-13
申请号:US17851868
申请日:2022-06-28
发明人: Yoshiomi HIROI , Shinichi MAEDA
IPC分类号: H01L29/24 , H01L21/02 , H01L29/786 , C04B35/626 , C04B35/01 , C04B35/453
摘要: Methods for producing the amorphous metal oxide semiconductor layer where amorphous metal oxide semiconductor layer is formed by use of a precursor composition containing a metal salt, a primary amide, and a water-based solution. The methodology for producing the amorphous metal oxide semiconductor layer includes applying the precursor composition onto a substrate to form a precursor film, and firing the film at a temperature of 150° C. or higher and lower than 300° C.
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公开(公告)号:US11452688B2
公开(公告)日:2022-09-27
申请号:US16554015
申请日:2019-08-28
IPC分类号: A61K9/00 , A61K47/10 , A61K47/12 , A61K47/42 , A61K47/18 , A61K47/26 , A61Q19/00 , A61K9/06 , A61K38/28 , A61K31/728 , A61K8/02 , A61K8/34 , A61K8/36 , A61K8/60 , A61K8/64
摘要: A transdermally absorbable base material including: a lipid peptide compound including at least one of compound of Formula (1) below and the similar compounds or pharmaceutically usable salts thereof; a surfactant; a specific polyhydric alcohol; a fatty acid; and water, wherein R1 is a C9-23 aliphatic group; R2 is a hydrogen atom or a C1-4 alkyl group that optionally has a branched chain having a carbon atom number of 1 or 2; R3 is a —(CH2)n—X group; n is a number of 1 to 4; and X is amino group, guanidino group, —CONH2 group, or a 5-membered cyclic group optionally having 1 to 3 nitrogen atoms, a 6-membered cyclic group optionally having 1 to 3 nitrogen atoms, or a condensed heterocyclic group constituted by a 5-membered cyclic group and a 6-membered cyclic group which optionally have 1 to 3 nitrogen atoms.
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公开(公告)号:US11450445B2
公开(公告)日:2022-09-20
申请号:US16895704
申请日:2020-06-08
发明人: Koji Arimitsu , Makoto Wakabayashi
IPC分类号: G03F7/16 , G03F7/09 , G03F7/004 , G03F7/20 , G03F7/34 , H01B1/12 , H01B13/00 , H01L51/00 , C03C17/28 , H01B5/14
摘要: A method for manufacturing an electroconductive pattern 40, provided with: a lamination step for laminating an acid generation film 10 containing an acid proliferation agent and a photoacid generator on a polymer film 20 containing an electroconductive polymer formed on a substrate 21; a masking step for masking the top of the acid generation film 10; a light irradiation step for irradiating the laminate from the acid-generation-film 10 side; a doping step for doping the electroconductive polymer with an acid generated and proliferated in the acid generation film 10 by the light irradiation; and a releasing step for releasing the acid generation film 10 from the polymer film 20. This method makes it possible to provide an electroconductive film and a method for manufacturing an electroconductive pattern in which photoacid generation and acid proliferation effects are utilized.
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公开(公告)号:US20210401734A1
公开(公告)日:2021-12-30
申请号:US17469958
申请日:2021-09-09
IPC分类号: A61K9/00 , A61K47/10 , A61K47/12 , A61K47/42 , A61K9/06 , A61K8/02 , A61K8/34 , A61K8/36 , A61K8/60 , A61K8/64 , A61K47/26 , A61Q19/00
摘要: A transdermally absorbable base material including: a lipid peptide compound including at least one of compound of Formula (1) below and the similar compounds or pharmaceutically usable salts thereof; a surfactant; a specific polyhydric alcohol; a fatty acid; and water, wherein R1 is a C9-23 aliphatic group; R2 is a hydrogen atom or a C1-4 alkyl group that optionally has a branched chain having a carbon atom number of 1 or 2; R3 is a —(CH2)n—X group; n is a number of 1 to 4; and X is amino group, guanidino group, —CONH2 group, or a 5-membered cyclic group optionally having 1 to 3 nitrogen atoms, a 6-membered cyclic group optionally having 1 to 3 nitrogen atoms, or a condensed heterocyclic group constituted by a 5-membered cyclic group and a 6-membered cyclic group which optionally have 1 to 3 nitrogen atoms.
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8.
公开(公告)号:US11199777B2
公开(公告)日:2021-12-14
申请号:US15108350
申请日:2014-12-15
IPC分类号: G03F7/09 , G03F7/11 , G03F7/20 , C08G12/08 , C08G8/16 , H01L21/033 , C09D161/22 , G03F7/32 , H01L21/308
摘要: A resist underlayer film which has an excellent hard mask function and can form an excellent pattern shape. A resist underlayer film-forming composition to be used for a lithography process, including a novolac polymer obtained by reaction of an aldehyde compound and an aromatic compound having a secondary amino group. The novolac polymer contains a unit structure of Formula (1): A method for producing a semiconductor device, including the steps of: forming a resist underlayer film from the resist underlayer film-forming composition on a semiconductor substrate; forming a hard mask on the resist underlayer film; further forming a resist film on the hard mask; forming a resist pattern by irradiation with light or an electron beam and development; etching the hard mask by using the formed resist pattern; etching the resist underlayer film by using the patterned hard mask; and processing the semiconductor substrate by using the patterned underlayer film.
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公开(公告)号:US11194251B2
公开(公告)日:2021-12-07
申请号:US15303979
申请日:2015-05-11
IPC分类号: G03F7/09 , G03F7/26 , G03F7/11 , H01L21/033 , H01L21/027 , C08F20/36 , C08F20/58 , C09D133/14 , C09D133/26 , G03F7/20 , H01L21/308 , G03F7/16
摘要: A resist underlayer film-forming composition for lithography capable of being dry-etched during pattern transfer from the upper layer or during substrate processing and capable of being removed with an alkaline aqueous solution after the substrate processing. The composition includes a polymer (A) having an acrylamide structure or an acrylic acid ester structure; a polymer (B) having a blocked isocyanate structure; and a solvent (C). The polymer (A) is a polymer including a unit structure of Formula (1). The polymer (B) is a polymer including a unit structure of Formula (2). A method for manufacturing a semiconductor device includes steps for: forming a resist pattern; etching an inorganic hard mask layer with use of the resist pattern; etching a resist underlayer film with use of the pattered inorganic hard mask layer; and processing a semiconductor substrate with use of the pattered resist underlayer film.
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公开(公告)号:US11173420B2
公开(公告)日:2021-11-16
申请号:US15886294
申请日:2018-02-01
申请人: NISSAN CHEMICAL INDUSTRIES, LTD. , TOYOTA JIDOSHA KABUSHIKI KAISHA , TOYOTA BOSHOKU KABUSHIKI KAISHA
IPC分类号: B01D17/02 , C02F1/68 , B01D35/00 , B01J20/22 , B01J20/26 , C08L101/14 , B01J20/10 , B01J20/12 , C08L33/02
摘要: A water absorbing and releasing body that absorbs water in engine oil and releases water when the temperature of the engine oil is high in order to maintain the performance of the engine oil, automotive parts including the water absorbing and releasing body, and a method for producing the water absorbing and releasing body for engine oil.
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