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公开(公告)号：US11194251B2
公开(公告)日：2021-12-07
申请号：US15303979
申请日：2015-05-11
IPC分类号： G03F7/09 , G03F7/26 , G03F7/11 , H01L21/033 , H01L21/027 , C08F20/36 , C08F20/58 , C09D133/14 , C09D133/26 , G03F7/20 , H01L21/308 , G03F7/16
摘要： A resist underlayer film-forming composition for lithography capable of being dry-etched during pattern transfer from the upper layer or during substrate processing and capable of being removed with an alkaline aqueous solution after the substrate processing. The composition includes a polymer (A) having an acrylamide structure or an acrylic acid ester structure; a polymer (B) having a blocked isocyanate structure; and a solvent (C). The polymer (A) is a polymer including a unit structure of Formula (1). The polymer (B) is a polymer including a unit structure of Formula (2). A method for manufacturing a semiconductor device includes steps for: forming a resist pattern; etching an inorganic hard mask layer with use of the resist pattern; etching a resist underlayer film with use of the pattered inorganic hard mask layer; and processing a semiconductor substrate with use of the pattered resist underlayer film.
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公开(公告)号：US10795261B2
公开(公告)日：2020-10-06
申请号：US15774321
申请日：2016-11-08
发明人： Tokio Nishita , Rikimaru Sakamoto
摘要： An additive for a resist underlayer film-forming composition, including a copolymer having structural units of the following Formulae (1) to (3): wherein R1s are each independently a hydrogen atom or a methyl group, R2 is a C1-3 alkylene group, A is a protecting group, R3 is an organic group having 4 to 7-membered ring lactone skeleton, adamantane skeleton, tricyclodecane skeleton, or norbornane skeleton, and R4 is a linear, branched, or cyclic organic group having a carbon atom number of 1 to 12, wherein at least one hydrogen atom is substituted with a fluoro group and that optionally has at least one hydroxy group as a substituent. A resist underlayer film-forming composition for lithography including additive, a resin that is different from copolymer, organic acid, crosslinker, and solvent, wherein the copolymer's content is 3 parts by mass to 40 parts by mass relative to 100 parts by mass of the resin.
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公开(公告)号：US10133178B2
公开(公告)日：2018-11-20
申请号：US15512802
申请日：2015-09-18
IPC分类号： G03F7/40 , C08F212/12 , C09D5/00 , C09D7/00 , C09D183/04 , C09D201/00 , C09D7/20 , C08G8/04 , C08G77/14 , C09D125/16 , G03F7/039 , G03F7/09 , G03F7/11 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/38 , H01L21/02 , H01L21/027 , H01L21/311 , H01L21/033
摘要： There is provided a new coating liquid for resist pattern coating. A coating liquid for resist pattern coating comprising a component A that is a polymer including at least one hydroxy group or carboxy group; a component B that is a sulfonic acid of A-SO3H (where A is a linear or branched alkyl group or fluorinated alkyl group having a carbon atom number of 1 to 16, an aromatic group having at least one of the alkyl group or the fluorinated alkyl group as a substituent, or a C4-16 alicyclic group optionally having a substituent); and a component C that is an organic solvent capable of dissolving the polymer and including ether or ketone compound of R1—O—R2 and/or R1—C(═O)—R2 (where R1 is a linear, branched, or cyclic alkyl group or fluorinated alkyl group having a carbon atom number of 3 to 16; and R2 is a linear, branched, or cyclic alkyl group or fluorinated alkyl group having a carbon atom number of 1 to 16), a method of forming a resist pattern using the coating liquid, and a method for forming a reverse pattern using the coating liquid.
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4.发明授权公开(公告)号：US09910354B2
公开(公告)日：2018-03-06
申请号：US15305793
申请日：2015-04-14
IPC分类号： G03F7/11 , G03F7/20 , G03F7/26 , C09D179/08 , G03F7/004 , G03F7/16 , H01L21/308
CPC分类号： G03F7/11 , C08G73/0616 , C08G73/0633 , C08G73/0644 , C08G73/0655 , C09D179/04 , C09D179/08 , G03F7/0045 , G03F7/094 , G03F7/162 , G03F7/168 , G03F7/2004 , G03F7/2006 , G03F7/2037 , G03F7/26 , H01L21/3081 , H01L21/3086
摘要： A composition for forming a resist underlayer film which make possible to form a desired high-adhesion resist pattern. A resist underlayer film-forming composition for lithography containing a polymer having the following structure Formula (1) or (2) at a terminal of a polymer chain, crosslinker, compound promoting crosslinking reaction, and organic solvent. (wherein R1 is a C1-6 alkyl group optionally having a substituent, phenyl group, pyridyl group, halogeno group, or hydroxy group, R2 is a hydrogen atom, a C1-6 alkyl group, hydroxy group, halogeno group, or ester group of —C(═O)O—X wherein X is a C1-6 alkyl group optionally having a substituent, R3 is a hydrogen atom, a C1-6 alkyl group, hydroxy group, or halogeno group, R4 is a direct bond or divalent C1-8 organic group, R5 is a divalent C1-8 organic group, A is an aromatic ring or heteroaromatic ring, t is 0 or 1, and u is 1 or 2.)
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公开(公告)号：US09394231B2
公开(公告)日：2016-07-19
申请号：US14362851
申请日：2012-11-12
发明人： Tokio Nishita , Ryuta Mizuochi , Rikimaru Sakamoto , Tomohisa Yamada , Naoki Nakaie , Yuki Takayama
IPC分类号： H01B1/00 , C07C211/54 , G03F7/09 , H01B1/12 , C09D179/02 , C08L79/02 , C08G73/02 , G03F7/11 , G03F1/00
CPC分类号： C07C211/54 , C08G73/0266 , C08L79/02 , C09D179/02 , G03F1/00 , G03F7/093 , G03F7/11 , H01B1/128
摘要： A composition for forming an antistatic film, includes: an oligomer compound of Formula (1A): (where R1 is a hydrogen atom or a group of Formula (2), each of R2 and R3 is independently a hydrogen atom, a group of Formula (3), or a group of Formula (4), at least one of the plurality of Rs is a sulfo group, a and b are positive integers satisfying 2≦(a+b)≦6; and each of a plurality of xs is independently an integer from 0 to 4): (where n is an integer satisfying 1≦n
摘要翻译： 用于形成抗静电膜的组合物包括：式（1A）的低聚物化合物：其中R 1是氢原子或式（2）的基团，R 2和R 3各自独立地是氢原子，式 （3）或式（4）的基团，所述多个R s中的至少一个是磺基，a和b是满足2＆lt; nlE的正整数;（a + b）＆nlE; 6; xs独立地为0至4的整数）：（其中n是满足1＆nlE的整数; n <（a + b + 4）; a，b，多个Rs和x与式 ）;并且多个y中的每一个独立地为0至5的整数）; 和水。
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公开(公告)号：US10295907B2
公开(公告)日：2019-05-21
申请号：US15303873
申请日：2015-05-11
IPC分类号： G03F7/11 , G03F7/16 , G03F7/20 , G03F7/26 , G03F7/40 , C08F220/14 , C08F220/58 , C09D133/26 , H01L21/027 , H01L21/033 , H01L21/308
摘要： A resist underlayer film-forming composition for lithography capable of being dry-etched during pattern transfer from the upper layer or during substrate processing and capable of being removed with an alkaline aqueous solution after the substrate processing. A resist underlayer film-forming composition for lithography includes a polymer (A) including a unit structure of Formula (1) and a unit structure of Formula (2); a crosslinkable compound (B) having at least two groups selected from blocked isocyanate groups, methylol group, or C1-5 alkoxy methyl groups; and a solvent (C), characterized in that the polymer (A) is a polymer in which the unit structure of Formula (1) and the unit structure of Formula (2) are copolymerized in a mol % ratio of the unit structure of Formula (1):the unit structure of Formula (2)=25 to 60:75 to 40.
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公开(公告)号：US10113083B2
公开(公告)日：2018-10-30
申请号：US14910787
申请日：2014-08-01
IPC分类号： C09D167/06 , C08G59/42 , G03F7/09 , C09D5/00 , H01L21/027
摘要： The present invention provides a resist underlayer film that has a wide focus position range within which a good resist shape can be obtained. A resist underlayer film-forming composition for lithography comprising a linear polymer that is obtained by a reaction of a diepoxy group-containing compound (A) with a dicarboxyl group-containing compound (B). The linear polymer has structures of the following formulae (1), (2), and (3) derived from the diepoxy group-containing compound (A) or the dicarboxyl group-containing compound (B): The linear polymer preferably contains a polymer obtained by a reaction of two diepoxy group-containing compounds (A) each having structures of Formulae (1) and (2) with a dicarboxyl group-containing compound (B) having a structure of Formula (3), or a polymer obtained by a reaction of a diepoxy group-containing compound (A) having a structure of Formula (1) with two dicarboxyl group-containing compounds (B) each having structures of Formulae (2) and (3).
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公开(公告)号：US10242871B2
公开(公告)日：2019-03-26
申请号：US15519696
申请日：2015-10-16
IPC分类号： H01L29/08 , H01L21/033 , C08G59/22 , C08F20/34 , C08F20/58 , C09D133/14 , G03F7/004 , G03F7/20 , H01L21/027 , G03F7/09
摘要： There is provided a composition that a resist pattern having a reduced LWR representing variations in line width of the resist pattern, compared to conventional resist patterns, can be formed. A resist underlayer film-forming composition for lithography comprising a polymer, 0.1 to 30 parts by mass of a compound having an amino group protected with a tert-butoxycarbonyl group and an unprotected carboxyl group, or a hydrate of the compound, relative to 100 parts by mass of the polymer, and a solvent.
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9.发明授权Resist underlayer film formation composition and method for forming resist pattern using the same 有权抗蚀剂下层膜形成组合物和使用其形成抗蚀剂图案的方法公开(公告)号：US09448480B2
公开(公告)日：2016-09-20
申请号：US15023823
申请日：2014-09-22
IPC分类号： G03F7/11 , C08G59/42 , G03F7/20 , G03F7/16 , G03F7/32 , C09D167/00 , H01L21/027
CPC分类号： G03F7/11 , C08G59/245 , C08G59/26 , C08G59/308 , C08G59/42 , C09D167/00 , G03F7/091 , G03F7/094 , G03F7/168 , G03F7/2004 , G03F7/2053 , G03F7/2059 , G03F7/32 , H01L21/0276
摘要： The present invention provides a novel resist underlayer film formation composition for lithography. A resist underlayer film formation composition for lithography comprising: a polymer having a structure of Formula (1) at a terminal of a polymer chain; a cross-linking agent; a compound promoting a cross-linking reaction; and an organic solvent; (where R1, R2, and R3 are each independently a hydrogen atom, a linear or branched C1-13 alkyl group, a halogeno group, or a hydroxy group; at least one of R1, R2, and R3 is the alkyl group; Ar is a benzene ring, a naphthalene ring, or an anthracene ring; two carbonyl groups are bonded to respective two adjacent carbon atoms of Ar; and X is a linear or branched C1-6 alkyl group optionally having a C1-3 alkoxy group as a substituent).
摘要翻译： 用于光刻的新型抗蚀剂下层膜形成组合物包括：在聚合物链的末端具有式（1）结构的聚合物; 交联剂; 促进交联反应的化合物; 和有机溶剂（其中R 1，R 2和R 3各自独立地为氢原子，直链或支链C 1-13烷基，卤代基或羟基; R 1，R 2和R 3中的至少一个为 烷基; Ar是苯环，萘环或蒽环;两个羰基与Ar的两个相邻碳原子键合; X是任选具有C1- 3烷氧基作为取代基）。
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公开(公告)号：US20150008372A1
公开(公告)日：2015-01-08
申请号：US14362851
申请日：2012-11-12
发明人： Tokio Nishita , Ryuta Mizuochi , Rikimaru Sakamoto , Tomohisa Yamada , Naoki Nakaie , Yuki Takayama
IPC分类号： C07C211/54 , H01B1/12
CPC分类号： C07C211/54 , C08G73/0266 , C08L79/02 , C09D179/02 , G03F1/00 , G03F7/093 , G03F7/11 , H01B1/128
摘要： A composition for forming an antistatic film, includes: an oligomer compound of Formula (1A): (where R1 is a hydrogen atom or a group of Formula (2), each of R2 and R3 is independently a hydrogen atom, a group of Formula (3), or a group of Formula (4), at least one of the plurality of Rs is a sulfo group, a and b are positive integers satisfying 2≦(a+b)≦6; and each of a plurality of xs is independently an integer from 0 to 4): (where n is an integer satisfying 1≦n
摘要翻译： 用于形成抗静电膜的组合物包括：式（1A）的低聚物化合物：其中R 1是氢原子或式（2）的基团，R 2和R 3各自独立地是氢原子，式 （3）或式（4）的基团，所述多个R s中的至少一个是磺基，a和b是满足2＆lt; nlE的正整数;（a + b）＆nlE; 6; xs独立地为0至4的整数）：（其中n是满足1＆nlE的整数; n <（a + b + 4）; a，b，多个Rs和x与式 ）;并且多个y中的每一个独立地为0至5的整数）; 和水。
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